IRF7403TRPBF [INFINEON]
Generation V Technology; 第五代技术
| 型号： | IRF7403TRPBF |
| 厂家： | 
Infineon |
| 描述： | Generation V Technology |
| 文件： | 总9页 (文件大小：119K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 9.1245B
IRF7403
PRELIMINARY
HEXFET® Power MOSFET
l Generation V Technology
l Ultra Low On-Resistance
l N-Channel Mosfet
A
A
1
8
S
D
VDSS = 30V
2
7
S
D
l Surface Mount
3
6
5
l Available in Tape & Reel
l Dynamic dv/dt Rating
l Fast Switching
S
D
D
4
G
R
DS(on) = 0.022Ω
Top View
Description
Fifth GenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessing
techniques to achieve the lowest possible on-resistance per silicon area. This
benefit, combinedwiththefastswitchingspeedandruggedizeddevicedesignthat
HEXFET Power MOSFETs are well known for, provides the designer with an
extremely efficient device for use in a wide variety of applications.
The SO-8 has been modified through a customized leadframe for enhanced
thermal characteristics and multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple devices can be used in
an application with dramatically reduced board space. The package is designed
for vapor phase, infra red, or wave soldering techniques. Power dissipation of
greater than 0.8W is possible in a typical PCB mount application.
SO-8
Absolute Maximum Ratings
Parameter
Max.
Units
ID @ TA = 25°C
ID @ TA = 25°C
ID @ TA = 70°C
IDM
10 Sec. Pulsed Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
9.7
8.5
A
5.4
34
PD @TA = 25°C
Power Dissipation
2.5
W
W/°C
V
Linear Derating Factor
0.02
VGS
Gate-to-Source Voltage
±20
dv/dt
TJ,TSTG
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
5.0
V/ns
°C
-55 to + 150
Thermal Resistance Ratings
Parameter
Typ.
Max.
Units
RθJA
Maximum Junction-to-Ambient
–––
50
°C/W
8/25/97
IRF7403
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
30 ––– –––
––– 0.024 ––– V/°C Reference to 25°C, ID = 1mA
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
V
VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
––– ––– 0.022
––– ––– 0.035
1.0 ––– –––
8.4 ––– –––
––– ––– 1.0
––– ––– 25
––– ––– 100
––– ––– -100
––– ––– 57
––– ––– 6.8
––– ––– 18
––– 10 –––
––– 37 –––
––– 42 –––
––– 40 –––
VGS = 10V, ID = 4.0A
VGS = 4.5V, ID = 3.4A
VDS = VGS, ID = 250µA
VDS = 15V, ID = 4.0A
VDS = 24V, VGS = 0V
VDS = 24V, VGS = 0V, TJ = 125°C
VGS = 20V
RDS(ON)
Static Drain-to-Source On-Resistance
Ω
VGS(th)
gfs
Gate Threshold Voltage
V
S
Forward Transconductance
µA
nA
IDSS
IGSS
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
VGS = -20V
Qg
ID = 4.0A
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
nC VDS = 24V
VGS = 10V, See Fig. 6 and 12
VDD = 15V
ID = 4.0A
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
RG = 6.0Ω
RD = 3.7Ω, See Fig. 10
D
LD
LS
Internal Drain Inductance
Internal Source Inductance
––– 2.5 –––
––– 4.0 –––
Between lead tip
nH
pF
G
and center of die contact
S
Ciss
Coss
Crss
Input Capacitance
––– 1200 –––
––– 450 –––
––– 160 –––
VGS = 0V
Output Capacitance
VDS = 25V
Reverse Transfer Capacitance
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
MOSFET symbol
showing the
D
IS
––– ––– 3.1
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
––– ––– 34
p-n junction diode.
S
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
––– ––– 1.0
––– 52 78
––– 93 140
V
TJ = 25°C, IS = 2.0A, VGS = 0V
ns
TJ = 25°C, IF = 4.0A
Qrr
ton
nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
Pulse width ≤ 300µs; duty cycle ≤ 2%.
max. junction temperature. ( See fig. 11 )
ISD ≤ 4.0A, di/dt ≤ 180A/µs, VDD ≤ V(BR)DSS
TJ ≤ 150°C
,
Surface mounted on FR-4 board, t ≤ 10sec.
