IRFP17N50LS [INFINEON]

Power MOSFET(Vdss=500V, Rds(on)typ.=0.28ohm, Id=16A); 功率MOSFET ( VDSS = 500V , RDS(ON) (典型值) = 0.28ohm ,ID = 16A)
IRFP17N50LS
型号: IRFP17N50LS
厂家: Infineon    Infineon
描述:

Power MOSFET(Vdss=500V, Rds(on)typ.=0.28ohm, Id=16A)
功率MOSFET ( VDSS = 500V , RDS(ON) (典型值) = 0.28ohm ,ID = 16A)

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PD - 94351  
IRFP17N50LS  
SMPS MOSFET  
HEXFET® Power MOSFET  
Applications  
l Switch Mode Power Supply (SMPS)  
l Uninterruptible Power Supply  
l High Speed Power Switching  
l ZVS and High Frequency Circuit  
l PWM Inverters  
VDSS  
500V  
RDS(on) typ.  
Trr  
170ns  
ID  
16A  
0.28Ω  
Benefits  
l Low Gate Charge Qg results in Simple Drive Requirement  
l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness  
l Fully Characterized Capacitance and Avalanche Voltage  
and Current  
l Low Trr and Soft Diode Recovery  
l High Performance Optimised Anti-parallel Diode  
SMD-247  
Absolute Maximum Ratings  
Parameter  
Max.  
Units  
ID @ TC = 25°C  
ID @ TC = 100°C  
IDM  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current   
16  
11  
A
64  
220  
PD @TC = 25°C  
Power Dissipation  
W
W/°C  
V
Linear Derating Factor  
1.8  
VGS  
dv/dt  
TJ  
Gate-to-Source Voltage  
± 30  
Peak Diode Recovery dv/dt ƒ  
Operating Junction and  
13  
V/ns  
-55 to + 150  
TSTG  
Storage Temperature Range  
Soldering Temperature, for 10 seconds  
(1.6mm from case )  
300  
10  
°C  
Mounting Torque, 6-32 or M3 screw  
lbft.in(N.m)  
Diode Characteristics  
Symbol  
Parameter  
Min. Typ. Max. Units  
Conditions  
D
IS  
Continuous Source Current  
(Body Diode)  
16  
MOSFET symbol  
––– –––  
––– –––  
showing the  
A
G
ISM  
Pulsed Source Current  
(Body Diode)   
64  
integral reverse  
p-n junction diode.  
S
VSD  
trr  
Diode Forward Voltage  
––– ––– 1.5  
––– 170 250  
––– 220 330  
––– 470 710  
––– 810 1210  
V
TJ = 25°C, IS = 16A, VGS = 0V „  
TJ = 25°C  
TJ = 125°C  
TJ = 25°C  
TJ = 125°C  
IF = 16A  
ns  
Reverse Recovery Time  
Reverse Recovery Charge  
di/dt = 100A/µs „  
Qrr  
nC  
A
IRRM  
ton  
Reverse Recovery Current  
Forward Turn-On Time  
––– 7.3  
11  
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)  
Typical SMPS Topologies  
l
Bridge Converters  
l All Zero Voltage Switching  
www.irf.com  
1
11/28/01  
IRFP17N50LS  
