IRFP17N50LPBF [INFINEON]

SMPS MOSFET HEXFET㈢Power MOSFET; 开关电源MOSFET HEXFET㈢Power MOSFET
IRFP17N50LPBF
型号: IRFP17N50LPBF
厂家: Infineon    Infineon
描述:

SMPS MOSFET HEXFET㈢Power MOSFET
开关电源MOSFET HEXFET㈢Power MOSFET

开关
文件: 总8页 (文件大小:188K)
中文:  中文翻译
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PD - 95662  
IRFP17N50LPbF  
SMPS MOSFET  
HEXFET® Power MOSFET  
Applications  
Zero Voltage Switching SMPS  
Telecom and Server Power Supplies  
Uninterruptible Power Supplies  
Motor Control applications  
Lead-Free  
Trr typ.  
VDSS RDS(on) typ.  
0.28  
ID  
500V  
170ns 16A  
Features and Benefits  
SuperFast body diode eliminates the need for external  
diodes in ZVS applications.  
Lower Gate charge results in simpler drive requirements.  
Enhanced dv/dt capabilities offer improved ruggedness.  
Higher Gate voltage threshold offers improved noise  
immunity.  
TO-247AC  
Absolute Maximum Ratings  
Parameter  
Max.  
16  
Units  
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V  
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V  
11  
A
IDM  
64  
Pulsed Drain Current  
PD @TC = 25°C  
Power Dissipation  
220  
W
Linear Derating Factor  
Gate-to-Source Voltage  
1.8  
W/°C  
V
VGS  
± 30  
dv/dt  
TJ  
Peak Diode Recovery dv/dt  
Operating Junction and  
13  
V/ns  
-55 to + 150  
TSTG  
Storage Temperature Range  
°C  
Soldering Temperature, for 10 seconds  
Mounting torque, 6-32 or M3 screw  
300 (1.6mm from case )  
10lb in (1.1N m)  
Diode Characteristics  
Symbol  
Parameter  
Min. Typ. Max. Units  
Conditions  
I
Continuous Source Current  
––– ––– 16  
MOSFET symbol  
S
(Body Diode)  
A
showing the  
I
Pulsed Source Current  
––– ––– 64  
integral reverse  
SM  
(Body Diode)  
p-n junction diode.  
V
t
T = 25°C, I = 16A, V = 0V  
J S GS  
Diode Forward Voltage  
––– ––– 1.5  
––– 170 250  
––– 220 330  
V
SD  
T = 25°C, I = 16A  
Reverse Recovery Time  
Reverse Recovery Charge  
ns  
rr  
J
F
TJ = 125°C, di/dt = 100A/µs  
Q
T = 25°C, I = 16A, V = 0V  
––– 470 710 nC  
––– 810 1210  
rr  
J
S
GS  
TJ = 125°C, di/dt = 100A/µs  
IRRM  
T = 25°C  
J
Reverse Recovery Current  
Forward Turn-On Time  
––– 7.3  
11  
A
t
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)  
on  
www.irf.com  
1
07/30/04  
IRFP17N50LPbF  
Static @ TJ = 25°C (unless otherwise specified)  
Symbol  
V(BR)DSS  
Parameter  
Min. Typ. Max. Units  
Conditions  
VGS = 0V, ID = 250µA  
Drain-to-Source Breakdown Voltage  
Breakdown Voltage Temp. Coefficient  
Static Drain-to-Source On-Resistance  
Gate Threshold Voltage  
500  
–––  
–––  
3.0  
–––  
–––  
V
V(BR)DSS/TJ  
RDS(on)  
0.60  
–––  
V/°C Reference to 25°C, ID = 1mA  
0.28 0.32  
VGS = 10V, ID = 9.9A  
DS = VGS, ID = 250µA  
V
VGS(th)  
–––  
–––  
–––  
–––  
5.0  
50  
V
IDSS  
Drain-to-Source Leakage Current  
–––  
–––  
–––  
–––  
–––  
µA VDS = 500V, VGS = 0V  
2.0  
100  
mA VDS = 400V, VGS = 0V, TJ = 125°C  
IGSS  
Gate-to-Source Forward Leakage  
Gate-to-Source Reverse Leakage  
Internal Gate Resistance  
nA  
V
V
GS = 30V  
GS = -30V  
––– -100  
1.4 –––  
RG  
f = 1MHz, open drain  
Dynamic @ TJ = 25°C (unless otherwise specified)  
Symbol  
Parameter  
Forward Transconductance  
Total Gate Charge  
Min. Typ. Max. Units  
Conditions  
VDS = 50V, ID = 9.9A  
D = 16A  
nC VDS = 400V  
VGS = 10V, See Fig. 7 & 15  
VDD = 250V  
ns ID = 16A  
gfs  
Qg  
11  
–––  
–––  
–––  
–––  
21  
–––  
130  
33  
S
–––  
–––  
–––  
–––  
–––  
–––  
–––  
I
Qgs  
Qgd  
Gate-to-Source Charge  
Gate-to-Drain ("Miller") Charge  
Turn-On Delay Time  
Rise Time  
59  
td(on)  
–––  
–––  
–––  
–––  
tr  
51  
td(off)  
Turn-Off Delay Time  
Fall Time  
50  
RG = 7.5Ω  
VGS = 10V, See Fig. 14a & 14b  
VGS = 0V  
tf  
28  
Ciss  
Input Capacitance  
––– 2760 –––  
Coss  
Output Capacitance  
–––  
–––  
325  
37  
–––  
–––  
VDS = 25V  
Crss  
Reverse Transfer Capacitance  
Output Capacitance  
ƒ = 1.0MHz, See Fig. 5  
Coss  
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz  
VGS = 0V, VDS = 400V, ƒ = 1.0MHz  
––– 3690 –––  
pF  
Coss  
Output Capacitance  
–––  
–––  
–––  
84  
–––  
–––  
–––  
Coss eff.  
Coss eff. (ER)  
Effective Output Capacitance  
Effective Output Capacitance  
159  
120  
V
GS = 0V,VDS = 0V to 400V  
(Energy Related)  
Avalanche Characteristics  
Parameter  
Single Pulse Avalanche Energy  
Typ.  
–––  
–––  
–––  
Max.  
390  
16  
Units  
mJ  
A
Symbol  
EAS  
IAR  
