IRGBC20S [INFINEON]
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=10A); 绝缘栅双极晶体管（ VCES = 600V ， VGE @ = 15V ， IC = 10A）
| 型号： | IRGBC20S |
| 厂家： | 
Infineon |
| 描述： | INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=10A) |
| 文件： | 总7页 (文件大小：241K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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IGBT Designer’s Manual
Data Sheets
The IGBT devices listed in this Designer’s
Manual represent International Rectifier’s
IGBT line as of August, 1994. The data
presented in this manual supersedes all
previous specifications.
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PD - 9.687A
IRGBC20S
Standard Speed IGBT
INSULATED GATE BIPOLAR TRANSISTOR
Features
C
• Switching-loss rating includes all "tail" losses
• Optimized for line frequency operation ( to 400 Hz)
See Fig. 1 for Current vs. Frequency curve
VCES = 600V
V
CE(sat) ≤ 2.4V
G
@VGE = 15V, IC = 10A
E
n-channel
Description
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have
higher usable current densities than comparable bipolar transistors, while at
the same time having simpler gate-drive requirements of the familiar power
MOSFET. They provide substantial benefits to a host of high-voltage, high-
current applications.
TO-220AB
Absolute Maximum Ratings
Parameter
Max.
Units
VCES
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
600
V
IC @ TC = 25°C
19
IC @ TC = 100°C
10
A
ICM
76
ILM
Clamped Inductive Load Current
Gate-to-Emitter Voltage
38
VGE
±20
V
mJ
W
EARV
Reverse Voltage Avalanche Energy
Maximum Power Dissipation
5.0
60
PD @ TC = 25°C
PD @ TC = 100°C Maximum Power Dissipation
24
TJ
Operating Junction and
-55 to +150
TSTG
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting torque, 6-32 or M3 screw.
°C
300 (0.063 in. (1.6mm) from case)
10 lbf•in (1.1N•m)
Thermal Resistance
Parameter
Junction-to-Case
Min.
—
Typ.
—
Max.
2.1
—
Units
RθJC
RθCS
RθJA
Wt
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
—
0.50
°C/W
—
—
80
—
2.0 (0.07)
—
g (oz)
Revision 0
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IRGBC20S
Electrical Characteristics @ T = 25°C (unless otherwise specified)
J
Parameter
Min. Typ. Max. Units
Conditions
VGE = 0V, IC = 250µA
VGE = 0V, IC = 1.0A
V(BR)CES
V(BR)ECS
Collector-to-Emitter Breakdown Voltage
Emitter-to-Collector Breakdown Voltage
600
20
—
—
—
—
—
V
V
∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage
0.75
1.8
2.4
1.9
—
—
V/°C VGE = 0V, IC = 1.0mA
IC = 10A
VCE(on)
Collector-to-Emitter Saturation Voltage
—
2.4
—
VGE = 15V
—
V
IC = 19A
See Fig. 2, 5
—
—
IC = 10A, TJ = 150°C
VCE = VGE, IC = 250µA
VGE(th)
Gate Threshold Voltage
3.0
—
5.5
—
∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage
-11
mV/°C VCE = VGE, IC = 250µA
gfe
Forward Transconductance
2.0 5.8
—
S
VCE = 100V, IC = 10A
VGE = 0V, VCE = 600V
ICES
Zero Gate Voltage Collector Current
—
—
—
—
—
—
250
1000
µA
VGE = 0V, VCE = 600V, TJ = 150°C
VGE = ±20V
IGES
Gate-to-Emitter Leakage Current
±100 nA
Switching Characteristics @ T = 25°C (unless otherwise specified)
J
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Min. Typ. Max. Units
Conditions
Qg
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
16
2.3
7.0
24
26
4.0
12
—
IC = 10A
Qge
Qgc
td(on)
tr
nC
ns
VCC = 400V
VGE = 15V
TJ = 25°C
See Fig. 8
23
—
IC = 10A, VCC = 480V
VGE = 15V, RG = 50Ω
Energy losses include "tail"
td(off)
tf
Turn-Off Delay Time
Fall Time
820 1200
910 1600
Eon
Eoff
Ets
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
0.24
3.9
—
—
6.0
—
—
—
—
—
—
—
—
—
mJ
ns
See Fig. 9, 10, 11, 14
4.1
td(on)
tr
td(off)
tf
26
TJ = 150°C,
30
IC = 10A, VCC = 480V
VGE = 15V, RG = 50Ω
Energy losses include "tail"
See Fig. 10, 14
Turn-Off Delay Time
Fall Time
1100
1800
7.0
Ets
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
mJ
nH
LE
7.5
Measured 5mm from package
VGE = 0V
Cies
Coes
Cres
360
36
Output Capacitance
Reverse Transfer Capacitance
pF
VCC = 30V
ƒ = 1.0MHz
See Fig. 7
5.2
Notes:
Repetitive rating; V GE=20V, pulse width
limited by max. junction temperature.
