IRG7PG42UDPBF [INFINEON]
INSULATED GATE BIPOLAR TRANSISTOR;
| 型号： | IRG7PG42UDPBF |
| 厂家： | 
Infineon |
| 描述： | INSULATED GATE BIPOLAR TRANSISTOR |
| 文件： | 总11页 (文件大小：575K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IRG7PG42UDPbF
IRG7PG42UD-EPbF
INSULATED GATE BIPOLAR TRANSISTOR
Features
Low VCE (ON) trench IGBT technology
Low switching losses
Square RBSOA
100% of the parts tested for ILM
Positive VCE (ON) temperature co-efficient
Ultra fast soft recovery co-pak diode
Tight parameter distribution
Lead-free package
C
C
Benefits
High efficiency in a wide range of applications
Suitable for a wide range of switching frequencies
due to low VCE(on) and low switching losses
Rugged transient performance for increased reliability
Excellent current sharing in parallel operation
E
E
C
G
C
G
IRG7PG42UDPbF
TO-247AC
IRG7PG42UD-EPbF
TO-247AD
Applications
U.P.S.
Welding
Solar Inverter
Induction heating
G
Gate
C
E
Collector
Emitter
Base part number
Package Type
Standard Pack
Form
Orderable Part Number
Quantity
IRG7PG42UDPbF
IRG7PG42UD-EPbF
TO-247AC
TO-247AD
Tube
Tube
25
25
IRG7PG42UDPbF
IRG7PG42UD-EPbF
Absolute Maximum Ratings
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current (Silicon Limited)
Max.
Units
V
VCES
IC @ TC = 25°C
1000
85
45
IC @ TC = 100°C Continuous Collector Current (Silicon Limited)
ICM
ILM
Pulse Collector Current, VGE = 15V
Clamped Inductive Load Current, VGE = 20V
Diode Continuous Forward Current
90
120
85
A
IF @ TC = 25°C
IF @ TC = 100°C Diode Continuous Forward Current
45
IFM
Diode Maximum Forward Current
120
VGE
Continuous Gate-to-Emitter Voltage
±30
V
PD @ TC = 25°C Maximum Power Dissipation
PD @ TC = 100°C Maximum Power Dissipation
320
130
W
TJ
Operating Junction and
-55 to +150
TSTG
Storage Temperature Range
Soldering Temperature, for 10 sec.
°C
300 (0.063 in.(1.6mm) from case)
10 lbf·in (1.1 N·m)
Mounting Torque, 6-32 or M3 Screw
Thermal Resistance
Parameter
Min.
–––
–––
–––
–––
Typ.
–––
–––
0.24
–––
Max.
0.39
0.56
–––
40
Units
RθJC (IGBT) Junction-to-Case (IGBT)
RθJC (Diode) Junction-to-Case (Diode)
°C/W
RθCS
RθJA
Case-to-Sink (flat, greased surface)
Junction-to-Ambient (typical socket mount)
1
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IRG7PG42UDPbF/IRG7PG42UD-EPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
1000
—
Typ.
—
Max. Units
Conditions
V(BR)CES
Collector-to-Emitter Breakdown Voltage
Temperature Coeff. of Breakdown Voltage
Collector-to-Emitter Saturation Voltage
—
—
V
VGE = 0V, IC = 100µA
0.18
1.7
2.1
—
V/°C VGE = 0V, IC = 2.0mA (25°C-150°C)
V(BR)CES/TJ
VCE(on)
—
—
2.0
—
V
IC = 30A, VGE = 15V, TJ = 25°C
IC = 30A, VGE = 15V, TJ = 150°C
VCE = VGE, IC = 1.0mA
VGE(th)
Gate Threshold Voltage
3.0
—
6.0
—
V
Threshold Voltage temp. coefficient
Forward Transconductance
-14
32
mV/°C VCE=VGE, IC = 1.0mA (25°C - 150°C)
VGE(th)/TJ
gfe
—
—
S
V
CE = 50V, IC = 30A, PW = 80µs
VGE = 0V, VCE = 1000V
GE = 0V, VCE = 1000V, TJ = 150°C
ICES
Collector-to-Emitter Leakage Current
—
4.4
1200
2.0
2.2
—
100
—
µA
—
V
VFM
IGES
Diode Forward Voltage Drop
—
—
2.4
—
V
IF = 30A
IF = 30A, TJ = 150°C
Gate-to-Emitter Leakage Current
—
±100
nA VGE = ±30V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Total Gate Charge
Min.
