IRG7PH28UD1MPBF [INFINEON]
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE;
| 型号： | IRG7PH28UD1MPBF |
| 厂家： | 
Infineon |
| 描述： | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE |
| 文件： | 总10页 (文件大小：398K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IRG7PH28UD1PbF
IRG7PH28UD1MPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE
FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS
Features
Low VCE (ON) trench IGBT technology
Low switching losses
Square RBSOA
Ultra-low VF diode
1300Vpk repetitive transient capacity
100% of the parts tested for ILM
Positive VCE (ON) temperature co-efficient
Tight parameter distribution
Lead-free package
G
Benefits
E
C
G
Device optimized for induction heating and soft switching
applications
High efficiency due to low VCE(ON), low switching losses and
ultra-low VF
IRG7PH28UD1MPbF
TO-247AD
Rugged transient performance for increased reliability
Excellent current sharing in parallel operation
Low EMI
G
Gate
C
E
Collector
Emitter
Base part number
Package Type
Standard Pack
Form
Orderable Part Number
Quantity
IRG7PH28UD1PbF
IRG7PH28UD1MPbF
TO-247AC
TO-247AD
Tube
Tube
25
25
IRG7PH28UD1PbF
IRG7PH28UD1MPbF
Absolute Maximum Ratings
Parameter
Collector-to-Emitter Voltage
Repetitive Transient Collector-to-Emitter Voltage
Max.
1200
1300
30
Units
V
VCES
V(BR) Transient
IC @ TC = 25°C Continuous Collector Current
IC @ TC = 100°C Continuous Collector Current
15
ICM
ILM
Pulse Collector Current, VGE = 15V
Clamped Inductive Load Current, VGE = 20V
100
60
A
IF @ TC = 25°C Diode Continuous Forward Current
IF @ TC = 100°C Diode Continuous Forward Current
30
15
IFM
Diode Maximum Forward Current
60
VGE
Continuous Gate-to-Emitter Voltage
±30
V
PD @ TC = 25°C Maximum Power Dissipation
PD @ TC = 100°C Maximum Power Dissipation
115
46
W
TJ
Operating Junction and
-55 to +150
TSTG
Storage Temperature Range
Soldering Temperature, for 10 sec.
°C
300
(0.063 in.(1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw
10 lbf·in (1.1 N·m)
1
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© 2012 International Rectifier
January 8, 2013
IRG7PH28UD1PbF/IRG7PH28UD1MPbF
Thermal Resistance
Parameter
Min.
–––
–––
–––
–––
Typ.
–––
–––
0.24
–––
Max.
1.09
1.35
–––
40
Units
RθJC (IGBT) Junction-to-Case (IGBT)
RθJC (Diode) Junction-to-Case (Diode)
°C/W
RθCS
RθJA
Case-to-Sink (flat, greased surface)
Junction-to-Ambient (typical socket mount)
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
1200
—
Typ.
—
Max. Units
Conditions
VGE = 0V, IC = 100µA
V/°C VGE = 0V, IC = 1mA (25°C-150°C)
V(BR)CES
Collector-to-Emitter Breakdown Voltage
Temperature Coeff. of Breakdown Voltage
Collector-to-Emitter Saturation Voltage
—
—
V
1.4
1.95
2.4
—
V(BR)CES/TJ
VCE(on)
—
—
2.30
—
V
IC = 15A, VGE = 15V, TJ = 25°C
IC = 15A, VGE = 15V, TJ = 150°C
VCE = VGE, IC = 350µA
VGE(th)
gfe
Gate Threshold Voltage
3.0
—
6.0
—
V
S
Forward Transconductance
Collector-to-Emitter Leakage Current
13
V
CE = 50V, IC = 15A, PW = 20µs
VGE = 0V, VCE = 1200V
GE = 0V, VCE = 1200V, TJ = 150°C
ICES
—
1.0
100
1.1
1.0
—
100
—
µA
—
V
VFM
IGES
Diode Forward Voltage Drop
—
—
1.2
—
V
IF = 15A
IF = 15A, TJ = 150°C
Gate-to-Emitter Leakage Current
—
±100
nA VGE = ±30V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Total Gate Charge (turn-on)
Gate-to-Emitter Charge (turn-on)
Gate-to-Collector Charge (turn-on)
Turn-Off Switching Loss
Min.