( See fig. 13b )
Pulse width 5.0µs,
single shot.
Repetitive rating; pulse width limited
by maximum junction temperature.
VCC=80%(VCES), VGE=20V, L=10µH,
Pulse width ≤ 80µs; duty factor ≤ 0.1%.
RG= 50Ω, ( See fig. 13a )
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IRGBC20S
25
20
For both:
Triangular w ave:
Du ty cycle: 50%
T
T
= 125°C
J
= 9 0°C
sin k
Ga te drive a s specified
Power Dissipation = 13W
Clamp voltage:
80% of rated
15
Square wave:
60% of rated
voltage
10
5
Ideal diodes
0
0.1
1
10
100
f, Frequency (kH z)
Fig. 1 - Typical Load Current vs. Frequency
(For square wave, I=IRMS of fundamental; for triangular wave, I=I PK
)
100
10
1
100
T
= 25°C
J
T
= 150°C
J
10
T
= 150°C
J
T
J
= 25°C
1
V
= 100V
V
= 15V
C C
G E
20µs P ULSE W IDTH
5µs PULSE W IDTH
0.1
5
10
15 20
1
10
V
, G ate-to-E m itter Voltage (V)
VCE , Collector-to-Emitter Voltage (V)
G E
Fig. 3 - Typical Transfer Characteristics
Fig. 2 - Typical Output Characteristics
C-5
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IRGBC20S
20
16
12
8
3.0
2.5
2.0
1.5
1.0
V
= 15V
V
= 15V
G E
G E
80µs P ULSE W IDTH
I
= 20A
C
I
= 10A
= 5.0A
C
C
4
I
0
-60 -40 -20
0
20
40
60
80 1 00 120 140 160
25
50
75
100
125
150
TC , Case Temperature (°C)
T
, Case Temperature (°C)
C
Fig. 5 - Collector-to-Emitter Voltage vs.
Fig. 4 - Maximum Collector Current vs.
Case Temperature
Case Temperature
10
D
=
0 .50
0.20
1
0.1 0
0 .05
P
D M
0.1
0 .02
0.0 1
t
1
S IN G LE PU L SE
t
(T HE R M A L R ES PO N S E)
2
N otes:
1 . D uty factor D
=
t
/ t
1
2
2. Pea k T = P
x Z
+ T
C
D M
J
thJC
1
0.01
0.00001
0.0001
0.001
0.01
0.1
10
t
, Rectangular Pulse D ura tion (sec)
1
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRGBC20S
20
16
12
8
700
V
C
C
C
= 0V,
f = 1MHz
V
I
= 480V
= 10A
CE
C
GE
ies
res
oes
= C + C
,
C
SHORTED
ge
gc
ce
= C
gc
600
500
400
300
200
100
0
= C + C
ce
gc
C
ies
C
oes
res
C
4
0
0
4
8
12
16
20
1
1 0
100
Q
g
, Total G ate Charge (nC)
VCE , Collector-to-Emitter Voltage (V)
Fig. 7 - Typical Capacitance vs.
Fig. 8 - Typical Gate Charge vs.
Collector-to-Emitter Voltage
Gate-to-Emitter Voltage
4.2
4.0
3.8
3.6
100
10
1
V
V
T
I
= 480V
= 15V
= 25°C
= 10A
Ω
= 50
= 15V
= 480V
R
V
V
CC
G E
C
G
GE
CC
C
I
= 20A
= 10A
= 5.0A
C
C
C
I
I
20
30
40
50
60
-60 -40 -20
0
20
40
60
80 100 120 140 160
T , Case Temperature (°C)
R G , Gate Resistance (
)
Ω
C
W
Fig. 9 - Typical Switching Losses vs. Gate
Fig. 10 - Typical Switching Losses vs.
Resistance
Case Temperature
C-7
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IRGBC20S
15
100
10
1
Ω
R
T
V
V
= 50
V
T
= 20V
G E
G
= 150°C
= 480V
= 15V
= 125°C
C
J
CC
G E
12
9
SAFE OP ERA TING ARE A
6
3
0
1
10
100
1000
4
8
12
16
20
24
V
, Collector-to-Em itter Voltage (V)
I
, Collector-to-Em itter C urrent (A )
C E
C
Fig. 11 - Typical Switching Losses vs.
Fig. 12 - Turn-Off SOA
Collector-to-Emitter Current
Refer to Section D for the following:
Appendix C: Section D - page D-5
Fig. 13a - Clamped Inductive Load Test Circuit
Fig. 13b - Pulsed Collector Current Test Circuit
Fig. 14a - Switching Loss Test Circuit
Fig. 14b - Switching Loss Waveform
Package Outline 1 - JEDEC Outline TO-220AB
Section D - page D-12
C-8
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