IRG4PC30W-EPBF [INFINEON]
Insulated Gate Bipolar Transistor, 23A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-3P, 3 PIN;
| 型号： | IRG4PC30W-EPBF |
| 厂家： | 
Infineon |
| 描述： | Insulated Gate Bipolar Transistor, 23A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-3P, 3 PIN 局域网 栅 瞄准线 功率控制 晶体管 |
| 文件： | 总8页 (文件大小：123K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 91628A
IRG4PC30W
INSULATED GATE BIPOLAR TRANSISTOR
C
Features
• Designed expressly for Switch-Mode Power
Supply and PFC (power factor correction)
applications
VCES =600V
• Industry-benchmark switching losses improve
efficiency of all power supply topologies
• 50% reduction of Eoff parameter
V
CE(on) max. = 2.70V
G
@VGE = 15V, IC = 12A
E
• Low IGBT conduction losses
n-channel
• Latest-generation IGBT design and construction offers
tighter parameters distribution, exceptional reliability
Benefits
• Lower switching losses allow more cost-effective
operation than power MOSFETs up to 150 kHz
("hard switched" mode)
• Of particular benefit to single-ended converters and
boost PFC topologies 150W and higher
• Low conduction losses and minimal minority-carrier
recombination make these an excellent option for
resonant mode switching as well (up to >>300 kHz)
TO-247AC
Absolute Maximum Ratings
Parameter
Max.
Units
VCES
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
600
V
IC @ TC = 25°C
23
IC @ TC = 100°C
12
A
ICM
92
92
ILM
Clamped Inductive Load Current
Gate-to-Emitter Voltage
VGE
± 20
V
EARV
Reverse Voltage Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation
180
mJ
PD @ TC = 25°C
100
W
PD @ TC = 100°C
42
TJ
Operating Junction and
-55 to + 150
TSTG
Storage Temperature Range
°C
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
300 (0.063 in. (1.6mm from case )
10 lbf•in (1.1N•m)
Thermal Resistance
Parameter
Junction-to-Case
Typ.
–––
Max.
1.2
Units
°C/W
RθJC
RθCS
RθJA
Wt
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight
0.24
–––
40
–––
6 (0.21)
–––
g (oz)
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1
4/15/2000
IRG4PC30W
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
VGE = 0V, IC = 250µA
VGE = 0V, IC = 1.0A
V(BR)CES
V(BR)ECS
∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
600
—
—
—
—
V
V
Emitter-to-Collector Breakdown Voltage 18
—
—
—
—
3.0
—
11
—
—
—
—
0.34
2.1
2.45
1.95
—
—
V/°C VGE = 0V, IC = 1.0mA
2.7
—
IC = 12A
VGE = 15V
VCE(ON)
VGE(th)
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
IC = 23A
See Fig.2, 5
V
—
IC = 12A , TJ = 150°C
VCE = VGE, IC = 250µA
6.0
—
∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage
-11
16
mV/°C VCE = VGE, IC = 250µA
gfe
Forward Transconductance ꢀ
—
S
VCE = 100 V, IC = 12A
—
250
2.0
1000
VGE = 0V, VCE = 600V
ICES
Zero Gate Voltage Collector Current
µA
—
VGE = 0V, VCE = 10V, TJ = 25°C
VGE = 0V, VCE = 600V, TJ = 150°C
—
IGES
Gate-to-Emitter Leakage Current
—
±100 nA VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
IC = 12A
Qg
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
51
7.6
18
25
16
76
11
27
—
—
Qge
Qgc
td(on)
tr
nC
ns
VCC = 400V
VGE = 15V
See Fig.8
TJ = 25°C
td(off)
tf
Turn-Off Delay Time
Fall Time
99 150
67 100
IC = 12A, VCC = 480V
VGE = 15V, RG = 23Ω
Energy losses include "tail"
Eon
Eoff
Ets
td(on)
tr
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
0.13
0.13
—
—
mJ See Fig. 10, 11, 13, 14
0.26 0.35
24
17
—
—
—
—
—
—
—
—
—
TJ = 150°C,
IC = 12A, VCC = 480V
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
150
150
0.55
13
VGE = 15V, RG = 23Ω
Energy losses include "tail"
mJ See Fig. 13, 14
Ets
LE
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
nH
Measured 5mm from package
VGE = 0V
Cies
Coes
Cres
980
71
Output Capacitance
Reverse Transfer Capacitance
pF
VCC = 30V
See Fig. 7
18
ƒ = 1.0MHz
Notes:
Repetitive rating; VGE = 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
ꢀ
Pulse width ≤ 80µs; duty factor ≤ 0.1%.
VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 23Ω,
(See fig. 13a)
Pulse width 5.0µs, single shot.
Repetitive rating; pulse width limited by maximum
junction temperature.
2
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IRG4PC30W
40
30
20
10
0
F or both:
T ria ng ular w a ve :
D uty cycle: 50%
T
T
= 125°C
J
= 90°C
sink
G ate drive as specified
C la m p vo ltage :
8 0% o f rated
Po w e r D is sipa tion 24 W
=
Sq uare wave:
60 % of ra te d
volt age
Ideal diodes
A
0.1
1
10
100
f, Frequency (kHz)
Fig. 1 - Typical Load Current vs. Frequency
(For square wave, I=IRMS of fundamental; for triangular wave, I=IPK
)
100
10
1
100
°
T = 150 C
J
10
°
T = 150 C
°
T = 25 C
J
J
°
1
T = 25 C
J
V
= 50V
CC
V
= 15V
GE
20µs PULSE WIDTH
5µs PULSE WIDTH
0.1
5.0
6.0
7.0
8.0
9.0
10.0
11.0
1
10
V
, Gate-to-Emitter Voltage (V)
V
, Collector-to-Emitter Voltage (V)
GE
CE
Fig. 2 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
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3
IRG4PC30W
3.0
2.5
2.0
1.5
25
20
15
10
5
V
= 15V
V G E = 1 5 V
GE
80 us PULSE WIDTH
I
= 24 A
= 12 A
C
I
I
C
C
=
6 A
A
0
-60 -40 -20
0
20 40 60 80 100 120 140 160
25
50
75
100
125
150
°
T , Junction Temperature ( C)
J
T
, C ase Tem perature (°C )
C
Fig. 4 - Maximum Collector Current vs. Case
Fig. 5 - Collector-to-Emitter Voltage vs.
Temperature
JunctionTemperature
10
1
D = 0.50
0.20
0.10
P
DM
0.1
0.05
t
1
0.02
0.01
t
2
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t / t
1
2
2. Peak T =P
DM
x Z
+ T
thJC C
J
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig. 6-MaximumEffectiveTransientThermalImpedance,Junction-to-Case
4
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IRG4PC30W
2000
1500
1000
500
0
20
16
12
8
V
C
= 0V,
f = 1MHz
C SHORTED
ce
V
I
= 400V
= 12A
CC
C
GE
= C + C
ies
ge
gc
gc ,
C
= C
res
C
= C + C
oes
ce
gc
C
ies
C
C
oes
res
4
0
0
10
20
30
40
50
60
1
10
100
Q , Total Gate Charge (nC)
V
, Collector-to-Emitter Voltage (V)
G
CE
Fig. 7 - Typical Capacitance vs.
Fig. 8 - Typical Gate Charge vs.
Collector-to-EmitterVoltage
Gate-to-EmitterVoltage
10
0.5
0.4
0.3
0.2
0.1
0.0
23Ω
= 15V
= 480V
R
V
V
CC
=
V
V
T
= 480V
G
GE
CC
GE
J
= 15V
= 25
°
C
I
= 12A
C
I
=
24A
C
C
C
1
I
I
=
=
12A
6A
0.1
0.01
0
10
20
30
40
50
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
R , Gate Resistance (Ω)
T , Junction Temperature ( C )
J
G
Fig. 10 - Typical Switching Losses vs.