—
Typ.
60
Max. Units
Conditions
Qg
90
IC = 15A
nC VGE = 15V
VCC = 600V
Qge
Qgc
Eoff
—
10
15
40
—
27
—
543
766
µJ
ns
µJ
ns
IC = 15A, VCC = 600V, VGE = 15V
RG = 22, L = 1.0mH, TJ = 25°C
Energy losses include tail & diode
reverse recovery
td(off)
tf
Turn-Off delay time
Fall time
—
—
—
229
62
—
—
—
Eoff
Turn-Off Switching Loss
939
IC = 15A, VCC = 600V, VGE=15V
RG = 22, L = 1.0mH, TJ = 150°C
Energy losses include tail & diode
reverse recovery
td(off)
tf
Turn-Off delay time
Fall time
—
—
—
—
—
272
167
1160
55
—
—
—
—
—
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGE = 0V
pF VCC = 30V
f = 1.0Mhz
30
TJ = 150°C, IC = 60A
RBSOA
Reverse Bias Safe Operating Area
FULL SQUARE
VCC = 960V, Vp ≤ 1200V
Rg = 22, VGE = +20V to 0V
Notes:
VCC = 80% (VCES), VGE = 20V, L = 25µH, RG = 22.
Pulse width limited by max. junction temperature.
Refer to AN-1086 for guidelines for measuring V(BR)CES safely.
R is measured at TJ of approximately 90°C.
FBSOA operating conditions only.
VGE = 0V, TJ = 75°C, PW ≤ 10µs.
2
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© 2012 International Rectifier
January 8, 2013
IRG7PH28UD1PbF/IRG7PH28UD1MPbF
120
100
80
60
40
20
0
30
25
20
15
10
5
0
25
50
75
100
(°C)
125
150
25
50
75
100
(°C)
125
150
T
T
C
C
Fig. 2 - Power Dissipation vs.
Fig. 1 - Maximum DC Collector Current vs.
Case Temperature
Case Temperature
4.2
100
10
1
I
= 350µA
C
4.0
3.8
3.6
3.4
3.2
3.0
2.8
2.6
25
50
75
100
125
150
10
100
1000
10000
T , Temperature (°C)
V
(V)
CE
J
Fig. 4 - Reverse Bias SOA
Fig. 3 - Typical Gate Threshold Voltage
TJ = 150°C; VGE = 20V
vs. Junction Temperature
60
50
40
60
50
40
30
20
10
0
V
V
V
V
V
= 18V
= 15V
= 12V
= 10V
= 8.0V
GE
GE
GE
GE
GE
V
V
V
V
V
= 18V
= 15V
= 12V
= 10V
= 8.0V
GE
GE
GE
GE
GE
30
20
10
0
0
2
4
6
8
10
0
2
4
6
8
10
V
(V)
V
(V)
CE
CE
Fig. 5 - Typ. IGBT Output Characteristics
Fig. 6 - Typ. IGBT Output Characteristics
TJ = -40°C; tp = 20µs
TJ = 25°C; tp = 20µs
3
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© 2012 International Rectifier
January 8, 2013
IRG7PH28UD1PbF/IRG7PH28UD1MPbF
60
50
40
30
20
10
0
100
V
V
V
V
V
= 18V
= 15V
= 12V
= 10V
= 8.0V
GE
GE
GE
GE
GE
10
1
25°C
150°C
0.1
0
2
4
6
8
10
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
V
(V)
V
(V)
CE
F
Fig. 8 - Typ. Diode Forward Voltage Drop
Fig. 7 - Typ. IGBT Output Characteristics
Characteristics
TJ = 150°C; tp = 20µs
12
10
12
10
8
I
= 7.5A
= 15A
= 30A
CE
8
6
4
2
0
I
CE
I
= 7.5A
= 15A
= 30A
CE
I
CE
I
CE
6
I
CE
4
2
0
5
10
15
20
5
10
15
20
V
(V)
V
(V)
GE
GE
Fig. 9 - Typical VCE vs. VGE
Fig. 10 - Typical VCE vs. VGE
