IRF7493PBF-1 [INFINEON]
Industry-standard pinout SO-8 Package;
| 型号： | IRF7493PBF-1 |
| 厂家： | 
Infineon |
| 描述： | Industry-standard pinout SO-8 Package |
| 文件： | 总9页 (文件大小：224K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IRF7493PbF-1
HEXFET® Power MOSFET
VDS
80
15
V
A
A
D
1
2
3
4
8
S
S
S
G
RDS(on) max
(@VGS = 10V)
Qg (typical)
m
Ω
7
D
35
nC
A
6
D
ID
5
9.3
D
(@TA = 25°C)
SO-8
Top View
Features
Industry-standard pinout SO-8 Package
Compatible with Existing Surface Mount Techniques
RoHS Compliant, Halogen-Free
Benefits
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
⇒
MSL1, Industrial qualification
Standard Pack
Form
Tube/Bulk
Base Part Number
Package Type
Orderable Part Number
Quantity
95
4000
IRF7493PbF-1
IRF7493TRPbF-1
IRF7493PbF-1
SO-8
Tape and Reel
Absolute Maximum Ratings
Parameter
Max.
80
20
Units
VDS
VGS
Drain-to-Source Voltage
Gate-to-Source Voltage
V
9.3
7.4
I
D @ TA = 25°C
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
A
ID @ TA = 70°C
74
IDM
2.5
PD @TA = 25°C
PD @TA = 70°C
Power Dissipation
W
W/°C
°C
1.6
Power Dissipation
0.02
Linear Derating Factor
-55 to +150
TJ
Operating Junction and
TSTG
Storage Temperature Range
Thermal Resistance
Parameter
Typ.
–––
Max.
20
Units
°C/W
RθJL
RθJA
Junction-to-Lead
Junction-to-Ambient
–––
50
Notes through ꢀare on page 9
1
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IRF7493PbF-1
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
Min. Typ. Max. Units
80 ––– –––
Conditions
VGS = 0V, ID = 250μA
BVDSS
V
ΔΒVDSS/ΔTJ
RDS(on)
VGS(th)
Breakdown Voltage Temp. Coefficient ––– 0.074 ––– mV/°C Reference to 25°C, ID = 1mA
Ω
m
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
–––
2.0
11.5
–––
–––
–––
–––
–––
15
4.0
V
GS = 10V, ID = 5.6A
VDS = VGS, ID = 250μA
DS = 80V, VGS = 0V
VDS = 64V, VGS = 0V, TJ = 125°C
nA VGS = 20V
V
IDSS
Drain-to-Source Leakage Current
–––
–––
–––
–––
20
μA
V
250
200
-200
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
V
GS = -20V
Dynamic @ TJ = 25°C (unless otherwise specified)
gfs
Forward Transconductance
13
–––
–––
53
S
V
DS = 15V, ID = 5.6A
Qg
Total Gate Charge
–––
–––
–––
–––
–––
–––
–––
35
ID = 5.6A
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain Charge
Turn-On Delay Time
Rise Time
5.7
12
–––
–––
–––
–––
–––
–––
VDS = 40V
VGS = 10V
VDD = 40V,
ID = 5.6A
8.3
7.5
30
td(off)
tf
Turn-Off Delay Time
Fall Time
ns RG = 6.2Ω
12
VGS = 10V
Ciss
Coss
Crss
Coss
Coss
Crss eff.
Input Capacitance
––– 1510 –––
V
GS = 0V
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
–––
–––
320
130
–––
–––
pF
VDS = 25V
ƒ = 1.0MHz
––– 1130 –––
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 64V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 64V
–––
–––
210
320
–––
–––
Avalanche Characteristics
Parameter
Single Pulse Avalanche Energy
Typ.
–––
–––
Max.
180
5.6
Units
mJ
EAS
IAR
Avalanche Current
A
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
–––
–––
9.3
MOSFET symbol
(Body Diode)
A
showing the
ISM
Pulsed Source Current
–––
–––
74
integral reverse
(Body Diode)
p-n junction diode.
