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IPP70N10S3L-12 [INFINEON]

OptiMOS-T Power-Transistor; 的OptiMOS -T电源晶体管
IPP70N10S3L-12
型号： IPP70N10S3L-12
厂家： Infineon    Infineon
描述：

OptiMOS-T Power-Transistor
的OptiMOS -T电源晶体管

晶体 晶体管
文件： 总9页 (文件大小：188K)
中文：  中文翻译
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IPB70N10S3L-12  
IPI70N10S3L-12, IPP70N10S3L-12  
OptiMOS®-T Power-Transistor  
Product Summary  
VDS  
100  
12  
V
R
DS(on),max (SMD version)  
mΩ  
A
I D  
70  
Features  
• N-channel - Enhancement mode  
PG-TO263-3-2  
PG-TO262-3-1  
PG-TO220-3-1  
• Automotive AEC Q101 qualified  
• MSL1 up to 260°C peak reflow  
• 175°C operating temperature  
• Green product (RoHS compliant)  
• 100% Avalanche tested  
Type  
Package  
Marking  
IPB70N10S3L-12  
IPI70N10S3L-12  
IPP70N10S3L-12  
PG-TO263-3-2  
PG-TO262-3-1  
PG-TO220-3-1  
3N10L12  
3N10L12  
3N10L12  
Maximum ratings, at T j=25 °C, unless otherwise specified  
Value  
Parameter  
Symbol  
Conditions  
Unit  
I D  
T C=25 °C, VGS=10 V  
T C=100 °C,  
Continuous drain current  
70  
48  
A
V
GS=10 V1)  
Pulsed drain current1)  
Avalanche energy, single pulse1)  
I D,pulse  
EAS  
T C=25 °C  
I D=35A  
280  
410  
70  
mJ  
A
I AS  
Avalanche current, single pulse  
Gate source voltage2)  
VGS  
±20  
125  
V
Ptot  
T C=25 °C  
Power dissipation  
W
T j, T stg  
Operating and storage temperature  
IEC climatic category; DIN IEC 68-1  
-55 ... +175  
55/175/56  
°C  
Rev. 1.0  
page 1  
2008-04-21  
IPB70N10S3L-12  
IPI70N10S3L-12, IPP70N10S3L-12  
Values  
typ.  
Parameter  
Symbol  
Conditions  
Unit  
min.  
max.  
Thermal characteristics1)  
R thJC  
R thJA  
R thJA  
Thermal resistance, junction - case  
-
-
-
-
1.5  
62  
K/W  
Thermal resistance, junction -  
ambient, leaded  
SMD version, device on PCB  
minimal footprint  
-
-
-
-
62  
40  
6 cm2 cooling area3)  
Electrical characteristics, at T j=25 °C, unless otherwise specified  
Static characteristics  
V(BR)DSS  
VGS(th)  
V
V
GS=0 V, I D= 1 mA  
DS=VGS, I D=83µA  
Drain-source breakdown voltage  
Gate threshold voltage  
100  
1.2  
-
-
V
1.7  
2.4  
V
DS=80 V, VGS=0 V,  
I DSS  
Zero gate voltage drain current  
-
-
0.01  
1
1
µA  
T j=25 °C  
V
DS=80 V, VGS=0 V,  
100  
T j=125 °C2)  
I GSS  
V
V
GS=20V, VDS=0V  
GS=4.5V, I D=70A  
Gate-source leakage current  
-
-
-
100 nA  
R DS(on)  
Drain-source on-state resistance  
12.2  
15.8  
15.5  
12.1  
11.8  
mΩ  
V
GS=4.5V, I D=70A,  
-
-
-
11.9  
10.1  
9.8  
SMD version  
V
GS=10 V, I D=70 A  
V
GS=10 V, I D=70 A,  
SMD version  
Rev. 1.0  
page 2  
2008-04-21  
IPB70N10S3L-12  
IPI70N10S3L-12, IPP70N10S3L-12  
Values  
typ.  
