IRF7835PBF [INFINEON]
HEXFET Power MOSFET; HEXFET功率MOSFET型号: | IRF7835PBF |
厂家: | Infineon |
描述: | HEXFET Power MOSFET |
文件: | 总9页 (文件大小:232K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
PD - 97068
IRF7835PbF
HEXFET® Power MOSFET
Applications
l Synchronous MOSFET for Notebook
VDSS
RDS(on) max
Qg
Processor Power
30V 4.5m:@VGS = 10V 22nC
l Synchronous Rectifier MOSFET for
Isolated DC-DC Converters in
Networking Systems
A
A
D
1
2
3
4
8
7
S
S
S
G
Benefits
l Very Low Qrr
l Very Low RDS(on) at 4.5V VGS
l Ultra-Low Gate Impedance
l Fully Characterized Avalanche Voltage
and Current
D
6
5
D
D
SO-8
Top View
l 20V VGS Max. Gate Rating
l Lead-Free
Absolute Maximum Ratings
Parameter
Drain-to-Source Voltage
Max.
30
Units
V
VDS
V
Gate-to-Source Voltage
± 20
19
GS
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
I
I
I
@ TA = 25°C
D
D
@ TA = 70°C
15
A
150
2.5
1.6
DM
P
P
@TA = 25°C
@TA = 70°C
Power Dissipation
Power Dissipation
W
D
D
Linear Derating Factor
Operating Junction and
0.02
W/°C
°C
T
T
-55 to + 155
J
Storage Temperature Range
STG
Thermal Resistance
Parameter
Junction-to-Drain Lead
Junction-to-Ambient
Typ.
–––
Max.
20
Units
°C/W
RθJL
RθJA
–––
50
Notes through ꢀ are on page 9
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1
1/5/06
IRF7835PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
30 ––– –––
Conditions
VGS = 0V, ID = 250µA
BVDSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
V
∆ΒVDSS/∆TJ
RDS(on)
––– 0.023 ––– V/°C Reference to 25°C, ID = 1mA
mΩ
–––
–––
1.35
–––
–––
–––
–––
–––
81
3.6
4.5
1.8
-6.0
–––
–––
–––
–––
–––
22
4.5
5.7
VGS = 10V, ID = 19A
VGS = 4.5V, ID = 15A
VDS = VGS, ID = 50µA
VGS(th)
∆VGS(th)
IDSS
Gate Threshold Voltage
2.35
V
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
––– mV/°C
1.0
150
100
-100
–––
33
µA VDS = 24V, VGS = 0V
VDS = 24V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
nA
S
V
GS = 20V
VGS = -20V
DS = 15V, ID = 15A
gfs
V
Qg
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Qgs1
Qgs2
Qgd
Qgodr
Qsw
Qoss
RG
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
5.5
2.1
7.2
7.2
9.3
14
–––
–––
–––
–––
–––
–––
1.7
VDS = 15V
nC VGS = 4.5V
ID = 15A
Gate Charge Overdrive
See Fig. 16
Switch Charge (Qgs2 + Qgd
Output Charge
)
nC VDS = 16V, VGS = 0V
Ω
Gate Resistance
Turn-On Delay Time
Rise Time
1.0
9.6
13
td(on)
tr
td(off)
tf
–––
–––
–––
–––
VDD = 15V, VGS = 4.5V
I
D = 15A
Turn-Off Delay Time
Fall Time
14
ns Clamped Inductive Load
4.6
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
––– 2960 –––
VGS = 0V
–––
–––
610
270
–––
–––
pF VDS = 15V
ƒ = 1.0MHz
Reverse Transfer Capacitance
Avalanche Characteristics
Parameter
Typ.
–––
–––
Max.
Units
mJ
Single Pulse Avalanche Energy
Avalanche Current
EAS
IAR
240
15
A
Diode Characteristics
Parameter
Continuous Source Current
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
IS
–––
–––
3.1
(Body Diode)
A
showing the
G
ISM
Pulsed Source Current
–––
–––
150
integral reverse
S
(Body Diode)
p-n junction diode.
