IRG7PK35UD1PBF [INFINEON]
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode;
| 型号： | IRG7PK35UD1PBF |
| 厂家： | 
Infineon |
| 描述： | Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode 栅 |
| 文件： | 总10页 (文件大小：533K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IRG7PK35UD1PbF
IRG7PK35UD1-EPbF
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
C
C
VCES = 1400V
IC = 20A, TC =100°C
TJ(max) = 150°C
C
G
E
E
C
C
G
G
VCE(ON) typ. = 2.0V @ IC = 20A
E
IRG7PK35UD1PbF
IRG7PK35UD1‐EPbF
TO‐247AD
n-channel
TO‐247AC
Applications
Induction heating
Microwave ovens
Soft switching applications
G
Gate
C
E
Collector
Emitter
Features
Benefits
High efficiency in a wide range of soft switching
Low VCE(ON), ultra-low VF, and turn-off soft switching losses
applications and switching frequencies
Positive VCE (ON) temperature coefficient and tight distribution
of parameters
Excellent current sharing in parallel operation
Environmentally friendly
Lead-free, RoHS compliant
Base part number
Package Type
Standard Pack
Form
Orderable Part Number
Quantity
IRG7PK35UD1PbF
TO-247AC
TO-247AD
Tube
Tube
25
25
IRG7PK35UD1PbF
IRG7PK35UD1-EPbF
IRG7PK35UD1-EPbF
Absolute Maximum Ratings
Parameter
Max.
Units
VCES
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulse Collector Current, VGE = 15V
Clamped Inductive Load Current, VGE = 20V
Diode Continuous Forward Current
Diode Continuous Forward Current
Continuous Gate-to-Emitter Voltage
Maximum Power Dissipation
1400
40
20
200
80
40
20
±30
167
V
IC @ TC = 25°C
IC @ TC = 100°C
ICM
A
ILM
IF @ TC = 25°C
IF @ TC = 100°C
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
V
W
Maximum Power Dissipation
Operating Junction and
67
-40 to +150
TSTG
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
C
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Thermal Resistance
Parameter
Min.
–––
–––
–––
–––
Typ.
–––
–––
0.24
40
Max.
0.75
1.4
–––
–––
Units
Thermal Resistance Junction-to-Case (IGBT)
Thermal Resistance Junction-to-Case (Diode)
Thermal Resistance, Case-to-Sink (flat, greased surface)
Thermal Resistance, Junction-to-Ambient (typical socket mount)
RJC (IGBT)
RJC (Diode)
RCS
°C/W
RJA
1
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IRG7PK35UD1PbF/IRG7PK35UD1-EPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
Typ.
Max. Units
Conditions
—
—
3.0
2.0
2.4
—
2.35
—
6.0
V
IC = 20A, VGE = 15V, TJ = 25°C
IC = 20A, VGE = 15V, TJ = 150°C
VCE = VGE, IC = 600µA
VCE(on)
Collector-to-Emitter Saturation Voltage
VGE(th)
gfe
Gate Threshold Voltage
V
Forward Transconductance
—
—
—
—
—
—
21
1.0
150
—
1.30
1.25
—
100
—
±100
1.43
—
S
µA
V
V
CE = 50V, IC = 20A, PW = 20µs
GE = 0V, VCE = 1400V
ICES
IGES
VF
Collector-to-Emitter Leakage Current
Gate-to-Emitter Leakage Current
Diode Forward Voltage Drop
VGE = 0V, VCE = 1400V, TJ = 150°C
VGE = ±30V
IF = 20A
nA
V
IF = 20A, TJ = 150°C
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
Typ. Max Units
Conditions
Qg
Qge
Qgc
Total Gate Charge (turn-on)
Gate-to-Emitter Charge (turn-on)
Gate-to-Collector Charge (turn-on)
—
—
—
65
15
25
98
23
38
IC = 20A
VGE = 15V
nC
VCC = 600V
IC = 20A, VCC = 600V, VGE = 15V
RG = 10, TJ = 25°C
Energy losses include tail
Eoff
Turn-Off Switching Loss
—
0.65
0.90
mJ
ns
td(off)
tf
Turn-Off delay time
Fall time
—
—
150
75
170
95
IC = 20A, VCC = 600V, VGE = 15V
RG = 10, TJ = 150°C
Eoff
Turn-Off Switching Loss
—
1.3
—
mJ
td(off)
Turn-Off delay time
—
180
—
Energy losses include tail
ns
tf
Fall time
—
—
—
—
180
2200
70
—
—
—
—
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGE = 0V
VCC = 30V
f = 1.0MHz
pF
35
TJ = 150°C, IC = 80A
FULL SQUARE
V
CC = 1120V, Vp ≤ 1400V
RBSOA
Reverse Bias Safe Operating Area
RG = 10, VGE = +20V to 0V
Notes:
FBSOA operating conditions only.
