IRGBC20M-STRR [INFINEON]
Insulated Gate Bipolar Transistor, 13A I(C), 600V V(BR)CES, N-Channel, SMD-220, 3 PIN;
| 型号： | IRGBC20M-STRR |
| 厂家： | 
Infineon |
| 描述： | Insulated Gate Bipolar Transistor, 13A I(C), 600V V(BR)CES, N-Channel, SMD-220, 3 PIN 晶体 晶体管 双极性晶体管 栅 局域网 |
| 文件： | 总6页 (文件大小：217K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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PD - 9.686A
IRGBC20F
INSULATED GATE BIPOLAR TRANSISTOR
Fast Speed IGBT
Features
C
• Switching-loss rating includes all "tail" losses
• Optimized for medium operating frequency ( 1 to
10kHz) See Fig. 1 for Current vs. Frequency curve
VCES = 600V
V
CE(sat) ≤ 2.8V
G
@VGE = 15V, IC = 9.0A
E
n-channel
Description
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have
higher usable current densities than comparable bipolar transistors, while at
the same time having simpler gate-drive requirements of the familiar power
MOSFET. They provide substantial benefits to a host of high-voltage, high-
current applications.
TO-220AB
Absolute Maximum Ratings
Parameter
Max.
600
16
Units
V
VCES
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
IC @ TC = 25°C
IC @ TC = 100°C
9.0
64
A
ICM
ILM
Clamped Inductive Load Current
Gate-to-Emitter Voltage
64
VGE
±20
5.0
60
V
mJ
W
EARV
Reverse Voltage Avalanche Energy
Maximum Power Dissipation
PD @ TC = 25°C
PD @ TC = 100°C Maximum Power Dissipation
24
TJ
Operating Junction and
-55 to +150
TSTG
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting torque, 6-32 or M3 screw.
°C
300 (0.063 in. (1.6mm) from case)
10 lbf•in (1.1N•m)
Thermal Resistance
Parameter
Junction-to-Case
Min.
—
Typ.
—
Max.
2.1
—
Units
°C/W
RθJC
RθCS
RθJA
Wt
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
—
0.50
—
—
80
—
2.0 (0.07)
—
g (oz)
Revision 0
C-51
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IRGBC20F
Electrical Characteristics @ T = 25°C (unless otherwise specified)
J
Parameter
Min. Typ. Max. Units
Conditions
VGE = 0V, IC = 250µA
VGE = 0V, IC = 1.0A
V(BR)CES
V(BR)ECS
Collector-to-Emitter Breakdown Voltage
Emitter-to-Collector Breakdown Voltage
600
20
—
—
—
—
—
—
V
V
∆V(BR)CES/∆TJ Temp. Coeff. of Breakdown Voltage
0.72
V/°C VGE = 0V, IC = 1.0mA
IC = 9.0A
VCE(on)
Collector-to-Emitter Saturation Voltage
—
2.0 2.8
VGE = 15V
—
2.6
2.3
—
—
—
V
IC = 16A
See Fig. 2, 5
—
IC = 9.0A, TJ = 150°C
VCE = VGE, IC = 250µA
VGE(th)
Gate Threshold Voltage
3.0
—
5.5
—
∆VGE(th)/∆TJ Temp. Coeff. of Threshold Voltage
-11
mV/°C VCE = VGE, IC = 250µA
gfe
Forward Transconductance
2.9 5.1
—
S
VCE = 100V, IC = 9.0A
VGE = 0V, VCE = 600V
ICES
Zero Gate Voltage Collector Current
—
—
—
—
—
—
250
1000
±100
µA
VGE = 0V, VCE = 600V, TJ = 150°C
VGE = ±20V
IGES
Gate-to-Emitter Leakage Current
nA
Switching Characteristics @ T = 25°C (unless otherwise specified)
J
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Min. Typ. Max. Units
16 21
2.4 3.4
Conditions
Qg
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
IC = 9.0A
Qge
Qgc
td(on)
tr
nC
ns
VCC = 400V
VGE = 15V
TJ = 25°C
See Fig. 8
7.8
24
13
10
—
—
IC = 9.0A, VCC = 480V
VGE = 15V, RG = 50Ω
Energy losses include "tail"
td(off)
tf
Turn-Off Delay Time
Fall Time
160 270
310 600
Eon
Eoff
Ets
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
0.18
0.90
—
—
mJ See Fig. 9, 10, 11, 14
TJ = 150°C,
1.08 2.0
td(on)
tr
td(off)
tf
25
18
—
—
—
—
—
—
—
—
—
ns
IC = 9.0A, VCC = 480V
VGE = 15V, RG = 50Ω
Energy losses include "tail"
Turn-Off Delay Time
Fall Time
210
600
1.65
7.5
340
63
Ets
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
mJ See Fig. 10, 14
LE
nH
Measured 5mm from package
Cies
Coes
Cres
VGE = 0V
Output Capacitance
Reverse Transfer Capacitance
pF
VCC = 30V
ƒ = 1.0MHz
See Fig. 7
5.9
Notes:
Repetitive rating; VGE=20V, pulse width
limited by max. junction temperature.
