IRGBC20MD2 [INFINEON]
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY(Vces=600V, @Vge=15V, Ic=8.0A); 超快软恢复绝缘栅双极晶体管（ VCES = 600V ， VGE @ = 15V ， IC = 8.0A ）
| 型号： | IRGBC20MD2 |
| 厂家： | 
Infineon |
| 描述： | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY(Vces=600V, @Vge=15V, Ic=8.0A) |
| 文件： | 总8页 (文件大小：378K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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PD - 9.1106
IRGBC20MD2
Short Circuit Rated
Fast Copack IGBT
INSULATED GATE BIPOLAR TRANSISTOR
WITH ULTRAFAST SOFT RECOVERY
DIODE
Features
C
VCES = 600V
• Short circuit rated -10µs @125°C, V GE = 15V
• Switching-loss rating includes all "tail" losses
• HEXFREDTM soft ultrafast diodes
• Optimized for medium operating frequency (1 to
10kHz) See Fig. 1 for Current vs. Frequency curve
V
CE(sat) ≤ 2.5V
G
@VGE = 15V, IC = 8.0A
E
n-channel
Description
Co-packaged IGBTs are a natural extension of International Rectifier's well
known IGBT line. They provide the convenience of an IGBT and an ultrafast
recovery diode in one package, resulting in substantial benefits to a host of
high-voltage, high-current, applications.
These new short circuit rated devices are especially suited for motor control
and other applications requiring short circuit withstand capability.
TO-220AB
Absolute Maximum Ratings
Parameter
Max.
Units
VCES
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
600
V
IC @ TC = 25°C
13
IC @ TC = 100°C
8.0
ICM
26
A
ILM
Clamped Inductive Load Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Short Circuit Withstand Time
Gate-to-Emitter Voltage
26
IF @ TC = 100°C
7.0
IFM
60
tsc
10
± 20
µs
V
VGE
PD @ TC = 25°C
Maximum Power Dissipation
60
W
PD @ TC = 100°C Maximum Power Dissipation
24
TJ
Operating Junction and
-55 to +150
TSTG
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
°C
300 (0.063 in. (1.6mm) from case)
10 lbf•in (1.1 N•m)
Thermal Resistance
Parameter
Min.
Typ.
—
Max.
Units
RθJC
RθJC
RθCS
RθJA
Wt
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
—
—
—
—
—
2.1
3.5
—
—
°C/W
0.50
—
80
—
2 (0.07)
g (oz)
Revision
2
C-349
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IRGBC20MD2
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)CES
Collector-to-Emitter Breakdown Voltage
600
—
—
—
—
V
VGE = 0V, IC = 250µA
∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage
0.42
V/°C VGE = 0V, IC = 1.0mA
IC = 8.0A
VCE(on)
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
—
2.0 2.5
VGE = 15V
—
2.7
2.5
—
—
—
V
IC = 13A
See Fig. 2, 5
—
IC = 8.0A, TJ = 150°C
VCE = VGE, IC = 250µA
VGE(th)
3.0
—
5.5
—
∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage
-11
3.8
—
mV/°C VCE = VGE, IC = 250µA
gfe
Forward Transconductance
2.7
—
—
S
VCE = 100V, IC = 8.0A
VGE = 0V, VCE = 600V
ICES
Zero Gate Voltage Collector Current
250
1700
µA
—
—
VGE = 0V, VCE = 600V, TJ = 150°C
VFM
IGES
Diode Forward Voltage Drop
—
1.4 1.7
1.4 1.7
V
IC = 8.0A
See Fig. 13
—
IC = 8.0A, TJ = 150°C
VGE = ±20V
Gate-to-Emitter Leakage Current
—
—
±100 nA
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Qg
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
—
—
—
—
—
—
—
—
—
—
10
16
24
IC = 8.0A
Qge
Qgc
td(on)
tr
3.6 5.2
6.0 9.0
nC
ns
VCC = 400V
See Fig. 8
TJ = 25°C
66
40
—
—
IC = 8.0A, VCC = 480V
VGE = 15V, RG = 50Ω
Energy losses include "tail" and
diode reverse recovery.
