IRF7313QPBF [INFINEON]
HEXFET Power MOSFET; HEXFET功率MOSFET
| 型号： | IRF7313QPBF |
| 厂家： | 
Infineon |
| 描述： | HEXFET Power MOSFET |
| 文件： | 总7页 (文件大小：238K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 96125
IRF7313QPbF
HEXFET® Power MOSFET
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Advanced Process Technology
UltraLowOn-Resistance
DualN-ChannelMOSFET
SurfaceMount
Available in Tape & Reel
150°COperatingTemperature
Automotive [Q101] Qualified
Lead-Free
1
2
8
S1
G1
D1
VDSS = 30V
7
D1
3
4
6
S2
D2
5
G2
D2
RDS(on) = 0.029Ω
Top View
Description
Specifically designed for Automotive applications, these
HEXFET® Power MOSFET's in a Dual SO-8 package utilize
the lastest processing techniques to achieve extremely low
on-resistance per silicon area. Additional features of these
Automotive qualified HEXFET Power MOSFET's are a
150°C junction operating temperature, fast switching
speed and improved repetitive avalanche rating. These
benefits combine to make this design an extremely efficient
and reliable device for use in Automotive applications and
a wide variety of other applications.
The efficient SO-8 package provides enhanced thermal
characteristics and dual MOSFET die capability making it
ideal in a variety of power applications. This dual, surface
mount SO-8 can dramatically reduce board space and is
also available in Tape & Reel.
SO-8
Absolute Maximum Ratings ( TA = 25°C Unless Otherwise Noted)
Symbol
VDS
VGS
Maximum
Units
Drain-Source Voltage
Gate-Source Voltage
30
± 20
6.5
V
TA = 25°C
TA = 70°C
Continuous Drain Currentꢀ
ID
5.2
A
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
IDM
IS
30
2.5
TA = 25°C
TA = 70°C
2.0
1.3
Maximum Power Dissipation ꢀ
PD
W
Single Pulse Avalanche Energy
Avalanche Current
EAS
IAR
82
mJ
A
4.0
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
EAR
0.20
5.8
mJ
V/ ns
°C
dv/dt
TJ,TSTG
-55 to + 150
Thermal Resistance Ratings
Parameter
Symbol
Limit
Units
Maximum Junction-to-Ambientꢀ
RθJA
62.5
°C/W
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09/04/07
IRF7313QPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
30
V
VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
0.022 V/°C Reference to 25°C, ID = 1mA
0.023 0.029
0.032 0.046
1.0
14
1.0
25
100
-100
VGS = 10V, ID = 5.8A
GS = 4.5V, ID = 4.7A
RDS(on)
Static Drain-to-Source On-Resistance
Ω
V
VGS(th)
gfs
Gate Threshold Voltage
V
S
VDS = VGS, ID = 250µA
VDS = 15V, ID = 5.8A
Forward Transconductance
V
DS = 24V, VGS = 0V
IDSS
IGSS
Drain-to-Source Leakage Current
µA
nA
VDS = 24V, VGS = 0V, TJ = 55°C
VGS = 20V
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
VGS = -20V
Qg
22
33
ID = 5.8A
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
2.6 3.9
6.4 9.6
nC VDS = 15V
VGS = 10V, See Fig. 10
8.1
8.9
26
17
12
13
39
26
VDD = 15V
ID = 1.0A
ns
pF
td(off)
tf
Turn-Off Delay Time
Fall Time
RG = 6.0Ω
RD = 15Ω
VGS = 0V
Ciss
Coss
Crss
Input Capacitance
650
320
130
Output Capacitance
VDS = 25V
Reverse Transfer Capacitance
= 1.0MHz, See Fig. 9
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
MOSFET symbol
showing the
D
S
IS
2.5
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
30
p-n junction diode.
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
0.78 1.0
V
TJ = 25°C, IS = 1.7A, VGS = 0V
TJ = 25°C, IF = 1.7A
45
58
68
87
ns
nC
Qrr
di/dt = 100A/µs
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Starting TJ = 25°C, L = 10mH
RG = 25Ω, IAS = 4.0A.
ISD ≤ 4.0A, di/dt ≤ 74A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C
Pulse width ≤ 300µs; duty cycle ≤ 2%.
ꢀ Surface mounted on FR-4 board, t ≤ 10sec.
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IRF7313QPbF
100
10
1
100
10
1
VGS
15V
VGS
TOP
TOP
15V
10V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 3.0V
BOTTOM 3.0V
3.0V
3.0V
20µs PULSE WIDTH
20µs PULSE WIDTH
T
J
= 25°C
T
J
= 150°C
A
A
0.1
1
10
0.1
1
10
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
10
1
100
TJ = 25°C
TJ = 150°C
T = 150°C
J
10
T = 25°C
J
VDS = 10V
20µs PULSE WIDTH
V
= 0V
GS
A
1
5.0A
3.0
3.5
4.0
4.5
0.4
0.6
0.8
1.0
1.2
1.4
1.6
VGS , Gate-to-Source Voltage (V)
V
, Source-to-Drain Voltage (V)
SD
Fig 4. Typical Source-Drain Diode
Fig 3. Typical Transfer Characteristics
Forward Voltage
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IRF7313QPbF
2.0
0.040
0.036
0.032
0.028
0.024
0.020
5.8A
=
I
D
V
= 4.5V
GS
1.5
1.0
0.5
0.0
V
= 10V
GS
V
= 10V
GS
A
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
0
10
20
30
40
T , Junction Temperature ( C)
J
I
, Drain Current (A)
D
Fig 5. Normalized On-Resistance
Fig 6. Typical On-Resistance Vs. Drain
Vs. Temperature
Current
200
0.12
I
D
TOP
1.8A
3.2A
BOTTOM 4.0A
0.10
0.08
0.06
0.04
0.02
0.00
160
120
80
40
0
I
= 5.8A
D
A
A
0
3
6
9
12
15
25
50
75
100
125
150
Starting T , Junction Temperature (°C)
J
V
, Gate-to-Source Voltage (V)
GS
Fig 7. Typical On-Resistance Vs. Gate
Fig 8. Maximum Avalanche Energy
Voltage
Vs. Drain Current
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IRF7313QPbF
1200
900
600
300
0
20
16
12
8
V
C
C
C
= 0V,
f = 1MHz
GS
iss
rss
oss
I = 5.8A
D
= C + C
,
C
SHORTED
gs
gd
gd
ds
V
= 15V
DS
= C
= C + C
ds
gd
C
iss
C
oss
C
rss
4
0
A
0
10
20
30
40
1
10
100
Q , Total Gate Charge (nC)
V
, Drain-to-Source Voltage (V)
G
DS
Fig 9. Typical Capacitance Vs.
Fig 10. Typical Gate Charge Vs.
Drain-to-Source Voltage
Gate-to-Source Voltage
100
10
1
0.50
0.20
0.10
0.05
0.02
0.01
P
2
DM
t
1
t
2
Notes:
1. Duty factor D = t / t
SINGLE PULSE
1
(THERMAL RESPONSE)
2. Peak T =P
J
x Z
+ T
thJA A
DM
0.1
0.00001
0.0001
0.001
0.01
0.1
1
10
100
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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IRF7313QPbF
SO-8 Package Outline
Dimensions are shown in millimeters (inches)
SO-8 Part Marking
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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IRF7313QPbF
SO-8 Tape and Reel
Dimensions are shown in millimeters (inches)
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
Data and specifications subject to change without notice.
This product has been designed and qualified for the Automotive [Q101] market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.09/2007
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