IRFB3507 [INFINEON]
HEXFET Power MOSFET; HEXFET功率MOSFET
| 型号： | IRFB3507 |
| 厂家： | 
Infineon |
| 描述： | HEXFET Power MOSFET |
| 文件： | 总11页 (文件大小：414K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 96903A
IRFB3507
IRFS3507
IRFSL3507
HEXFET® Power MOSFET
Applications
l High Efficiency Synchronous Rectification in SMPS
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency Circuits
D
S
VDSS
RDS(on) typ.
max.
75V
7.0m
8.8m
:
:
G
Benefits
ID
97A
l Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
l Fully Characterized Capacitance and Avalanche
SOA
l Enhanced body diode dV/dt and dI/dt Capability
G D S
G D S
G D S
D2Pak
IRFS3507
TO-262
IRFSL3507
TO-220AB
IRFB3507
Absolute Maximum Ratings
Symbol
ID @ TC = 25°C
ID @ TC = 100°C
IDM
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current d
Max.
97c
Units
A
69c
390
PD @TC = 25°C
190
W
Maximum Power Dissipation
Linear Derating Factor
1.3
W/°C
V
VGS
± 20
Gate-to-Source Voltage
5.0
Peak Diode Recovery f
dv/dt
TJ
V/ns
°C
-55 to + 175
Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
300
10lbxin (1.1Nxm)
Mounting torque, 6-32 or M3 screw
Avalanche Characteristics
Single Pulse Avalanche Energy e
EAS (Thermally limited)
280
mJ
A
Avalanche Currentꢀc
IAR
See Fig. 14, 15, 16a, 16b
Repetitive Avalanche Energy g
EAR
mJ
Thermal Resistance
Symbol
Parameter
Typ.
–––
Max.
0.77
–––
62
Units
RθJC
Junction-to-Case k
RθCS
RθJA
RθJA
0.50
–––
°C/W
Case-to-Sink, Flat Greased Surface , TO-220
Junction-to-Ambient, TO-220 k
2
–––
40
Junction-to-Ambient (PCB Mount) , D Pak
jk
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1
11/04/04
IRFB3507/IRFS3507/IRFSL3507
Static @ TJ = 25°C (unless otherwise specified)
Symbol
V(BR)DSS
Parameter
Min. Typ. Max. Units
75 ––– –––
––– 0.070 ––– V/°C Reference to 25°C, ID = 1mAd
Conditions
VGS = 0V, ID = 250µA
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
V
∆V(BR)DSS/∆TJ
RDS(on)
–––
2.0
7.0
8.8
4.0
20
VGS = 10V, ID = 58A g
mΩ
V
VGS(th)
–––
VDS = VGS, ID = 100µA
IDSS
Drain-to-Source Leakage Current
––– –––
µA
VDS = 75V, VGS = 0V
––– ––– 250
––– ––– 200
––– ––– -200
V
DS = 75V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Gate Input Resistance
nA VGS = 20V
GS = -20V
f = 1MHz, open drain
V
RG
–––
1.3
–––
Ω
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
gfs
Qg
Parameter
Forward Transconductance
Total Gate Charge
Min. Typ. Max. Units
Conditions
VDS = 50V, ID = 58A
86
––– –––
S
–––
–––
–––
–––
–––
–––
–––
88
24
36
20
81
52
49
130
–––
–––
–––
–––
–––
–––
nC ID = 58A
VDS = 60V
VGS = 10V g
ns VDD = 48V
ID = 58A
Qgs
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Qgd
td(on)
tr
td(off)
Turn-Off Delay Time
Fall Time
RG = 5.6Ω
VGS = 10V g
tf
Ciss
Input Capacitance
––– 3540 –––
––– 340 –––
––– 210 –––
––– 460 –––
––– 520 –––
pF VGS = 0V
Coss
Output Capacitance
Reverse Transfer Capacitance
VDS = 50V
Crss
ƒ = 1.0MHz
Coss eff. (ER)
V
GS = 0V, VDS = 0V to 60V i, See Fig.11
GS = 0V, VDS = 0V to 60V h, See Fig. 5
Effective Output Capacitance (Energy Related)
Coss eff. (TR)
V
Effective Output Capacitance (Time Related)
h
Diode Characteristics
Symbol
Parameter
Min. Typ. Max. Units
Conditions
D
IS
Continuous Source Current
––– –––
A
MOSFET symbol
97
c
(Body Diode)
Pulsed Source Current
(Body Diode)ꢀd
showing the
integral reverse
G
ISM
––– ––– 390
A
S
p-n junction diode.