VSD
trr
Diode Forward Voltage
–––
–––
–––
–––
37
1.3
56
78
V
T = 25°C, I = 5.6A, V = 0V
J S GS
Reverse Recovery Time
Reverse Recovery Charge
ns T = 25°C, I = 5.6A, VDD = 15V
J F
Qrr
di/dt = 100A/μs
52
nC
2
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June 23, 2014
IRF7493PbF-1
100
10
100
10
1
VGS
15V
10V
8.0V
5.5V
5.0V
4.5V
4.0V
VGS
15V
10V
8.0V
5.5V
5.0V
4.5V
4.0V
TOP
TOP
BOTTOM 3.5V
BOTTOM 3.5V
3.5V
1
3.5V
0.1
0.01
20μs PULSE WIDTH
Tj = 25°C
20μs PULSE WIDTH
Tj = 150°C
0.1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100.00
10.00
1.00
2.0
1.5
1.0
0.5
I
= 9.3A
D
V
= 10V
GS
T
= 150°C
J
T
= 25°C
J
V
= 25V
DS
20μs PULSE WIDTH
0.10
3.0
4.0
5.0
6.0
-60 -40 -20
T
0
20 40 60 80 100 120 140 160
V
, Gate-to-Source Voltage (V)
, Junction Temperature (°C)
GS
J
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
3
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June 23, 2014
IRF7493PbF-1
100000
10000
1000
100
20
16
12
8
V
= 0V,
= C
f = 1 MHZ
+ C
GS
I = 5.6A
D
C
C
C
,
C
SHORTED
iss
gs
gd
ds
V
= 64V
DS
= C
rss
oss
gd
VDS= 40V
VDS= 16V
= C + C
ds
gd
Ciss
Coss
Crss
4
0
10
0
10
Q
20
30
40
50
60
1
10
, Drain-to-Source Voltage (V)
100
Total Gate Charge (nC)
G
V
DS
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
100.0
10.0
1.0
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
T
= 150°C
J
100μsec
1msec
1
T
= 25°C
J
Tc = 25°C
Tj = 150°C
Single Pulse
10msec
V
= 0V
GS
0.1
0.1
0
1
10
100
1000
0.2
0.4
0.6
0.8
1.0
1.2
V
, Drain-toSource Voltage (V)
V
, Source-toDrain Voltage (V)
DS
SD
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
Forward Voltage
4
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June 23, 2014
IRF7493PbF-1
10
8
RD
VDS
VGS
10V
D.U.T.
RG
+VDD
-
6
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
4
Fig 10a. Switching Time Test Circuit
2
V
DS
90%
0
25
50
T
75
100
125
150
, Case Temperature (°C)
C
10%
Fig 9. Maximum Drain Current Vs.
V
GS
Ambient Temperature
t
t
r
t
t
f
d(on)
d(off)
Fig 10b. Switching Time Waveforms
100
10
D = 0.50
0.20
0.10
0.05
0.02
0.01
1
0.1
0.01
SINGLE PULSE
( THERMAL RESPONSE )
1E-005
0.0001
0.001
0.01
0.1
1
10
100
t
, Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
5
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IRF7493PbF-1
0.013
0.012
0.011
0.030
0.020
0.010
V
= 10V
GS
I
= 5.6A
D
0
20
I
40
60
80
4.0
8.0
12.0
16.0
, Drain Current (A)
V
Gate -to -Source Voltage (V)
D
GS,
Fig 12. On-Resistance Vs. Drain Current
Fig 13. On-Resistance Vs. Gate Voltage
Current Regulator
Same Type as D.U.T.
Q
G
50KΩ
.3μF
VGS
.2μF
12V
Q
Q
GD
GS
+
V
DS
D.U.T.
