IRF7835PBF [INFINEON]

HEXFET Power MOSFET; HEXFET功率MOSFET
IRF7835PBF
型号: IRF7835PBF
厂家: Infineon    Infineon
描述:

HEXFET Power MOSFET
HEXFET功率MOSFET

晶体 晶体管 功率场效应晶体管 开关 脉冲 光电二极管
文件: 总9页 (文件大小:232K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
PD - 97068  
IRF7835PbF  
HEXFET® Power MOSFET  
Applications  
l Synchronous MOSFET for Notebook  
VDSS  
RDS(on) max  
Qg  
Processor Power  
30V 4.5m:@VGS = 10V 22nC  
l Synchronous Rectifier MOSFET for  
Isolated DC-DC Converters in  
Networking Systems  
A
A
D
1
2
3
4
8
7
S
S
S
G
Benefits  
l Very Low Qrr  
l Very Low RDS(on) at 4.5V VGS  
l Ultra-Low Gate Impedance  
l Fully Characterized Avalanche Voltage  
and Current  
D
6
5
D
D
SO-8  
Top View  
l 20V VGS Max. Gate Rating  
l Lead-Free  
Absolute Maximum Ratings  
Parameter  
Drain-to-Source Voltage  
Max.  
30  
Units  
V
VDS  
V
Gate-to-Source Voltage  
± 20  
19  
GS  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
I
I
I
@ TA = 25°C  
D
D
@ TA = 70°C  
15  
A
150  
2.5  
1.6  
DM  
P
P
@TA = 25°C  
@TA = 70°C  
Power Dissipation  
Power Dissipation  
W
D
D
Linear Derating Factor  
Operating Junction and  
0.02  
W/°C  
°C  
T
T
-55 to + 155  
J
Storage Temperature Range  
STG  
Thermal Resistance  
Parameter  
Junction-to-Drain Lead  
Junction-to-Ambient  
Typ.  
–––  
Max.  
20  
Units  
°C/W  
RθJL  
RθJA  
–––  
50  
Notes  through are on page 9  
www.irf.com  
1
1/5/06  
IRF7835PbF  
Static @ TJ = 25°C (unless otherwise specified)  
Parameter  
Min. Typ. Max. Units  
30 ––– –––  
Conditions  
VGS = 0V, ID = 250µA  
BVDSS  
Drain-to-Source Breakdown Voltage  
Breakdown Voltage Temp. Coefficient  
Static Drain-to-Source On-Resistance  
V
∆ΒVDSS/TJ  
RDS(on)  
––– 0.023 ––– V/°C Reference to 25°C, ID = 1mA  
mΩ  
–––  
–––  
1.35  
–––  
–––  
–––  
–––  
–––  
81  
3.6  
4.5  
1.8  
-6.0  
–––  
–––  
–––  
–––  
–––  
22  
4.5  
5.7  
VGS = 10V, ID = 19A  
VGS = 4.5V, ID = 15A  
VDS = VGS, ID = 50µA  
VGS(th)  
VGS(th)  
IDSS  
Gate Threshold Voltage  
2.35  
V
Gate Threshold Voltage Coefficient  
Drain-to-Source Leakage Current  
––– mV/°C  
1.0  
150  
100  
-100  
–––  
33  
µA VDS = 24V, VGS = 0V  
VDS = 24V, VGS = 0V, TJ = 125°C  
IGSS  
Gate-to-Source Forward Leakage  
Gate-to-Source Reverse Leakage  
Forward Transconductance  
Total Gate Charge  
nA  
S
V
GS = 20V  
VGS = -20V  
DS = 15V, ID = 15A  
gfs  
V
Qg  
–––  
–––  
–––  
–––  
–––  
–––  
–––  
–––  
–––  
–––  
–––  
–––  
Qgs1  
Qgs2  
Qgd  
Qgodr  
Qsw  
Qoss  
RG  
Pre-Vth Gate-to-Source Charge  
Post-Vth Gate-to-Source Charge  
Gate-to-Drain Charge  
5.5  
2.1  
7.2  
7.2  
9.3  
14  
–––  
–––  
–––  
–––  
–––  
–––  
1.7  
VDS = 15V  
nC VGS = 4.5V  
ID = 15A  
Gate Charge Overdrive  
See Fig. 16  
Switch Charge (Qgs2 + Qgd  
Output Charge  
)
nC VDS = 16V, VGS = 0V  
Gate Resistance  
Turn-On Delay Time  
Rise Time  
1.0  
9.6  
13  
td(on)  
tr  
td(off)  
tf  
–––  
–––  
–––  
–––  
VDD = 15V, VGS = 4.5V  
I
D = 15A  
Turn-Off Delay Time  
Fall Time  
14  
ns Clamped Inductive Load  
4.6  
Ciss  
Coss  
Crss  
Input Capacitance  
Output Capacitance  
––– 2960 –––  
VGS = 0V  
–––  
–––  
610  
270  
–––  
–––  
pF VDS = 15V  
ƒ = 1.0MHz  
Reverse Transfer Capacitance  
Avalanche Characteristics  
Parameter  
Typ.  
