IRFH5020TRPBF [INFINEON]
HEXFET Power MOSFET; HEXFET功率MOSFET
| 型号： | IRFH5020TRPBF |
| 厂家： | 
Infineon |
| 描述： | HEXFET Power MOSFET |
| 文件： | 总8页 (文件大小：340K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD -97428
IRFH5020PbF
HEXFET® Power MOSFET
VDS
200
55
V
RDS(on) max
(@VGS = 10V)
Qg (typical)
m
36
1.9
nC
RG (typical)
ID
43
A
PQFN 5X6 mm
(@Tc(Bottom) = 25°C)
Applications
• Secondary Side Synchronous Rectification
• Inverters for DC Motors
• DC-DC Brick Applications
• Boost Converters
Features and Benefits
Features
Benefits
Low RDSon
Lower Conduction Losses
Enable better thermal dissipation
Increased Reliability
Low Thermal Resistance to PCB (≤ 0.5°C/W)
100% Rg tested
Low Profile (≤ 0.9 mm)
results in Increased Power Density
Industry-Standard Pinout
⇒
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Compatible with Existing Surface Mount Techniques
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Industrial Qualification
Orderable part number
Package Type
Standard Pack
Note
Form
Tape and Reel
Tape and Reel
Quantity
4000
IRFH5020TRPBF
IRFH5020TR2PBF
PQFN 5mm x 6mm
PQFN 5mm x 6mm
400
Absolute Maximum Ratings
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Max.
200
± 20
5.1
4.1
43
Units
VDS
V
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC(Bottom) = 25°C
ID @ TC(Bottom) = 100°C
ID @ TC(Top) = 25°C
ID @ TC(Top) = 100°C
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
A
27
7.8
4.9
63
Power Dissipation
PD @TA = 25°C
PD @ TC(Top) = 25°C
3.6
8.3
W
Power Dissipation
Linear Derating Factor
Operating Junction and
0.07
-55 to + 150
W/°C
°C
TJ
TSTG
Storage Temperature Range
Notes through ꢀ are on page 8
www.irf.com
1
10/7/09
IRFH5020PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
200 ––– –––
––– 0.02 ––– V/°C Reference to 25°C, ID = 1mA
Conditions
VGS = 0V, ID = 250μA
BVDSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
V
ΔΒVDSS/ΔTJ
RDS(on)
VGS(th)
–––
3.0
47
55
VGS = 10V, ID = 7.5A
m
Ω
–––
-12
–––
–––
–––
5.0
V
VDS = VGS, ID = 150μA
ΔVGS(th)
IDSS
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
–––
–––
–––
–––
–––
18
––– mV/°C
20
1.0
100
VDS = 200V, VGS = 0V
μA
VDS = 200V, VGS = 0V, TJ = 125°C
mA
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
V
GS = 20V
GS = -20V
nA
S
––– -100
V
gfs
–––
36
–––
54
VDS = 50V, ID = 7.5A
Qg
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Qgs1
Qgs2
Qgd
Qgodr
Qsw
Qoss
RG
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Output Charge
8.6
2.1
11
–––
–––
–––
–––
–––
–––
V
DS = 100V
GS = 10V
V
nC
ID = 7.5A
14
See Fig.17 & 18
13
13
nC VDS = 16V, VGS = 0V
Gate Resistance
1.9
9.3
7.7
21
Ω
–––
–––
td(on)
tr
td(off)
tf
Turn-On Delay Time
V
DD = 100V, VGS = 10V
ID = 7.5A
R =1.8
Rise Time
–––
–––
–––
ns
Turn-Off Delay Time
Ω
G
Fall Time
6.0
See Fig.15
Ciss
Coss
Crss
Input Capacitance
––– 2290 –––
V
GS = 0V
Output Capacitance
–––
–––
120
33
–––
–––
pF
VDS = 100V
Reverse Transfer Capacitance
ƒ = 1.0MHz
Avalanche Characteristics
Parameter
Single Pulse Avalanche Energy
Typ.
–––
–––
Max.
320
7.5
Units
mJ
EAS
IAR
Avalanche Current
A
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
MOSFET symbol
D
S
–––
–––
7.5
(Body Diode)
Pulsed Source Current
showing the
integral reverse
A
G
ISM
–––
–––
63
(Body Diode)
p-n junction diode.
VSD
trr
Diode Forward Voltage
–––
–––
–––
–––
46
1.3
69
V
TJ = 25°C, IS = 7.5A, VGS = 0V
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
ns TJ = 25°C, IF = 7.5A, VDD = 100V
di/dt = 500A/μs
nC
Qrr
ton
97
150
Time is dominated by parasitic Inductance
Thermal Resistance
Parameter
Typ.
–––
–––
–––
–––
Max.
