IRF7523D1TR [INFINEON]
Power Field-Effect Transistor, 2.7A I(D), 30V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-8;
| 型号： | IRF7523D1TR |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor, 2.7A I(D), 30V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-8 开关 脉冲 光电二极管 晶体管 |
| 文件： | 总8页 (文件大小：208K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD- 91647C
IRF7523D1
FETKY MOSFET / Schottky Diode
● Co-packaged HEXFET® Power MOSFET
and Schottky Diode
● N-Channel HEXFET
1
8
7
K
K
A
VDSS = 30V
2
A
● Low VF Schottky Rectifier
● Generation 5 Technology
● Micro8 Footprint
R
DS(on) = 0.11Ω
3
4
6
5
S
D
D
TM
G
Schottky Vf = 0.39V
Top View
Description
The FETKYTM family of co-packaged HEXFETs and Schottky diodes offer the
designer an innovative board space saving solution for switching regulator
applications. Generation 5 HEXFETs utilize advanced processing techniques to
achieve extremely low on-resistance per silicon area. Combining this technology
with International Rectifier's low forward drop Schottky rectifiers results in an
extremely efficient device suitable for use in a wide variety of portable electronics
applications like cell phone, PDA, etc.
Micro8TM
ThenewMicro8TM package, withhalfthefootprintareaofthestandardSO-8, provides
the smallest footprint available in an SOIC outline. This makes the Micro8TM an ideal
device for applications where printed circuit board space is at a premium. The low
profile (<1.1mm) of the Micro8TM will allow it to fit easily into extremely thin application
environments such as portable electronics and PCMCIA cards.
Absolute Maximum Ratings (TA = 25°C unless otherwise noted)
Parameter
Maximum
Units
ID @ TA = 25°C
ID @ TA = 70°C
IDM
Continuous Drain Current, VGS@10V➃
2.7
A
2.1
Pulsed Drain Current ➀
Power Dissipation ➃
21
PD @TA = 25°C
PD @TA = 70°C
1.25
0.8
W
Linear Derating Factor
10
W/°C
V
VGS
Gate-to-Source Voltage
± 20
6.2
dv/dt
Peak Diode Recovery dv/dt ➁
Junction and Storage Temperature Range
V/ns
°C
TJ, TSTG
-55 to +150
Thermal Resistance Ratings
Parameter
Maximum
Units
RθJA
Junction-to-Ambient ➃
100
°C/W
Notes:
➀ Repetitive rating; pulse width limited by maximum junction temperature (see figure 11)
➁ ISD ≤ 1.7A, di/dt ≤ 120A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C
➂ Pulse width ≤ 300µs; duty cycle ≤ 2%
➃ When mounted on 1 inch square copper board to approximate typical multi-layer PCB thermal resistance
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1
3/17/99
2
IRF7523D1
MOSFET Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS
RDS(on)
Min. Typ. Max. Units
Conditions
VGS = 0V, ID = 250µA
VGS = 10V, ID = 1.7A
VGS = 4.5V, ID = 0.85A
VDS = VGS, ID = 250µA
VDS = 10V, ID = 0.85A
VDS = 24V, VGS = 0V
VDS = 24V, VGS = 0V, TJ = 125°C
VGS = -20V
Drain-to-Source Breakdown Voltage
Static Drain-to-Source On-Resistance
30
—
—
1.0
1.9
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
V
0.090 0.130
0.140 0.190
Ω
VGS(th)
gfs
Gate Threshold Voltage
—
—
—
—
—
—
7.8
—
—
V
S
Forward Transconductance
Drain-to-Source Leakage Current
IDSS
1.0
25
µA
nA
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
-100
100
12
VGS = 20V
Qg
ID = 1.7A
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
1.2 1.8
2.5 3.8
nC VDS = 24V
VGS = 10V (see figure 6)
➂
4.7
10
—
—
—
—
—
—
—
VDD = 15V
ID = 1.7A
RG = 6.1Ω
RD = 8.7Ω
VGS = 0V
ns
pF
td(off)
tf
Turn-Off Delay Time
Fall Time
12
5.3
210
80
➂
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
VDS = 25V
Reverse Transfer Capacitance
32
ƒ = 1.0MHz (see figure 5)
MOSFET Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units Conditions
IS
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
Body Diode Forward Voltage
—
—
—
—
—
—
—
—
40
48
1.25
21
A
ISM
VSD
trr
1.2
60
V
TJ = 25°C, IS = 1.7A, VGS = 0V
TJ = 25°C, IF = 1.7A
Reverse Recovery Time (Body Diode)
Reverse Recovery Charge
ns
nC
Qrr
72
di/dt = 100A/µs ➂
Schottky Diode Maximum Ratings
Parameter
Max. Units.