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
––– –––
1.3
56
V
TJ = 25°C, IS = 58A, VGS = 0V g
TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
TJ = 25°C
VR = 64V,
–––
–––
–––
–––
–––
37
45
32
51
1.7
ns
IF = 58A
di/dt = 100A/µs g
68
Qrr
Reverse Recovery Charge
48
nC
77
IRRM
ton
Reverse Recovery Current
Forward Turn-On Time
–––
A
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Calculated continuous current based on maximum allowable junction
temperature. Package limitation current is 75A.
Repetitive rating; pulse width limited by max. junction
temperature.
Limited by TJmax, starting TJ = 25°C, L = 0.17mH,
RG = 25Ω, IAS = 58A, VGS =10V. Part not recommended for use
above this value.
Coss eff. (TR) is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS
Coss eff. (ER) is a fixed capacitance that gives the same energy as
Coss while VDS is rising from 0 to 80% VDSS
.
.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recom
mended footprint and soldering techniques refer to application note #AN-994.
Rθ is measured at TJ approximately 90°C.
ISD ≤ 58A, di/dt ≤ 390A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C.
ꢁ Pulse width ≤ 400µs; duty cycle ≤ 2%.
2
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IRFB3507/IRFS3507/IRFSL3507
1000
100
10
1000
VGS
15V
10V
8.0V
6.0V
5.5V
5.0V
4.8V
4.5V
VGS
15V
10V
8.0V
6.0V
5.5V
5.0V
4.8V
4.5V
TOP
TOP
100
10
1
BOTTOM
BOTTOM
4.5V
4.5V
1
60µs PULSE WIDTH
≤
60µs PULSE WIDTH
≤
Tj = 25°C
Tj = 175°C
0.1
0.1
1
10
100
1000
0.1
1
10
100
1000
V
, Drain-to-Source Voltage (V)
DS
V
, Drain-to-Source Voltage (V)
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
100
10
2.5
2.0
1.5
1.0
0.5
I
= 97A
D
V
= 10V
GS
T
= 175°C
J
T
= 25°C
J
1
V
= 25V
DS
≤
60µs PULSE WIDTH
0.1
2
4
6
8
10
-60 -40 -20
T
0
20 40 60 80 100120140160180
, Junction Temperature (°C)
J
V
, Gate-to-Source Voltage (V)
GS
Fig 4. Normalized On-Resistance vs. Temperature
Fig 3. Typical Transfer Characteristics
100000
10000
1000
12.0
V
= 0V,
= C
f = 1 MHZ
GS
I = 58A
D
C
C
C
+ C , C
SHORTED
iss
gs
gd
ds
V
V
V
= 60V
= 38V
= 15V
DS
DS
DS
= C
10.0
8.0
6.0
4.0
2.0
0.0
rss
oss
gd
= C + C
ds
gd
C
iss
C
oss
C
rss
100
1
10
, Drain-to-Source Voltage (V)
100
0
20
40
60
80
100
V
Q
Total Gate Charge (nC)
DS
G
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
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3
IRFB3507/IRFS3507/IRFSL3507
1000
10000
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R (on)
DS
100
10
1
T
= 175°C
100µsec
1msec
J
10msec
DC
T
= 25°C
J
1
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
V
= 0V
GS
0.1
0.01
0.0
0.4
0.8
1.2
1.6
2.0
1
10
100
1000
V
, Source-to-Drain Voltage (V)
V
, Drain-to-Source Voltage (V)
SD
DS
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode Forward Voltage
95
90
85
80
75
70
100
Limited By Package
80
60
40
20
0
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
, Temperature ( °C )
25
50
75
100
125
150
175
T
, Case Temperature (°C)