Avalanche Current  
Repetitive Avalanche Energy  
EAR  
22  
mJ  
Thermal Resistance  
Symbol  
Parameter  
Typ.  
–––  
Max.  
0.56  
–––  
62  
Units  
RθJC  
Junction-to-Case  
RθCS  
Case-to-Sink, Flat, Greased Surface  
Junction-to-Ambient  
0.50  
–––  
°C/W  
RθJA  
Notes:  
 Repetitive rating; pulse width limited by  
max. junction temperature. (See Fig. 11)  
‚ Starting TJ = 25°C, L = 3.0mH, RG = 25,  
IAS = 16A. (See Figure 12).  
„ Pulse width 300µs; duty cycle 2%.  
Coss eff. is a fixed capacitance that gives the same charging time  
as Coss while VDS is rising from 0 to 80% VDSS  
Coss eff.(ER) is a fixed capacitance that stores the same energy  
as Coss while VDS is rising from 0 to 80% VDSS  
.
ƒ ISD = 16A, di/dt 347A/µs, VDD V(BR)DSS  
TJ 150°C.  
,
.
2
www.irf.com  
IRFP17N50LPbF  
100  
10  
100  
10  
1
VGS  
15V  
12V  
VGS  
15V  
12V  
TOP  
TOP  
10V  
10V  
8.0V  
7.0V  
6.0V  
5.5V  
8.0V  
7.0V  
6.0V  
5.5V  
BOTTOM 5.0V  
BOTTOM 5.0V  
5.0V  
1
5.0V  
0.1  
0.01  
20µs PULSE WIDTH  
Tj = 150°C  
20µs PULSE WIDTH  
Tj = 25°C  
0.1  
0.1  
1
10  
100  
0.1  
1
10  
100  
V
, Drain-to-Source Voltage (V)  
V
, Drain-to-Source Voltage (V)  
DS  
DS  
Fig 1. Typical Output Characteristics  
Fig 2. Typical Output Characteristics  
100  
3.0  
16A  
=
I
D
°
T = 150 C  
J
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
10  
°
T = 25 C  
J
1
V
= 50V  
DS  
20µs PULSE WIDTH  
V
=10V  
GS  
0.1  
4.0  
5.0  
6.0  
7.0  
8.0 9.0 10.0  
-60 -40 -20  
0
20 40 60 80 100 120 140 160  
°
V
, Gate-to-Source Voltage (V)  
T , Junction Temperature ( C)  
J
GS  
Fig 4. Normalized On-Resistance  
Fig 3. Typical Transfer Characteristics  
Vs. Temperature  
www.irf.com  
3
IRFP17N50LPbF  
20  
15  
10  
5
100000  
V
= 0V,  
f = 1 MHZ  
SHORTED  
gd ds  
GS  
C
= C + C , C  
iss  
gs  
C
= C  
gd  
rss  
C
= C + C  
oss  
ds gd  
10000  
1000  
100  
Ciss  
Coss  
Crss  
0
10  
0
100  
V
200  
300  
400  
500  
600  
1
10  
100  
1000  
V
, Drain-to-Source Voltage (V)  
DS  
Drain-to-Source Voltage (V)  
DS,  
Fig 5. Typical Capacitance Vs.  
Fig 6. Typ. Output Capacitance  
Drain-to-Source Voltage  
Stored Energy vs. VDS  
20  
16  
12  
8
100  
10  
1
I =  
D
16A  
V
V
V
= 400V  
= 250V  
= 100V  
DS  
DS  
DS  
°
T = 150 C  
J
°
T = 25 C  
J
4
V
= 0 V  
GS  
0
0.1  
0.2  
0
30  
60  
90  
120  
150  
0.6  
0.9  
1.3  
1.6  
Q , Total Gate Charge (nC)  
V
,Source-to-Drain Voltage (V)  
G
SD  
Fig 8. Typical Source-Drain Diode  
Fig 7. Typical Gate Charge Vs.  
Forward Voltage  
Gate-to-Source Voltage  
4
www.irf.com  
IRFP17N50LPbF  
RD  
20  
16  
12  
8
VDS  
VGS  
D.U.T.  
RG  
+VDD  
-
10V  
Pulse Width ≤ 1 µs  
Duty Factor ≤ 0.1 %  
Fig 10a. Switching Time Test Circuit  
4
V
DS  
90%  
0
25  
50  
75  
100  
125  
150  
°
T , Case Temperature ( C)  
C
10%  
V
GS  
t
t
r
t
t
f
Fig 9. Maximum Drain Current Vs.  
d(on)  
d(off)  
Case Temperature  
Fig 10b. Switching Time Waveforms  
1
D = 0.50  
0.20  
0.1  
0.10  
0.05  
0.02  
0.01  
SINGLE PULSE  
(THERMAL RESPONSE)  
P
2
DM  
0.01  
t
1
t
2
Notes:  
1. Duty factor D =t / t  
1
2. Peak T =P  
x Z  
+ T  
C
J
DM  
thJC  
0.001  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
t , Rectangular Pulse Duration (sec)  
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case  
www.irf.com  
5
IRFP17N50LPbF  
800  
640  
480  
320  
160  
0
1000  
I
D
OPERATION IN THIS AREA LIMITED  
TOP  
7A  
10A  
BOTTOM 16A  
BY R  
DS(on)  
100  
10us  
10  
1
100us  
1ms  
10ms  
°
T = 25 C  
C
J
°
T = 150 C  
Single Pulse  
0.1  
25  
50  
75  
100  
125  
150  
10  
100  
1000  
10000  
°
Starting T , Junction Temperature ( C)  
J
V
, Drain-to-Source Voltage (V)  
DS  
Fig 12. Maximum Safe Operating  
Fig 13. Maximum Avalanche Energy  
Area  
vs. Drain Current  
15V  
V
(BR)DSS  
t
p
DRIVER  
L
V
DS  
D.U.T  
AS  
R
G
+
-
V
DD  
I
A
20V  
0.01Ω  
t
p
I
AS  
Fig 14b. Unclamped Inductive Waveforms  
Fig 14a. Unclamped Inductive Test Circuit  
Current Regulator  
Same Type as D.U.T.  
Q
Q
G
50KΩ  
.2µF  
12V  
VGS  
.3µF  
Q
+
GS  
GD  
V
DS  
D.U.T.  
-
V
GS  
V
G
3mA  
I
I
D
G
Charge  
Current Sampling Resistors  
Fig 15a. Gate Charge Test Circuit  
Fig 15b. Basic Gate Charge Waveform  
6
www.irf.com  
IRFP17N50LPbF  
Peak Diode Recovery dv/dt Test Circuit  
+
Circuit Layout Considerations  
Low Stray Inductance  
Ground Plane  
Low Leakage Inductance  
Current Transformer  
D.U.T  
ƒ
-
+
‚
-
„
-
+