Fig. 9 - Typical Switching Losses vs. Gate
Junction Temperature
Resistance
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5
IRG4PC30W
1000
100
10
1.5
23Ω
=
V
T
= 20V
G E
R
T
G
J
°
= 150 C
= 125°C
J
V
= 480V
= 15V
CC
V
GE
1.0
0.5
0.0
SA FE O PERATING AREA
1
0.1
1
10
100
1000
0
5
10
15
20
25
30
V
, Collector-to-Emitter Voltage (V)
I
, Collector-to-emitter Current (A)
C
C E
Fig. 11 - Typical Switching Losses vs.
Fig. 12 - Turn-Off SOA
Collector-to-Emitter Current
6
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IRG4PC30W
L
D.U.T.
480V
4 X IC@25°C
V
*
RL
=
C
50V
0 - 480V
1000V
480µF
960V
* Driver same type as D.U.T.; Vc = 80% of Vce(max)
* Note: Due to the 50V pow er supply, pulse width and inductor
w ill increase to obtain rated Id.
Fig. 13b - Pulsed Collector
Fig. 13a - Clamped Inductive
Load Test Circuit
Current Test Circuit
I
C
L
Fig. 14a - Switching Loss
D.U.T.
D river*
V
C
Test Circuit
50V
1000V
* Driver same type
as D.U.T., VC = 480V
90%
10%
V
C
90%
Fig. 14b - Switching Loss
t
d(o ff)
Waveforms
10%
5%
I
C
t
f
t
r
t
d (o n)
t=5µs
E
E
o ff
o n
E
= (E
+E
)
off
ts
o n
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7
IRG4PC30W
Case Outline and Dimensions — TO-247AC
N O TE S :
-
D -
3.65 (.1 43 )
1
D IM E N S IO N S & T O LE R A N C IN G
5 .30 ( .20 9)
4 .70 ( .18 5)
15 .90 (.6 26)
3.55 (.1 40 )
P E R A N S I Y 14.5M , 1982.
C O N TR O LLIN G D IM E N S IO N : IN C H .
D IM E N S IO N S A R E S H O W N
M ILLIM E TE R S (IN C H E S ).
C O N FO R M S TO JE D E C O U TLIN E
T O -247AC .
15 .30 (.6 02)
M
0.25 (.01 0)
M
D
B
2
3
2.50 (.089)
1.50 (.059)
4
-
B -
-
A -
5.5 0 (.2 17)
4
20 .30 (.8 00)
19 .70 (.7 75)
5.5 0 (.2 17)
4.5 0 (.1 77)
2X
LE A D A S S IG N M E N T S
1
2
3
4
- G A T E
- C O LLE C TO R
- EM IT TE R
- C O LLE C TO R
1
2
3
-
C -
14 .80 (.583 )
14 .20 (.559 )
4.30 (.1 70)
3.70 (.1 45)
LO N G E R LE A D ED (20m m )
V E R S IO N A V A ILA B LE (TO -247A D )
T O O R D E R A D D "-E " S U FF IX
T O P A R T N U M B ER
*
*
2.40 ( .094)
2.00 ( .079)
2 X
0.80 (.03 1)
0.40 (.01 6)
1.40 (.056)
1.00 (.039)
0.25 (.010)
3X
3 X
2 .60 ( .10 2)
2 .20 ( .08 7)
M
S
A
C
5.45 (.2 15 )
3.40 (.1 3 3)
3.00 (.1 1 8)
2 X
CONFORMS TO JEDEC OUTLINE TO-247AC (TO-3P)
D im e n sion s in M illim e te rs a n d (In ch es )
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111
IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936
Data and specifications subject to change without notice. 4/00
8
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