Pulse width limited by max. junction temperature.
VCC = 80% (VCES), VGE = 20V, RG = 10.
R is measured at TJ of approximately 90°C.
Refer to AN-1086 for guidelines for measuring V(BR)CES safely.
Maximum limits are based on statistical sample size characterization.
2
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IRG7PK35UD1PbF/IRG7PK35UD1-EPbF
40
30
20
10
0
200
150
100
50
0
25
50
75
100
(°C)
125
150
25
50
75
100
(°C)
125
150
T
T
C
C
Fig. 2 - Power Dissipation vs.
Fig. 1 - Maximum DC Collector Current vs.
Case Temperature
Case Temperature
1000
100
10
5.0
4.6
4.2
3.8
3.4
3.0
I
= 600µA
C
1
10
100
1000
10000
25
50
75
100
125
150
V
(V)
CE
T
, Temperature (°C)
J
Fig. 4 - Reverse Bias SOA
Fig. 3 - Typical Gate Threshold Voltage
TJ = 150°C; VGE = 20V
vs. Junction Temperature
80
60
40
20
0
80
60
40
20
0
V
V
V
V
V
= 18V
= 15V
= 12V
= 10V
= 8.0V
GE
GE
GE
GE
GE
V
V
V
V
V
= 18V
= 15V
= 12V
= 10V
= 8.0V
GE
GE
GE
GE
GE
0
2
4
6
8
10
0
2
4
6
8
10
V
(V)
V
(V)
CE
CE
Fig. 5 - Typ. IGBT Output Characteristics
Fig. 6 - Typ. IGBT Output Characteristics
TJ = -40°C; tp = 20µs
TJ = 25°C; tp = 20µs
3
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IRG7PK35UD1PbF/IRG7PK35UD1-EPbF
80
60
40
20
0
80
70
V
V
V
V
V
= 18V
= 15V
= 12V
= 10V
= 8.0V
GE
GE
GE
GE
GE
25°C
150°C
60
50
40
30
20
10
0
0
2
4
6
8
10
0.0
1.0
2.0
3.0
V
(V)
V
(V)
CE
F
Fig. 8 - Typ. Diode Forward Voltage Drop
Fig. 7 - Typ. IGBT Output Characteristics
Characteristics
TJ = 150°C; tp = 20µs
12
12
10
10
8
I
= 40A
= 20A
= 10A
CE
8
6
4
2
0
I
= 40A
= 20A
= 10A
I
CE
CE
I
I
CE
CE
6
I
CE
4
2
0
5
10
15
20
5
10
15
20
V
(V)
V
(V)
GE
GE
Fig. 9 - Typical VCE vs. VGE
Fig. 10 - Typical VCE vs. VGE
TJ = -40°C
TJ = 25°C
12
10
8
80
60
40
20
0
I
= 40A
= 20A
= 10A
CE
I
CE
I
6
CE
4
T = 25°C
J
T = 150°C
J
2
0
5
10
15
20
2
4
6
8
10
12
V
(V)
V
(V)
GE
GE
Fig. 12 - Typ. Transfer Characteristics
Fig. 11 - Typical VCE vs. VGE
VCE = 50V; tp = 20µs
TJ = 150°C
4
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IRG7PK35UD1PbF/IRG7PK35UD1-EPbF
2.5
2.0
1.5
1.0
0.5
0.0
1000
td
OFF
E
OFF
t
F
100
10
0
10
20
(A)
30
40
0
10
20
(A)
30
40
I
I
C
C
Fig. 13 - Typ. Energy Loss vs. IC
Fig. 14 - Typ. Switching Time vs. IC
TJ = 150°C; VCE = 600V, RG = 10; VGE = 15V
TJ = 150°C; VCE = 600V, RG = 10; VGE = 15V
10000
2.6
2.2
1000
100
10
td
E
OFF
OFF
1.8
1.4
1.0
t
F
0
20
40
60
80
100
0
20
40
Rg (
60
80
100
R
( )
)
G
Fig. 16 - Typ. Switching Time vs. RG
TJ = 150°C; VCE = 600V, ICE = 20A; VGE = 15V
Fig. 15 - Typ. Energy Loss vs. RG
TJ = 150°C; VCE = 600V, ICE = 20A; VGE = 15V
16
10000
V
V
= 600V
= 400V
Cies
14
12
10
8
CES
CES
1000
100
10
Coes
Cres
6
4
2
0
1
0
10
20
30
40
50
60
70
0
100
200
300
(V)
400
500
600
Q
, Total Gate Charge (nC)
V
G
CE
Fig. 18 - Typical Gate Charge vs. VGE
CE = 20A
Fig. 17 - Typ. Capacitance vs. VCE
I
VGE= 0V; f = 1MHz
5
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IRG7PK35UD1PbF/IRG7PK35UD1-EPbF
1
D = 0.50
0.20
Ri (°C/W)
0.009435
0.134412
0.182875
0.286292
0.136974
i (sec)
0.1
0.10
0.05
0.00000971
0.00005224
0.00033830
0.00397000
0.02151000
R1
R1
R2
R2
R3
R3
R4
R4
R5
R5
J J
CC
11
22
33
44
55
0.02
0.01
Ci= iRi
Ci= iRi
0.01
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t
, Rectangular Pulse Duration (sec)
1
Fig. 19 - Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