( See fig. 13b )
Pulse width 5.0µs,
single shot.
Repetitive rating; pulse width limited
by maximum junction temperature.
Pulse width ≤ 80µs; duty factor ≤ 0.1%.
VCC=80%(VCES), VGE=20V, L=10µH,
RG= 50Ω, ( See fig. 13a )
C-52
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IRGBC20F
20
16
For both:
Triangular wave:
D uty cycle: 50%
T
T
= 12 5°C
J
= 90°C
sin k
G a te d rive as spe cified
Pow er Dissip ation = 13W
Clamp voltage:
80% o f ra te d
Square wave:
12
60% of rated
voltage
8
Ideal diodes
4
0
0.1
1
10
100
f, Frequency (kH z)
Fig. 1 - Typical Load Current vs. Frequency
(For square wave, I=IRMS of fundamental; for triangular wave, I=IPK
)
100
100
10
1
T
= 25°C
J
T
= 25°C
J
T
= 150°C
J
T
= 150°C
J
10
V
= 100V
V
= 15V
CC
G E
20µs PULSE W IDTH
5µs PULSE W IDTH
1
0.1
5
10
15 20
0.1
1
10
V
, G ate-to-E m itter Voltage (V )
VCE , Collector-to-Emitter Voltage (V)
G E
Fig. 3 - Typical Transfer Characteristics
Fig. 2 - Typical Output Characteristics
C-53
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IRGBC20F
4.0
3.5
3.0
2.5
2.0
1.5
1.0
16
12
8
V
= 15V
V
= 15V
G E
80µs P ULSE W IDTH
G E
I
= 18A
C
I
= 9.0A
= 4.5A
C
C
I
4
0
-60 -40 -20
0
20
40
60
8 0 1 00 120 140 160
25
50
75
100
125
150
TC , Case Temperature (°C)
T
, Case Temperature (°C)
C
Fig. 5 - Collector-to-Emitter Voltage vs.
Fig. 4 - Maximum Collector Current vs.
Case Temperature
Case Temperature
10
D
=
0 .50
0.20
1
0.1 0
0 .05
P
D M
0.1
0 .02
0.0 1
t
1
S IN G LE PU L SE
t
(T HE R M A L R ES PO N S E)
2
N otes:
1 . D uty factor D
=
t
/ t
1
2
2. Pea k T = P
x Z
+ T
C
D M
J
thJC
1
0.01
0.00001
0.0001
0.001
0.01
0.1
10
t
, Rectangular Pulse D ura tion (sec)
1
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
C-54
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IRGBC20F
700
20
16
12
8
V
C
C
C
= 0V,
f = 1MHz
V
I
= 400V
= 9.0A
GE
ies
C E
C
= C + C
,
C
ce
SHORTED
ge
gc
= C
gc
600
500
400
300
200
100
0
res
oes
= C + C
ce
gc
C
ies
C
oes
C
res
4
0
1
10
100
0
4
8
12
16
20
V
, C ollector-to-E m itter V oltage (V )
Q g , Total Gate Charge (nC)
C E
Fig. 7 - Typical Capacitance vs.
Fig. 8 - Typical Gate Charge vs.
Collector-to-Emitter Voltage
Gate-to-Emitter Voltage
1.36
1.34
1.32
1.30
1.28
1.26
1.24
10
V
V
T
I
= 480V
= 15V
= 25°C
= 9.0A
Ω
= 50
= 15V
= 480V
R
V
V
CC
G E
C
G
GE
CC
I
I
= 18A
= 9.0A
C
C
C
1
I
= 4.5A
C
0.1
20
30
40
50
60
-60 -40 -20
0
20
40
60
80 100 120 140 160
T , Case Temperature (°C)
R G , Gate Resistance (
Ω )
C
W
Fig. 9 - Typical Switching Losses vs. Gate
Fig. 10 - Typical Switching Losses vs.
Resistance
Case Temperature
C-55
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IRGBC20F
4.0
100
10
1
Ω
V
T
= 20V
= 125°C
R
T
V
V
= 50
G
G E
= 150°C
= 480V
= 15V
C
J
CC
G E
3.0
2.0
1.0
0.0
SA FE OP ERATING AREA
1
10
100
1000
4
8
12
16
20
V
, Collector-to-Em itter Voltage (V)
I
, Collector-to-E mitter Current (A)
C E
C
Fig. 11 - Typical Switching Losses vs.
Fig. 12 - Turn-Off SOA
Collector-to-Emitter Current
Refer to Section D for the following:
Appendix C: Section D - page D-5
Fig. 13a - Clamped Inductive Load Test Circuit
Fig. 13b - Pulsed Collector Current Test Circuit
Fig. 14a - Switching Loss Test Circuit
Fig. 14b - Switching Loss Waveform
Package Outline 1 - JEDEC Outline TO-220AB
Section D - page D-12
C-56
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