RG  
dv/dt controlled by RG  
+
-
Driver same type as D.U.T.  
ISD controlled by Duty Factor "D"  
D.U.T. - Device Under Test  
VDD  
Driver Gate Drive  
P.W.  
Period  
Period  
D =  
P.W.  
V
=10V  
*
GS  
D.U.T. I Waveform  
SD  
Reverse  
Recovery  
Current  
Body Diode Forward  
Current  
di/dt  
D.U.T. V Waveform  
DS  
Diode Recovery  
dv/dt  
V
DD  
Re-Applied  
Voltage  
Body Diode  
Forward Drop  
Inductor Curent  
I
SD  
Ripple 5%  
* VGS = 5V for Logic Level Devices  
Fig 16. For N-Channel HEXFET® Power MOSFETs  
www.irf.com  
7
IRFP17N50LPbF  
TO-247AC Package Outline Dimensions are shown in millimeters (inches)  
TO-247AC Part Marking Information  
EXAMPLE: THIS IS AN IRFPE30  
WIT H AS S E MB L Y  
PART NUMBER  
INTERNATIONAL  
RECTIFIER  
LOGO  
LOT CODE 5657  
IRFPE30  
035H  
57  
ASSEMBLED ON WW 35, 2000  
IN THE ASSEMBLY LINE "H"  
56  
DAT E CODE  
YEAR 0 = 2000  
WEEK 35  
Note: "P" in assembly line  
position indicates "Lead-Free"  
AS S E MB L Y  
LOT CODE  
LINE H  
Data and specifications subject to change without notice.  
This product has been designed and qualified for the Automotive [Q101] market.  
Qualification Standards can be found on IR’s Web site.  
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105  
TAC Fax: (310) 252-7903  
Visit us at www.irf.com for sales contact information.07/04  
8
www.irf.com  

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