See Fig. 9, 10, 11, 18
td(off)
tf
Turn-Off Delay Time
Fall Time
330 540
260 480
Eon
Eoff
Ets
tsc
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Short Circuit Withstand Time
0.5
1.0
—
—
mJ
µs
1.5 2.5
—
—
VCC = 360V, TJ = 125°C
VGE = 15V, RG = 50Ω, VCPK < 500V
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
65
46
—
—
—
—
—
—
—
—
—
55
90
TJ = 150°C,
See Fig. 9, 10, 11, 18
ns
IC = 8.0A, VCC = 480V
VGE = 15V, RG = 50Ω
Energy losses include "tail" and
diode reverse recovery.
Measured 5mm from package
VGE = 0V
Turn-Off Delay Time
Fall Time
520
560
2.3
7.5
365
47
Ets
LE
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
mJ
nH
Cies
Coes
Cres
trr
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
pF
ns
A
VCC = 30V
See Fig. 7
4.8
37
ƒ = 1.0MHz
TJ = 25°C See Fig.
55
TJ = 125°C
TJ = 25°C See Fig.
TJ = 125°C 15
TJ = 25°C See Fig.
TJ = 125°C 16
A/µs TJ = 25°C See Fig.
TJ = 125°C 17
14
IF = 8.0A
Irr
Diode Peak Reverse Recovery Current
Diode Reverse Recovery Charge
3.5 5.0
4.5 8.0
V R = 200V
Qrr
65
138
nC
124 360
di/dt = 200A/µs
di(rec)M/dt
Notes:
Diode Peak Rate of Fall of Recovery
During tb
240
210
—
—
Pulse width 5.0µs,
single shot.
VCC=80%(VCES), VGE=20V, L=10µH,
RG= 50Ω, ( See fig. 19 )
Repetitive rating; V GE=20V, pulse width limited
by max. junction temperature. ( See fig. 20 )
Pulse width ≤ 80µs; duty factor ≤ 0.1%.
C-350
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IRGBC20MD2
A
10
8
D u ty c ycle : 5 0%
T
T
=
1 25 °C
9 0°C
J
=
sink
G a te d rive a s sp e cifie d
Tu rn -on losses in clud e
effe cts o f reve rse reco ve ry
P o w e r D issip ation
= 1 3W
6
60% o f ra ted
voltage
4
2
0
0.1
1
10
100
f, Frequency (kHz)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
100
100
T = 25°C
J
T = 150°C
J
T = 150°C
J
10
10
TJ = 25°C
VGE = 15V
20µs PULSE WIDTH
VCC = 100V
5µs PULSE WIDTH
A
A
1
1
1
10
5
10
15
20
V
, Collector-to-Emitter Voltage (V)
V
, Gate-to-Emitter Voltage (V)
CE
GE
Fig. 3 - Typical Transfer Characteristics
Fig. 2 - Typical Output Characteristics
C-351
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IRGBC20MD2
5.0
4.0
3.0
2.0
1.0
0.0
14
12
10
8
VGE = 15V
80µs PULSE WIDTH
VGE = 15V
IC = 16A
IC = 8.0A
IC = 4.0A
6
4
2
A
A
0
-60 -40 -20
0
20 40 60 80 100 120 140 160
25
50
75
100
125
150
T , Case Temperature (°C)
T , Case Temperature (°C)
C
C
Fig. 5 - Collector-to-Emitter Voltage vs.
Fig. 4 - Maximum Collector Current vs.
Case Temperature
Case Temperature
10
D = 0.50
1
0.20
0.10
0.05
P
DM
0.1
0.02
0.01
t
1
SINGLE PULSE
t
(THERMAL RESPONSE)
2
Notes:
1. D uty factor D
=
t
/ t
1
2
2. P eak T = P
x Z
+ T
C
DM
J
thJC
1
0.01
0.00001
0.0001
0.001
0.01
0.1
10
t1 , Rectangular Pulse Duration (sec)
Fig. 6 - Maximum IGBT Effective Transient Thermal Impedance, Junction-to-Case
C-352
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IRGBC20MD2
600
20
16
12
8
V
C
C
C
= 0V,
f = 1MHz
GE
ies
res
oes
VCE = 400V
IC = 8.0A
= C + C
,
C
ce
SHORTED
ge
gc
gc
= C
= C + C
ce
gc
C
ies
400
200
0
C
oes
4
C
res
A
A
0
1
10
100
0
4
8
12
16
20
V
, Collector-to-Emitter Voltage (V)
Q , Total Gate Charge (nC)
g
CE
Fig. 7 - Typical Capacitance vs.