Conditions
IF(av)
Max. Average Forward Current
1.9
1.3
120
11
50% Duty Cycle. Rectangular Wave, TA = 25°C
A
Fig.14
TA = 70°C
See
ISM
Max. peak one cycle Non-repetitive
Surge current
5µs sine or 3µs Rect. pulse
Following any rated
10ms sine or 6ms Rect. pulse load condition &
with VRRM applied
A
Schottky Diode Electrical Specifications
Parameter
Max. Units
Conditions
IF = 1.0A, TJ = 25°C
IF = 2.0A, TJ = 25°C
IF = 1.0A, TJ = 125°C
IF = 2.0A, TJ = 125°C .
VR = 30V TJ = 25°C
TJ = 125°C
VFM
Max. Forward voltage drop
0.50
0.62
V
0.39
0.57
IRM
Max. Reverse Leakage current
0.06
mA
16
C
Max. Junction Capacitance
Max. Voltage Rate of Charge
92
pF
VR = 5Vdc ( 100kHz to 1 MHz) 25°C
Rated VR
t
dv/dt
3600 V/ µs
2
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2
IRF7523D1
Power Mosfet Characteristics
100
10
1
100
VGS
VGS
15V
TOP
TOP
15V
10V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 3.0V
BOTTOM 3.0V
10
3.0V
1
3.0V
20µs PULSE W IDTH
20µs PULSE W IDTH
T
J
= 25°C
T
J
= 150°C
A
A
0.1
0.1
0.1
1
10
0.1
1
10
V
, Drain-to-Source Voltage (V)
D S
V
, Drain-to-Source Voltage (V)
DS
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
100
100
TJ = 25°C
10
10
TJ = 150°C
T
= 150°C
J
T
= 25°C
J
1
1
V
DS = 10V
20µs PU LSE W ID TH
6.0A
V
= 0V
G S
0.1
A
0.1
3.0
3.5
4.0
4.5
5.0
5.5
0.4
0.8
1.2
1.6
2.0
V
, Source-to-Drain Voltage (V)
VG S , Gate-to-Source Voltage (V)
SD
Fig 3. Typical Transfer Characteristics
Fig 4. Typical Source-Drain Diode
ForwardVoltage
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3
IRF7523D1
Power Mosfet Characteristics
2.0
I
= 1.7A
D
1.5
1.0
0.5
0.0
V
= 10V
GS
A
-60 -40 -20
0
20
40
60
80
100 120 140 160
T
J
, Junction Tem perature (°C)
Fig 5. Normalized On-Resistance
Fig 6. Typical On-Resistance Vs. Drain
Vs.Temperature
Current
100
OPERATION IN THIS AREA LIM ITED
BY R
DS(on)
10µs
10
100µs
1
1m s
10m s
T
T
= 25°C
= 150°C
A
J
Single Pulse
0.1
A
1
10
100
V
, Drain-to-Source Voltage (V)
DS
Fig 8. Maximum Safe Operating Area
Fig 7. Typical On-Resistance Vs. Gate
Voltage
4
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IRF7523D1
Power Mosfet Characteristics
400
300
200
100
0
20
V
C
C
C
= 0V,
f = 1M Hz
I
= 1.7A
D
GS
iss
= C
= C
= C
+ C
+ C
,
C
SHORTED
gs
gd
ds
gd
ds
V
V
= 24V
= 15V
DS
DS
rss
oss
gd
16
12
8
C
C
iss
oss
C
rss
4
0
A
A
1
10
100
0
2
4
6
8
10
12
V
, Drain-to-Source Voltage (V)
Q
, Total Gate Charge (nC)
DS
G
Fig 9. Typical Capacitance Vs.
