IRF6617TR1PBF [INFINEON]
Power Field-Effect Transistor, 14A I(D), 30V, 0.0081ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, ROHS COMPLIANT, ISOMETRIC-3;
| 型号： | IRF6617TR1PBF |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor, 14A I(D), 30V, 0.0081ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, ROHS COMPLIANT, ISOMETRIC-3 开关 脉冲 晶体管 |
| 文件： | 总9页 (文件大小：215K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD -95847B
IRF6617
DirectFET Power MOSFET
l Application Specific MOSFETs
l Ideal for CPU Core DC-DC Converters
l Low Conduction Losses
VDSS
30V
RDS(on) max
Qg(typ.)
8.1m
Ω@VGS = 10V
11nC
l Low Switching Losses
10.3mΩ@VGS = 4.5V
l Low Profile (<0.7 mm)
l Dual Sided Cooling Compatible
l Compatible with Existing Surface Mount Techniques
DirectFET ISOMETRIC
ST
Applicable DirectFET Outline and Substrate Outline (see p.7, 8 for details)
SQ
SX
ST
MQ
MX
MT
Description
The IRF6617 combines the latest HEXFET® power MOSFET silicon technology with advanced DirectFETTM packaging to
achieve the lowest on-state resistance in a package that has the footprint of a Micro8™ and only 0.7 mm profile. The DirectFET
package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase,
infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing meth-
ods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improv-
ing previous best thermal resistance by 80%.
The IRF6617 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction
and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the
latest generation of processors operating at higher frequencies. The IRF6617 has been optimized for parameters that are
critical in synchronous buck converters including RDS(on) and gate charge to minimize losses in the control FET socket.
Absolute Maximum Ratings
Max.
Parameter
Units
VDS
30
Drain-to-Source Voltage
V
±20
V
Gate-to-Source Voltage
GS
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
55
I
I
I
I
@ TC = 25°C
D
D
D
14
@ TA = 25°C
@ TA = 70°C
A
11
120
DM
42
P
P
P
@TC = 25°C
@TA = 25°C
@TA = 70°C
Power Dissipation
D
D
D
2.1
1.4
Power Dissipation
W
Power Dissipation
EAS
IAR
27
Single Pulse Avalanche Energy
Avalanche Current
mJ
A
12
0.017
-40 to + 150
Linear Derating Factor
W/°C
°C
T
T
Operating Junction and
J
Storage Temperature Range
STG
Thermal Resistance
Parameter
Typ.
–––
12.5
20
Max.
58
Units
RθJA
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Case
RθJA
–––
–––
3.0
RθJA
°C/W
RθJC
–––
1.0
RθJ-PCB
Junction-to-PCB Mounted
–––
Notes through are on page 2
www.irf.com
1
11/3/05
IRF6617
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
VGS = 0V, ID = 250µA
BVDSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
30
–––
–––
–––
1.35
–––
–––
–––
–––
–––
39
–––
–––
V
∆ΒVDSS/∆TJ
RDS(on)
25
––– mV/°C Reference to 25°C, ID = 1mA
mΩ
6.2
7.9
–––
-5.4
–––
–––
–––
–––
–––
11
8.1
V
GS = 10V, ID = 15A e
VGS = 4.5V, ID = 12A e
DS = VGS, ID = 250µA
10.3
2.35
VGS(th)
Gate Threshold Voltage
V
V
∆VGS(th)/∆TJ
IDSS
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
––– mV/°C
1.0
150
100
-100
–––
17
µA VDS = 24V, VGS = 0V
V
V
V
DS = 24V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
nA
S
GS = 20V
GS = -20V
gfs
VDS = 15V, ID = 12A
Qg
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Qgs1
Qgs2
Qgd
Qgodr
Qsw
Qoss
td(on)
tr
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Output Charge
3.1
1.0
4.0
2.9
5.0
10
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
VDS = 15V
nC
VGS = 4.5V
ID = 12A
See Fig. 16
nC VDS = 15V, VGS = 0V
DD = 16V, VGS = 4.5Vꢁe
Turn-On Delay Time
11
V
Rise Time
34
ID = 12A
td(off)
tf
Turn-Off Delay Time
12
ns Clamped Inductive Load
Fall Time
3.7
Ciss
Coss
Crss
Input Capacitance
––– 1300 –––
VGS = 0V
Output Capacitance
–––
–––
430
160
–––
–––
pF
VDS = 15V
Reverse Transfer Capacitance
ƒ = 1.0MHz
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
IS
D
S
Continuous Source Current
–––
–––
53
MOSFET symbol
(Body Diode)
A
showing the
G
ISM
Pulsed Source Current
–––
–––
120
integral reverse
(Body Diode)ꢁc
p-n junction diode.