–––  
–––  
Max.  
Units  
mJ  
Single Pulse Avalanche Energy  
Avalanche Current  
EAS  
IAR  
240  
15  
A
Diode Characteristics  
Parameter  
Continuous Source Current  
Min. Typ. Max. Units  
Conditions  
MOSFET symbol  
D
IS  
–––  
–––  
3.1  
(Body Diode)  
A
showing the  
G
ISM  
Pulsed Source Current  
–––  
–––  
150  
integral reverse  
S
(Body Diode)  
p-n junction diode.  
VSD  
trr  
Diode Forward Voltage  
Reverse Recovery Time  
–––  
–––  
–––  
–––  
16  
1.0  
24  
32  
V
T = 25°C, I = 15A, V = 0V  
GS  
J
S
ns T = 25°C, I = 15A, VDD = 15V  
J
F
Qrr  
ton  
2
Reverse Recovery Charge  
Forward Turn-On Time  
21  
nC di/dt = 320A/µs  
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)  
www.irf.com  
IRF7835PbF  
1000  
100  
10  
1000  
100  
10  
VGS  
10V  
VGS  
10V  
TOP  
TOP  
5.0V  
4.5V  
3.5V  
3.0V  
2.7V  
2.5V  
2.3V  
5.0V  
4.5V  
3.5V  
3.0V  
2.7V  
2.5V  
2.3V  
BOTTOM  
BOTTOM  
1
0.1  
0.01  
2.3V  
60µs PULSE WIDTH  
Tj = 25°C  
60µs PULSE WIDTH  
Tj = 150°C  
2.3V  
1
0.1  
1
10  
100  
0.1  
1
10  
100  
V
, Drain-to-Source Voltage (V)  
V
DS  
, Drain-to-Source Voltage (V)  
DS  
Fig 2. Typical Output Characteristics  
Fig 1. Typical Output Characteristics  
2.0  
1.5  
1.0  
0.5  
1000  
I
= 15A  
D
V
= 10V  
GS  
100  
10  
T
= 150°C  
J
1
T
= 25°C  
= 15V  
J
0.1  
0.01  
V
DS  
60µs PULSE WIDTH  
1.0  
2.0  
3.0  
4.0  
5.0  
-60 -40 -20  
T
0
20 40 60 80 100 120 140 160  
V
, Gate-to-Source Voltage (V)  
GS  
, Junction Temperature (°C)  
J
Fig 4. Normalized On-Resistance  
Fig 3. Typical Transfer Characteristics  
Vs. Temperature  
www.irf.com  
3
IRF7835PbF  
100000  
12  
10  
8
V
C
= 0V,  
f = 1 MHZ  
I
= 15A  
GS  
D
= C + C , C SHORTED  
iss  
gs  
gd ds  
V
= 25V  
DS  
C
= C  
rss  
gd  
VDS= 16V  
VDS= 7.6V  
C
= C + C  
ds  
oss  
gd  
10000  
1000  
100  
6
Ciss  
4
Coss  
Crss  
2
0
0
10  
20  
30  
40  
50  
60  
1
10  
100  
Q , Total Gate Charge (nC)  
g
V
, Drain-to-Source Voltage (V)  
DS  
Fig 6. Typical Gate Charge Vs.  
Fig 5. Typical Capacitance Vs.  