0.5
15
Units
Junction-to-Case
Junction-to-Case
Junction-to-Ambient
Junction-to-Ambient
RθJC (Bottom)
RθJC (Top)
RθJA
°C/W
35
RθJA (<10s)
21
2
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IRFH5020PbF
1000
100
10
1000
100
10
VGS
10V
VGS
10V
TOP
TOP
8.0V
7.0V
6.0V
5.5V
5.0V
4.8V
4.5V
8.0V
7.0V
6.0V
5.5V
5.0V
4.8V
4.5V
BOTTOM
BOTTOM
1
0.1
4.5V
1
4.5V
0.01
0.001
60μs PULSE WIDTH
Tj = 150°C
≤
≤ 60μs PULSE WIDTH
Tj = 25°C
0.1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
100
2.5
2.0
1.5
1.0
0.5
0.0
I
= 7.5A
D
V
= 10V
GS
10
1
T
= 150°C
J
T
= 25°C
J
0.1
0.01
V
= 50V
DS
≤ 60μs PULSE WIDTH
3.0
4.0
5.0
6.0
7.0
-60 -40 -20
T
0
20 40 60 80 100 120 140 160
V , Gate-to-Source Voltage (V)
GS
, Junction Temperature (°C)
J
Fig 4. Normalized On-Resistance Vs. Temperature
Fig 3. Typical Transfer Characteristics
100000
10000
1000
100
16
V
C
= 0V,
f = 1 MHZ
GS
= C + C , C SHORTED
I = 7.5A
D
iss
gs
gd ds
C
= C
V
V
V
= 160V
= 100V
= 40V
rss
gd
DS
DS
DS
C
= C + C
ds
12
8
oss
gd
Ciss
Coss
Crss
4
0
10
0
10
20
30
40
50
1
10
100
1000
Q
Total Gate Charge (nC)
G
V
, Drain-to-Source Voltage (V)
DS
Fig 5. Typical Capacitance Vs.Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs.Gate-to-Source Voltage
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3
IRFH5020PbF
100
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R (on)
DS
10
T
= 150°C
J
1msec
T
= 25°C
J
1
10msec
100μsec
1
Tc = 25°C
Tj = 150°C
Single Pulse
V
= 0V
GS
0.1
0.1
0.2
0.4
0.6
0.8
1.0
1
10
100
1000
V
, Source-to-Drain Voltage (V)
V
, Drain-to-Source Voltage (V)
SD
DS
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode Forward Voltage
8
6.0
5.0
4.0
3.0
2.0
I
I
I
I
= 1.0A
D
D
D
D
= 1.0mA
= 500μA
= 150μA
6
4
2
0
25
50
T
75
100
125
150
-75 -50 -25
0
25
50
75 100 125 150
, Ambient Temperature (°C)
T , Temperature ( °C )
A
J
Fig 9. Maximum Drain Current Vs.
Fig 10. Threshold Voltage Vs. Temperature
Case (Top) Temperature
100
10
D = 0.50
0.20
0.10
0.05
1
0.02
0.01
0.1
0.01
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
100
t
, Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case (Top)
4
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IRFH5020PbF
160
120
80
1400
1200
1000
800
600
400
200
0
I
= 7.5A
D
I
D
TOP
1.1A
1.6A
BOTTOM 7.5A
T
= 125°C
J
T
= 25°C
16
J
40
4
8
12
20
25
50
75
100
125
150
V
, Gate-to-Source Voltage (V)
GS
Starting T , Junction Temperature (°C)
J
Fig 13. Maximum Avalanche Energy vs. Drain Current
Fig 12. On-Resistance vs. Gate Voltage
V
(BR)DSS
t
p
15V
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
DD
-
I
A
I
AS
20V
Ω
0.01
t
p
Fig 14b. Unclamped Inductive Waveforms
Fig 14a. Unclamped Inductive Test Circuit
RD
VDS
VDS
90%
VGS
D.U.T.
RG
+VDD
-
10%
VGS
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1
td(on)
td(off)
tr
tf
Fig 15a. Switching Time Test Circuit
Fig 15b. Switching Time Waveforms
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5
IRFH5020PbF
Driver Gate Drive
P.W.
P.W.
Period
D.U.T
Period
D =
+
*
=10V
V
GS
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
D.U.T. I Waveform
SD
+
-
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
-
+
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
VDD
Re-Applied
Voltage
• dv/dt controlled by RG
RG
+
-
Body Diode
Forward Drop
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
Inductor Curent
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 16. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
Id
Vds
Vgs
L
VCC
DUT
0
Vgs(th)
1K
Qgs1
Qgs2
Qgd
Qgodr
Fig 18. Gate Charge Waveform
Fig 17. Gate Charge Test Circuit
6
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IRFH5020PbF
PQFN 5x6 Outline "B" Package Details
For footprint and stencil design recommendations, please refer to application note AN-1154 at
http://www.irf.com/technical-info/appnotes/an-1154.pdf
PQFN 5x6 Outline "B" Part Marking
INTERNATIONAL
RECTIFIER LOGO
DATE CODE
PART NUMBER
XXXX
(“4 or 5 digits”)
ASSEMBLY
SITE CODE
(Per SCOP 200-002)
MARKING CODE
XYWWX
XXXXX
(Per Marking Spec)
PIN 1
IDENTIFIER
LOT CODE
(Eng Mode - Min last 4 digits of EATI#)
(Prod Mode - 4 digits of SPN code)
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
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7
IRFH5020PbF
PQFN Tape and Reel
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
Qualification information†
Industrial††
(per JEDEC JES D47F ††† guidelines )
Qualification level
MS L 1
Moisture Sensitivity Level
RoHS compliant
PQFN 5mm x 6mm
(per JEDEC J-ST D-020D†††
)
Yes
Qualification standards can be found at International Rectifier’s web site
http://www.irf.com/product-info/reliability
Higher qualification ratings may be available should the user have such requirements.
Please contact your International Rectifier sales representative for further information:
http://www.irf.com/whoto-call/salesrep/
Applicable version of JEDEC standard at the time of product release.
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 11.3mH, RG = 25Ω, IAS = 7.5A.
Pulse width ≤ 400μs; duty cycle ≤ 2%.
R is measured at TJ of approximately 90°C.
θ
ꢀ When mounted on 1 inch square 2 oz copper pad on 1.5x1.5 in. board of FR-4 material.
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.10/2009
8
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INFINEON
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