Parameter  
Symbol  
Conditions  
Unit  
min.  
max.  
Dynamic characteristics1)  
Input capacitance  
Output capacitance  
Reverse transfer capacitance  
Turn-on delay time  
Rise time  
C iss  
C oss  
Crss  
t d(on)  
t r  
-
-
-
-
-
-
-
4270  
950  
90  
10  
5
5550 pF  
1230  
V
GS=0V, VDS=25V,  
f =1MHz  
135  
-
-
-
-
ns  
V
DD=20 V, VGS=10 V,  
I D=50 A, R G=3.5 Ω  
t d(off)  
t f  
Turn-off delay time  
Fall time  
28  
5
Gate Charge Characteristics1)  
Gate to source charge  
Gate to drain charge  
Gate charge total  
Q gs  
-
-
-
-
16  
11  
60  
3.7  
21  
17  
80  
-
nC  
Q gd  
V
V
DD=80 V, I D=70 A,  
GS=0 to 10 V  
Q g  
Vplateau  
Gate plateau voltage  
V
A
Reverse Diode  
Diode continous forward current1)  
Diode pulse current1)  
I S  
-
-
-
-
70  
T C=25°C  
I S,pulse  
280  
V
GS=0 V, I F=70 A,  
VSD  
Diode forward voltage  
Reverse recovery time1)  
Reverse recovery charge1)  
0.6  
1
1.2  
V
T j=25 °C  
VR=50V, I F=I S,  
diF/dt =100A/µs  
t rr  
-
-
80  
-
-
ns  
nC  
Q rr  
185  
1) Defined by design. Not subject to production test.  
2) Qualified with VGS = +20/-5V  
3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain  
connection. PCB is vertical in still air.  
Rev. 1.0  
page 3  
2008-04-21  
IPB70N10S3L-12  
IPI70N10S3L-12, IPP70N10S3L-12  
1 Power dissipation  
2 Drain current  
P
tot = f(T C); VGS ≥ 6 V  
I D = f(T C); VGS ≥ 6 V; SMD  
140  
120  
100  
80  
80  
70  
60  
50  
40  
30  
20  
10  
0
60  
40  
20  
0
0
50  
100  
150  
200  
0
50  
100  
150  
200  
T
C [°C]  
T
C [°C]  
3 Safe operating area  
4 Max. transient thermal impedance  
thJC = f(t p)  
I D = f(VDS); T C = 25 °C; D = 0; SMD  
parameter: t p  
Z
parameter: D =t p/T  
101  
1000  
100  
10  
1 µs  
100  
0.5  
10 µs  
100 µs  
0.1  
1 ms  
10-1  
0.05  
0.01  
10-2  
single pulse  
10-3  
1
10-6  
10-5  
10-4  
10-3  
10-2  
10-1  
100  
0.1  
1
10  
100  
t p [s]  
V
DS [V]  
Rev. 1.0  
page 4  
2008-04-21  
IPB70N10S3L-12  
IPI70N10S3L-12, IPP70N10S3L-12  
5 Typ. output characteristics  
I D = f(VDS); T j = 25 °C; SMD  
parameter: VGS  
6 Typ. drain-source on-state resistance  
DS(on) = f(I D); T j = 25 °C; SMD  
R
parameter: VGS  
280  
32  
10 V  
5 V  
260  
240  
220  
200  
180  
160  
140  
120  
100  
80  
4 V  
3.5 V  
3 V  
4.5 V  
24  
4 V  
16  
8
4.5 V  
5 V  
10 V  
60  
3.5 V  
3 V  
40  
20  
0
0
1
2
3
4
5
0
20  
40  
60  
80  
100 120 140  
V
DS [V]  
I
D [A]  
7 Typ. transfer characteristics  
I D = f(VGS); VDS = 6V  
parameter: T j  
8 Typ. drain-source on-state resistance  
R
DS(on) = f(T j); I D = 50 A; VGS = 10 V; SMD  
150  
100  
50  
25  
-55 °C  
25 °C  
175 °C  
20  
15  
10  
5
0
1
2
3
4
5
-60  
-20  
20  
60  
T j [°C]  
100  
140  
180  
V
GS [V]  
Rev. 1.0  
page 5  
2008-04-21  
IPB70N10S3L-12  
IPI70N10S3L-12, IPP70N10S3L-12  
9 Typ. gate threshold voltage  
GS(th) = f(T j); VGS = VDS  
10 Typ. capacitances  
V
C = f(VDS); VGS = 0 V; f = 1 MHz  
parameter: I D  
2.5  
104  
Ciss  
2