VSD
trr
Diode Forward Voltage
–––
–––
–––
0.81
16
1.0
24
11
V
TJ = 25°C, IS = 12A, VGS = 0V e
Reverse Recovery Time
Reverse Recovery Charge
ns TJ = 25°C, IF = 12A
di/dt = 100A/µs e
nC
Qrr
7.2
Notes:
ꢀ Used double sided cooling, mounting pad.
Mounted on minimum footprint full size board with metalized
back and with small clip heatsink.
Repetitive rating; pulse width limited by
max. junction temperature.
Starting TJ = 25°C, L = 0.40mH,
RG = 25Ω, IAS = 12A.
TC measured with thermal couple mounted to top (Drain) of part.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
Surface mounted on 1 in. square Cu board.
R is measured at TJ of approximately 90°C.
θ
2
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IRF6617
1000
100
10
1000
100
10
VGS
10V
VGS
10V
TOP
TOP
5.0V
4.5V
4.0V
3.5V
3.0V
2.8V
2.5V
5.0V
4.5V
4.0V
3.5V
3.0V
2.8V
2.5V
BOTTOM
BOTTOM
1
2.5V
1
≤
60µs PULSE WIDTH
Tj = 150°C
≤
60µs PULSE WIDTH
Tj = 25°C
2.5V
1
1
0.1
0.1
10
100
0.1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.0
1.5
1.0
0.5
1000.0
I
= 15A
D
V
= 10V
GS
100.0
10.0
1.0
T
= 150°C
J
T
= 25°C
J
V
= 15V
DS
≤
60µs PULSE WIDTH
0.1
1.0
2.0
3.0
4.0
5.0
6.0
-60 -40 -20
T
0
20 40 60 80 100 120 140 160
V
, Gate-to-Source Voltage (V)
GS
, Junction Temperature (°C)
J
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance vs. Temperature
10000
12
V
= 0V,
= C
f = 1 MHZ
GS
I
= 12A
D
V
= 24V
C
C
C
+ C , C
SHORTED
DS
VDS= 15V
iss
gs
gd
ds
= C
10
8
rss
oss
gd
= C + C
ds
gd
Ciss
6
1000
Coss
4
2
Crss
0
100
0
5
10
15
20
25
30
1
10
, Drain-to-Source Voltage (V)
100
Q
Total Gate Charge (nC)
G
V
DS
Fig 5. Typical Capacitance vs.Drain-to-Source Voltage
Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage
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3
IRF6617
1000
100
10
1000.0
OPERATION IN THIS AREA
LIMITED BY R (on)
DS
100.0
T
J
= 150°C
10.0
1.0
100µsec
1msec
1
T
= 25°C
V
J
10msec
Tc = 25°C
Tj = 150°C
Single Pulse
= 0V
GS
0.1
0.1
0
1
10
100
1000
0.2
0.4
0.6
0.8
1.0
1.2
V
, Drain-toSource Voltage (V)
V
, Source-to-Drain Voltage (V)
DS
SD
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
60
2.5
2.0
1.5
1.0
50
40
30
20
10
0
I
= 250µA
D
25
50
75
100
125
150
-75 -50 -25
0
25
50
75 100 125 150
T
J
, Junction Temperature (°C)
T
, Temperature ( °C )
J
Fig 10. Threshold Voltage vs. Temperature
Fig 9. Maximum Drain Current vs. Case Temperature
100
D = 0.50
0.20
10
1
0.10
0.05
0.02
R1
R1
R2
R2
R3
R3
R4
R4
R5
R5
Ri (°C/W) τi (sec)
0.01
τ
τ
τA
τ
J τJ
τ
0.6676
1.0462
1.5611
29.282
25.455
0.000066
0.000896
0.004386
0.68618
32
τ
1τ1
τ
τ
τ
2 τ2
3τ3
4τ4
5τ5
0.1
Ci= τi/Ri
Ci= τi/Ri
0.01
0.001
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
100
t
, Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
4
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IRF6617
120
100
80
60
40
20
0
24
20
16
12
8
I
D
I
= 15A
D
TOP
5.2A
7.9A
12A
BOTTOM
T
= 125°C
J
T
= 25°C
J
4
2.0
4.0
6.0
8.0
10.0
25
50
75
100
125
150
V
, Gate-to-Source Voltage (V)
Starting T , Junction Temperature (°C)
J
GS
Fig 12. On-Resistance Vs. Gate Voltage
Fig 13. Maximum Avalanche Energy Vs. Drain Current
V
(BR)DSS
15V
t
p
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
DD
-
I
A
V
2
GS
0.01Ω
t
p
I
AS
Fig 14b. Unclamped Inductive Waveforms
Fig 14a. Unclamped Inductive Test Circuit
LD
VDS
VDS
90%
+
-
VDD
10%
VGS
D.U.T
VGS
Pulse Width < 1µs
Duty Factor < 0.1%
td(on)
td(off)
tr
tf
Fig 15b. Switching Time Waveforms
Fig 15a. Switching Time Test Circuit
Current Regulator
Same Type as D.U.T.
