IRF7910 [INFINEON]
HEXFET Power MOSFET; HEXFET功率MOSFET
| 型号： | IRF7910 |
| 厂家： | 
Infineon |
| 描述： | HEXFET Power MOSFET |
| 文件： | 总8页 (文件大小：124K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 94419
IRF7910
HEXFET® Power MOSFET
VDSS
RDS(on) max
ID
Applications
12V
15mΩ @VGS = 4.5V
10A
l High Frequency 3.3V and 5V input Point-
of-Load Synchronous Buck Converters for
Netcom and Computing Applications
l Power Management for Netcom,
Computing and Portable Applications
1
2
3
4
8
S1
G1
D1
7
D1
Benefits
l Ultra-Low Gate Impedance
l Very Low RDS(on)
6
S2
D2
5
G2
D2
l Fully Characterized Avalanche Voltage
and Current
SO-8
Top View
Absolute Maximum Ratings
Symbol
Parameter
Max.
Units
VDS
Drain-Source Voltage
12
V
VGS
Gate-to-Source Voltage
± 12
V
ID @ TA = 25°C
ID @ TA = 70°C
IDM
Continuous Drain Current, VGS @ 4.5V
Continuous Drain Current, VGS @ 4.5V
Pulsed Drain Current
10
7.9
A
79
PD @TA = 25°C
PD @TA = 70°C
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
2.0
1.3
W
W
16
mW/°C
°C
TJ , TSTG
Junction and Storage Temperature Range
-55 to + 150
Thermal Resistance
Symbol
Parameter
Typ.
–––
Max.
20
Units
RθJL
RθJA
Junction-to-Drain Lead
Junction-to-Ambient
°C/W
–––
62.5
Notes through are on page 8
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1
4/29/02
IRF7910
Static @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
12 ––– –––
Conditions
VGS = 0V, ID = 250µA
V(BR)DSS
Drain-to-Source Breakdown Voltage
V
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.01 ––– V/°C Reference to 25°C, ID = 1mA
––– 11.5 15
––– 20 50
0.6 ––– 2.0
––– ––– 100
––– ––– 250
––– ––– 200
––– ––– -200
VGS = 4.5V, ID = 8.0A
VGS = 2.8V, ID = 5.0A
VDS = VGS, ID = 250µA
VDS = 9.6V, VGS = 0V
RDS(on)
Static Drain-to-Source On-Resistance
mΩ
VGS(th)
IDSS
Gate Threshold Voltage
V
Drain-to-Source Leakage Current
µA
VDS = 9.6V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
VGS = 12V
IGSS
nA
VGS = -12V
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
gfs
Parameter
Forward Transconductance
Total Gate Charge
Min. Typ. Max. Units
Conditions
18 ––– –––
––– 17 26
S
VDS = 6.0V, ID = 8.0A
ID = 8.0A
Qg
Qgs
Qgd
Qoss
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Output Gate Charge
Turn-On Delay Time
Rise Time
––– 4.4 ––– nC VDS = 6.0V
––– 5.2 –––
––– 16 –––
––– 9.4 –––
––– 22 –––
––– 16 –––
––– 6.3 –––
––– 1730 –––
––– 1340 –––
––– 330 –––
VGS = 4.5V
VGS = 0V, VDS = 10V
VDD = 6.0V
ID = 8.0A
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
RG = 1.8Ω
VGS = 4.5V
VGS = 0V
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS = 6.0V
pF ƒ = 1.0MHz
Avalanche Characteristics
Symbol
EAS
Parameter
Single Pulse Avalanche Energy
Avalanche Current
Typ.
–––
Max.
100
Units
mJ
IAR
–––
8.0
A
Diode Characteristics
Symbol
IS
Parameter
Min. Typ. Max. Units
Conditions
D
Continuous Source Current
(Body Diode)
MOSFET symbol
1.8
––– –––
––– –––
showing the
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
p-n junction diode.
79
S
––– 0.85 1.3
––– 0.70 –––
––– 50 75
––– 60 90
––– 51 77
––– 60 90
V
TJ = 25°C, IS = 8.0A, VGS = 0V
VSD
Diode Forward Voltage
TJ = 125°C, IS = 8.0A, VGS = 0V
trr
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Time
Reverse Recovery Charge
ns TJ = 25°C, IF = 8.0A, VR =12V
nC di/dt = 100A/µs
ns TJ = 125°C, IF = 8.0A, VR =12V
nC di/dt = 100A/µs
Qrr
trr
Qrr
2
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IRF7910
1000
100
10
1000
100
10
VGS
VGS
TOP
10V
8.0V
5.0V
4.5V
3.5V
2.7V
2.0V
TOP
10V
8.0V
5.0V
4.5V
3.5V
2.7V
2.0V
BOTTOM 1.5V
BOTTOM 1.5V
1
1.5V
1.5V
1
0.1
0.01
20µs PULSE WIDTH
Tj = 150°C
20µs PULSE WIDTH
Tj = 25°C
0.1
0.1
1
10
0.1
1
10
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.0
100
10A
=
I
D
1.5
1.0
0.5
0.0
T
= 150°C
J
10
T
= 25°C
J
V
= 10V
DS
20µs PULSE WIDTH
V
= 4.5V
GS
1
-60 -40 -20
0
20
40
60
80 100 120 140 160
1.0
2.0
3.0
4.0
V
, Gate-to-Source Voltage (V)
TJ, Junction Temperature (°C)
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
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3
IRF7910
10000
V
12
10
8
= 0V,
f = 1 MHZ
GS
I
= 8.0A
D
C
= C + C , C SHORTED
V
V
= 9.6V
= 6.0V
iss
gs gd ds
DS
DS
C
= C
rss
gd
C
= C + C
oss
ds
gd
Ciss
Coss
6
1000
4
Crss
2
FOR TEST CIRCUIT
SEE FIGURE 13
0
100
0
10
G
20
30
40
1
10
100
Q
Total Gate Charge (nC)
V
, Drain-to-Source Voltage (V)
DS
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
100.0
10.0
1.0
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
T
= 150°C
J
100µsec
T
= 25°C
J
1msec
Tc = 25°C
Tj = 150°C
Single Pulse
10msec
V
= 0V
GS
1
0.1
0
1
10
100
0.0
0.5
1.0
1.5
2.0
V
, Drain-toSource Voltage (V)
V
, Source-toDrain Voltage (V)
DS
SD
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
Forward Voltage
4
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IRF7910
10.0
8.0
6.0
4.0
2.0
0.0
RD
VDS
VGS
D.U.T.