TJ = -40°C
TJ = 25°C
12
10
8
70
60
50
40
30
20
10
0
I
= 7.5A
= 15A
= 30A
CE
I
CE
I
CE
6
T = 150°C
J
4
T = 25°C
J
2
0
5
10
15
20
4
5
6
7
8
9
10 11 12
V
(V)
V
(V)
GE
GE
Fig. 12 - Typ. Transfer Characteristics
CE = 50V; tp = 20µs
Fig. 11 - Typical VCE vs. VGE
V
TJ = 150°C
4
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© 2012 International Rectifier
January 8, 2013
IRG7PH28UD1PbF/IRG7PH28UD1MPbF
1000
2000
1600
1200
800
400
0
td
OFF
E
OFF
t
100
F
10
0
5
10
15
(A)
20
25
30
0
5
10
15
(A)
20
25
30
I
I
C
C
Fig. 13 - Typ. Energy Loss vs. IC
Fig. 14 - Typ. Switching Time vs. IC
TJ = 150°C; L = 1.0mH; VCE = 600V, RG = 22; VGE = 15V
TJ = 150°C; L = 1.0mH; VCE = 600V, RG = 22; VGE = 15V
1000
1800
td
OFF
1600
E
OFF
1400
1200
1000
800
t
F
100
10
0
20
40
60
80
100
0
20
40
60
80
100
R
( )
G
Rg ( )
Fig. 16 - Typ. Switching Time vs. RG
Fig. 15 - Typ. Energy Loss vs. RG
TJ = 150°C; L = 1.0mH; VCE = 600V, ICE = 15A; VGE = 15V
TJ =
10000
1000
100
10
16
V
V
= 600V
= 400V
14
12
10
8
CES
CES
Cies
6
Coes
Cres
4
2
1
0
0
10
20
30
40
50
60
70
0
100
200
300
(V)
400
500
600
Q
, Total Gate Charge (nC)
V
G
CE
Fig. 17 - Typ. Capacitance vs. VCE
Fig. 18 - Typical Gate Charge vs. VGE
CE = 15A
VGE= 0V; f = 1MHz
I
5
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© 2012 International Rectifier
January 8, 2013
IRG7PH28UD1PbF/IRG7PH28UD1MPbF
10
1
D = 0.50
0.20
0.10
0.05
0.02
0.1
Ri (°C/W)
0.015352
0.360775
0.431394
0.282479
i (sec)
0.000008
0.000223
0.002475
0.01715
R1
R1
R2
R2
R3
R3
R4
R4
J J
CC
0.01
0.01
0.001
0.0001
1 1
2 2
3 3
4 4
Ci= iRi
Ci= iRi
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t
, Rectangular Pulse Duration (sec)
1
Fig. 19 - Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
10
1
D = 0.50
0.20
Ri (°C/W)
i (sec)
0.000005
0.000677
0.003514
0.019551
0.10
0.05
R1
R1
R2
R2
R3
R3
R4
R4
0.00756
0.56517
0.54552
0.25085
0.1
J J
CC
1 1
2 2
3 3
4 4
0.02
0.01
Ci= iRi
Ci= iRi
0.01
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t
, Rectangular Pulse Duration (sec)
1
Fig. 20 - Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)
6
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© 2012 International Rectifier
January 8, 2013
IRG7PH28UD1PbF/IRG7PH28UD1MPbF
L
L
80 V
+
-
VCC
DUT
0
DUT
VCC
1K
Rg
Fig.C.T.2 - RBSOA Circuit
Fig.C.T.1 - Gate Charge Circuit (turn-off)
diode clamp /
DUT
C force
100K
L
D1 22K
-5V
C sense
DUT /
DRIVER
VCC
DUT
G force
0.0075µF
Rg
E sense
E force
Switching Loss
Fig.C.T.3 - Switching Loss Circuit
Fig.C.T.4 - BVCES Filter Circuit
800
700
600
500
400
300
200
100
40
35
30
25
20
15
10