Id
Vds
50KΩ
Vgs
.2µF
12V
.3µF
+
V
DS
D.U.T.
-
V
GS
Vgs(th)
3mA
I
I
D
G
Current Sampling Resistors
Qgs1
Qgs2
Qgd
Qgodr
Fig 16a. Gate Charge Test Circuit
Fig 16b. Gate Charge Waveform
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5
IRF6617
Driver Gate Drive
P.W.
P.W.
Period
Period
D =
D.U.T
+
*
=10V
V
GS
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
D.U.T. I Waveform
SD
+
-
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
-
+
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
VDD
Re-Applied
Voltage
• di/dt controlled by RG
RG
+
-
Body Diode
Inductor Current
Forward Drop
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
I
SD
Ripple
≤ 5%
* VGS = 5V for Logic Level Devices
Fig 17. Diode Reverse Recovery Test Circuit for N-Channel
HEXFET® Power MOSFETs
DirectFET Substrate and PCB Layout, ST Outline
(Small Size Can, T-Designation).
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET.
This includes all recommendations for stencil and substrate designs.
G = GATE
D = DRAIN
S = SOURCE
D
D
D
D
S
S
G
6
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IRF6617
DirectFET Outline Dimension, ST Outline
(Small Size Can, T-Designation).
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET.
This includes all recommendations for stencil and substrate designs.
DIMENSIONS
IMPERIAL
METRIC
MAX
CODE
MIN
MIN
4.75
3.70
2.75
0.35
0.58
0.58
0.75
0.53
0.26
0.88
2.18
0.59
0.03
0.08
MAX
0.191
0.156
0.112
0.018
0.024
0.024
0.031
0.022
0.012
0.039
0.090
0.028
0.003
0.007
4.85
3.95
2.85
0.45
0.62
0.62
0.79
0.57
0.30
0.98
2.28
0.70
0.08
0.17
0.187
0.146
0.108
0.014
0.023
0.023
0.030
0.021
0.010
0.035
0.086
0.023
0.001
0.003
A
B
C
D
E
F
G
H
J
K
L
M
N
P
DirectFET Part Marking
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7
IRF6617
DirectFET Tape & Reel Dimension (Showing component orientation).
NOTE: Controlling dimensions in mm
Std reel quantity is 4800 parts. (ordered as IRF6617). For 1000 parts on 7" reel,
order IRF6617TR1
REEL DIMENSIONS
STANDARD OPTION (QTY 4800)
TR1 OPTION (QTY 1000)
METRIC
MAX
IMPERIAL
METRIC
MIN
MAX
IMPERIAL
CODE
MIN
MAX
N.C
MIN
6.9
MAX
N.C
N.C
0.50
N.C
N.C
0.53
N.C
N.C
MIN
A
B
C
D
E
F
12.992
0.795
0.504
0.059
3.937
N.C
330.0
20.2
12.8
1.5
N.C
N.C
13.2
N.C
N.C
18.4
14.4
15.4
177.77 N.C
0.75
0.53
0.059
2.31
N.C
N.C
19.06
13.5
1.5
N.C
0.520
N.C
12.8
N.C
100.0
N.C
58.72
N.C
N.C
N.C
0.724
0.567
0.606
13.50
12.01
12.01
G
H
0.488
0.469
0.47
0.47
12.4
11.9
11.9
11.9
Loaded Tape Feed Direction
NOTE: CONTROLLING
DIMENSIONS IN MM
DIMENSIONS
METRIC
IMPERIAL
CODE
MIN
7.90
3.90
11.90
5.45
4.00
5.00
1.50
1.50
MIN
0.311
MAX
0.319
0.161
0.484
0.219
0.165
0.205
N.C
MAX
A
B
C
D
E
F
8.10
4.10
12.30
5.55
4.20
5.20
N.C
0.154
0.469
0.215
0.157
0.197
0.059
0.059
G
H
1.60
0.063
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.11/05
8
www.irf.com
Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/
相关型号：
IRF6617TRPBF
Power Field-Effect Transistor, 14A I(D), 30V, 0.0081ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, ROHS COMPLIANT, ISOMETRIC-3
INFINEON
IRF6620PBF
Power Field-Effect Transistor, 27A I(D), 20V, 0.0027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, ISOMETRIC-3
INFINEON
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