IRF7509TRPBF-1 [INFINEON]
Small Signal Field-Effect Transistor,;![IRF7509TRPBF-1](http://pdffile.icpdf.com/pdf2/p00236/img/icpdf/IRF7509PBF-1_1383793_icpdf.jpg)
型号: | IRF7509TRPBF-1 |
厂家: | ![]() |
描述: | Small Signal Field-Effect Transistor, |
文件: | 总8页 (文件大小:236K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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IRF7509PbF-1
HEXFET® Power MOSFET
N-CH P-CH
N-CHANNEL MOSFET
1
2
3
4
8
D1
D1
S1
VDS
30
0.11
7.8
-30
V
Ω
7
RDS(on) max
(@VGS = 10V)
Qg (typical)
ID
G1
0.2
6
5
S2
D2
7.5
-2.0
nC
A
G2
D2
2.7
P-CHANNEL MOSFET
(@TA = 25°C)
Micro8
Top View
Features
Benefits
Industry-standard pinout Micro-8 Package
Multi-Vendor Compatibility
⇒
Compatible with Existing Surface Mount Techniques
RoHS Compliant, Halogen-Free
MSL1, Industrial qualification
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Standard Pack
Form
Base Part Number
Package Type
Orderable Part Number
Quantity
Tube/Bulk
Tape and Reel
95
4000
IRF7509PbF-1
IRF7509TRPbF-1
IRF7509PbF-1
Micro-8
Absolute Maximum Ratings
Parameter
Max.
Units
N-Channel
P-Channel
-30
VDS
Drain-Source Voltage
30
2.7
2.1
21
V
ID @ TA = 25°C
ID @ TA = 70°C
IDM
Continuous Drain Current, VGS
Continuous Drain Current, VGS
Pulsed Drain Current
-2.0
-1.6
A
-16
PD @TA = 25°C
PD @TA = 70°C
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
1.25
0.8
10
W
W
mW/°C
V
VGS
Gate-to-Source Voltage
± 20
30
VGSM
dv/dt
Gate-to-Source Voltage Single Pulse tp<10μS
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
Soldering Temperature, for 10 seconds
V
5.0
V/ns
°C
TJ , TSTG
-55 to + 150
240 (1.6mm from case)
Thermal Resistance
Parameter
Max.
Units
RθJA
Maximum Junction-to-Ambient
100
°C/W
1
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IRF7509PbF-1
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
VGS = 0V, ID = 250µA
GS = 0V, ID = -250µA
Reference to 25°C, ID = 1mA
Reference to 25°C, ID = -1mA
VGS = 10V, ID = 1.7A
N-Ch 30
P-Ch -30
0.059
-0.039
V(BR)DSS
Drain-to-SourceBreakdownVoltage
V
V
N-Ch
P-Ch
ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient
V/°C
0.09 0.110
0.14 0.175
0.17 0.20
0.30 0.40
N-Ch
P-Ch
V
GS = 4.5V, ID = 0.85A
VGS = -10V, ID =-1.2A
GS = -4.5V, ID =-0.6A
RDS(ON)
Static Drain-to-Source On-Resistance
Ω
V
N-Ch 1.0
P-Ch -1.0
N-Ch 1.9
P-Ch 0.92
VDS = VGS, ID = 250µA
VDS = VGS, ID = -250µA
VDS = 10V, ID = 0.85A
DS = -10V, ID = -0.6A
VDS = 24 V, VGS = 0V
VDS = -24V, VGS = 0V
VDS = 24 V, VGS = 0V, TJ = 125°C
VDS = -24V, VGS = 0V, TJ = 125°C
VGS = ± 20V
VGS(th)
gfs
Gate Threshold Voltage
V
S
ForwardTransconductance
V
N-Ch
P-Ch
N-Ch
P-Ch
1.0
-1.0
25
-25
±100
IDSS
Drain-to-SourceLeakageCurrent
µA
IGSS
Qg
Gate-to-SourceForwardLeakage
Total Gate Charge
N-P
N-Ch 7.8 12
P-Ch 7.5 11
N-Ch 1.21.8
P-Ch 1.3 1.9
N-Ch 2.5 3.8
N-Channel
ID = 1.7A, VDS = 24V, VGS = 10V
Qgs
Qgd
td(on)
tr
Gate-to-SourceCharge
Gate-to-Drain("Miller")Charge
Turn-On Delay Time
Rise Time
nC
P-Channel
ID = -1.2A, VDS = -24V, VGS = -10V
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
2.5 3.7
4.7
9.7
10