Gate-to-Source Voltage  
Drain-to-Source Voltage  
1000  
1000  
100  
10  
OPERATION IN THIS AREA  
LIMITED BY R  
(on)  
DS  
100  
10  
1
100µsec  
1msec  
T
= 150°C  
J
10msec  
1
T
= 25°C  
V
J
100msec  
0.1  
T
= 25°C  
A
Tj = 150°C  
= 0V  
Single Pulse  
GS  
0.01  
0.1  
0.01  
0.1  
1
10  
100  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
V
, Drain-to-Source Voltage (V)  
V
, Source-to-Drain Voltage (V)  
DS  
SD  
Fig 8. Maximum Safe Operating Area  
Fig 7. Typical Source-Drain Diode  
Forward Voltage  
4
www.irf.com  
IRF7835PbF  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
20  
16  
12  
8
I
= 50µA  
D
4
0
-75 -50 -25  
0
25  
50  
75 100 125 150  
25  
50  
75  
100  
125  
150  
T , Temperature ( °C )  
T , CaseTemperature (°C)  
J
C
Fig 9. Maximum Drain Current Vs.  
Fig 10. Threshold Voltage Vs. Temperature  
Case Temperature  
100  
10  
D = 0.50  
0.20  
0.10  
0.05  
1
0.02  
0.01  
R1  
R1  
R2  
R2  
R3  
R3  
Ri (°C/W) τι (sec)  
Cτ 5.599447 0.010553  
27.35936 1.1984  
0.1  
τ
J τJ  
τ
τ
τ
1 τ1  
τ
2 τ2  
3 τ3  
0.01  
0.001  
0.0001  
Ci= τi/Ri  
Ci= τi/Ri  
17.0458  
44.7  
Notes:  
1. Duty Factor D = t1/t2  
2. Peak Tj = P dm x Zthja + Tc  
SINGLE PULSE  
( THERMAL RESPONSE )  
1E-006  
1E-005  
0.0001  
0.001  
0.01  
0.1  
1
10  
100  
t , Rectangular Pulse Duration (sec)  
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient  
www.irf.com  
5
IRF7835PbF  
16  
500  
400  
300  
200  
100  
0
I
= 15A  
I
D
D
TOP  
1.4A  
1.8A  
15A  
12  
8
BOTTOM  
T
T
= 125°C  
= 25°C  
J
4
J
0
2.0  
4.0  
6.0  
8.0  
10.0  
25  
50  
75  
100  
125  
150  
V
, Gate-to-Source Voltage (V)  
GS  
Starting T , Junction Temperature (°C)  
J
Fig 12. On-Resistance vs. Gate Voltage  
Fig 13. Maximum Avalanche Energy  
vs. Drain Current  
V
(BR)DSS  
15V  
t
p
DRIVER  
+
L
V
DS  
D.U.T  
AS  
R
G
V
DD  
-
I
A
V
GS  
0.01Ω  
t
p
I
AS  
Fig 14a. Unclamped Inductive Test Circuit  
Fig 14b. Unclamped Inductive Waveforms  
LD  
VDS  
VDS  
90%  
+
-
VDD  
D.U.T  
10%  
VGS  
VGS  
Pulse Width < 1µs  
Duty Factor < 0.1%  
td(on)  
td(off)  
tr  
tf  
Fig 15a. Switching Time Test Circuit  
Fig 15b. Switching Time Waveforms  
6
www.irf.com  
IRF7835PbF  
Id  
Current Regulator  
Same Type as D.U.T.  
Vds  
Vgs  
50KΩ  
.2µF  
.3µF  
12V  
+
V
DS  
D.U.T.  
-
Vgs(th)  
V
GS  
3mA  
I
I
D
G
Qgs1  
Qgs2  
Qgd  
Qgodr  
Current Sampling Resistors  
Fig 16b. Gate Charge Waveform  
Fig 16a. Gate Charge Test Circuit  
Driver Gate Drive  
P.W.  
Period  
D =  
D.U.T  
Period  
P.W.  
