IRFP15N60LPBF [INFINEON]
SMPS MOSFET; 开关电源MOSFET
| 型号： | IRFP15N60LPBF |
| 厂家： | 
Infineon |
| 描述： | SMPS MOSFET |
| 文件： | 总9页 (文件大小：189K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 95517
SMPS MOSFET
IRFP15N60LPbF
HEXFET® Power MOSFET
Applications
• Zero Voltage Switching SMPS
• Telecom and Server Power Supplies
• Uninterruptible Power Supplies
• Motor Control applications
• Lead-Free
Trr typ.
VDSS RDS(on) typ.
385m
ID
600V
Ω
130ns 15A
Features and Benefits
• SuperFast body diode eliminates the need for external
diodes in ZVS applications.
• Lower Gate charge results in simpler drive requirements.
• Enhanced dv/dt capabilities offer improved ruggedness.
TO-247AC
• Higher Gate voltage threshold offers improved noise immunity.
Absolute Maximum Ratings
Parameter
Continuous Drain Current, VGS @ 10V
Max.
15
Units
A
I
I
I
@ T = 25°C
C
D
D
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
@ T = 100°C
C
9.7
60
DM
P
@T = 25°C
Power Dissipation
C
280
W
D
Linear Derating Factor
Gate-to-Source Voltage
2.3
±30
W/°C
V
V
GS
Peak Diode Recovery dv/dt
Operating Junction and
dv/dt
10
V/ns
T
J
-55 to + 150
T
Storage Temperature Range
°C
STG
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
300 (1.6mm from case )
1.1(10)
N•m (lbf•in)
Diode Characteristics
Symbol
Parameter
Min. Typ. Max. Units
Conditions
D
I
I
Continuous Source Current
––– –––
––– –––
––– –––
15
MOSFET symbol
S
(Body Diode)
Pulsed Source Current
A
showing the
integral reverse
G
60
SM
S
(Body Diode)
p-n junction diode.
V
t
T = 25°C, I = 15A, V = 0V
J S GS
Diode Forward Voltage
Reverse Recovery Time
1.5
V
SD
T = 25°C, I = 15A
––– 130 200
––– 240 360
ns
rr
J
F
TJ = 125°C, di/dt = 100A/µs
Q
rr
T = 25°C, I = 15A, V = 0V
Reverse Recovery Charge
––– 450 670 nC
––– 1080 1620
J
S
GS
TJ = 125°C, di/dt = 100A/µs
IRRM
T = 25°C
J
Reverse Recovery Current
Forward Turn-On Time
––– 5.8
8.7
A
t
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
on
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1
07/07/04
IRFP15N60LPbF
Static @ TJ = 25°C (unless otherwise specified)
Symbol
V(BR)DSS
Parameter
Drain-to-Source Breakdown Voltage
Min. Typ. Max. Units
Conditions
VGS = 0V, ID = 250µA
600
–––
0.39
385
–––
–––
–––
–––
–––
0.79
–––
V
∆V(BR)DSS/∆TJ
RDS(on)
Breakdown Voltage Temp. Coefficient –––
––– V/°C Reference to 25°C, ID = 1mA
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
–––
3.0
460
5.0
VGS = 10V, ID = 9.0A
VDS = VGS, ID = 250µA
Ω
V
m
VGS(th)
IDSS
Drain-to-Source Leakage Current
–––
–––
–––
–––
–––
50
µA
VDS = 600V, VGS = 0V
2.0
mA VDS = 480V, VGS = 0V, TJ = 125°C
nA VGS = 30V
IGSS
RG
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Internal Gate Resistance
100
-100
–––
VGS = -30V
Ω
f = 1MHz, open drain
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
gfs
Qg
Parameter
Forward Transconductance
Total Gate Charge
Min. Typ. Max. Units
Conditions
VDS = 50V, ID = 9.0A
8.3
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
20
–––
100
30
S
ID = 15A
Qgs
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
nC VDS = 480V
VGS = 10V, See Fig. 7 & 15
VDD = 300V
ns ID = 15A
Qgd
46
td(on)
–––
–––
–––
–––
tr
44
td(off)
Ω
Turn-Off Delay Time
Fall Time
28
RG = 1.8
tf
5.5
VGS = 10V, See Fig. 11a & 11b
Ciss
Input Capacitance
––– 2720 –––
VGS = 0V
Coss
Output Capacitance
–––
–––
–––
–––
260
20
–––
–––
–––
–––
VDS = 25V
Crss
Reverse Transfer Capacitance
Effective Output Capacitance
Effective Output Capacitance
pF ƒ = 1.0MHz, See Fig. 5
VGS = 0V,VDS = 0V to 480V
Coss eff.
