概述
数据手册IRGI4086PBF 概述
PDP TRENCH IGBT PDP TRENCH IGBT
IRGI4086PBF 数据手册
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IRGI4086PbF
PDP TRENCH IGBT
Key Parameters
Features
VCE min
V
300
V
V
l
Advanced Trench IGBT Technology
l
Optimized for Sustain and Energy Recovery
Circuits in PDP Applications
CE(ON) typ. @ IC = 25A
1.29
IRP max @ TC= 25°C
TJ max
A
°C
230
150
TM
l
Low VCE(on) and Energy per Pulse (EPULSE
for Improved Panel Efficiency
)
l
l
High Repetitive Peak Current Capability
Lead Free Package
C
E
C
G
G
TO-220AB
Full-Pak
E
n-channel
G
C
E
Gate
Collector
Emitter
Description
This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced
trenchIGBTtechnologytoachievelowVCE(on)andlowEPULSETM ratingpersiliconareawhichimprovepanel
efficiency. Additional features are 150°C operating junction temperature and high repetitive peak current
capability. These features combine to make this IGBT a highly efficient, robust and reliable device for PDP
applications.
Absolute Maximum Ratings
Max.
Parameter
Units
VGE
±30
Gate-to-Emitter Voltage
V
IC @ TC = 25°C
IC @ TC = 100°C
IRP @ TC = 25°C
PD @TC = 25°C
PD @TC = 100°C
Continuous Collector Current, VGE @ 15V
Continuous Collector, VGE @ 15V
Repetitive Peak Current
25
12
230
A
43
Power Dissipation
W
17
Power Dissipation
0.34
Linear Derating Factor
W/°C
TJ
-40 to + 150
Operating Junction and
TSTG
°C
N
Storage Temperature Range
Soldering Temperature for 10 seconds
Mounting Torque, 6-32 or M3 Screw
300
10lb in (1.1N m)
Thermal Resistance
Parameter
Typ.
–––
Max.
2.9
Units
°C/W
RθJC
Junction-to-Case
www.irf.com
1
02/02/09
IRGI4086PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Conditions
VGE = 0V, ICE = 1 mA
Parameter
Collector-to-Emitter Breakdown Voltage 300
Min. Typ. Max. Units
BVCES
–––
–––
–––
V
Reference to 25°C, ICE = 1mA
VGE = 15V, ICE = 12A
V
/ T
∆
J
∆Β
Breakdown Voltage Temp. Coefficient
Static Collector-to-Emitter Voltage
–––
–––
–––
–––
–––
–––
–––
2.6
–––
–––
–––
–––
–––
–––
–––
–––
–––
—
0.29
V/°C
CES
1.10 1.36
1.29 1.55
1.49 1.67
1.90 2.10
2.57 2.96
VGE = 15V, ICE = 25A
VGE = 15V, ICE = 40A
VCE(on)
V
VGE = 15V, ICE = 70A
VGE = 15V, ICE = 120A
VGE = 15V, ICE = 70A, TJ = 150°C
2.27
–––
-11
2.0
5.0
100
–––
–––
29
–––
5.0
VCE = VGE, ICE = 500µA
VGE(th)
Gate Threshold Voltage
V
V
/ T
∆
J
∆
Gate Threshold Voltage Coefficient
Collector-to-Emitter Leakage Current
––– mV/°C
GE(th)
VCE = 300V, VGE = 0V
ICES
25
–––
–––
100
-100
–––
–––
–––
—
µA
VCE = 300V, VGE = 0V, TJ = 100°C
VCE = 300V, VGE = 0V, TJ = 150°C
V
V
V
V
GE = 30V
IGES
Gate-to-Emitter Forward Leakage
Gate-to-Emitter Reverse Leakage
Forward Transconductance
Total Gate Charge
Gate-to-Collector Charge
Turn-On delay time
Rise time
nA
GE = -30V
CE = 25V, ICE = 25A
CE = 200V, IC = 25A, VGE = 15V
gfe
Qg
Qgc
td(on)
tr
S
65
nC
22
IC = 25A, VCC = 196V
36
R = 10 , L=200µH, L = 200nH
Ω
—
31
—
ns
ns
G
S
td(off)
tf
td(on)
tr
td(off)
tf
TJ = 25°C
Turn-Off delay time
Fall time
—
112
65
—
—
—
IC = 25A, VCC = 196V
Turn-On delay time
Rise time
—
30
—
R = 10 , L=200µH, L = 200nH
Ω
—
33
—
G
S
TJ = 150°C
Turn-Off delay time
Fall time
—
145
98
—
—
—
tst
VCC = 240V, VGE = 15V, RG= 5.1Ω
L = 220nH, C= 0.40µF, VGE = 15V
VCC = 240V, RG= 5.1Ω, TJ = 25°C
L = 220nH, C= 0.40µF, VGE = 15V
VCC = 240V, RG= 5.1Ω, TJ = 100°C
VGE = 0V
Shoot Through Blocking Time
100
–––
–––
ns
µJ
––– 1075 –––
EPULSE
Energy per Pulse
––– 1432 –––
––– 2250 –––
Ciss
Coss
Crss
LC
Input Capacitance
VCE = 30V
Output Capacitance
–––
–––
–––
110
58
–––
–––
–––
pF
ƒ = 1.0MHz,
See Fig.13
Reverse Transfer Capacitance
Internal Collector Inductance
5.0
Between lead,
nH 6mm (0.25in.)
from package
LE
Internal Emitter Inductance
–––
13
–––
and center of die contact
Notes:
Pulse width ≤ 400µs; duty cycle ≤ 2%.
