IRG7PH50UPBF [INFINEON]
INSULATED GATE BIPOLAR TRANSISTOR; 绝缘栅双极晶体管
| 型号： | IRG7PH50UPBF |
| 厂家： | 
Infineon |
| 描述： | INSULATED GATE BIPOLAR TRANSISTOR |
| 文件： | 总10页 (文件大小：366K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 97549
IRG7PH50UPbF
IRG7PH50U-EP
INSULATED GATE BIPOLAR TRANSISTOR
Features
• Low VCE (ON) trench IGBT technology
• Low switching losses
• Maximum junction temperature 175 °C
• SquareRBSOA
• 100% of the parts tested for ILM
• Positive VCE (ON) temperature co-efficient
• Tightparameterdistribution
• Lead-Free
C
VCES = 1200V
IC = 90A, TC = 100°C
TJ(max) =175°C
G
E
V
CE(on) typ. = 1.7V
n-channel
Benefits
• High efficiency in a wide range of applications
• Suitable for a wide range of switching frequencies due to
low VCE (ON) and low switching losses
C
C
• Ruggedtransientperformanceforincreasedreliability
• Excellent current sharing in parallel operation
E
E
C
C
G
G
TO-247AD
IRG7PH50U-EP
TO-247AC
IRG7PH50UPbF
Applications
• U.P.S
• Welding
• Solarinverter
• Inductionheating
G
Gate
C
E
Collector
Emitter
Absolute Maximum Ratings
Parameter
Max.
Units
VCES
Collector-to-Emitter Voltage
1200
140
V
IC @ TC = 25°C
Continuous Collector Current (Silicon Limited)
Continuous Collector Current (Silicon Limited)
Nominal Current
IC @ TC = 100°C
90
INOMINAL
A
50
ICM
Pulse Collector Current, VGE = 15V
Clamped Inductive Load Current, VGE = 20V
150
ILM
200
VGE
V
Continuous Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
±30
PD @ TC = 25°C
556
W
PD @ TC = 100°C
278
TJ
-55 to +175
TSTG
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
°C
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Thermal Resistance
Parameter
Min.
–––
–––
–––
Typ.
–––
0.24
40
Max.
0.27
–––
Units
Rθ (IGBT)
Thermal Resistance Junction-to-Case-(each IGBT) TO-247AC
Thermal Resistance, Case-to-Sink (flat, greased surface)
Thermal Resistance, Junction-to-Ambient (typical socket mount)
JC
°C/W
Rθ
CS
Rθ
JA
–––
1
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07/28/2010
IRG7PH50UPbF/IRG7PH50U-EP
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)CES
VGE = 0V, IC = 100µA
Collector-to-Emitter Breakdown Voltage
1200
—
1.0
1.7
2.0
2.1
—
—
V
∆V(BR)CES/∆TJ
VGE = 0V, IC = 1mA (25°C-150°C)
IC = 50A, VGE = 15V, TJ = 25°C
IC = 50A, VGE = 15V, TJ = 150°C
IC = 50A, VGE = 15V, TJ = 175°C
VCE = VGE, IC = 2.0mA
Temperature Coeff. of Breakdown Voltage
—
—
V/°C
—
2.0
—
VCE(on)
Collector-to-Emitter Saturation Voltage
—
V
—
—
VGE(th)
Gate Threshold Voltage
3.0
—
6.0
—
V
mV/°C
S
∆VGE(th)/∆TJ
V
V
CE = VGE, IC = 1mA (25°C - 175°C)
CE = 50V, IC = 50A, PW = 80µs
Threshold Voltage temp. coefficient
Forward Transconductance
-17
55
gfe
—
—
ICES
VGE = 0V, VCE = 1200V
VGE = 0V, VCE = 1200V, TJ = 175°C
VGE = ±30V
Collector-to-Emitter Leakage Current
—
2.0
1700
—
100
—
µA
nA
—
IGES
Gate-to-Emitter Leakage Current
—
±200
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Total Gate Charge (turn-on)
Gate-to-Emitter Charge (turn-on)
Gate-to-Collector Charge (turn-on)
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Min. Typ. Max. Units
Conditions
IC = 50A
Qg
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
290
440
Qge
Qgc
Eon
Eoff
Etotal
td(on)
tr
VGE = 15V
40
60
nC
µJ
ns
VCC = 600V
110
170
IC = 50A, VCC = 600V, VGE = 15V
RG = 5.0Ω, L = 200µH,TJ = 25°C
3600 4600
2200 3200
5800 7800
Energy losses include tail & diode reverse recovery
Diode clamp the same as IRG7PH50UDPbF
35
40
55
60
500
65
—
—
—
—
—
—
—
—
—
—
td(off)
tf
Turn-Off delay time
Fall time
430
45
Eon
Eoff
Etotal
td(on)
tr
IC = 50A, VCC = 600V, VGE=15V
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
5600
3900
9500
30
RG=5.0Ω, L=200µH, TJ = 175°C
µJ
ns
pF
Energy losses include tail & diode reverse recovery
Diode clamp the same as IRG7PH50UDPbF
45
td(off)
tf
Turn-Off delay time
Fall time
500
210
6000
190
130
Cies
Coes
Cres
VGE = 0V
VCC = 30V
f = 1.0Mhz
IC = 200A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
CC = 960V, Vp =1200V
RBSOA
Reverse Bias Safe Operating Area
FULL SQUARE
Rg = 5.0Ω, VGE = +20V to 0V, TJ =175°C
Notes:
VCC = 80% (VCES), VGE = 20V, L = 200µH, RG = 5.0Ω.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
Refer to AN-1086 for guidelines for measuring V(BR)CES safely.