IRF7403
1 0 0 0
1 0 0
1 0
1 0 0 0
1 0 0
1 0
VGS
15V
VGS
15V
TOP
TOP
10V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
8. 0V
7. 0V
6. 0V
5. 5V
5. 0V
BOTT OM 4.5V
BOTT OM 4.5V
4.5V
4.5V
20µs P ULSE WIDTH
20µs PULSE W IDTH
T
J
= 25°C
T
= 150°C
J
1
A
1 0 0
1
A
1 0 0
0.01
0.1
1
1 0
0.01
0.1
1
1 0
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
D S
D S
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2. 0
1. 5
1. 0
0. 5
0. 0
1000
100
10
I
= 6.7A
D
°
T = 25 C
J
°
T = 150 C
J
V
=
15V
DS
20µs PULSE WIDTH
V
= 10V
G S
A
4
5
6
7
8
9
10
- 6 0
- 4 0
- 2 0
0
2 0
4 0
6 0
8 0
1 0 0 1 2 0 1 4 0 1 6 0
V
, Gate-to-Source Voltage (V)
GS
TJ , Junction Temperature (°C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
IRF7403
2 4 0 0
2 0
1 6
1 2
8
V
C
C
C
= 0V,
f = 1M Hz
I
V
= 4.0A
= 24V
GS
iss
D
DS
= C
+ C
+ C
,
C
SHORTED
gs
gd
ds
= C
= C
rss
oss
gd
ds
2 0 0 0
1 6 0 0
1 2 0 0
8 0 0
4 0 0
0
gd
C
C
iss
o ss
C
rs s
4
FOR TES T CIRCUIT
SEE FIGURE 12
0
A
A
1
1 0
1 0 0
0
1 0
2 0
3 0
4 0
5 0
6 0
VD S , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs.
Fig 6. Typical Gate Charge Vs.
Drain-to-Source Voltage
Gate-to-Source Voltage
1 0 0
1 0
1
100
10
1
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
100us
T
= 150°C
T
= 25°C
J
J
1ms
10ms
T = 25°C
A
T = 150°C
J
Single Pulse
V
= 0V
GS
0. 1
A
0.1
1
10
100
0. 0
0. 5
1. 0
1. 5
2. 0
2. 5
3. 0
V
, Drain-to-Source Voltage (V)
VSD , Source-to-Drain Voltage (V)
DS
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
Forward Voltage
IRF7403
RD
VDS
VGS
10.0
8.0
6.0
4.0
2.0
0.0
D.U.T.
RG
+ VDD
-
10 V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
10%
25
50
T
75
100
125
°
150
V
GS
, Case Temperature ( C)
C
t
t
r
t
t
f
d(on)
d(off)
Fig 9. Maximum Drain Current Vs.
Fig 10b. Switching Time Waveforms
Ambient Temperature
100
10
1
D = 0.50
0.20
0.10
0.05
P
DM
0.02
0.01
t
1
t
2
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D =
t / t
1
2
2. Peak T = P
J
x Z
+ T
A
DM
thJA
0.1
0.0001
0.001
0.01
0.1
1
10
100
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
IRF7403
Current Regulator
Same Type as D.U.T.
50KΩ
.2µF
.3µF
12V
Q
G
+
10 V
V
DS
D.U.T.
-
Q
Q
GD
GS
V
GS
V
G
3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 12a. Basic Gate Charge Waveform
Fig 12b. Gate Charge Test Circuit
IRF7403
Peak Diode Recovery dv/dt Test Circuit
+
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
D.U.T
-
+
-
-
+
**
RG
• dv/dt controlled by RG
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
+
-
*
VDD
VGS
*
* Reverse Polarity for P-Channel
** Use P-Channel Driver for P-Channel Measurements
Driver Gate Drive
P.W.
Period
Period
D =
P.W.