N-Channel
VDD = 15V, ID = 1.7A, RG = 6.1Ω,
RD = 8.7Ω
12
12
19
ns
pF
td(off)
tf
Turn-Off Delay Time
Fall Time
P-Channel
V
DD = -15V, ID = -1.2A, RG = 6.2Ω,
5.3
9.3
210
180
80
RD = 12Ω
Ciss
Coss
Crss
Input Capacitance
N-Channel
VGS = 0V, VDS = 25V, = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
87
32
42
P-Channel
VGS = 0V, VDS = -25V, = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter
N-Ch
Min. Typ. Max. Units
Conditions
40
30
48
37
1.25
-1.25
21
IS
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
DiodeForwardVoltage
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
A
ISM
VSD
trr
-16
1.2T
-1.2T
60
45
72
J = 25°C, IS = 1.7A, VGS = 0V
J = 25°C, IS = -1.8A, VGS = 0V
V
N-Channel
ns
nC
Reverse Recovery Time
TJ = 25°C, IF = 1.7A, di/dt = 100A/µs
P-Channel
Qrr
Reverse Recovery Charge
TJ = 25°C, IF = -1.2A, di/dt = -100A/µs
55
Notes:
Repetitive rating; pulse width limited by
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Surface mounted on FR-4 board, t ≤ 10sec.
max. junction temperature. ( See fig. 21 )
N-Channel ISD ≤ 1.7A, di/dt ≤ 120A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C
P-Channel ISD ≤ -1.2A, di/dt ≤ 160A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C
2
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IRF7509PbF-1
N - Channel
100
10
1
100
10
1
VGS
15V
VGS
15V
10V
TOP
TOP
10V
7.0V
5.5V
4.5V
4.0V
3.5V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 3.0V
BOTTOM 3.0V
3.0V
3.0V
20μs PULSE WIDTH
20μs PULSE WIDTH
T
= 150°C
T
= 25°C
J
J
A
A
0.1
0.1
0.1
1
10
0.1
1
10
V
, Drain-to-Source Voltage (V)
DS
V
, Drain-to-Source Voltage (V)
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
100
TJ = 25°C
TJ = 150°C
10
10
T = 150°C
J
T = 25°C
J
1
1
V DS= 10V
20μs PULSE WIDTH
V
GS
= 0V
0.1
A
0.1
6.0A
3.0
3.5
4.0
4.5
5.0
5.5
0.4
0.8
1.2
1.6
2.0
VGS , Gate-to-Source Voltage (V)
V
, Source-to-Drain Voltage (V)
SD
Fig 3. Typical Transfer Characteristics
Fig 4. Typical Source-Drain Diode
ForwardVoltage
2.0
0.220
I
= 1.7A
D
1.5
1.0
0.5
0.0
0.180
VGS = 4.5V
0.140
0.100
VGS = 10V
V
= 10V
GS
0.060
A
0
2
4
6
8
10
-60 -40 -20
0
20 40
60 80 100 120 140 160
I
, Drain Current (A)
T
J
, Junction Temperature (°C)
D
Fig 5. Normalized On-Resistance
Fig 6. Typical On-Resistance Vs. Drain
Vs.Temperature
Current
3
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IRF7509PbF-1
N - Channel
100
10
1
0.140
0.120
0.100
0.080
0.060
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
10us
ID = 2.7A
100us
1ms
10ms
°
= 25 C
°
= 150 C
T
C
T
J
Single Pulse
0.1
0
4
8
12
16
1
10
100
V
, Gate-to-Source Voltage (V)
GS
V
, Drain-to-Source Voltage (V)
DS
Fig 8. Maximum Safe Operating Area
Fig 7. Typical On-Resistance Vs. Gate
Voltage
20
400
I
= 1.7A
V
C
C
C
= 0V,
f = 1MHz
D
GS
iss
rss
oss
= C + C
,
C
SHORTED
V
V
= 24V
= 15V
gs
gd
gd
ds
DS
DS
= C
= C + C
ds
gd
16
12
8
300
200
100
0
C
C
iss
oss
C
rss
4
FOR TEST CIRCUIT
SEE FIGURE 9
0
A
A
1
10
100
0
2
4
6
8
10
12
V
, Drain-to-Source Voltage (V)
Q
, Total Gate Charge (nC)
DS
G
Fig 9. Typical Capacitance Vs.