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
157
21
Max. Units
Conditions
Qg
—
IC = 30A
nC
µJ
ns
VGE = 15V
Qge
Qgc
Eon
Eoff
Etotal
td(on)
tr
Gate-to-Emitter Charge
Gate-to-Collector Charge
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
VCC = 600V
69
2105
1182
3287
25
IC = 30A, VCC = 600V, VGE = 15V
RG = 10, L = 200µH, TJ = 25°C
Energy losses include tail & diode
reverse recovery
32
td(off)
tf
Turn-Off delay time
Fall time
229
63
Eon
Eoff
Etotal
td(on)
tr
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
2978
1968
4946
19
µJ
ns
IC = 30A, VCC = 600V, VGE = 15V
RG = 10, L = 200µH, TJ = 150°C
Energy losses include tail & diode
reverse recovery
32
td(off)
tf
Turn-Off delay time
Fall time
290
154
3338
124
75
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGE = 0V
pF
VCC = 30V
f = 1.0Mhz
TJ = 150°C, IC = 120A
RBSOA
Reverse Bias Safe Operating Area
FULL SQUARE
VCC = 800V, Vp ≤ 1000V
Rg = 10, VGE = +20V to 0V
Erec
trr
Reverse Recovery Energy of the Diode
Diode Reverse Recovery Time
—
—
—
1475
153
34
—
µJ
ns
A
TJ = 150°C
VCC = 600V, IF = 30A
—
—
Irr
Peak Reverse Recovery Current
Rg = 10L = 1.0mH
Notes:
VCC = 80% (VCES), VGE = 20V, L = 22µH, RG = 10.
Pulse width limited by max. junction temperature.
Refer to AN-1086 for guidelines for measuring V(BR)CES safely.
R is measured at TJ of approximately 90°C.
Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 78A. Note
that current limitations arising from heating of the device leads may occur with some lead mounting arrangements.
2
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IRG7PG42UDPbF/IRG7PG42UD-EPbF
60
50
40
30
20
10
0
For both:
Duty cycle : 50%
Tj = 150°C
Tsink = 90°C
Gate drive as specified
Power Dissipation = 95W
0.1
1
10
100
f , Frequency ( kHz )
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
350
100
80
60
40
20
0
300
250
200
150
100
50
0
0
20
40
60
80 100 120 140 160
(°C)
25
50
75
100
(°C)
125
150
175
T
C
T
C
Fig. 3 - Power Dissipation vs.
Fig. 2 - Maximum DC Collector Current vs.
Case Temperature
Case Temperature
1000
100
10
1000
100
10µsec
10
100µsec
1msec
DC
1
Tc = 25°C
Tj = 150°C
Single Pulse
1
0.1
10
100
1000
10000
1
10
100
(V)
1000
10000
V
(V)
V
CE
CE
Fig. 5 - Reverse Bias SOA
TJ = 150°C; VGE = 20V
Fig. 4 - Forward SOA
TC = 25°C, TJ ≤ 150°C; VGE = 15V
3
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IRG7PG42UDPbF/IRG7PG42UD-EPbF
120
100
80
60
40
20
0
120
V
= 18V
V
= 18V
GE
GE
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
100
80
60
40
20
0
0
2
4
6
8
10
0
2
4
6
8
10
V
(V)
V
(V)
CE
CE
Fig. 6 - Typ. IGBT Output Characteristics
Fig. 7 - Typ. IGBT Output Characteristics
TJ = -40°C; tp = 80µs
TJ = 25°C; tp = 80µs
120
100
80
60
40
20
0
120
V
= 18V
GE
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
100
80
60
40
20
0
-40°C
25°C
150°C
0
2
4
6
8
10
0.0
1.0
2.0
3.0
(V)
4.0
5.0
6.0
V
(V)
V
CE
F
