IRG4PC40FD-E [INFINEON]
Insulated Gate Bipolar Transistor, 49A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN;
| 型号： | IRG4PC40FD-E |
| 厂家： | 
Infineon |
| 描述： | Insulated Gate Bipolar Transistor, 49A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN 超快软恢复二极管 快速软恢复二极管 局域网 栅 功率控制 晶体管 |
| 文件： | 总10页 (文件大小：313K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD 91464B
IRG4PC40FD
Fast CoPack IGBT
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
C
• Fast: Optimized for medium operating
frequencies ( 1-5 kHz in hard switching, >20
kHz in resonant mode).
VCES = 600V
V
CE(on) typ. = 1.50V
• Generation 4 IGBT design provides tighter
G
parameter distribution and higher efficiency than
Generation 3
• IGBT co-packaged with HEXFREDTM ultrafast,
ultra-soft-recovery anti-parallel diodes for use in
bridge configurations
@VGE = 15V, IC = 27A
E
n-channel
• Industry standard TO-247AC package
Benefits
• Generation -4 IGBT's offer highest efficiencies
available
• IGBT's optimized for specific application conditions
• HEXFRED diodes optimized for performance with
IGBT's . Minimized recovery characteristics require
less/no snubbing
• Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBT's
Absolute Maximum Ratings
TO-247AC
Parameter
Max.
600
Units
V
VCES
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
IC @ TC = 25°C
49
IC @ TC = 100°C
27
ICM
200
A
ILM
Clamped Inductive Load Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
200
IF @ TC = 100°C
15
IFM
200
VGE
± 20
160
V
PD @ TC = 25°C
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
W
PD @ TC = 100°C
65
TJ
-55 to +150
TSTG
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
°C
300 (0.063 in. (1.6mm) from case)
10 lbf•in (1.1 N•m)
Thermal Resistance
Parameter
Junction-to-Case - IGBT
Min.
------
------
------
-----
Typ.
------
------
0.24
Max.
0.77
1.7
Units
RθJC
RθJC
RθCS
RθJA
Wt
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
°C/W
------
40
-----
------
6 (0.21)
------
g (oz)
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1
12/30/00
IRG4PC40FD
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)CES
Collector-to-Emitter Breakdown Voltage 600 ---- ----
V
VGE = 0V, IC = 250µA
∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage ---- 0.70 ---- V/°C VGE = 0V, IC = 1.0mA
VCE(on)
Collector-to-Emitter Saturation Voltage
---- 1.50 1.7
---- 1.85 ----
---- 1.56 ----
3.0 ---- 6.0
IC = 27A
VGE = 15V
V
IC = 49A
See Fig. 2, 5
IC = 27A, TJ = 150°C
VCE = VGE, IC = 250µA
VGE(th)
Gate Threshold Voltage
∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage ---- -12 ---- mV/°C VCE = VGE, IC = 250µA
gfe
Forward Transconductance
9.2
----
12
----
S
VCE = 100V, IC = 27A
VGE = 0V, VCE = 600V
ICES
Zero Gate Voltage Collector Current
---- 250
µA
---- ---- 3500
---- 1.3 1.7
---- 1.2 1.6
VGE = 0V, VCE = 600V, TJ = 150°C
VFM
IGES
Diode Forward Voltage Drop
V
IC = 15A
See Fig. 13
IC = 15A, TJ = 150°C
VGE = ±20V
Gate-to-Emitter Leakage Current
---- ---- ±100 nA
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Qg
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
RiseTime
---- 100 150
IC = 27A
Qge
Qgc
td(on)
tr
----
----
15
35
23
53
nC
ns
VCC = 400V
VGE = 15V
TJ = 25°C
See Fig. 8
---- 63
---- 32
----
----
IC = 27A, VCC = 480V
td(off)
tf
Turn-Off Delay Time
FallTime
---- 230 350
---- 170 250
---- 0.95 ----
---- 2.01 ----
---- 2.96 4.0
VGE = 15V, RG = 10Ω
Energy losses include "tail" and
diode reverse recovery.
See Fig. 9, 10, 11, 18
Eon
Eoff
Ets
td(on)
tr
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
RiseTime
mJ
ns
---- 63
---- 33
----
----
TJ = 150°C, See Fig. 9, 10, 11, 18
IC = 27A, VCC = 480V
td(off)
tf
Turn-Off Delay Time
FallTime
---- 350 ----
---- 310 ----
---- 4.7 ----
VGE = 15V, RG = 10Ω
Energy losses include "tail" and
diode reverse recovery.
Measured 5mm from package
VGE = 0V
E
ts
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
mJ
nH
LE
----
13
----
Cies
Coes
Cres
trr
---- 2200 ----
---- 140 ----
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
pF
ns
A
VCC = 30V
See Fig. 7
---- 29
---- 42
----
60
ƒ = 1.0MHz
TJ = 25°C See Fig.
---- 74 120
Diode Peak Reverse Recovery Current ---- 4.0 6.0
---- 6.5 10
TJ = 125°C
TJ = 25°C See Fig.
