IRFH5053TRPBF [INFINEON]
3 Phase Boost Converter Applications; 3相升压转换器的应用
| 型号： | IRFH5053TRPBF |
| 厂家： | 
Infineon |
| 描述： | 3 Phase Boost Converter Applications |
| 文件： | 总9页 (文件大小：254K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 97359
IRFH5053PbF
HEXFET® Power MOSFET
Applications
l
3 Phase Boost Converter Applications
VDSS
RDS(on) max
Qg
l
Secondary Side Synchronous Rectification
18m @V = 10V
Ω
100V
24nC
GS
Benefits
S
S
l
l
l
Very low RDS(ON) at 10V VGS
Low Gate Charge
Fully Characterized Avalanche Voltage and
D
D
D
D
S
G
Current
l
l
l
l
l
100% Tested for RG
Lead-Free (Qualified up to 260°C Reflow)
RoHS compliant (Halogen Free)
Low Thermal Resistance
PQFN
Large Source Lead for more reliable Soldering
Absolute Maximum Ratings
Parameter
Max.
100
± 20
9.3
Units
VDS
Drain-to-Source Voltage
V
V
Gate-to-Source Voltage
GS
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
I
I
I
I
@ TA = 25°C
D
D
D
@ TA = 70°C
@ TC = 25°C
7.4
A
46
75
DM
Power Dissipation
P
P
@TA = 25°C
@TA = 70°C
3.1
D
D
W
W/°C
°C
Power Dissipation
2.0
Linear Derating Factor
Operating Junction and
0.025
-55 to + 150
T
J
T
Storage Temperature Range
STG
Thermal Resistance
Parameter
Typ.
–––
Max.
1.6
Units
Junction-to-Case
RθJC
RθJA
°C/W
Junction-to-Ambient
–––
40
Notes through ꢀ are on page 9
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1
12/16/08
IRFH5053PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
Min. Typ. Max. Units
Conditions
VGS = 0V, ID = 250µA
BVDSS
∆Β
RDS(on)
VGS(th)
∆VGS(th)
IDSS
100
–––
0.11
14.4
3.7
–––
V
∆
DSS/ TJ
V
Breakdown Voltage Temp. Coefficient –––
––– V/°C Reference to 25°C, ID = 1mA
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
–––
3.0
18
VGS = 10V, ID = 9.3A
mΩ
V
4.9
VDS = VGS, ID = 100µA
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
–––
–––
–––
–––
–––
19
-11
––– mV/°C
–––
–––
–––
20
µA
VDS = 80V, VGS = 0V
250
VDS = 80V, VGS = 0V, TJ = 125°C
VGS = 20V
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
100
nA
––– -100
VGS = -20V
gfs
Qg
–––
24
–––
36
S
VDS = 50V, ID = 7.4A
–––
–––
–––
–––
–––
–––
–––
Qgs1
Qgs2
Qgd
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
5.2
1.5
8.6
8.7
10.1
12
–––
–––
–––
–––
–––
–––
VDS = 50V
VGS = 10V
nC
ID = 7.4A
Qgodr
Qsw
Qoss
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
See Fig.17 & 18
Output Charge
nC
V
DS = 16V, VGS = 0V
RG
td(on)
Gate Resistance
Turn-On Delay Time
Rise Time
–––
–––
–––
–––
–––
0.8
12
Ω
–––
–––
V
DD = 50V, VGS = 10V
tr
7.5
18
–––
–––
–––
ID = 7.4A
RG=1.8Ω
See Fig.15
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
4.1
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
––– 1510 –––
V
V
GS = 0V
–––
–––
230
59
–––
–––
DS = 50V
pF
ƒ = 1.0MHz
Avalanche Characteristics
Parameter
Typ.
–––
–––
Max.
Units
mJ
Single Pulse Avalanche Energy
EAS
IAR
21
Avalanche Current
7.4
A
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
IS
D
S
Continuous Source Current
MOSFET symbol
–––
–––
2.8
(Body Diode)
Pulsed Source Current
showing the
integral reverse
A
G
ISM
–––
–––
75
(Body Diode)
p-n junction diode.
VSD
trr
Diode Forward Voltage
–––
–––
–––
–––
31
1.3
47
V
T = 25°C, I = 7.4A, V = 0V
J S GS
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
ns T = 25°C, I = 7.4A, VDD = 50V
J F
Qrr
ton
di/dt = 800A/µs
See Fig.16
210
320
nC
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
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IRFH5053PbF
100
10
100
10
1
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
4.8V
4.5V
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
4.8V
4.5V
TOP
TOP
BOTTOM
BOTTOM
1
0.1
0.01
4.5V
60µs PULSE WIDTH
Tj = 150°C
≤
60µs PULSE WIDTH
Tj = 25°C
≤
4.5V
0.1
0.1
1
10
100
1000
0.1
1
10
100
1000
V
, Drain-to-Source Voltage (V)
DS
V
, Drain-to-Source Voltage (V)
DS
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
100
10
1
2.5
2.0
1.5
1.0
0.5
I
= 9.3A
D
V
= 10V
GS
T
= 150°C
J
T
= 25°C
J
V
= 50V
DS
≤
60µs PULSE WIDTH
0.1
3
4
5
6
7
-60 -40 -20
0
20 40 60 80 100 120140 160
T
J
, Junction Temperature (°C)
V
, Gate-to-Source Voltage (V)
GS
Fig 4. Normalized On-Resistance
Fig 3. Typical Transfer Characteristics
vs.Temperature
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3
IRFH5053PbF
14.0
12.0
10.0
8.0
100000
V
= 0V,
= C
f = 1 MHZ
GS
I = 7.4A
D
C
C
C
+ C , C
SHORTED
iss
gs
gd
ds
= C
rss
oss
gd
= C + C
V
V
= 80V
= 50V
DS
DS
ds
gd
10000
1000
100
C
iss
C
oss
6.0
C
rss
4.0
2.0
0.0
10
0
5
10
15
20
25
30
1
10
100
Q , Total Gate Charge (nC)
V
DS
, Drain-to-Source Voltage (V)
G
Fig 6. Typical Gate Charge vs.