Coss eff. (ER)
120
100
(Energy Related)
Avalanche Characteristics
Parameter
Single Pulse Avalanche Energy
Typ.
–––
–––
–––
Max.
320
15
Units
mJ
A
Symbol
EAS
Avalanche Current
IAR
Repetitive Avalanche Energy
EAR
28
mJ
Thermal Resistance
Symbol
Parameter
Typ.
–––
Max.
0.44
–––
40
Units
Rθ
Rθ
Rθ
Junction-to-Case
JC
CS
JA
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
0.24
–––
°C/W
Notes:
Pulse width ≤ 300µs; duty cycle ≤ 2%.
ꢀ Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS
Coss eff.(ER) is a fixed capacitance that stores the same energy
as Coss while VDS is rising from 0 to 80% VDSS
Repetitive rating; pulse width limited by
max. junction temperature. (See Fig. 11)
Starting TJ = 25°C, L = 2.9mH, RG = 25Ω,
IAS = 15A, dv/dt = 10V/ns. (See Figure 12a)
ISD ≤ 15A, di/dt ≤ 340A/µs, VDD ≤ V(BR)DSS
TJ ≤ 150°C.
.
.
,
2
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IRFP15N60LPbF
1000
100
10
100
10
VGS
15V
12V
VGS
TOP
TOP
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
5.0V
10V
9.0V
8.0V
7.0V
6.0V
5.0V
BOTTOM
BOTTOM
5.0V
1
1
5.0V
0.1
0.1
0.01
0.01
0.001
20µs PULSE WIDTH
Tj = 150°C
20µs PULSE WIDTH
Tj = 25°C
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
100
3.0
I
= 15A
D
V
= 10V
GS
2.5
2.0
1.5
1.0
0.5
0.0
T
= 150°C
J
10
1
T
6
= 25°C
J
0.1
0.01
V
= 50V
DS
20µs PULSE WIDTH
4
8
10
12
14
16
-60 -40 -20
0
20 40 60 80 100 120 140 160
V
, Gate-to-Source Voltage (V)
T
J
, Junction Temperature (°C)
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
vs. Temperature
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3
IRFP15N60LPbF
25
20
15
10
5
100000
V
= 0V,
f = 1 MHZ
GS
C
= C + C , C SHORTED
iss
gs gd ds
C
= C
rss
gd
10000
1000
100
10
C
= C + C
ds gd
oss
C
iss
C
oss
C
rss
0
1
0
100 200 300 400 500 600 700
Drain-to-Source Voltage (V)
1
10
100
1000
V
, Drain-to-Source Voltage (V)
DS
V
DS,
Fig 5. Typical Capacitance vs.
Fig 6. Typ. Output Capacitance
Drain-to-Source Voltage
Stored Energy vs. VDS
12.0
10.0
8.0
100.00
10.00
1.00
I = 15A
D
V
V
V
= 480V
= 300V
= 120V
DS
DS
DS
T
= 150°C
J
6.0
T
= 25°C
J
4.0
2.0
V
= 0V
GS
0.0
0.10
0
10
20
30
40
50
60
70
0.2
0.4
V
0.6
0.8
1.0
1.2
1.4
1.6
Q
Total Gate Charge (nC)
, Source-to-Drain Voltage (V)
G
SD
Fig 8. Typical Source-Drain Diode
Fig 7. Typical Gate Charge vs.