Fig 10. Typical Gate Charge Vs.
Drain-to-SourceVoltage
Gate-to-SourceVoltage
4
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June 27, 2014
IRF7509PbF-1
P - Channel
10
10
VGS
- 15V
VGS
- 15V
- 10V
TOP
TOP
- 10V
- 7.0V
- 5.5V
- 4.5V
- 4.0V
- 3.5V
- 7.0V
- 5.5V
- 4.5V
- 4.0V
- 3.5V
BOTTOM - 3.0V
BOTTOM - 3.0V
1
1
-3.0V
-3.0V
20μs PULSE WIDTH
20μs PULSE WIDTH
T
J
= 150°C
T
J
= 25°C
A
A
0.1
0.1
0.1
1
10
0.1
1
10
-V , Drain-to-Source Voltage (V)
DS
-V , Drain-to-Source Voltage (V)
DS
Fig 11. Typical Output Characteristics
Fig 12. Typical Output Characteristics
10
10
TJ = 25°C
TJ = 150°C
T
= 150°C
J
T
= 25°C
J
1
1
VDS = -10V
20μs PULSE WIDTH
V
= 0V
GS
A
0.1
0.1
7.0A
0.4
0.6
0.8
1.0
1.2
1.4
3.0
4.0
5.0
6.0
-V , Source-to-Drain Voltage (V)
SD
-VGS , Gate-to-Source Voltage (V)
Fig 13. Typical Transfer Characteristics
Fig 14. Typical Source-Drain Diode
ForwardVoltage
2.0
I
= -1.2A
D
1.5
1.0
0.5
0.0
V
= -10V
GS
A
-60 -40 -20
0
20 40
60 80 100 120 140 160
T
J
, Junction Temperature (°C)
Fig 15. Normalized On-Resistance
Fig 16. Typical On-Resistance Vs. Drain
Vs.Temperature
Current
5
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IRF7509PbF-1
P - Channel
100
10
1
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
10us
100us
1ms
10ms
°
= 25 C
T
C
°
= 150 C
T
J
Single Pulse
0.1
1
10
100
-V , Drain-to-Source Voltage (V)
DS
Fig 17. Typical On-Resistance Vs. Gate
Fig 18. Maximum Safe Operating Area
Voltage
400
20
V
C
C
C
= 0V,
f = 1MHz
I
= -1.2A
GS
iss
rss
oss
D
= C + C
,
C
SHORTED
gs
gd
gd
ds
= C
gd
V
= -24V
= -15V
DS
= C + C
ds
16
12
8
V
DS
300
200
100
0
C
C
iss
oss
C
rss
4
FOR TEST CIRCUIT
SEE FIGURE 9
0
A
A
0
2
4
6
8
10
12
1
10
100
-V , Drain-to-Source Voltage (V)
Q
, Total Gate Charge (nC)
G
DS
Fig 20. Typical Gate Charge Vs.