Static @ TJ = 25°C (unless otherwise specified)  
Symbol  
Parameter  
Min. Typ. Max. Units  
500 ––– –––  
0.6 ––– V/°C Reference to 25°C, ID = 1mA†  
Conditions  
V(BR)DSS  
Drain-to-Source Breakdown Voltage  
V
VGS = 0V, ID = 250µA  
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient –––  
RDS(on)  
VGS(th)  
Static Drain-to-Source On-Resistance  
Gate Threshold Voltage  
––– 0.28 0.32  
3.0 ––– 5.0  
V
VGS = 10V, ID = 9.9A „  
VDS = VGS, ID = 250µA  
––– ––– 50  
––– ––– 2.0  
––– ––– 100  
––– ––– -100  
µA  
VDS = 500V, VGS = 0V  
IDSS  
IGSS  
Drain-to-Source Leakage Current  
mA VDS = 400V, VGS = 0V, TJ = 125°C  
GS = 30V  
VGS = -30V  
Gate-to-Source Forward Leakage  
Gate-to-Source Reverse Leakage  
V
nA  
Dynamic @ TJ = 25°C (unless otherwise specified)  
Symbol  
Parameter  
Forward Transconductance  
Total Gate Charge  
Min. Typ. Max. Units  
Conditions  
gfs  
11 ––– –––  
S
VDS = 50V, ID = 9.9A  
ID = 16A  
Qg  
––– ––– 130  
––– ––– 33  
––– ––– 59  
Qgs  
Qgd  
td(on)  
tr  
Gate-to-Source Charge  
Gate-to-Drain ("Miller") Charge  
Turn-On Delay Time  
Rise Time  
nC VDS = 400V  
VGS = 10V „  
VDD = 250V  
–––  
–––  
–––  
–––  
21 –––  
51 –––  
50 –––  
28 –––  
ID = 16A  
ns  
td(off)  
tf  
Turn-Off Delay Time  
Fall Time  
RG = 7.5Ω  
VGS = 10V „  
VGS = 0V  
Ciss  
Coss  
Crss  
Coss  
Coss  
Coss eff.  
Input Capacitance  
––– 2760 –––  
––– 325 –––  
Output Capacitance  
Reverse Transfer Capacitance  
Output Capacitance  
Output Capacitance  
Effective Output Capacitance  
VDS = 25V  
–––  
––– 3690 –––  
––– 84 –––  
––– 159 –––  
37 –––  
pF  
ƒ = 1.0MHz  
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz  
VGS = 0V, VDS = 400V, ƒ = 1.0MHz  
VGS = 0V, VDS = 0V to 400V ꢀ  
Avalanche Characteristics  
Symbol  
EAS  
Parameter  
Single Pulse Avalanche Energy‚  
Avalanche Current  
Typ.  
–––  
–––  
–––  
Max.  
390  
16  
Units  
mJ  
IAR  
A
EAR  
Repetitive Avalanche Energy  
22  
mJ  
Thermal Resistance  
Symbol  
Parameter  
Junction-to-Case  
Typ.  
–––  
Max.  
0.56  
–––  
40  
Units  
RθJC  
RθCS  
RθJA  
Case-to-Sink, Flat, Greased Surface  
Junction-to-Ambient  
0.24  
–––  
°C/W  
Notes:  
Repetitive rating; pulse width limited by  
„Pulse width 300µs; duty cycle 2%.  
max. junction temperature.  
‚Starting TJ = 25°C, L = 3.0mH, RG = 25,  
IAS = 16A.  
