IRF7476 [INFINEON]
Power MOSFET(Vdss=12V, Id=15A); 功率MOSFET ( VDSS = 12V ,ID = 15A)型号: | IRF7476 |
厂家: | Infineon |
描述: | Power MOSFET(Vdss=12V, Id=15A) |
文件: | 总8页 (文件大小:112K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
PD - 94311
IRF7476
HEXFET® Power MOSFET
Applications
VDSS
12V
RDS(on) max
ID
l High Frequency 3.3V and 5V input Point-
of-Load Synchronous Buck Converters for
Netcom and Computing Applications.
lPower Management for Netcom,
Computing and Portable Applications.
8.0mΩ@VGS = 4.5V 15A
A
A
D
1
2
3
4
8
S
S
7
D
Benefits
l Ultra-Low Gate Impedance
l Very Low RDS(on)
l Fully Characterized Avalanche Voltage
and Current
6
S
D
5
G
D
SO-8
Top View
Absolute Maximum Ratings
Symbol
Parameter
Max.
Units
VDS
Drain-Source Voltage
12
V
VGS
Gate-to-Source Voltage
±12
V
ID @ TA = 25°C
ID @ TA = 70°C
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
15
12
A
120
PD @TA = 25°C
PD @TA = 70°C
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
2.5
W
W
1.6
0.02
W/°C
°C
TJ , TSTG
Junction and Storage Temperature Range
-55 to + 150
Thermal Resistance
Symbol
RθJL
Parameter
Junction-to-Drain Lead
Typ.
–––
Max.
20
Units
RθJA
Junction-to-Ambient
–––
50
°C/W
Notes through are on page 8
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1
04/29/02
IRF7476
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
12 ––– –––
––– 0.014 ––– V/°C Reference to 25°C, ID = 1mA
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
V
VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
–––
–––
0.6
6.0
12
8.0
30
VGS = 4.5V, ID = 15A
VGS = 2.8V, ID = 12A
VDS = VGS, ID = 250µA
VDS = 9.6V, VGS = 0V
VDS = 9.6V, VGS = 0V, TJ = 125°C
VGS = 12V
mΩ
V
RDS(on)
VGS(th)
IDSS
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
––– 1.9
––– ––– 100
––– ––– 250
––– ––– 200
––– ––– -200
µA
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
IGSS
nA
VGS = -12V
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
gfs
Parameter
Forward Transconductance
Total Gate Charge
Min. Typ. Max. Units
Conditions
VDS = 6.0V, ID = 12A
ID = 12A
31
––– –––
26 40
S
Qg
–––
–––
–––
–––
–––
–––
–––
–––
Qgs
Qgd
Qoss
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Output Gate Charge
Turn-On Delay Time
Rise Time
4.6 –––
11 –––
17 –––
11 –––
29 –––
19 –––
8.3 –––
nC VDS = 10V
VGS = 4.5V
VGS = 0V, VDS = 5.0V
VDD = 6.0V
ID = 12A
ns
pF
td(off)
tf
Turn-Off Delay Time
Fall Time
RG = 1.8Ω
VGS = 4.5V
VGS = 0V
Ciss
Coss
Crss
Input Capacitance
––– 2550 –––
––– 2190 –––
––– 450 –––
Output Capacitance
Reverse Transfer Capacitance
VDS = 6.0V
ƒ = 1.0MHz
Avalanche Characteristics
Symbol
EAS
Parameter
Single Pulse Avalanche Energy
Avalanche Current
Typ.
–––
–––
Max.
160
12
Units
mJ
IAR
A
Diode Characteristics
Symbol
IS
Parameter
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
Continuous Source Current
(Body Diode)
2.5
––– –––
––– –––
showing the
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
p-n junction diode.
120
S
––– 0.87 1.2
––– 0.73 –––
V
TJ = 25°C, IS = 12A, VGS = 0V
TJ = 125°C, IS = 12A, VGS = 0V
TJ = 25°C, IF = 12A, VR=12V
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Time
Reverse Recovery Charge
––– 55
––– 59
––– 54
––– 60
82
89
81
90
ns
Qrr
trr
nC di/dt = 100A/µs
ns TJ = 125°C, IF = 12A, VR=12V
nC di/dt = 100A/µs
Qrr
2
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IRF7476
1000
100
10
1000
100
10
VGS
VGS
TOP
10V
8.0V
5.0V
4.5V
3.5V
2.7V
2.0V
TOP
10V
8.0V
5.0V
4.5V
3.5V
2.7V
2.0V
BOTTOM 1.5V
BOTTOM 1.5V
1
1
1.5V
0.1
1.5V
0.1
0.01
0.01
0.001
20µs PULSE WIDTH
Tj = 150°C
20µs PULSE WIDTH
Tj = 25°C
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000.00
2.0
15A
=
I
D
100.00
10.00
1.00
1.5
1.0
0.5
0.0
T
= 150°C
J
T
= 25°C
J
V
= 10V
DS
20µs PULSE WIDTH
V
= 4.5V
GS
0.10
-60 -40 -20
0
20
40
60
80 100 120 140 160
1.5
2.0
2.5
3.0
3.5
4.0
Tj, Junction Temperature (°C)
V
, Gate-to-Source Voltage (V)
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
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3
IRF7476
6
5
4
3
2
1
0
100000
V
I
= 0V,
f = 1 MHZ
=
12A
D
GS
V
V
V
=
=
=
9.6V
6V
C
= C + C , C SHORTED
DS
DS
DS
iss
gs gd ds
C
= C
rss
gd
2.4V
C
= C + C
ds gd
oss
10000
1000
100
C
C
iss
oss
C
rss
0
5
10
15
20
25
30
1
10
, Drain-to-Source Voltage (V)
100
Q
, Total Gate Charge (nC)
G
V
DS
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
1000
100
10
1000
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
100
10
1
100µsec
°
C
T
= 150
J
1msec
10msec
°
C
T
= 25
J
1
Tc = 25°C
Tj = 150°C
Single Pulse
V
= 0 V
GS
0.1
0.1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0
1
10
100
VSD, Source-to-Drain Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
Forward Voltage
4
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IRF7476
15
12
9
RD
VDS
VGS
D.U.T.