Fig. 9 - Typ. Diode Forward Voltage Drop
Fig. 8 - Typ. IGBT Output Characteristics
Characteristics
TJ = 150°C; tp = 80µs
12
12
10
8
10
8
I
I
I
= 15A
= 30A
= 60A
CE
CE
CE
I
I
I
= 15A
= 30A
= 60A
CE
CE
CE
6
6
4
4
2
2
0
0
4
8
12
16
20
4
8
12
16
20
V
(V)
V
(V)
GE
GE
Fig. 10 - Typical VCE vs. VGE
Fig. 11 - Typical VCE vs. VGE
TJ = -40°C
TJ = 25°C
4
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IRG7PG42UDPbF/IRG7PG42UD-EPbF
12
10
8
120
100
80
I
I
I
= 15A
= 30A
= 60A
CE
CE
CE
T
= 25°C
60
40
20
0
J
6
T
= 150°C
J
4
2
0
4
6
8
10
12
4
8
12
16
20
V
, Gate-to-Emitter Voltage (V)
V
(V)
GE
GE
Fig. 13 - Typ. Transfer Characteristics
Fig. 12 - Typical VCE vs. VGE
VCE = 50V
TJ = 150°C
7000
6000
5000
4000
3000
2000
1000
0
1000
100
10
t
F
td
OFF
E
ON
t
E
R
OFF
td
ON
0
10
20
30
(A)
40
50
60
0
10
20
30
(A)
40
50
60
I
I
C
C
Fig. 14 - Typ. Energy Loss vs. IC
Fig. 15 - Typ. Switching Time vs. IC
TJ = 150°C; L = 200µH; VCE = 600V, RG = 10; VGE = 15V
TJ = 150°C; L = 200µH; VCE = 600V, RG = 10; VGE = 15V
10000
6000
5000
1000
td
E
OFF
ON
4000
E
OFF
t
F
3000
2000
1000
100
t
R
td
ON
10
0
20
40
60
()
80
100
0
20
40
60
()
80
100
R
R
G
G
Fig. 17 - Typ. Switching Time vs. RG
TJ = 150°C; L = 200µH; VCE = 600V, ICE = 30A; VGE = 15V
Fig. 16 - Typ. Energy Loss vs. RG
TJ = 150°C; L = 200µH; VCE = 600V, ICE = 30A; VGE = 15V
5
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IRG7PG42UDPbF/IRG7PG42UD-EPbF
50
40
30
20
10
40
R
G =
35
30
25
20
R
R
G =
G =
R
G =
15 20 25 30 35 40 45 50 55 60
(A)
0
20
40
60
80
100
I
R
(
F
G
Fig. 19 - Typ. Diode IRR vs. RG
Fig. 18 - Typ. Diode IRR vs. IF
TJ = 150°C
TJ = 150°C
9000
8000
7000
6000
5000
4000
3000
2000
40
35
30
25
20
60A
30A
15A
0
200 400 600 800 1000 1200 1400
0
200
400
600
800 1000 1200
di /dt (A/µs)
F
di /dt ( A/µs)
F
Fig. 20 - Typ. Diode IRR vs. diF/dt
Fig. 21 - Typ. Diode QRR vs. diF/dt
VCC = 600V; VGE = 15V; IF = 30A; TJ = 150°C
VCC = 600V; VGE = 15V; TJ = 150°C
3500
= 5.0
R
G
R
= 10
3000
2500
2000
1500
1000
500
G
R
=
=
47
G
R
100
G
15 20 25 30 35 40 45 50 55 60
(A)
I
F
Fig. 22 - Typ. Diode ERR vs. IF
TJ = 150°C
6
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IRG7PG42UDPbF/IRG7PG42UD-EPbF
16
10000
1000
100
14
12
10
8
V
V
= 600V
= 400V
CES
CES
Cies
6
Coes
4
2
Cres
200
0
10
0
20 40 60 80 100 120 140 160 180
, Total Gate Charge (nC)
0
100
300
(V)
400
500
600
Q
V
G
CE
Fig. 23 - Typ. Capacitance vs. VCE
Fig. 24 - Typical Gate Charge vs. VGE
VGE= 0V; f = 1MHz
ICE = 30A
1
D = 0.50
0.1
0.20
0.10
0.05
Ri (°C/W)
0.1306
0.1752
0.0814
0.0031
i (sec)
0.000313
0.002056
0.008349
0.043100
R1
R1
R2
R2
R3
R3
R4
R4
0.01
0.02
J J
CC
1 1
0.01
2 2
3 3
4 4
Ci= iRi
Ci= iRi
0.001
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
SINGLE PULSE
( THERMAL RESPONSE )
0.0001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t
, Rectangular Pulse Duration (sec)
1
Fig. 25 - Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