ƒISD 16A, di/dt 347A/µs, VDD V(BR)DSS  
TJ 150°C  
,
2
www.irf.com  
IRFP17N50LS  
100  
10  
100  
10  
1
VGS  
15V  
12V  
VGS  
15V  
12V  
10V  
8.0V  
7.0V  
6.0V  
5.5V  
TOP  
TOP  
10V  
8.0V  
7.0V  
6.0V  
5.5V  
BOTTOM 5.0V  
BOTTOM 5.0V  
5.0V  
1
5.0V  
0.1  
0.01  
20µs PULSE WIDTH  
Tj = 150°C  
20µs PULSE WIDTH  
Tj = 25°C  
0.1  
0.1  
1
10  
100  
0.1  
1
10  
100  
V
, Drain-to-Source Voltage (V)  
V
, Drain-to-Source Voltage (V)  
DS  
DS  
Fig 1. Typical Output Characteristics  
Fig 2. Typical Output Characteristics  
100  
3.0  
16A  
=
I
D
°
T = 150 C  
J
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
10  
°
T = 25 C  
J
1
V
= 50V  
DS  
20µs PULSE WIDTH  
V
=10V  
GS  
0.1  
4.0  
5.0  
V
6.0  
7.0  
8.0 9.0 10.0  
-60 -40 -20  
0
20 40 60 80 100 120 140 160  
°
, Gate-to-Source Voltage (V)  
T , Junction Temperature ( C)  
J
GS  
Fig 4. Normalized On-Resistance  
Fig 3. Typical Transfer Characteristics  
Vs. Temperature  
www.irf.com  
3
IRFP17N50LS  
20  
16  
12  
8
100000  
I
D
=
16A  
V
= 0V,  
f = 1 MHZ  
, C SHORTED  
gd ds  
GS  
V
V
V
= 400V  
= 250V  
= 100V  
C
= C + C  
DS  
DS  
DS  
iss  
gs  
C
= C  
gd  
rss  
C
= C + C  
oss  
ds gd  
10000  
1000  
100  
Ciss  
Coss  
Crss  
4
10  
0
0
30  
60  
90  
120  
150  
1
10  
100  
1000  
Q
, Total Gate Charge (nC)  
G
V
, Drain-to-Source Voltage (V)  
DS  
Fig 5. Typical Capacitance Vs.  
Fig 6. Typical Gate Charge Vs.  
Drain-to-Source Voltage  
Gate-to-Source Voltage  
1000  
100  
10  
100  
10  
1
OPERATION IN THIS AREA LIMITED  
BY R  
DS(on)  
°
T = 150 C  
J
10us  
100us  
°
T = 25 C  
J
1ms  
1
10ms  
°
T = 25 C  
C
°
T = 150 C  
Single Pulse  
J
V
= 0 V  
GS  
0.1  
0.1  
0.2  
10  
100  
1000  
10000  
0.6  
0.9  
1.3  
1.6  
V
, Drain-to-Source Voltage (V)  
V
,Source-to-Drain Voltage (V)  
DS  
SD  
Fig 7. Typical Source-Drain Diode  
Fig 8. Maximum Safe Operating Area  
Forward Voltage  
4
www.irf.com  
IRFP17N50LS  
RD  
20  
16  
12  
8
VDS  
VGS  
D.U.T.  
RG  
+VDD  
-
10V  
Pulse Width ≤ 1 µs  
Duty Factor ≤ 0.1 %  
Fig 10a. Switching Time Test Circuit  
4
V
DS  
90%  
0
25  
50  
T
75  
100  
125  
°
150  
, Case Temperature ( C)  
C
10%  
V
GS  
t
t
r
t
t
f
Fig 9. Maximum Drain Current Vs.  
d(on)  
d(off)  
Case Temperature  
Fig 10b. Switching Time Waveforms  
1
D = 0.50  
0.20  
0.1  
0.10  
0.05  
0.02  
0.01  
SINGLE PULSE  
(THERMAL RESPONSE)  
P
2
DM  
0.01  
t
1
t
2
Notes:  
1. Duty factor D =t / t  
1
2. Peak T =P  
x Z  
+ T  
thJC C  
J
DM  
0.001  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
t , Rectangular Pulse Duration (sec)  
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case  
www.irf.com  
5
IRFP17N50LS  
800  
640  
480  
320  
160  
0
I
D
TOP  
7A  
10A  
BOTTOM 16A  
1 5V  
DRIVER  
L
V
G
DS  
D.U.T  
AS  
R
+
V
D D  
-
I
A
20V  
0.01  
t
p
Fig 12c. Unclamped Inductive Test Circuit  
25  
50  
75  
100  
125  
150  
°
Starting T , Junction Temperature ( C)  
J
Fig 12a. Maximum Avalanche Energy  
V
(BR)DSS  
Vs. Drain Current  
t
p
I
AS  
Fig 12d. Unclamped Inductive Waveforms  
Current Regulator  
Same Type as D.U.T.  