Fig 5. Typical Capacitance vs.
Gate-to-SourceVoltage
Drain-to-SourceVoltage
1000
100
10
100
10
1
T
= 25°C
A
OPERATION IN THIS AREA
LIMITED BY R (on)
Tj = 150°C
Single Pulse
DS
T = 150°C
J
100µsec
1msec
10msec
T
= 25°C
J
DC
0.1
1
V
GS
= 0V
0.1
0.1
0.01
1
10
100
1000
0.2
0.4
0.6
0.8
1.0
1.2
V
, Drain-to-Source Voltage (V)
V
, Source-to-Drain Voltage (V)
DS
SD
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
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IRFH5053PbF
10
8
4.5
4.0
3.5
3.0
2.5
2.0
6
I
= 100µA
D
4
2
0
25
50
75
100
125
150
-75 -50 -25
0
25 50 75 100 125 150
T
, Ambient Temperature (°C)
T , Temperature ( °C )
A
J
Fig 9. Maximum Drain Current vs.
Fig 10. Threshold Voltage vs. Temperature
AmbientTemperature
100
D = 0.50
10
1
0.20
0.10
R1
R1
R2
R2
R3
R3
R4
R4
0.05
Ri (°C/W) τi (sec)
τ
τ
J τJ
τ
1.3862
3.6808
18.148
16.804
0.000201
0.013839
0.993400
37.6
AτA
0.02
0.01
τ
1 τ1
τ
τ
2 τ2
3 τ3
4 τ4
Ci= τi/Ri
Ci= τi/Ri
0.1
0.01
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + T
SINGLE PULSE
( THERMAL RESPONSE )
A
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
100
1000
t
, Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
IRFH5053PbF
50
90
80
70
60
50
40
30
20
10
0
I
I
= 9.3A
D
D
TOP
1.5A
1.9A
40
BOTTOM 7.4A
T
= 125°C
30
20
10
J
T
= 25°C
12
J
4
6
8
10
14
16
25
50
75
100
125
150
Starting T , Junction Temperature (°C)
J
V
Gate -to -Source Voltage (V)
GS,
Fig 12. On-Resistance vs. Gate Voltage
Fig 13. Maximum Avalanche Energy
vs. Drain Current
RD
VDS
15V
VGS
D.U.T.
RG
DRIVER
+
L
+VDD
V
DS
-
VGS
PulseWidth ≤ 1 µs
DutyFactor≤ 0.1
D.U.T
AS
R
G
V
DD
-
I
A
20V
Ω
0.01
t
p
Fig 15a. Switching Time Test Circuit
Fig 14a. Unclamped Inductive Test Circuit
V
(BR)DSS
VDS
t
p
90%
10%
VGS
td(on)
td(off)
tr
tf
I
AS
Fig 15b. Switching Time Waveforms
Fig 14b. Unclamped Inductive Waveforms
6
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IRFH5053PbF
Driver Gate Drive
P.W.
P.W.
Period
D.U.T
Period
D =
+
*
=10V
V
GS
CircuitLayoutConsiderations
• LowStrayInductance
• Ground Plane
• LowLeakageInductance
Current Transformer
-
D.U.T. I Waveform
SD
+
-
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
-
+
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
VDD
Re-Applied
Voltage
• dv/dtcontrolledbyRG
RG
+
-
Body Diode
Forward Drop
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
Inductor Curent
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 16. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
Current Regulator
Id
Vds
Same Type as D.U.T.
Vgs
50KΩ
.2µF
.3µF
12V
+
V
DS
D.U.T.
-
Vgs(th)
Qgs1
V
GS
3mA
I
I
Qgs2
Qgd
Qgodr
G
D
Current Sampling Resistors
Fig 18. Gate Charge Waveform
Fig 17. Gate Charge Test Circuit
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7
IRFH5053PbF
PQFN Package Details
PQFN Part Marking
INTERNATIONAL
RECTIFIER LOGO
6
DATE CODE
PART NUMBER
XXXX
ASSEMBLY SITE CODE
(Per SCOP 200-002)
MARKING CODE
XYWWX
XXXXX
(Per Marking Spec.)
PIN 1
IDENTIFIER
LOT CODE
(Eng Mode - Min. last 4 digits of EATI #)
(Prod Mode - 4 digits SPN code)
TOP MARKING (LASER)
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
8
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IRFH5053PbF
PQFN Tape and Reel
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 0.75mH, RG = 25Ω, IAS = 7.4A.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
Rthjc is guaranteed by design
ꢀ When mounted on 1 inch square 2 oz copper pad on 1.5x1.5 in. board of FR-4 material.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.12/08
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9
相关型号：
IRFH5104TR2PBF
Power Field-Effect Transistor, 24A I(D), 40V, 0.0035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 6 X 5 MM, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, QFN-8
INFINEON
IRFH5104TRPBF
Power Field-Effect Transistor, 24A I(D), 40V, 0.0035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 6 X 5 MM, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, QFN-8
INFINEON
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