IRF7521D1 [INFINEON]
FETKY⑩ MOSFET / Schottky Diode(Vdss=20V, Rds(on)=0.135ohm, Schottky Vf=0.39V); FETKY⑩ MOSFET /肖特基二极管（ VDSS = 20V ， RDS（ON） = 0.135ohm ，肖特基VF = 0.39V ）
| 型号： | IRF7521D1 |
| 厂家： | 
Infineon |
| 描述： | FETKY⑩ MOSFET / Schottky Diode(Vdss=20V, Rds(on)=0.135ohm, Schottky Vf=0.39V) |
| 文件： | 总8页 (文件大小：179K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD-91646C
IRF7521D1
PRELIMINARY
FETKY MOSFET / Schottky Diode
● Co-packaged HEXFET® Power MOSFET
and Schottky Diode
● N-Channel HEXFET
1
8
7
K
K
A
VDSS = 20V
2
A
● Low VF Schottky Rectifier
● Generation 5 Technology
● Micro8 Footprint
R
DS(on) = 0.135Ω
3
4
6
5
S
D
D
TM
G
Schottky Vf = 0.39V
Top View
Description
The FETKYTM family of co-packaged HEXFETs and Schottky diodes offer the
designer an innovative board space saving solution for switching regulator
applications. Generation 5 HEXFETs utilize advanced processing techniques to
achieve extremely low on-resistance per silicon area. Combining this technology
with International Rectifier's low forward drop Schottky rectifiers results in an
extremely efficient device suitable for use in a wide variety of portable electronics
applications like cell phone, PDA, etc.
Micro8TM
The new Micro8TM package, with half the footprint area of the standard SO-8,
provides the smallest footprint available in an SOIC outline. This makes the Micro8TM
an ideal device for applications where printed circuit board space is at a premium.
The low profile (<1.1mm) of the Micro8TM will allow it to fit easily into extremely thin
application environments such as portable electronics and PCMCIA cards.
Absolute Maximum Ratings (TA = 25°C unless otherwise noted)
Parameter
Maximum
Units
ID @ TA = 25°C
ID @ TA = 70°C
IDM
Continuous Drain Current, VGS @ 4.5V
2.4
A
1.9
Pulsed Drain Current ➀
Power Dissipation
19
1.3
PD @TA = 25°C
PD @TA = 70°C
W
0.8
Linear Derating Factor
10
mW/°C
V
VGS
Gate-to-Source Voltage
± 12
dv/dt
Peak Diode Recovery dv/dt ➁
Junction and Storage Temperature Range
5.0
V/ns
°C
TJ, TSTG
-55 to +150
Thermal Resistance Ratings
Parameter
Maximum
Units
RθJA
Junction-to-Ambient ➃
100
°C/W
Notes:
➀ Repetitive rating; pulse width limited by maximum junction temperature (see figure 9)
➁ ISD ≤ 1.7A, di/dt ≤ 66A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C
➂ Pulse width ≤ 300µs; duty cycle ≤ 2%
➃ Surface mounted on FR-4 board, t ≤ 10sec.
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1
01/29/99
2
IRF7521D1
MOSFET Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
VGS = 0V, ID = 250µA
VGS = 4.5V, ID = 1.7A
VGS = 2.7V, ID = 0.85A
VDS = VGS, ID = 250µA
VDS = 10V, ID = 0.85A
VDS = 16V, VGS = 0V
VDS = 16V, VGS = 0V, TJ = 125°C
VGS = 12V
V(BR)DSS
RDS(on)
Drain-to-Source Breakdown Voltage
20 ––– –––
––– 0.085 0.135
––– 0.12 0.20
0.70 ––– –––
2.6 ––– –––
––– ––– 1.0
––– ––– 25
––– ––– 100
––– ––– -100
––– 5.3 8.0
––– 0.84 1.3
––– 2.2 3.3
––– 5.7 –––
––– 24 –––
––– 15 –––
––– 16 –––
––– 260 –––
––– 130 –––
––– 61 –––
V
Static Drain-to-Source On-Resistance
Ω
VGS(th)
gfs
Gate Threshold Voltage
V
S
Forward Transconductance
IDSS
IGSS
Drain-to-Source Leakage Current
µA
nA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
VGS = -12V
Qg
ID = 1.7A
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
nC VDS = 16V
VGS = 4.5V, See Fig. 6
VDD = 10V
ID = 1.7A
ns
pF
td(off)
tf
Turn-Off Delay Time
Fall Time
RG = 6.0Ω
RD = 5.7Ω,
VGS = 0V
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
VDS = 15V
Reverse Transfer Capacitance
ƒ = 1.0MHz, See Fig. 5
MOSFET Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current(Body Diode) ––– ––– 1.3
A
ISM
VSD
trr
Pulsed Source Current (Body Diode)
Body Diode Forward Voltage
––– ––– 14
––– ––– 1.2
V
TJ = 25°C, IS = 1.7A, VGS = 0V
TJ = 25°C, IF = 1.7A
Reverse Recovery Time (Body Diode)
Reverse RecoveryCharge
––– 39
––– 37
59
56
ns
Qrr
nC di/dt = 100A/µs
Schottky Diode Maximum Ratings
Parameter
Max. Units.