Forward Voltage
Gate-to-Source Voltage
4
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IRFP15N60LPbF
1000
100
10
16
14
12
10
8
OPERATION IN THIS AREA
LIMITED BY R (on)
DS
100µsec
6
1msec
1
4
Tc = 25°C
Tj = 150°C
2
Single Pulse
10msec
1000
0.1
0
1
10
100
10000
25
50
T
75
100
125
150
V
, Drain-to-Source Voltage (V)
, Case Temperature (°C)
DS
C
Fig 9. Maximum Safe Operating Area
Fig 10. Maximum Drain Current vs.
Case Temperature
RD
V
VDS
DS
90%
VGS
D.U.T.
RG
+VDD
-
10%
10V
V
GS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
t
t
r
t
t
f
d(on)
d(off)
Fig 11b. Switching Time Waveforms
Fig 11a. Switching Time Test Circuit
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5
IRFP15N60LPbF
1
D = 0.50
0.1
0.01
0.20
0.10
0.05
0.02
0.01
P
DM
t
1
0.001
0.0001
SINGLE PULSE
( THERMAL RESPONSE )
t
2
Notes:
1. Duty factor D =
t
/ t
1
2
2. Peak T
= P
x
Z
+ T
J
DM
thJC
C
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t
, Rectangular Pulse Duration (sec)
1
Fig 12. Maximum Effective Transient Thermal Impedance, Junction-to-Case
5.0
4.5
4.0
3.5
I
= 250µA
D
3.0
2.5
2.0
-75 -50 -25
0
25 50 75 100 125 150 175
, Temperature ( °C )
T
J
Fig 13. Threshold Voltage vs. Temperature
6
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IRFP15N60LPbF
600
500
400
300
200
100
0
I
D
TOP
6.7A
9.5A
BOTTOM 15A
25
50
75
100
125
150
Starting T , Junction Temperature (°C)
J
Fig 14a. Maximum Avalanche Energy
vs. Drain Current
15V
V
(BR)DSS
t
p
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
DD
-
I
A
20V
0.01Ω
t
p
I
AS
Fig 14b. Unclamped Inductive Test Circuit
Fig 14c. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
Q
Q
G
50KΩ
.2µF
VGS
V
12V
.3µF
Q
+
GS
GD
V
DS
D.U.T.
-
V
GS
V
G
3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 15b. Basic Gate Charge Waveform
Fig 15a. Gate Charge Test Circuit
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7
IRFP15N60LPbF
Peak Diode Recovery dv/dt Test Circuit
+
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
D.U.T
-
+
-
-
+
RG
• dv/dt controlled by RG
+
-
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
VDD
Driver Gate Drive
P.W.
P.W.
Period
Period
D =
V
=10V
*
GS
D.U.T. I Waveform
SD
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
Re-Applied
Voltage
Body Diode
Forward Drop
Inductor Curent
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 16. For N-Channel HEXFET® Power MOSFETs
8
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IRFP15N60LPbF
TO-247AC Package Outline
Dimensions are shown in millimeters (inches)
TO-247AC Part Marking Information
EXAMPLE: THIS IS AN IRFPE30
WIT H AS S E MB L Y
PART NUMBER
INTERNATIONAL
RECTIFIER
LOGO
LOT CODE 5657
IRFPE30
ASS EMBLED ON WW 35, 2000
IN THE ASSEMBLY LINE "H"
035H
57
56
DAT E CODE
YEAR 0 = 2000
WE E K 35
Note: "P" in assembly line
position indicates "Lead-Free"
ASSEMBLY
LOT CODE
LINE H
TO-247AC package is not recommended for Surface Mount Application.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.07/04
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