V
[
=10V
] ***
GS
D.U.T. I Waveform
SD
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
[
[
DD
]
Re-Applied
Voltage
Body Diode
Forward Drop
Inductor Curent
I
]
SD
Ripple ≤ 5%
*** VGS = 5.0V for Logic Level and 3V Drive Devices
Fig 13. For N-Channel HEXFETS
IRF7403
Package Outline
SO-8 Outline
Dimensions are shown in millimeters (inches)
INCHES
MILLIMETERS
DIM
D
MIN
MAX
MIN
MAX
1.75
5
-
B -
A
.0532
.0040
.014
.0688
.0098
.018
1.35
0.10
0.36
0.19
4.80
A1
B
0.25
0.46
0.25
4.98
3.99
8
1
7
6
3
5
4
5
H
E
A
-
-
0.25 (.010)
M
A
M
C
D
E
.0075
.189
.0098
.196
2
.150
.157
3.81
e
e
.050 BASIC
.025 BASIC
1.27 BASIC
K
x 45°
6X
e 1
e1
H
K
0.635 BASIC
θ
.2284
.011
0.16
0°
.2440
5.80
0.28
0.41
0°
6.20
0.48
1.27
8°
A
.019
.050
8°
-
C -
0.10 (.004)
6
C
8X
L
8X
A1
L
B
8X
θ
0.25 (.010)
M
C A S B S
R E C O M M E N D E D F O O T P R I N T
N O T E S :
1. DIMENSIONING AND TOLERANCING PER ANSI Y14. 5M-1982.
2. CONTROLLING DIMENSION INCH.
0.72 (.028
8X
)
:
3. DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES).
4. OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA.
6.46
(
.255
)
1. 78 (. 070)
8X
5
D I M E N S I O N D O E S N O T I N C L U D E M O L D P R O T R U S I O N S
MOLD PROTRUSIONS NOT TO EXCEED 0. 25 (. 006).
DIMENSIONS IS THE LENGTH OF LEAD FOR SOLDERING TO
A
SUBSTRATE..
6
1.27
(
.050
)
3X
Part Marking Information
SO-8
EXAM PLE : THIS IS AN IRF7 101
DATE CODE (YW W )
LAST DIGIT OF THE YEAR
W EEK
Y
=
W W
=
3 12
XXXX
INTERNATIONAL
RECTIFIER
LOGO
F7 101
W AFER
LOT CODE
(LAST DIGITS)
PART NUM BER
TOP
4
BOTTOM
IRF7403
Tape & Reel Information
SO-8
Dimensions are shown in millimeters (inches)
1 .8 5 (. 07 2)
1 .6 5 (. 06 5)
4 .1 0 (. 16 1)
3 .9 0 (. 15 4)
0 .35 (.0 13 )
0 .25 (.0 10 )
1 .60 (. 06 2)
1 .50 (. 05 9)
2 .0 5 (. 08 0)
1 .9 5 (. 07 7)
T E R M IN AT IO N
N U M B E R
1
5.5 5 (. 21 8)
5.4 5 (. 21 5)
1
12 .30 (.4 8 4)
11 .70 (.4 6 1)
5.3 0 (. 20 8)
5.1 0 (. 20 1)
2.6 0 (.1 02 )
1.5 0 (.0 59 )
8.1 0 (.31 8)
7.9 0 (.31 1)
F E E D D IR EC T IO N
2 .20 (.0 8 6)
2 .00 (.0 7 9)
6 .5 0 (.25 5)
6 .3 0 (.24 8)
1 5. 40 (.6 07 )
1 1. 90 (.4 69 )
1 3. 20 (.5 19 )
1 2. 80 (.5 04 )
2
50 .0 0
(1.9 69 )
M IN .
3 30 .00
(13 .00 0)
M A X .
18 .4 0 (.72 4)
M A X
N O T E S :
3
1 4. 40 (.5 66 )
1 2. 40 (.4 48 )
3
1
2
3
4
C O N F O R M S T O E IA-4 81 -1
IN C L U D ES F LA N G E D IS T O R T IO N
@ O U T E R E D G E
D IM E N SIO N S M E AS U R E D
@ H U B
C O N T R O L LIN G D IM EN S IO N : M E T R IC
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371
http://www.irf.com/
Data and specifications subject to change without notice.
8/97
相关型号：
IRF7406GPBF
Power Field-Effect Transistor, 5.8A I(D), 30V, 0.045ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, HALOGEN AND LEAD FREE, SOP-8
INFINEON
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