Conditions
IF(av)
Max. Average Forward Current
1.9
1.4
120
11
50% Duty Cycle. Rectangular Wave, TA = 25°C
A
See
Fig.14
TA = 70°C
ISM
Max. peak one cycle Non-repetitive
Surge current
5µs sine or 3µs Rect. pulse
Following any rated
10ms sine or 6ms Rect. pulse load condition &
with VRRM applied
A
Schottky Diode Electrical Specifications
Parameter
Max. Units
Conditions
IF = 1.0A, TJ = 25°C
IF = 2.0A, TJ = 25°C
IF = 1.0A, TJ = 125°C
IF = 2.0A, TJ = 125°C .
VR = 20V TJ = 25°C
TJ = 125°C
VFM
Max. Forward voltage drop
0.50
0.62
V
0.39
0.57
IRM
Max. Reverse Leakage current
0.02
mA
8
Ct
Max. Junction Capacitance
Max. Voltage Rate of Charge
92
pF
VR = 5Vdc ( 100kHz to 1 MHz) 25°C
Rated VR
dv/dt
3600 V/ µs
(HEXFETisthereg.TMforInternationalRectifierPowerMOSFET's)
2
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2
IRF7521D1
Power Mosfet Characteristics
100
10
100
VGS
7.5V
5.0V
4.0V
3.5V
3.0V
2.5V
2.0V
VGS
TOP
TOP
7.5V
5.0V
4.0V
3.5V
3.0V
2.5V
2.0V
10
BOT TOM 1.5V
BOTTOM 1.5V
1
1
1.5V
0.1
0.01
0.1
0.01
1.5V
20µs PULS E W IDTH
TJ = 25°C
20µs P ULSE W IDTH
T
= 150°C
J
A
A
0.1
1
10
0.1
1
10
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
D S
DS
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
100
10
1
2.0
1.5
1.0
0.5
0.0
I
= 1.7A
D
TJ = 150°C
TJ = 25°C
VDS = 10V
20µs PULSE W IDTH
V
= 4.5V
G S
0.1
4.0A
A
1.5
2.0
2.5
3.0
3.5
-60 -40 -20
0
20
40
60
80 100 120 140 160
VG S , Gate-to-Source Voltage (V)
T
J
, Junction Tem perature (°C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
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IRF7521D1
Power Mosfet Characteristics
500
400
10
V
C
C
C
= 0V ,
f = 1M Hz
I
V
= 1.7A
= 16V
G S
iss
D
D S
= C
+ C
+ C
,
C
SHORTED
gs
gd
ds
= C
= C
rss
oss
gd
ds
gd
8
6
4
2
0
C
C
iss
300
200
100
0
oss
C
rss
9
A
A
1
10
100
0
2
4
6
8
10
V
, Drain-to-Source Voltage (V)
Q
, Total Gate Charge (nC)
DS
G
Fig 5. Typical Capacitance Vs.
Fig 6. Typical Gate Charge Vs.