10
1
D = 0.50
0.20
Ri (°C/W)
0.017209
0.520952
0.550676
0.309755
i (sec)
0.000012
0.000591
0.004389
0.032009
R1
R1
R2
R2
R3
R3
R4
R4
0.10
0.05
0.1
J J
CC
1 1
2 2
0.02
0.01
3 3
4 4
Ci= iRi
Ci= iRi
0.01
0.001
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
SINGLE PULSE
( THERMAL RESPONSE )
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t
, Rectangular Pulse Duration (sec)
1
Fig. 20 - Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)
6
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IRG7PK35UD1PbF/IRG7PK35UD1-EPbF
L
80 V
+
-
DUT
VCC
Rg
Fig.C.T.2 - RBSOA Circuit
Fig.C.T.1 - Gate Charge Circuit (turn-off)
diode clamp /
DUT
C force
L
100K
D1 22K
C sense
-5V
DUT
DUT /
DRIVER
G force
0.0075µF
VCC
Rg
E sense
E force
Fig.C.T.3 - Switching Loss Circuit
Fig.C.T.4 - BVCES Filter Circuit
800
700
600
500
400
300
200
100
0
80
70
60
50
40
30
20
10
0
tf
90% ICE
10% ICE
5% VCE
Eoff Loss
-100
-10
-1.4
-0.4
0.6
time(µs)
1.6
2.6
Fig. WF1 - Typ. Turn-off Loss Waveform
@ TJ = 150°C using Fig. CT.3
7
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IRG7PK35UD1PbF/IRG7PK35UD1-EPbF
TO-247AC Package Outline
Dimensions are shown in millimeters (inches)
TO-247AC Part Marking Information
Notes: This part marking information applies to devices produced after 02/26/2001
EXAMPLE: THIS IS AN IRFPE30
WITH ASSEMBLY
PART NUMBER
INTERNATIONAL
LOT CODE 5657
IRFPE30
RECTIFIER
ASSEMBLED ON WW 35, 2001
IN THE ASSEMBLY LINE "H"
135H
LOGO
56
57
DATE CODE
YEAR 1 = 2001
WEEK 35
ASSEMBLY
LOT CODE
Note: "P" in assembly line position
indicates "Lead-Free"
LINE H
TO-247AC package is not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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8
February 27, 2014
IRG7PK35UD1PbF/IRG7PK35UD1-EPbF
TO-247AD Package Outline
Dimensions are shown in millimeters (inches)
TO-247AD Part Marking Information
E X A M P L E : T H IS IS A N IR G P 3 0 B 1 2 0 K D -E
W IT H A S S E M B L Y
P A R T N U M B E R
IN T E R N A T IO N A L
L O T C O D E 5 6 5 7
R E C T IF IE R
L O G O
A S S E M B L E D O N W W 3 5 , 2 0 0 0
IN T H E A S S E M B L Y L IN E "H "
0 3 5 H
5 6
5 7
D A T E C O D E
Y E A R 2 0 0 0
W E E K 3 5
L IN E
0
=
A S S E M B L Y
L O T C O D E
N o te : "P " in a s s e m b ly lin e p o s itio n
in d ic a te s "L e a d -F re e "
H
TO-247AD package is not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
9
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February 27, 2014
IRG7PK35UD1PbF/IRG7PK35UD1-EPbF
Qualification Information†
Qualification Level
Consumer††
(per JEDEC JESD47F)†††
TO-247AC
TO-247AD
N/A
N/A
Moisture Sensitivity Level
RoHS Compliant
Yes
†
Qualification standards can be found at International Rectifier’s web site
http://www.irf.com/product-info/reliability
††
Higher qualification ratings may be available should the user have such requirements.
Please contact your International Rectifier sales representative for further information:
http://www.irf.com/whoto-call/salesrep/
††† Applicable version of JEDEC standard at the time of product release.
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
10
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February 27, 2014
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