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
–––
–––
–––
–––
16
1.0
24
32
V
T = 25°C, I = 15A, V = 0V
GS
J
S
ns T = 25°C, I = 15A, VDD = 15V
J
F
Qrr
ton
2
Reverse Recovery Charge
Forward Turn-On Time
21
nC di/dt = 320A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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IRF7835PbF
1000
100
10
1000
100
10
VGS
10V
VGS
10V
TOP
TOP
5.0V
4.5V
3.5V
3.0V
2.7V
2.5V
2.3V
5.0V
4.5V
3.5V
3.0V
2.7V
2.5V
2.3V
BOTTOM
BOTTOM
1
0.1
0.01
2.3V
≤ 60µs PULSE WIDTH
Tj = 25°C
≤ 60µs PULSE WIDTH
Tj = 150°C
2.3V
1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
DS
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
2.0
1.5
1.0
0.5
1000
I
= 15A
D
V
= 10V
GS
100
10
T
= 150°C
J
1
T
= 25°C
= 15V
J
0.1
0.01
V
DS
≤ 60µs PULSE WIDTH
1.0
2.0
3.0
4.0
5.0
-60 -40 -20
T
0
20 40 60 80 100 120 140 160
V
, Gate-to-Source Voltage (V)
GS
, Junction Temperature (°C)
J
Fig 4. Normalized On-Resistance
Fig 3. Typical Transfer Characteristics
Vs. Temperature
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3
IRF7835PbF
100000
12
10
8
V
C
= 0V,
f = 1 MHZ
I
= 15A
GS
D
= C + C , C SHORTED
iss
gs
gd ds
V
= 25V
DS
C
= C
rss
gd
VDS= 16V
VDS= 7.6V
C
= C + C
ds
oss
gd
10000
1000
100
6
Ciss
4
Coss
Crss
2
0
0
10
20
30
40
50
60
1
10
100
Q , Total Gate Charge (nC)
g
V
, Drain-to-Source Voltage (V)
DS
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
1000
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
100
10
1
100µsec
1msec
T
= 150°C
J
10msec
1
T
= 25°C
V
J
100msec
0.1
T
= 25°C
A
Tj = 150°C
= 0V
Single Pulse
GS
0.01
0.1
0.01
0.1
1
10
100
0.2
0.4
0.6
0.8
1.0
1.2
V
, Drain-to-Source Voltage (V)
V
, Source-to-Drain Voltage (V)
DS
SD
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
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IRF7835PbF
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
20
16
12
8
I
= 50µA
D
4
0
-75 -50 -25
0
25
50
75 100 125 150
25
50
75
100
125
150
T , Temperature ( °C )
T , CaseTemperature (°C)
J
C
Fig 9. Maximum Drain Current Vs.
Fig 10. Threshold Voltage Vs. Temperature
Case Temperature
100
10
D = 0.50
0.20
0.10
0.05
1
0.02
0.01
R1
R1
R2
R2
R3
R3
Ri (°C/W) τι (sec)
Cτ 5.599447 0.010553
27.35936 1.1984
0.1
τ
J τJ
τ
τ
τ
1 τ1
τ
2 τ2
3 τ3
0.01
0.001
0.0001
Ci= τi/Ri
Ci= τi/Ri
17.0458
44.7
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
SINGLE PULSE
( THERMAL RESPONSE )
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
100
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
IRF7835PbF
16
500
400
300
200
100
0
I
= 15A
I
D
D
TOP
1.4A
1.8A
15A
12
8
BOTTOM
T
T
= 125°C
= 25°C
J
4
J
0
2.0
4.0
6.0
8.0
10.0
25
50
75
100
125
150
V
, Gate-to-Source Voltage (V)
GS
Starting T , Junction Temperature (°C)
J
Fig 12. On-Resistance vs. Gate Voltage
Fig 13. Maximum Avalanche Energy
vs. Drain Current
V
(BR)DSS
15V
t
p
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
DD
-
I
A
V
GS
0.01Ω
t
p
I
AS
Fig 14a. Unclamped Inductive Test Circuit
Fig 14b. Unclamped Inductive Waveforms
LD
VDS
VDS
90%
+
-
VDD
D.U.T
10%
VGS
VGS
Pulse Width < 1µs
Duty Factor < 0.1%
td(on)
td(off)
tr
tf
Fig 15a. Switching Time Test Circuit
Fig 15b. Switching Time Waveforms
6
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IRF7835PbF
Id
Current Regulator
Same Type as D.U.T.