1
D = 0.50
0.20
0.10
0.05
0.1
0.01
Ri (°C/W)
0.1254
0.0937
0.1889
0.1511
i (sec)
0.000515
0.000515
0.001225
0.018229
R1
R1
R2
R2
R3
R3
R4
R4
J J
CC
0.02
0.01
1 1
2 2
3 3
4 4
Ci= iRi
Ci= iRi
0.001
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t
, Rectangular Pulse Duration (sec)
1
Fig. 26 - Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)
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IRG7PG42UDPbF/IRG7PG42UD-EPbF
L
L
80 V
+
-
VCC
DUT
0
DUT
VCC
1K
Rg
Fig.C.T.2 - RBSOA Circuit
Fig.C.T.1 - Gate Charge Circuit (turn-off)
diode clamp /
DUT
C force
100K
L
D1 22K
-5V
C sense
DUT /
DRIVER
VCC
DUT
G force
0.0075µF
Rg
E sense
E force
Switching Loss
Fig.C.T.3 - Switching Loss Circuit
Fig.C.T.4 - BVCES Filter Circuit
900
800
700
600
500
400
300
200
100
0
90
80
70
60
50
40
30
20
10
0
tf
90% ICE
5% VCE
5% ICE
Eof f Lo s s
-100
-0.5
-10
0
0.5
1
1.5
2
time(µs)
Fig. WF1 - Typ. Turn-off Loss Waveform
@ TJ = 150°C using Fig. CT.3
8
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IRG7PG42UDPbF/IRG7PG42UD-EPbF
TO-247AC Package Outline
Dimensions are shown in millimeters (inches)
TO-247AC Part Marking Information
Notes: This part marking information applies to devices produced after 02/26/2001
EXAMPLE: THIS IS AN IRFPE30
WITH ASSEMBLY
PART NUMBER
INTERNATIONAL
LOT CODE 5657
IRFPE30
RECTIFIER
ASSEMBLED ON WW 35, 2001
IN THE ASSEMBLY LINE "H"
135H
LOGO
56
57
DATE CODE
YEAR 1 = 2001
WEEK 35
ASSEMBLY
LOT CODE
Note: "P" in assembly line position
indicates "Lead-Free"
LINE H
TO-247AC package is not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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9
April 29, 2014
IRG7PG42UDPbF/IRG7PG42UD-EPbF
TO-247AD Package Outline
Dimensions are shown in millimeters (inches)
TO-247AD Part Marking Information
E X A M P L E : T H IS IS A N IR G P 3 0 B 1 2 0 K D -E
W IT H A S S E M B L Y
P A R T N U M B E R
IN T E R N A T IO N A L
L O T C O D E 5 6 5 7
R E C T IF IE R
L O G O
A S S E M B L E D O N W W 3 5 , 2 0 0 0
IN T H E A S S E M B L Y L IN E "H "
0 3 5 H
5 6
5 7
D A T E C O D E
Y E A R 2 0 0 0
W E E K 3 5
L IN E
0
=
A S S E M B L Y
L O T C O D E
N o te : "P " in a s s e m b ly lin e p o s itio n
in d ic a te s "L e a d -F re e "
H
TO-247AD package is not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
10
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IRG7PG42UDPbF/IRG7PG42UD-EPbF
Qualification Information†
Qualification Level
Industrial
(per JEDEC JESD47F) ††
TO-247AC
TO-247AD
N/A
Moisture Sensitivity Level
N/A
Yes
RoHS Compliant
†
Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/
†† Applicable version of JEDEC standard at the time of product release.
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
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April 29, 2014
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