Q
G
50KΩ  
.2µF  
12V  
VGS  
.3µF  
Q
Q
GD  
GS  
+
V
DS  
D.U.T.  
-
V
V
GS  
G
3mA  
I
I
D
G
Charge  
Current Sampling Resistors  
Fig 13b. Basic Gate Charge Waveform  
Fig 13a. Gate Charge Test Circuit  
6
www.irf.com  
IRFP17N50LS  
Peak Diode Recovery dv/dt Test Circuit  
+
Circuit Layout Considerations  
Low Stray Inductance  
Ground Plane  
Low Leakage Inductance  
Current Transformer  
D.U.T  
ƒ
-
+
‚
-
„
-
+

RG  
dv/dt controlled by RG  
+
-
Driver same type as D.U.T.  
ISD controlled by Duty Factor "D"  
D.U.T. - Device Under Test  
VDD  
Driver Gate Drive  
P.W.  
Period  
Period  
D =  
P.W.  
V
=10V  
*
GS  
D.U.T. I Waveform  
SD  
Reverse  
Recovery  
Current  
Body Diode Forward  
Current  
di/dt  
D.U.T. V Waveform  
DS  
Diode Recovery  
dv/dt  
V
DD  
Re-Applied  
Voltage  
Body Diode  
Forward Drop  
Inductor Curent  
I
SD  
Ripple 5%  
* VGS = 5V for Logic Level Devices  
Fig 14. For N-Channel HEXFET® Power MOSFETs  
www.irf.com  
7
IRFP17N50LS  
SMD-247 Package Outline  
0.25 [.010]  
D
B
A
5.30 [.208]  
4.70 [.186]  
3.65 [.143]  
3.55 [.140]  
15.90 [.625]  
15.30 [.603]  
13.70 [.539]  
13.50 [.532]  
Ø
B
2.50 [.099]  
1.50 [.060]  
0.25 [.010]  
D
B
5.70 [.224]  
5.30 [.209]  
5.50 [.217]  
4
0.95 [.037]  
0.35 [.014]  
16.20 [.637]  
16.00 [.630]  
2.75 [.108]  
2.25 [.089]  
20.30 [.799]  
19.70 [.776]  
2X R  
D
4
3.0 [.118]  
MAX.  
C
1
2
3
5.65 [.222]  
4.65 [.183]  
0.20 [.225]  
D
1.40 [.055]  
1.00 [.040]  
5.45 [.215]  
2X  
0.25 [.010]  
2.65 [.104]  
2.15 [.085]  
D
C A  
2X  
LEAD ASSIGNMENTS  
NOTES:  
MOS F ET  
IGBT  
1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994.  
2. CONTROLLING DIMENSION: MILLIMETER.  
1 - GATE  
1 - GATE  
2 - COL L E CT OR  
3 - EMITT ER  
2 - DRAIN  
3 - SOURCE  
4 - DRAIN  
0.80 [.031]  
0.40 [.016]  
3. DIMENS IONS ARE SHOWN IN MILLIMETERS [INCHES].  
4. TO-247 S MD IS A MODIFIED TO-247AC.  
2X  
4 - COL L E CT OR  
SMD-247 Part Marking Information  
EXAMPLE: THIS IS AN IRFP450S WITH  
ASSEMBLYLOT CODE 3A1Q  
PART NUMBER  
INTERNATIONAL  
RECTIFIER  
LOGO  
IRFP450S  
3A1Q 9906  
DATE CODE  
(YYWW)  
ASSEMBLY  
LOT CODE  
YY = YEAR  
WW = WE E K  
Data and specifications subject to change without notice.  
This product has been designed and qualified for the Industrial market.  
Qualification Standards can be found on IRs Web site.  
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105  
TAC Fax: (310) 252-7903  
Visit us at www.irf.com for sales contact information.11/01  
8
www.irf.com  

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