T
C
J
Fig 10. Drain-to-Source Breakdown Voltage
Fig 9. Maximum Drain Current vs. Case Temperature
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
1200
I
D
TOP
8.9A
12A
BOTTOM 58A
1000
800
600
400
200
0
0
10 20 30 40 50 60 70 80
Drain-to-Source Voltage (V)
25
50
75
100
125
150
175
Starting T , Junction Temperature (°C)
J
V
DS,
Fig 12. Maximum Avalanche Energy vs. DrainCurrent
Fig 11. Typical COSS Stored Energy
4
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IRFB3507/IRFS3507/IRFSL3507
10
1
D = 0.50
0.20
0.10
0.05
0.1
R1
R1
R2
R2
Ri (°C/W) τi (sec)
0.2963 0.000504
τ
J τJ
τ
τ
Cτ
0.02
0.01
1τ1
Ci= τi/Ri
τ
2τ2
0.01
0.001
0.0001
0.4738 0.013890
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t
, Rectangular Pulse Duration (sec)
1
Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case
1000
100
10
Duty Cycle = Single Pulse
Allowed avalanche Current vs
avalanche pulsewidth, tav
0.01
∆
assuming
Tj = 25°C due to
avalanche losses
0.05
0.10
1
0.1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 14. Typical Avalanche Current vs.Pulsewidth
300
250
200
150
100
50
Notes on Repetitive Avalanche Curves , Figures 14, 15:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of Tjmax. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures 16a, 16b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
6. Iav = Allowable avalanche current.
7. ∆T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as
25°C in Figure 14, 15).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
TOP
BOTTOM 1% Duty Cycle
= 58A
Single Pulse
I
D
ZthJC(D, tav) = Transient thermal resistance, see Figures 13)
0
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
25
50
75
100
125
150
175
Iav = 2DT/ [1.3·BV·Zth]
Starting T , Junction Temperature (°C)
EAS (AR) = PD (ave)·tav
J
Fig 15. Maximum Avalanche Energy vs. Temperature
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5
IRFB3507/IRFS3507/IRFSL3507
4.5
4.0
3.5
3.0
14
12
10
8
I
I
I
I
= 100µA
= 250µA
= 1.0mA
= 1.0A
D
D
D
D
2.5
2.0
1.5
1.0
6
4
I
= 19A
= 64V
F
V
R
T
= 25°C _____
= 125°C ----------
2
J
T
J
0
-75 -50 -25
0
25 50 75 100 125 150 175 200
, Temperature ( °C )
100 200 300 400 500 600 700 800 900 1000
T
J
di /dt (A/µs)
f
Fig. 17 - Typical Recovery Current vs. dif/dt
Fig 16. Threshold Voltage vs. Temperature
14
350
300
250
200
150
100
50
12
10
8
6
4
I
= 19A
= 64V
I
= 39A
= 64V
F
F
V
T
V
R
R
= 25°C _____
= 125°C ----------
T
= 25°C _____
= 125°C ----------
2
J
J
T
T
J
J
0
0
100 200 300 400 500 600 700 800 900 1000
100 200 300 400 500 600 700 800 900 1000
di /dt (A/µs)
f
di /dt (A/µs)
f
Fig. 18 - Typical Recovery Current vs. dif/dt
Fig. 19 - Typical Stored Charge vs. dif/dt
300
250
200
150
100
50
I
= 39A
= 64V
F
V
T
R
= 25°C _____
= 125°C ----------
J
T
J
0
100 200 300 400 500 600 700 800 900 1000
di /dt (A/µs)
f
Fig. 20 - Typical Stored Charge vs. dif/dt
6
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IRFB3507/IRFS3507/IRFSL3507
Driver Gate Drive
P.W.