Rθ is measured at TJ of approximately 90°C.
2
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IRG7PH50UPbF/IRG7PH50U-EP
120
100
80
60
40
20
0
Duty cycle : 50%
Tj = 150°C
Tc = 100°C
Vcc = 600V
Gate drive as specified
Power Dissipation = 183W
Square Wave:
VCC
I
Diode as specified
0.1
1
10
100
f , Frequency ( kHz )
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
600
140
120
100
80
500
400
300
200
100
0
60
40
20
0
25
50
75
100
(°C)
125
150
175
25
50
75
100
(°C)
125
150
175
T
C
T
C
Fig. 2 - Maximum DC Collector Current vs.
Fig. 3 - Power Dissipation vs. Case
CaseTemperature
Temperature
1000
1000
100
10µsec
100
10
1
10
100µsec
1msec
1
DC
0.1
Tc = 25°C
Tj = 175°C
Single Pulse
0.01
10
100
1000
10000
1
10
100
(V)
1000
10000
V
(V)
V
CE
CE
Fig. 4 - Forward SOA
TC = 25°C, TJ ≤ 175°C; VGE =15V
Fig. 5 - Reverse Bias SOA
TJ = 175°C; VGE =20V
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3
IRG7PH50UPbF/IRG7PH50U-EP
200
150
100
50
200
150
100
V
V
V
V
V
= 18V
= 15V
= 12V
= 10V
= 8.0V
GE
GE
GE
GE
GE
V
V
V
V
V
= 18V
= 15V
= 12V
= 10V
= 8.0V
GE
GE
GE
GE
GE
50
0
0
0
2
4
6
8
10
0
2
4
6
8
10
V
(V)
V
(V)
CE
CE
Fig. 6 - Typ. IGBT Output Characteristics
Fig. 7 - Typ. IGBT Output Characteristics
TJ = -40°C; tp = 30µs
TJ = 25°C; tp = 30µs
200
150
12
10
8
6
4
2
0
I
I
I
= 25A
= 50A
= 100A
CE
CE
CE
V
V
V
V
V
= 18V
= 15V
= 12V
= 10V
= 8.0V
100
50
0
GE
GE
GE
GE
GE
0
2
4
6
8
10
0
5
10
15
20
V
(V)
CE
V
(V)
GE
Fig. 9 - Typical VCE vs. VGE
Fig. 8 - Typ. IGBT Output Characteristics
TJ = -40°C
TJ = 175°C; tp = 30µs
12
12
10
8
10
8
6
4
2
0
I
I
I
= 25A
= 50A
= 100A
CE
CE
CE
I
I
I
= 25A
= 50A
= 100A
CE
CE
CE
6
4
2
0
0
5
10
15
20
0
5
10
15
20
V
(V)
V
(V)
GE
GE
Fig. 10 - Typical VCE vs. VGE
Fig. 11 - Typical VCE vs. VGE
TJ = 25°C
TJ = 175°C
4
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IRG7PH50UPbF/IRG7PH50U-EP
12000
200
150
100
50
10000
8000
E
ON
T = 25°C
6000
4000
J
T
= 175°C
J
E
OFF
2000
0
0
0
20
40
60
(A)
80
100
0
2
4
6
8
10
I
V
, Gate-to-Emitter Voltage (V)
C
GE
Fig. 12- Typ. Transfer Characteristics
Fig. 13 - Typ. Energy Loss vs. IC
TJ = 175°C; L = 200µH; VCE = 600V, RG = 5.0Ω; VGE = 15V
VCE = 50V; tp = 30µs
16000
14000
1000
td
OFF
E
OFF
12000
t
F
10000
E
ON
8000
6000
4000
2000
0
100
td
ON
t
R
10
0
20
40
Rg (
60
80
100
0
20
40
60
80
100
I
(A)
C
Ω
)
Fig. 14 - Typ. Switching Time vs. IC
TJ = 175°C; L = 200µH; VCE = 600V, RG = 5.0Ω; VGE = 15V
Fig. 15 - Typ. Energy Loss vs. RG
TJ = 175°C; L = 200µH; VCE = 600V, ICE = 50A; VGE = 15V
10000
td
OFF