5
tf
90% ICE
5% ICE
5% VCE
0
0
Eoff Loss
-100
-5
-0.5
0
0.5
1
time(µs)
Fig. WF1 - Typ. Turn-off Loss Waveform
@ TJ = 150°C using Fig. CT.3
7
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© 2012 International Rectifier
January 8, 2013
IRG7PH28UD1PbF/IRG7PH28UD1MPbF
TO-247AC Package Outline
Dimensions are shown in millimeters (inches)
TO-247AC Part Marking Information
Notes: This part marking information applies to devices produced after 02/26/2001
EXAMPLE: THIS IS AN IRFPE30
WITH ASSEMBLY
PART NUMBER
INTERNATIONAL
LOT CODE 5657
ASSEMBLED ON WW 35, 2001
IN THE ASSEMBLY LINE "H"
IRFPE30
RECTIFIER
135H
LOGO
56
57
DATE CODE
YEAR 1 = 2001
WEEK 35
ASSEMBLY
LOT CODE
Note: "P" in assembly line position
indicates "Lead-Free"
LINE H
TO-247AC package is not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
www.irf.com © 2012 International Rectifier
8
January 8, 2013
IRG7PH28UD1PbF/IRG7PH28UD1MPbF
TO-247AD Package Outline
Dimensions are shown in millimeters (inches)
E
A
A
"A"
E2/2
A2
Q
E2
2X
D
B
L1
"A"
L
SEE
VIEW "B"
2x b2
3x b
Ø .010
B A
c
b4
A1
e
2x
LEAD TIP
Ø P
Ø .010 B A
-A-
S
D1
VIEW: "B"
THERMAL PAD
PLATING
BASE METAL
E1
(c)
Ø .010
B A
VIEW: "A" - "A"
(b, b2, b4)
SECTION: C-C, D-D, E-E
TO-247AD Part Marking Information
E X A M P L E : T H IS IS A N IR G P 3 0 B 1 2 0 K D - E
W IT H A S S E M B L Y
P A R T N U M B E R
IN T E R N A T IO N A L
R E C T IF IE R
L O T C O D E 5 6 5 7
A S S E M B L E D O N W W 3 5 , 2 0 0 0
IN T H E A S S E M B L Y L IN E "H "
0 3 5 H
L O G O
5 6
5 7
D A T E C O D E
Y E A R 2 0 0 0
W E E K 3 5
L IN E
0
=
A S S E M B L Y
L O T C O D E
N o te : "P " in a s s e m b ly lin e p o s itio n
in d ic a te s "L e a d - F re e "
H
TO-247AD package is not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
9
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© 2012 International Rectifier
January 8, 2013
IRG7PH28UD1PbF/IRG7PH28UD1MPbF
Qualification Information†
Qualification Level
Industrial†
(per JEDEC JESD47F) ††
TO-247AC
TO-247AD
N/A
Moisture Sensitivity Level
N/A
Yes
RoHS Compliant
†
Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/
†† Applicable version of JEDEC standard at the time of product release.
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
10
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© 2012 International Rectifier
January 8, 2013
相关型号：
IRG7PH35UD1-EP
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS
INFINEON
IRG7PH35UD1PBF
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS
INFINEON
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