Period
Period
D =
D.U.T
P.W.
+
*
=10V
V
GS
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
D.U.T. I Waveform
SD
+
-
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
-
+
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
VDD
Re-Applied
Voltage
• dv/dt controlled by RG
RG
+
-
Body Diode
Forward Drop
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
Inductor Current
I
SD
Ripple
≤ 5%
* VGS = 5V for Logic Level Devices
Fig 20. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
V
(BR)DSS
15V
t
p
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
DD
-
I
A
V
2
GS
0.01Ω
t
p
I
AS
Fig 21b. Unclamped Inductive Waveforms
Fig 21a. Unclamped Inductive Test Circuit
LD
VDS
VDS
90%
+
-
VDD
10%
VGS
D.U.T
VGS
Pulse Width < 1µs
Duty Factor < 0.1%
td(on)
td(off)
tr
tf
Fig 22a. Switching Time Test Circuit
Fig 22b. Switching Time Waveforms
Id
Vds
Vgs
L
VCC
DUT
Vgs(th)
0
1K
Qgs1
Qgs2
Qgd
Qgodr
Fig 23a. Gate Charge Test Circuit
Fig 23b. Gate Charge Waveform
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7
IRFB3507/IRFS3507/IRFSL3507
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
10.54 (.415)
10.29 (.405)
- B -
3.78 (.149)
3.54 (.139)
2.87 (.113)
2.62 (.103)
4.69 (.185)
4.20 (.165)
1.32 (.052)
1.22 (.048)
- A -
6.47 (.255)
6.10 (.240)
4
15.24 (.600)
14.84 (.584)
1.15 (.045)
MIN
LEAD ASSIGNMENTS
1 - GATE
1
2
3
2 - DRAIN
3 - SOURCE
4 - DRAIN
14.09 (.555)
13.47 (.530)
4.06 (.160)
3.55 (.140)
0.93 (.037)
0.69 (.027)
0.55 (.022)
0.46 (.018)
3X
3X
1.40 (.055)
3X
1.15 (.045)
0.36 (.014)
M
B A M
2.92 (.115)
2.64 (.104)
2.54 (.100)
2X
NOTES:
1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.
2 CONTROLLING DIMENSION : INCH
3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB.
4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS.
TO-220AB Part Marking Information
Note: "P" in assembly line
position indicates "Lead-Free"
TO-220AB packages are not recommended for Surface Mount Application.
8
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IRFB3507/IRFS3507/IRFSL3507
TO-262 Package Outline (Dimensions are shown in millimeters (inches))
IGBT
1- GATE
2- COLLECTOR
3- EMITTER
4- COLLECTOR
TO-262 Part Marking Information
OR
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9
IRFB3507/IRFS3507/IRFSL3507
D2Pak Package Outline (Dimensions are shown in millimeters (inches))
D2Pak Part Marking Information
OR
10
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IRFB3507/IRFS3507/IRFSL3507
D2Pak Tape & Reel Information
TRR
1.60 (.063)
1.50 (.059)
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
0.368 (.0145)
0.342 (.0135)
FEED DIRECTION
TRL
11.60 (.457)
11.40 (.449)
1.85 (.073)
1.65 (.065)
24.30 (.957)
23.90 (.941)
15.42 (.609)
15.22 (.601)
1.75 (.069)
1.25 (.049)
10.90 (.429)
10.70 (.421)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
60.00 (2.362)
MIN.
30.40 (1.197)
MAX.
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
26.40 (1.039)
24.40 (.961)
4
3
Data and specifications subject to change without notice.
This product has been designed and qualified for the Automotive [Q101] market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 11/04
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11
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