+
*
=10V  
V
GS  
ƒ
Circuit Layout Considerations  
Low Stray Inductance  
Ground Plane  
Low Leakage Inductance  
Current Transformer  
-
D.U.T. I Waveform  
SD  
+
‚
-
Reverse  
Recovery  
Current  
Body Diode Forward  
„
Current  
di/dt  
-
+
D.U.T. V Waveform  
DS  
Diode Recovery  
dv/dt  

V
DD  
VDD  
Re-Applied  
Voltage  
dv/dt controlled by RG  
RG  
+
-
Body Diode  
Forward Drop  
Driver same type as D.U.T.  
ISD controlled by Duty Factor "D"  
D.U.T. - Device Under Test  
Inductor Curent  
I
SD  
Ripple  
5%  
* VGS = 5V for Logic Level Devices  
Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel  
HEXFET® Power MOSFETs  
www.irf.com  
7
IRF7835PbF  
SO-8 Package Details  
INCHES  
MILLIMET ERS  
DIM  
A
D
B
MIN  
.0532  
MAX  
.0688  
.0098  
.020  
MIN  
1.35  
0.10  
0.33  
0.19  
4.80  
3.80  
MAX  
1.75  
0.25  
0.51  
0.25  
5.00  
4.00  
5
A
E
A1 .0040  
b
c
D
E
.013  
8
1
7
2
6
3
5
.0075  
.189  
.0098  
.1968  
.1574  
6
H
0.25 [.010]  
A
.1497  
4
e
.050 BASIC  
1.27 BASIC  
e1 .025 BASIC  
0.635 BASIC  
H
K
L
.2284  
.0099  
.016  
0°  
.2440  
.0196  
.050  
8°  
5.80  
0.25  
0.40  
0°  
6.20  
0.50  
1.27  
8°  
e
6X  
y
e1  
A
K x 45°  
A
C
y
0.10 [.004]  
8X c  
A1  
B
8X L  
8X b  
0.25 [.010]  
7
C
F OOT PRINT  
8X 0.72 [.028]  
NOTES:  
1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994.  
2. CONTROLLING DIMENSION: MILLIMETER  
3. DIME NS IONS ARE S HOWN IN MIL L IME T E RS [INCHE S ].  
4. OUT L INE CONF ORMS T O JE DE C OUT L INE MS -012AA.  
5
6
7
DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.  
MOLD PROTRUSIONS NOT TOEXCEED 0.15 [.006].  
6.46 [.255]  
DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.  
MOLD PROTRUSIONS NOT TOEXCEED 0.25 [.010].  
DIMENSION IS THE LENGTH OF LEAD FOR SOLDERINGTO  
ASUBSTRATE.  
3X 1.27 [.050]  
8X 1.78 [.070]  
SO-8 Part Marking  
EXAMPLE: THIS IS AN IRF7101 (MOSFET)  
DATE CODE (YWW)  
P = DE S IGNAT E S L E AD-F R E E  
PRODUCT (OPTIONAL)  
Y = LAST DIGIT OF THE YEAR  
WW = WEE K  
XXXX  
F7101  
INTERNATIONAL  
RECTIFIER  
LOGO  
A= ASSEMBLY SITE CODE  
LOT CODE  
PART NUMBER  
8
www.irf.com  
IRF7835PbF  
SO-8 Tape and Reel  
TERMINAL NUMBER 1  
12.3 ( .484 )  
11.7 ( .461 )  
8.1 ( .318 )  
7.9 ( .312 )  
FEED DIRECTION  
NOTES:  
1. CONTROLLING DIMENSION : MILLIMETER.  
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).  
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.  
330.00  
(12.992)  
MAX.  
14.40 ( .566 )  
12.40 ( .488 )  
NOTES :  
1. CONTROLLING DIMENSION : MILLIMETER.  
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.  
Notes:  
 Repetitive rating; pulse width limited by max. junction temperature.  
‚ Starting TJ = 25°C, L = 2.1mH, RG = 25, IAS = 15A.  
ƒ Pulse width 400µs; duty cycle 2%.  
„ When mounted on 1 inch square copper board.  
R is measured at TJ of approximately 90°C.  
θ
Data and specifications subject to change without notice.  
This product has been designed and qualified for the Consumer market.  
Qualification Standards can be found on IR’s Web site.  
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105  
TAC Fax: (310) 252-7903  
Visit us at www.irf.com for sales contact information.1/06  
www.irf.com  
9

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