TJ = 125°C 15
TJ = 25°C See Fig.
TJ = 125°C 16
14
IF = 15A
Irr
VR = 200V
Qrr
Diode Reverse Recovery Charge
---- 80 180
---- 220 600
nC
di/dt 200A/µs
di(rec)M/dt
Diode Peak Rate of Fall of Recovery
During tb
---- 188 ---- A/µs TJ = 25°C See Fig.
---- 160 ---- TJ = 125°C 17
2
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IRG4PC40FD
40
30
20
10
0
Duty cycle: 50%
T
T
= 125°C
J
= 90°C
sink
G ate drive as specified
Turn-on losses include
effects of reverse recovery
Power Dissipation = 35W
60% of rated
voltage
A
0.1
1
10
100
f, Frequency (kHz)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
1000
1000
100
10
TJ = 25°C
100
TJ = 150°C
TJ = 150°C
TJ = 25°C
10
V C C = 50V
5µs PULSE WIDTH
VG E = 15V
20µs PULSE W IDTH
A
A
1
1
5
6
7
8
9
10
11
12
1
10
V
, Gate-to-Emitter Voltage (V)
V
, Collector-to-Emitter Voltage (V)
GE
CE
Fig. 3 - Typical Transfer Characteristics
Fig. 2 - Typical Output Characteristics
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3
IRG4PC40FD
50
2.5
2.0
1.5
1.0
V
= 15V
G E
VG E = 15V
80µs PULSE WIDTH
IC = 54A
40
30
20
10
0
IC = 27A
I C = 14A
A
25
50
75
100
125
150
-60
-40
-20
0
20
40
60
80
100 120 140 160
TC , Case Temperature (°C)
T
, Junction Temperature (°C)
J
Fig. 4 - Maximum Collector Current vs. Case
Fig. 5 - Typical Collector-to-Emitter Voltage
Temperature
vs.JunctionTemperature
1
D = 0.50
0.20
0.1
0.10
P
DM
0.05
t
1
SINGLE PULSE
(THERMAL RESPONSE)
t
2
0.02
0.01
N otes:
1 . D uty factor D
=
t
/ t
2
1
Z
2. Pea k T
0.1
=
P
x
+ T
C
DM
J
thJC
1
0.01
0.00001
0.0001
0.001
0.01
10
t1 , Rectangular Pulse Duration (sec)
Fig. 6-MaximumEffectiveTransientThermalImpedance,Junction-to-Case
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4
IRG4PC40FD
4000
3000
2000
1000
0
20
16
12
8
VGE = 0V
f = 1 MHz
VC E = 400V
IC = 27A
Cies = Cge + Cgc + Cce
Cres = Cce
SHORTED
Coes = Cce + Cgc
C
ies
C
C
oes
res
4
A
A
0
0
20
40
60
80
100
120
1
10
100
Q
, Total Gate Charge (nC)
V
, Collector-to-Emitter Voltage (V)
g
CE
Fig. 7 - Typical Capacitance vs.
Fig. 8 - Typical Gate Charge vs.
Collector-to-Emitter Voltage
Gate-to-Emitter Voltage
100
10
1
3.3
3.2
3.1
3.0
RG = 10
V G E = 15V
VC C = 480V
VC C = 480V
VG E = 15V
Ω
TJ
= 25°C
IC = 27A
I C = 54A
I C = 27A
IC = 14A
A
A
0.1
0
10
20
30
40
50
60
-60
-40
-20
0
20
40
60
80
100 120 140 160
T
, Junction Temperature (°C)
R
, Gate Resistance (
)
Ω
J
G
Fig. 9 - Typical Switching Losses vs. Gate
Fig. 10 - Typical Switching Losses vs.
Resistance
Junction Temperature
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5
IRG4PC40FD
1000
100
10
12
V
T
= 20V
= 125°C
RG = 10
G E
J
Ω
T J
= 150°C
VC C = 480V
V G E = 15V
10
8
SAFE OPE RA TING ARE A
6
4
2
A
1
0
1
10
100
1000
0
10
20
30
40
50
60
V
, Collector-to-Emitter Voltage (V)
I
, Collector-to-Emitter Current (A)
C E
C
Fig. 12 - Turn-Off SOA
Fig. 11 - Typical Switching Losses vs.