Drain-to-Source Voltage
Gate-to-Source Voltage
100
10
1
100
OPE RATION IN THIS AREA LIM ITE D
BY R DS(on)
10
100µs
1m s
T
= 150°C
J
T
= 25°C
1
J
10m s
T
T
= 25°C
= 150°C
A
J
V
= 0V
G S
1.6
, Source-to-Drain Voltage (V)
S ingle Pulse
A
0.1
0.1
A
0.4
0.6
V
0.8
1.0
1.2
1.4
1.8
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
SD
DS
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
Forward Voltage
4
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IRF7521D1
Power Mosfet Characteristics
1000
100
10
D = 0.50
0.20
0.10
0.05
P
DM
0.02
0.01
t
1
1
t
2
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D =
t / t
1 2
2. Peak T = P
J
x Z
+ T
10
DM
thJC
C
0.1
0.00001
0.0001
0.001
0.01
0.1
1
100
t , Rectangular Pulse Duration (sec)
1
Fig 9. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
0.12
0.10
1.0
0.8
0.6
0.4
0.2
0.0
V
= 2.5V
GS
ID = 1.7A
0.08
0.06
0.04
V
= 5.0V
GS
A
A
0.0
2.0
4.0
6.0
8.0
0.0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
V G S , Gate-to-Source Voltage (V)
I
, Drain Current (A)
D
Fig 10. Typical On-Resistance Vs. Drain
Fig 11. Typical On-Resistance Vs. Gate
Current
Voltage
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5
IRF7521D1
Schottky Diode Characteristics
10
1
TJ = 150°C
TJ = 125°C
Fig. 13 - Typical Values of Reverse
Current Vs. Reverse Voltage
TJ
=
25°C
160
140
120
100
80
V r = 20V
R thJA = 100°C/W
Square wave
D = 3/4
D = 1/2
D =1/3
D = 1/4
D = 1/5
0.1
60
0.0
0.2
0.4
0.6
0.8
1.0
Forward Votage Drop - V( V)
F
40
DC
20
Fig. 12 -Typical Forward Voltage Drop Characteristics
A
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
Average Forw ard C urrent - I
(A)
F(AV)
Fig.14 - Maximum Allowable Ambient
Temp. Vs. Forward Current
6
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IRF7521D1
Micro8TM Package Details
LEAD ASSIGNM ENTS
INCHES
M ILLIMETERS
DIM
D
M IN
M AX
.044
.008
.014
.007
.120
MIN
0.91
0.10
0.25
0.13
2.95
M AX
3
- B
-
6
3
D
D
7
D
6
D
5
D1 D1 D2 D2
A
.036
.004
.010
.005
.116
1.11
0.20
0.36
0.18
3.05
A1
B
8
1
7
6
5
4
8
1
8
1
7
5
4
3
C
D
e
SINGLE
DUAL
H
E
A
0.25 (.010)
M
A
M
-
-
2
3
2
3
4
.0256 BASIC
.0128 BASIC
0.65 BASIC
0.33 BASIC
2
e1
E
S
S
S
G
S1 G 1 S2 G 2
.116
.188
.016
0°
.120
.198
.026
6°
2.95
4.78
0.41
0°
3.05
H
L
5.03
0.66
6°
e
θ
6X
e
1
1
RECOM M ENDED FOOTPRINT
θ
1.04
A
0.38
8X
(
.041 )
8X
( .015
)
- C
B
-
0.10 (.004)
A
C
L
8X
0.08 (.003)
8X
8X
M
C
A
S
B
S
3.20
( .126
4.24
.167 )
( .208
5.28
(
)
)
NOTE S:
1
2
3
DIMENSIONING AND TOLERANCING PER ANSI Y14.5M -1982.
CONTROLLING DIMENSION : INCH.
0.65
( .0256
6X
)
DIMENSIONS DO NOT INCLUDE M OLD FLASH.
Part Marking
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IRF7521D1
Micro8TM Tape & Reel
TERM IN AL N UM BER
1
12 .3 ( .484 )
11 .7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED D IREC TIO N
N O T ES:
1 . O U TL IN E C O N FO R M S T O E IA-4 81 & EIA-541.
2 . C O N TR O LL IN G D IM EN SIO N : M IL LIM ETE R.
330.00
(12.992)
M AX.
14 .40 ( .566 )
12 .40 ( .488 )
NO TES :
1. CO NTR O LLIN G DIM EN SIO N : M ILLIM ETER .
2. O U TLINE C O N FO R M S TO EIA-481 & EIA-541.
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http://www.irf.com/
Data and specifications subject to change without notice . 01/99
8
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