1000
t
F
100
10
t
R
td
ON
0
20
40
60
(Ω)
80
100
R
G
Fig. 16 - Typ. Switching Time vs. RG
TJ = 175°C; L = 200µH; VCE = 600V, ICE = 50A; VGE = 15V
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5
IRG7PH50UPbF/IRG7PH50U-EP
10000
16
14
12
10
8
Cies
V
V
= 600V
= 400V
CES
CES
1000
Coes
100
6
4
Cres
2
10
0
0
100
200
300
(V)
400
500
600
0
50
100
150
200
250
300
V
Q
, Total Gate Charge (nC)
CE
G
Fig. 18- Typical Gate Charge vs. VGE
Fig. 17 - Typ. Capacitance vs. VCE
ICE = 50A
VGE= 0V; f = 1MHz
1
D = 0.50
0.1
0.20
0.10
0.05
0.01
R1
R1
R2
R2
R3
R3
R4
R4
Ri (°C/W) τi (sec)
0.00296 0.000009
0.02
0.01
τ
τ
J τJ
τ
Cτ
0.08150 0.000180
0.11707 0.003342
0.06917 0.017016
1τ1
Ci= τi/Ri
τ
τ
τ
2 τ2
3τ3
4τ4
0.001
Notes:
SINGLE PULSE
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
( THERMAL RESPONSE )
0.0001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t
, Rectangular Pulse Duration (sec)
1
Fig 19. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT) TO-247AC
6
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IRG7PH50UPbF/IRG7PH50U-EP
L
L
80 V
+
-
DUT
VCC
0
DUT
VCC
1K
Rg
Fig.C.T.1 - Gate Charge Circuit (turn-off)
Fig.C.T.2 - RBSOA Circuit
R = VCC
diode clamp /
DUT
ICM
L
VCC
DUT
-5V
Rg
DUT /
VCC
DRIVER
Rg
Fig.C.T.3 - Switching Loss Circuit
Fig.C.T.4 - Resistive Load Circuit
C force
100K
D1 22K
C sense
0.0075µF
DUT
G force
E sense
E force
Fig.C.T.5 - BVCES Filter Circuit
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7
IRG7PH50UPbF/IRG7PH50U-EP
1200
1000
800
600
400
200
0
120
100
80
1200
1000
800
600
400
200
0
120
100
80
60
40
20
0
tf
tr
TEST
CURRENT
90% tes t
current
60
90% ICE
40
10% test
current
5% VCE
5% ICE
5% VCE
20
0
EonLoss
Eoff Loss
-200
-20
-200
-20
-3 -2 -1
0
1
2
3
4
5
-0.5
0
0.5
1
1.5
2
time(µs)
time (µs)
Fig. WF1 - Typ. Turn-off Loss Waveform
Fig. WF2 - Typ. Turn-on Loss Waveform
@ TJ = 175°C using Fig. CT.4
@ TJ = 175°C using Fig. CT.4
8
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IRG7PH50UPbF/IRG7PH50U-EP
TO-247AC Package Outline
Dimensions are shown in millimeters (inches)
TO-247AC Part Marking Information
TO-247AC package is not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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9
IRG7PH50UPbF/IRG7PH50U-EP
TO-247AD Package Outline
Dimensions are shown in millimeters (inches)
TO-247AD Part Marking Information
TO-247AD package is not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 07/2010
10
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