Collector-to-Emitter Current
100
10
1
T
T
T
= 150°C
= 125°C
J
J
J
=
25°C
0.8
1.2
1.6
2.0
2.4
Forward Voltage Drop - V
(V)
FM
Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current
6
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IRG4PC40FD
100
10
1
100
VR = 200V
TJ = 125°C
TJ = 25°C
VR = 200V
T J = 125°C
T J = 25°C
80
I
= 30A
F
I
= 30A
F
I
= 15A
F
60
I
= 15A
F
I
= 5.0A
F
40
I
= 5.0A
F
20
100
1000
100
1000
di /dt - (A/µs)
f
di /dt - (A/µs)
f
Fig. 15 - Typical Recovery Current vs. dif/dt
Fig. 14- Typical Reverse Recovery vs. dif/dt
800
1000
VR = 200V
TJ = 125°C
TJ = 25°C
VR = 200V
TJ = 125°C
TJ = 25°C
600
I
= 30A
F
I
= 5.0A
F
400
200
0
I
= 15A
I
= 15A
F
F
I
= 30A
F
I
= 5.0A
F
100
100
100
1000
1000
di /dt - (A/µs)
di /dt - (A/µs)
f
f
Fig. 16 - Typical Stored Charge vs. dif/dt
Fig. 17 - Typical di(rec)M/dt vs. dif/dt
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7
IRG4PC40FD
90% Vge
+Vge
Same type
device as
D.U.T.
Vce
90% Ic
10% Vce
Ic
Ic
430µF
80%
5% Ic
of Vce
D.U.T.
td(off)
tf
t1+5µS
Eoff =
Vce ic dt
∫
t1
Fig. 18a - Test Circuit for Measurement of
I
LM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf
t1
t2
Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining
Eoff, td(off), tf
trr
id dt
trr
G ATE VO LTA G E D .U .T.
Q rr =
Ic
∫
tx
10% +Vg
+Vg
tx
10% Irr
10% Vcc
Vcc
D UT VO LTAG E
AN D CU RRE NT
Vce
V pk
Irr
10% Ic
Vcc
Ipk
90% Ic
Ic
DIO DE RE CO V ERY
W AVEFO RMS
5% Vce
tr
td(on)
t2
Vce ie dt
E on =
t4
∫
Erec = Vd id dt
t1
∫
t3
DIO DE REVE RSE
REC O VERY ENER G Y
t1
t2
t3
t4
Fig. 18d - Test Waveforms for Circuit of Fig. 18a,
Fig. 18c - Test Waveforms for Circuit of Fig. 18a,
Defining Erec, trr, Qrr, Irr
Defining Eon, td(on), tr
8
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IRG4PC40FD
Vg
G ATE SIG NAL
DEVICE U NDE R TEST
CUR REN T D .U .T.
VO LTAG E IN D.U.T.
CUR REN T IN D1
t0
t1
t2
Figure 18e. Macro Waveforms for Figure 18a's Test Circuit
480V
4 X IC @25°C
L
D.U.T.
RL=
1000V
V *
c
0 - 480V
50V
6000µF
100 V
Figure 20. Pulsed Collector Current
Test Circuit
Figure 19. Clamped Inductive Load Test
Circuit
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9
IRG4PC40FD
Notes:
Repetitive rating: VGE=20V; pulse width limited by maximum junction temperature (figure 20)
VCC=80%(VCES), VGE=20V, L=10µH, RG = 10Ω (figure 19)
Pulse width ≤ 80µs; duty factor ≤ 0.1%.
Pulse width 5.0µs, single shot.
Case Outline TO-247AC
N O T E S :
-
D -
3.65 ( .14 3)
3.55 ( .14 0)
0.2 5 (.0 1 0)
1
D IM E N S IO N S & TO LE R A N C IN G
5.30 ( .20 9 )
4.70 ( .18 5 )
1 5.90 (.62 6)
1 5.30 (.60 2)
P E R A N S I Y 14.5M , 1982.
C O N T R O LLIN G D IM E N S IO N : IN C H .
D IM E N S IO N S A R E S H O W N
M ILLIM E T E R S (IN C H E S ).
C O N F O R M S T O JE D E C O U T LIN E
T O -247A C .
M
M
D
B
2
3
2.5 0 (.0 89)
-
B -
-
A -
1.5 0 (.0 59)
4
5.5 0 (.2 17)
4
2 0.3 0 (.80 0)
1 9.7 0 (.77 5)
5.50 (.2 17)
4.50 (.1 77)
2 X
LE A D A S S IG N M E N T S
1
2
3
4
- G A T E
- C O LLE C TO R
- E M IT T E R
- C O LLE C TO R
1
2
3
-
C -
1 4 .80 ( .58 3)
1 4 .20 ( .55 9)
4.3 0 (.1 70)
3.7 0 (.1 45)
*
L O N G E R LE A D E D (20m m )
V E R S IO N A V A ILA B LE (TO -247A D )
T O O R D E R A D D "-E " S U FF IX
T O P A R T N U M B E R
*
2.40 ( .09 4)
2.00 ( .07 9)
2 X
0.80 (.03 1)
1.4 0 (.0 56)
1.0 0 (.0 39)
0.25 (.0 10)
3X
3 X
0.40 (.01 6)
M
S
2 .6 0 (.10 2)
2 .2 0 (.08 7)
A
C
5 .4 5 (.21 5)
3.40 (.13 3)
3.00 (.11 8)
2 X
CONFORMS TO JEDEC OUTLINE TO-247AC (TO-3P)
D im e n sio n s in M illim ete rs a n d (In ch e s)
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 12/00
10
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