1.5  
1
400 µA  
Coss  
103  
80 µA  
Crss  
102  
0.5  
101  
0
0
5
10  
15  
20  
25  
30  
-60  
-20  
20  
60  
T j [°C]  
100  
140  
180  
V
DS [V]  
11 Typical forward diode characteristicis  
12 Typ. avalanche characteristics  
A S= f(t AV  
IF = f(VSD)  
I
)
parameter: T j  
parameter: Tj(start)  
103  
102  
101  
100  
25 °C  
100 °C  
150 °C  
10  
25 °C  
175 °C  
100  
1
0
0.2  
0.4  
0.6  
0.8  
1
1.2  
1.4  
0.1  
1
10  
AV [µs]  
100  
1000  
V
SD [V]  
t
Rev. 1.0  
page 6  
2008-04-21  
IPB70N10S3L-12  
IPI70N10S3L-12, IPP70N10S3L-12  
13 Typical avalanche energy  
AS = f(T j)  
14 Typ. drain-source breakdown voltage  
BR(DSS) = f(T j); I D = 1 mA  
E
V
parameter: I D  
115  
110  
105  
100  
95  
900  
800  
700  
600  
500  
400  
300  
200  
100  
17.5 A  
35 A  
70 A  
90  
0
-55  
-15  
25  
65  
105  
145  
25  
75  
125  
175  
T j [°C]  
T j [°C]  
15 Typ. gate charge  
GS = f(Q gate); I D = 70 A pulsed  
16 Gate charge waveforms  
V
parameter: VDD  
10  
9
8
7
6
5
4
3
2
1
0
V GS  
Q g  
80 V  
20 V  
V gs(th)  
Q g(th)  
Q sw  
Q gd  
Q gate  
Q gs  
0
10  
20  
30  
gate [nC]  
40  
50  
60  
Q
Rev. 1.0  
page 7  
2008-04-21  
IPB70N10S3L-12  
IPI70N10S3L-12, IPP70N10S3L-12  
Published by  
Infineon Technologies AG  
81726 Munich, Germany  
© Infineon Technologies AG 2008  
All Rights Reserved.  
Legal Disclaimer  
The information given in this document shall in no event be regarded as a guarantee of conditions  
or characteristics. With respect to any examples or hints given herein,  
any typical values stated herein and/or any information regarding the application of the device,  
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including  
without limitation warranties of non‑infringement of intellectual property rights of any third party.  
Information  
For further information on technology, delivery terms and conditions and prices please  
contact your nearest Infineon Technologies Office (www.infineon.com).  
Warnings  
Due to technical requirements components may contain dangerous substances. For information  
on the types in question please contact your nearest Infineon Technologies Office.  
Infineon Technologies Components may only be used in life-support devices or systems with the  
express written approval of Infineon Technologies, if a failure of such components can reasonably  
be expected to cause the failure of that life-support device or system, or to affect the safety or  
effectiveness of that device or system. Life support devices or systems are intended to be  
implanted in the human body, or to support and/or maintain and sustain and/or protect human life.  
If they fail, it is reasonable to assume that the health of the user or other persons may be  
endangered.  
Rev. 1.0  
page 8  
2008-04-21  
IPB70N10S3L-12  
IPI70N10S3L-12, IPP70N10S3L-12  
Revision History  
Version  
Date  
Changes  
Rev. 1.0  
page 9  
2008-04-21  

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