Fig 10. Typical Gate Charge Vs.
Drain-to-SourceVoltage
Gate-to-SourceVoltage
1000
100
10
1
D = 0.50
0.20
0.10
0.05
P
DM
0.02
0.01
t
1
t
2
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t / t
1
2
2. Peak T = P
J
x Z
+ T
thJC C
DM
0.1
0.00001
0.0001
0.001
0.01
0.1
1
10
100
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
IRF7523D1
Schottky Diode Characteristics
10
1
TJ = 150°C
TJ = 125°C
Fig. 13 - Typical Values of Reverse
Current Vs. Reverse Voltage
TJ
=
25°C
160
140
120
100
80
V r = 80% Rated
thJA
Square wave
R
= 100°C/W
0.1
0.0
0.2
0.4
0.6
0.8
1.0
D
D
D
D
D
= 3/4
= 1/2
=1/3
= 1/4
= 1/5
60
Forward Voltage Drop - VF (V)
40
DC
20
Fig. 12 -Typical Forward Voltage Drop Characteris-
tics
A
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
Average Forw ard C urrent - I F(AV) (A)
Fig.14 - Maximum Allowable Ambient
Temp. Vs. ForwardCurrent
6
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IRF7523D1
Micro8TM Package Details
LEAD ASSIGNM ENTS
INCHES
M ILLIM ETERS
DIM
D
MIN
M AX
M IN
M AX
3
-
B
-
6
3
D
D
7
D
6
D
5
D1 D1 D2 D2
A
.036
.004
.010
.005
.116
.044
.008
.014
.007
.120
0.91
0.10
0.25
0.13
2.95
1.11
0.20
0.36
0.18
3.05
A1
B
8
1
8
1
7
6
5
4
8
1
7
2
5
4
3
C
D
e
SINGLE
DUAL
H
E
A
0.25 (.010)
M
A
M
-
-
2
3
4
2
3
.0256 BASIC
.0128 BASIC
0.65 BASIC
0.33 BASIC
e1
E
S
S
S
G
S1 G 1 S2 G 2
.116
.188
.016
0°
.120
.198
.026
6°
2.95
4.78
0.41
0°
3.05
H
L
5.03
0.66
6°
e
6X
θ
e
1
1
RECOMM ENDED FOO TPRINT
θ
1.04
A
0.38
8X
( .041
8X
)
(
.015
)
-
C -
0.10 (.004)
A
C
L
B
8X
0.08 (.003)
8X
8X
M
C
A
S
B
S
3.20
.126
4.24
.167
5.28
.208
(
)
(
)
(
)
N O TE S :
1
2
3
D IM E N S IO N IN G A N D T O LE R A N C IN G P E R A N SI Y 14.5M -1982.
C O N T R O LLIN G D IM E N SIO N IN C H .
D IM E N S IO N S D O N O T IN C LU D E M O LD F LAS H .
:
0.65
.0256 )
6X
(
Part Marking
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7
IRF7523D1
Micro8TM Tape & Reel
T ERM IN AL N UM BER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED D IR ECTIO N
NOTES:
1. OUTLIN E CONFOR M S TO EIA-481 & EIA-541.
2. CONTRO LLING DIM ENSION : M ILLIM ETER.
330.00
(12.992)
M AX.
14.40 ( .566 )
12.40 ( .488 )
NO TES :
1. CO NTRO LLING D IMEN SION : MILLIMETER .
2. OU TLINE C ON FO RM S TO EIA-481 & EIA-541.
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Data and specifications subject to change without notice . 3/99
8
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相关型号：
IRF7523D1TRPBF
Power Field-Effect Transistor, 2.7A I(D), 30V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-8
INFINEON
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