RG
+VDD
-
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
25
50
75
100
125
150
TC, Case Temperature (°C)
10%
V
GS
Fig 9. Maximum Drain Current Vs.
t
t
r
t
t
f
d(on)
d(off)
Ambient Temperature
Fig 10b. Switching Time Waveforms
100
10
1
D = 0.50
0.20
0.10
0.05
P
0.02
0.01
DM
t
1
t
2
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D =
t
/ t
1
2
2. Peak T
= P
x
Z
+ T
10
J
DM
thJA
A
0.1
0.00001
0.0001
0.001
0.01
0.1
1
100
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
IRF7910
0.0145
0.0140
0.0135
0.020
0.018
0.015
0.013
0.010
I
= 8.0A
V
= 4.5V
D
0.0130
0.0125
0.0120
GS
2.5
3.5
4.5
5.5
0
20
40
60
80
100
V
Gate -to -Source Voltage (V)
I
, Drain Current (A)
GS,
D
Fig 12. On-Resistance Vs. Drain Current
Fig 13. On-Resistance Vs. Gate Voltage
Current Regulator
Same Type as D.U.T.
Q
G
50KΩ
.3µF
VGS
.2µF
12V
Q
Q
GD
GS
+
250
V
DS
D.U.T.
-
I
V
D
G
TOP
3.6A
6.4A
8.0A
V
GS
3mA
Charge
200
150
100
50
BOTTOM
I
I
D
G
Current Sampling Resistors
Fig 14a&b. Basic Gate Charge Test Circuit
and Waveform
15V
V
(BR)DSS
DRIVER
+
L
t
p
V
DS
D.U.T
AS
R
G
0
V
DD
-
25
50
75
100
125
150
I
A
20V
°
( C)
Ω
0.01
Starting T , Junction Temperature
t
p
J
I
AS
Fig 15c. Maximum Avalanche Energy
Fig 15a&b. Unclamped Inductive Test circuit
Vs. Drain Current
and Waveforms
6
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IRF7910
SO-8 Package Details
INCHES
MIL LI ME T E R S
DIM
A
D
B
MIN
.0532
MAX
.0688
.0098
.020
MIN
1.35
0.10
0.33
0.19
4.80
3.80
MAX
1.75
0.25
0.51
0.25
5.00
4.00
5
A
A1 .0040
b
c
.013
8
7
6
5
.0075
.189
.0098
.1968
.1574
6
H
D
E
e
E
0.25 [.010]
A
.1497
1
2
3
4
.050 BASIC
1.27 BASIC
0.635 BASIC
e 1 .025 BASIC
H
K
L
y
.2284
.0099
.016
0°
.2440
.0196
.050
8°
5.80
0.25
0.40
0°
6.20
0.50
1.27
8°
e
6X
e1
K x 45°
A
C
y
0.10 [.004]
8X c
A1
B
8X L
8X b
0.25 [.010]
7
C
A
F OOT PR INT
8X 0.72 [.028]
NOTES:
1. DIMENSIONING &TOLERANCING PER ASME Y14.5M-1994.
2. CONTROLLING DIMENSION: MILLIMETER
3. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].
4. OUT L INE CONF ORMS T O JE DE C OUT L INE MS -012AA.
5
6
7
DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.
MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006].
6.46 [.255]
DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.
MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010].
DIMENSION IS THE LENGTH OF LEAD FOR SOLDERING TO
ASUBSTRATE.
3X 1.27 [.050]
8X 1.78 [.070]
SO-8 Part Marking
EXAMPLE: THIS IS AN IRF710
1 (MOSFET)
DATE CODE (YWW)
Y = LAST DIGIT OF
WW = WEEK
THE YEAR
YWW
XXXX
LOT CODE
INTERNATIONAL
RECTIFIER
LOGO
F7101
PART NUMBER
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7
IRF7910
SO-8 Tape and Reel
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Notes:
Repetitive rating; pulse width limited by
Pulse width ≤ 300µs; duty cycle ≤ 2%.
max. junction temperature.
When mounted on 1 inch square copper board, t<10 sec
Starting TJ = 25°C, L = 3.2mH
RG = 25Ω, IAS = 8.0A.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.4/02
8
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INFINEON
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