Fig 19. Typical Capacitance Vs.
Gate-to-SourceVoltage
Drain-to-SourceVoltage
N-P - Channel
1000
100
D = 0.50
0.20
0.10
10
0.05
P
2
DM
0.02
0.01
t
1
1
t
2
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D =
t
/ t
1
2. Peak T =P
J
x
Z
+ T
thJA A
DM
0.1
0.00001
0.0001
0.001
0.01
0.1
1
10
100
t , Rectangular Pulse Duration (sec)
1
Fig 21. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
6
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June 27, 2014
IRF7509PbF-1
Micro8 Package Outline
Dimensions are shown in milimeters (inches)
LEAD ASSIGNMENTS
INCHES
MILLIMETERS
DIM
A
D
MIN
.036
MAX
.044
.008
.014
.007
.120
MIN
0.91
0.10
0.25
0.13
2.95
MAX
1.11
0.20
0.36
0.18
3.05
3
- B -
D
D
D
D
D1 D1 D2 D2
A1 .004
8
1
7
6
5
4
8
1
7
6
5
B
C
D
e
.010
.005
.116
8
1
7
2
6
3
5
4
3
SINGLE
DUAL
H
E
0.25 (.010)
M
A
M
- A -
2
3
2
3
4
.0256 BASIC
.0128 BASIC
0.65 BASIC
0.33 BASIC
e1
E
H
L
S1 G1 S2 G2
S
S
S
G
.116
.188
.016
0°
.120
.198
.026
6°
2.95
4.78
0.41
0°
3.05
5.03
0.66
6°
e
θ
6X
e 1
RECOMMENDED FOOTPRINT
θ
1.04
( .041 )
8X
0.38
8X
A
( .015 )
- C -
B
0.10 (.004)
A 1
C
L
8X
0.08 (.003)
8X
8X
M
C
A
S
B S
3.20
( .126 )
4.24
( .167 ) ( .208 )
5.28
NOTES:
1
2
3
DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1982.
CONTROLLING DIMENSION : INCH.
0.65
( .0256 )
6X
DIMENSIONS DO NOT INCLUDE MOLD FLASH.
Micro8 Part Marking Information (Lead-Free)
EXAMPLE: THIS IS AN IRF7501
DATE CODE (YW)
Y = YEAR
W= WEEK
LOT CODE (XX)
PART NUMBER
P = DESIGNATES LEAD-FREE PRODUCT (OPTIONAL)
WW= (1-26) IF PRECEDED BY LAST DIGIT OF CALENDAR YEAR
WORK
YEAR
Y
WEEK
W
2001
2002
2003
1994
1995
1996
1997
1998
1999
2000
1
2
3
4
5
6
7
8
9
0
01
02
03
04
A
B
C
D
DATE CODE EXAMPLES:
YWW = 9503 = 5C
YWW = 9532 = EF
24
25
26
X
Y
Z
WW= (27-52) IF PRECEDED BY ALETTER
WORK
YEAR
Y
WEEK
W
2001
2002
2003
1994
1995
1996
1997
1998
1999
2000
A
B
C
D
E
27
28
29
30
A
B
C
D
F
G
H
J
K
50
51
52
X
Y
Z
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
7
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June 27, 2014
IRF7509PbF-1
Micro8 Tape & Reel Information
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. OUTLINE CONFORMS TO EIA-481 & EIA-541.
2. CONTROLLING DIMENSION : MILLIMETER.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
Qualification information†
Industrial
(per JEDEC JESD47F†† guidelines)
Qualification level
MS L 1
Moisture Sensitivity Level
RoHS compliant
Micro-8
(per JEDEC J-STD-020D††
Yes
)
†
Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability
†† Applicable version of JEDEC standard at the time of product release
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
8
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June 27, 2014
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