Vds
Vgs
50KΩ
.2µF
.3µF
12V
+
V
DS
D.U.T.
-
Vgs(th)
V
GS
3mA
I
I
D
G
Qgs1
Qgs2
Qgd
Qgodr
Current Sampling Resistors
Fig 16b. Gate Charge Waveform
Fig 16a. Gate Charge Test Circuit
Driver Gate Drive
P.W.
Period
D =
D.U.T
Period
P.W.
+
*
=10V
V
GS
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
D.U.T. I Waveform
SD
+
-
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
-
+
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
VDD
Re-Applied
Voltage
• dv/dt controlled by RG
RG
+
-
Body Diode
Forward Drop
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
Inductor Curent
I
SD
Ripple
≤ 5%
* VGS = 5V for Logic Level Devices
Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
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7
IRF7835PbF
SO-8 Package Details
INCHES
MILLIMET ERS
DIM
A
D
B
MIN
.0532
MAX
.0688
.0098
.020
MIN
1.35
0.10
0.33
0.19
4.80
3.80
MAX
1.75
0.25
0.51
0.25
5.00
4.00
5
A
E
A1 .0040
b
c
D
E
.013
8
1
7
2
6
3
5
.0075
.189
.0098
.1968
.1574
6
H
0.25 [.010]
A
.1497
4
e
.050 BASIC
1.27 BASIC
e1 .025 BASIC
0.635 BASIC
H
K
L
.2284
.0099
.016
0°
.2440
.0196
.050
8°
5.80
0.25
0.40
0°
6.20
0.50
1.27
8°
e
6X
y
e1
A
K x 45°
A
C
y
0.10 [.004]
8X c
A1
B
8X L
8X b
0.25 [.010]
7
C
F OOT PRINT
8X 0.72 [.028]
NOTES:
1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994.
2. CONTROLLING DIMENSION: MILLIMETER
3. DIME NS IONS ARE S HOWN IN MIL L IME T E RS [INCHE S ].
4. OUT L INE CONF ORMS T O JE DE C OUT L INE MS -012AA.
5
6
7
DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.
MOLD PROTRUSIONS NOT TOEXCEED 0.15 [.006].
6.46 [.255]
DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.
MOLD PROTRUSIONS NOT TOEXCEED 0.25 [.010].
DIMENSION IS THE LENGTH OF LEAD FOR SOLDERINGTO
ASUBSTRATE.
3X 1.27 [.050]
8X 1.78 [.070]
SO-8 Part Marking
EXAMPLE: THIS IS AN IRF7101 (MOSFET)
DATE CODE (YWW)
P = DE S IGNAT E S L E AD-F R E E
PRODUCT (OPTIONAL)
Y = LAST DIGIT OF THE YEAR
WW = WEE K
XXXX
F7101
INTERNATIONAL
RECTIFIER
LOGO
A= ASSEMBLY SITE CODE
LOT CODE
PART NUMBER
8
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IRF7835PbF
SO-8 Tape and Reel
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 2.1mH, RG = 25Ω, IAS = 15A.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
When mounted on 1 inch square copper board.
ꢀ R is measured at TJ of approximately 90°C.
θ
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.1/06
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9
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