RG
+VDD
-
4.5V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
6
Fig 10a. Switching Time Test Circuit
3
V
DS
90%
0
25
50
75
100
125
150
Tc, Case Temperature (°C)
10%
V
GS
Fig 9. Maximum Drain Current Vs.
t
t
r
t
t
f
d(on)
d(off)
Case Temperature
Fig 10b. Switching Time Waveforms
100
D = 0.50
0.20
0.10
0.05
10
P
DM
0.02
0.01
1
t
1
SINGLE PULSE
t
2
(THERMAL RESPONSE)
Notes:
1. Duty factor D =
t
/ t
1
2
2. Peak T
= P
x
Z
+ T
J
DM
thJA
A
0.1
0.0001
0.001
0.01
0.1
1
10
100
1000
t , Rectangular Pulse Duration (sec)
1
Fig 10. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRF7476
7.5
7.3
7.0
6.8
6.5
15.00
13.00
11.00
9.00
V
= 4.5V
GS
I
= 15A
D
7.00
5.00
2.0
4.0
6.0
8.0
10.0
0
20
40
60
80
100
120
V
Gate -to -Source Voltage (V)
I
, Drain Current (A)
GS,
D
Fig 12. On-Resistance Vs. Drain Current
Fig 13. On-Resistance Vs. Gate Voltage
Current Regulator
Same Type as D.U.T.
Q
G
50KΩ
.3µF
VGS
.2µF
12V
Q
Q
GD
GS
+
V
400
DS
D.U.T.
-
V
I
G
D
V
GS
TOP
5.4A
9.6A
12A
3mA
Charge
BOTTOM
I
I
D
G
Current Sampling Resistors
300
200
100
0
Fig 13a&b. Basic Gate Charge Test Circuit
and Waveform
15 V
V
(B R )D S S
DRIVER
L
t
p
V
DS
D.U.T
AS
R
G
+
V
DD
-
I
A
25
50
75
100
125
150
20V
0.01
Ω
t
p
Starting Tj, Junction Temperature (°C)
I
A S
Fig 14c. Maximum Avalanche Energy
Fig 14a&b. Unclamped Inductive Test circuit
Vs. Drain Current
and Waveforms
6
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IRF7476
SO-8 Package Details
INCHES
MILLIMETERS
DIM
A
D
B
MIN
.0532
MAX
.0688
.0098
.020
MIN
1.35
0.10
0.33
0.19
4.80
3.80
MAX
1.75
0.25
0.51
0.25
5.00
4.00
5
A
A1 .0040
b
c
.013
8
1
7
2
6
3
5
4
.0075
.189
.0098
.1968
.1574
6
H
D
E
e
E
0.25 [.010]
A
.1497
.050 BASIC
1.27 BASIC
0.635 BASIC
e 1 .025 BASIC
H
K
L
y
.2284
.0099
.016
0°
.2440
.0196
.050
8°
5.80
0.25
0.40
0°
6.20
0.50
1.27
8°
e
6X
e1
K x 45°
A
C
y
0.10 [.004]
8X c
A1
B
8X L
8X b
0.25 [.010]
7
C
A
FOOTPRINT
8X 0.72 [.028]
NOT ES :
1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994.
2. CONT ROLLING DIMENS ION: MILLIMET ER
3. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].
4. OUT L INE CONF OR MS T O JE DE C OUT L INE MS -012AA.
5
6
7
DIMENSION DOES NOT INCLUDE MOLD PROT RUSIONS.
MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006].
6.46 [.255]
DIMENSION DOES NOT INCLUDE MOLD PROT RUSIONS.
MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010].
DIMENSION IS THE LENGTH OF LEAD FOR SOLDERING TO
ASUBSTRATE.
3X 1.27 [.050]
8X 1.78 [.070]
SO-8 Part Marking
EXAMPLE: THIS IS AN IRF7101 (MOSFET)
DATE CODE (YWW)
Y = LAST DIGIT OF THE YEAR
WW = WEEK
YWW
XXXX
LOT CODE
INTERNATIONAL
RECTIFIER
LOGO
F7101
PART NUMBER
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7
IRF7476
SO-8 Tape and Reel
TERM INAL NUM BER
1
12.3
11.7
(
(
.484
.461
)
)
8.1
7.9
(
(
.318
.312
)
)
FEED DIRECTION
N OTES:
1. CO NTRO LLING DIMEN SION : MILLIMETER.
2. ALL DIM ENSION S ARE SH O W N IN M ILLIM ETERS (IN CHES ).
3. OU TLIN E CO NFO RMS TO EIA-481
& EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566
12.40 ( .488
)
)
NOTES
1. CONTROLLING DIMENSION
2. OUTLINE CONFORMS TO EIA-481
:
:
MILLIM ETER.
EIA-541.
&
Notes:
Repetitive rating; pulse width limited by
Pulse width ≤ 400µs; duty cycle ≤ 2%.
max. junction temperature.
When mounted on 1 inch square copper board.
Starting TJ = 25°C, L = 2.3mH
RG = 25Ω, IAS = 12A.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.04/02
8
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