-
500
V
G
ID
V
GS
TOP
2.5A
4.5A
3mA
Charge
I
I
400
300
200
100
0
BOTTOM 5.6A
G
D
Current Sampling Resistors
Fig 14a&b. Basic Gate Charge Test Circuit
and Waveform
15V
V
(BR)DSS
DRIVER
+
L
t
p
V
DS
D.U.T
AS
R
G
V
DD
-
25
50
75
100
125
150
I
A
20V
Ω
0.01
t
p
Starting T , Junction Temperature (°C)
I
AS
J
Fig 15c. Maximum Avalanche Energy
Fig 15a&b. Unclamped Inductive Test circuit
Vs. Drain Current
and Waveforms
6
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June 23, 2014
IRF7493PbF-1
Driver Gate Drive
P.W.
P.W.
D =
Period
D.U.T
Period
+
*
=10V
V
GS
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
D.U.T. I Waveform
SD
+
-
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
-
+
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
VDD
Re-Applied
Voltage
• dv/dt controlled by RG
RG
+
-
Body Diode
Forward Drop
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
Inductor Curent
I
SD
Ripple
≤ 5%
* VGS = 5V for Logic Level Devices
Fig 16. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
Id
Vds
Vgs
Vgs(th)
Qgs1
Qgs2
Qgd
Qgodr
Fig 17. Gate Charge Waveform
7
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IRF7493PbF-1
SO-8 Package Outline(Mosfet & Fetky)
Dimensions are shown in milimeters (inches)
INCHES
MILLIMETERS
DIM
D
B
MIN
.0532
A1 .0040
MAX
.0688
.0098
.020
MIN
1.35
0.10
0.33
0.19
4.80
3.80
MAX
1.75
0.25
0.51
0.25
5.00
4.00
5
A
A
E
b
c
D
E
.013
8
1
7
2
6
3
5
.0075
.189
.0098
.1968
.1574
6
H
0.25 [.010]
A
.1497
4
e
.050 BASIC
1.27 BASIC
e1 .025 BASIC
0.635 BASIC
H
K
L
.2284
.0099
.016
0°
.2440
.0196
.050
8°
5.80
0.25
0.40
0°
6.20
0.50
1.27
8°
e
6X
y
e1
A
K x 45°
A
C
y
0.10 [.004]
8X c
A1
B
8X L
8X b
0.25 [.010]
7
C
FOOTPRINT
NOTES:
1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994.
2. CONTROLLINGDIMENSION: MILLIMETER
8X 0.72 [.028]
3. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].
4. OU T L INE CONF OR MS T O JEDE C OU T L INE MS -012AA.
5
6
7
DIMENSION DOES NOT INCLUDE MOLD PROT RUSIONS.
MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006].
DIMENSION DOES NOT INCLUDE MOLD PROT RUSIONS.
MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010].
6.46 [.255]
DIMENSION IS THE LENGT H OF LEAD FOR SOLDERING TO
ASUBSTRATE.
3X 1.27 [.050]
8X 1.78 [.070]
SO-8 Part Marking Information
EXAMPLE: THIS IS AN IRF7101 (MOSFET)
DAT E CODE (YWW)
P = DISGNATES LEAD - FREE
PRODUCT (OPTIONAL)
Y = LAST DIGIT OF THE YEAR
WW = WEE K
A = AS S E MB L Y S IT E CODE
XXXX
F7101
INTERNATIONAL
RECTIFIER
LOGO
LOT CODE
PART NUMBER
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
8
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June 23, 2014
IRF7493PbF-1
SO-8 Tape and Reel (Dimensions are shown in millimeters (inches)
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 12mH, RG = 25Ω, IAS = 5.6A.
Pulse width ≤ 300μs; duty cycle ≤ 2%.
When mounted on 1 inch square copper board
ꢀ Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
Qualification information†
Industrial
(per JEDEC JESD47F†† guidelines)
Qualification level
MS L 1
Moisture Sensitivity Level
RoHS compliant
SO-8
(per JEDEC J-STD-020D††
Yes
)
†
Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability
†† Applicable version of JEDEC standard at the time of product release
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
9
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June 23, 2014
相关型号：
IRF7495TR
Power Field-Effect Transistor, 7.3A I(D), 100V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOP-8
INFINEON
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