IRGBC20SD2-E [INFINEON]
Insulated Gate Bipolar Transistor, 19A I(C), 600V V(BR)CES, N-Channel, TO-247AD;
| 型号： | IRGBC20SD2-E |
| 厂家： | 
Infineon |
| 描述： | Insulated Gate Bipolar Transistor, 19A I(C), 600V V(BR)CES, N-Channel, TO-247AD 栅 |
| 文件： | 总10页 (文件大小：257K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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