Fig. 8 - Typical Gate Charge vs.
Collector-to-Emitter Voltage
Gate-to-Emitter Voltage
1.64
10
VCC = 480V
VGE = 15V
TC = 25°C
IC = 8.0A
RG = 50Ω
VGE = 15V
VCC = 480V
IC = 16A
1.62
1.60
1.58
1.56
IC = 8.0A
IC = 4.0A
1
A
0.1
0
10
20
30
40
50
60
-60 -40 -20
0
20 40 60 80 100 120 140 160
T , Case Temperature (°C)
R
, Gate Resistance (Ω)
G
C
W
Fig. 9 - Typical Switching Losses vs. Gate
Fig. 10 - Typical Switching Losses vs.
Resistance
Case Temperature
C-353
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IRGBC20MD2
6.0
100
10
1
Ω
RG = 50
VGE = 20V
TJ = 125°C
TC = 150°C
VCC = 480V
VGE = 15V
4.0
2.0
0.0
SAFE OPERATING AREA
A
A
1
10
100
1000
0
4
8
12
16
20
V
, Collector-to-Emitter Voltage (V)
I
, Collector-to-Emitter Current (A)
CE
C
Fig. 12 - Turn-Off SOA
Fig. 11 - Typical Switching Losses vs.
Collector-to-Emitter Current
100
10
1
T = 150°C
J
T = 125°C
J
T = 25°C
J
0.1
0.4
0.8
1.2
1.6
2.0
2.4
2.8
3.2
Forward Voltage Drop - V
(V)
FM
Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current
C-354
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IRGBC20MD2
100
10
1
100
VR = 200V
TJ = 125°C
TJ = 25°C
VR = 200V
TJ = 125°C
TJ = 25°C
80
60
40
I
F
= 16A
I
= 8.0A
F
I
= 16A
F
I
= 8.0A
F
I
= 4.0A
F
I
= 4.0A
F
20
0
100
1000
100
1000
di /dt - (A/µs)
f
di /dt - (A/µs)
f
Fig. 15 - Typical Recovery Current vs. dif/dt
Fig. 14 - Typical Reverse Recovery vs. dif/dt
10000
500
VR = 200V
TJ = 125°C
TJ = 25°C
VR = 200V
TJ = 125°C
TJ = 25°C
400
300
I
= 4.0A
= 8.0A
F
I
= 16A
F
1000
I
F
200
100
0
I
= 16A
F
I
= 8.0A
F
I
= 4.0A
F
100
100
100
1000
1000
di /dt - (A/µs)
di /dt - (A/µs)
f
f
Fig. 16 - Typical Stored Charge vs. dif/dt
Fig. 17 - Typical di(rec)M/dt vs. dif/dt
C-355
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IRGBC20MD2
90% Vge
+Vge
Same type
device as
D.U.T.
Vce
90% Ic
10% Vce
430µF
80%
Ic
Ic
of Vce
D.U.T.
5% Ic
td(off)
tf
t1+5µS
Eoff = Vce ic dt
t1
Fig. 18a - Test Circuit for Measurement of
ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf
t1
t2
Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining
Eoff, td(off), tf
trr
id dt
tx
trr
GATE VOLTAGE D.U.T.
Qrr =
Ic
10% +Vg
+Vg
tx
10% Irr
10% Vcc
Vcc
DUT VOLTAGE
AND CURRENT
Vce
Vpk
Irr
10% Ic
Vcc
Ipk
90% Ic
Ic
DIODE RECOVERY
WAVEFORMS
5% Vce
tr
td(on)
t2
Vce ie dt
Eon =
t2
t4
Erec = Vd id dt
t3
t1
DIODE REVERSE
t1
RECOVERY ENERGY
t3
t4
Fig. 18c - Test Waveforms for Circuit of Fig. 18a,
Defining Eon, td(on), tr
Fig. 18d - Test Waveforms for Circuit of Fig. 18a,
Defining Erec, trr, Qrr, Irr
Refer to Section D for the following:
Appendix D: Section D - page D-6
Fig. 18e - Macro Waveforms for Test Circuit Fig. 18a
Fig. 19 - Clamped Inductive Load Test Circuit
Fig. 20 - Pulsed Collector Current Test Circuit
Package Outline 1 - JEDEC Outline TO-220AB
Section D - page D-12
C-356
To Order
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