Half sine wave with duty cycle = 0.1, ton=2µsec.
R is measured at TJ of approximately 90°C.
θ
2
www.irf.com
IRGI4086PbF
240
200
160
120
80
240
200
160
120
80
V
V
V
V
V
V
= 18V
= 15V
= 12V
= 10V
= 8.0V
= 6.0V
V
V
V
V
V
V
= 18V
= 15V
= 12V
= 10V
= 8.0V
= 6.0V
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
40
40
0
0
0
4
8
12
16
0
4
8
12
16
V
(V)
V
(V)
CE
CE
Fig 2. Typical Output Characteristics @ 75°C
Fig 1. Typical Output Characteristics @ 25°C
240
240
V
V
V
V
V
V
= 18V
= 15V
= 12V
= 10V
= 8.0V
= 6.0V
V
V
V
V
V
V
= 18V
= 15V
= 12V
= 10V
= 8.0V
= 6.0V
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
200
160
120
80
200
160
120
80
40
40
0
0
0
4
8
12
16
0
4
8
12
16
V
(V)
V
(V)
CE
CE
Fig 3. Typical Output Characteristics @ 125°C
Fig 4. Typical Output Characteristics @ 150°C
240
200
10
I
= 25A
C
8
6
4
2
0
T
T
= 25°C
J
J
= 150°C
160
120
80
T
T
= 25°C
J
J
= 150°C
40
0
5
10
15
20
2
4
6
8
10
12
14
16
V
(V)
V
(V)
GE
GE
Fig 5. Typical Transfer Characteristics
Fig 6. VCE(ON) vs. Gate Voltage
www.irf.com
3
IRGI4086PbF
240
220
200
180
160
140
120
100
80
30
25
20
15
10
5
ton= 2µs
Duty cycle <= 0.05
Half Sine Wave
60
40
20
0
0
0
25
50
75
(°C)
100
125
150
25
50
75
100
125
150
T
C
Case Temperature (°C)
Fig 8. Typical Repetitive Peak Current vs. Case Temperature
Fig 7. Maximum Collector Current vs. Case Temperature
1500
1600
L = 220nH
C = 0.4µF
V
= 240V
1400
1300
1200
1100
1000
900
CC
1400
1200
1000
800
L = 220nH
C = variable
100°C
100°C
25°C
800
25°C
600
700
600
400
500
200
400
150 160 170 180 190 200 210 220 230 240
Collector-to-Emitter Voltage (V)
160 170 180 190 200 210 220 230
V
I , Peak Collector Current (A)
C
CE,
Fig 9. Typical EPULSE vs. Collector Current
Fig 10. Typical EPULSE vs. Collector-to-Emitter Voltage
2000
1000
V
= 240V
CC
L = 220nH
t = 1µs half sine
C= 0.4µF
1600
1200
800
400
0
100
10µsec
100µsec
1msec
10
C= 0.3µF
C= 0.2µF
125
1
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
25
50
75
100
150
1
10
100
1000
T , Temperature (ºC)
J
V
(V)
CE
Fig 11. EPULSE vs. Temperature
Fig 12. Forward Bias Safe Operating Area
4
www.irf.com
IRGI4086PbF
25
20
15
10
5
10000
1000
100
I
= 25A
D
V
V
V
= 240V
= 200V
= 150V
DS
DS
DS
Cies
Coes
Cres
0
10
0
20
40
60
80
100
0
100
200
300
Q
Total Gate Charge (nC)
G
V
(V)
CE
Fig 13. Typical Capacitance vs. Collector-to-Emitter Voltage
10
Fig 14. Typical Gate Charge vs. Gate-to-Emitter Voltage
D = 0.50
1
0.20
0.10
0.05
0.1
R1
R1
R2
R2
R3
R3
R4
R4
Ri (°C/W) τi (sec)
0.02
0.12489 0.00005
τ
τ
J τJ
τ
Cτ
0.01
0.35135 0.001807
1.07738 0.133584
τ
1τ1
τ
τ
2 τ2
3τ3
4τ4
Ci= τi/Ri
1.34638
2.34
0.01
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
100
t
, Rectangular Pulse Duration (sec)
1
Fig 15. Maximum Effective Transient Thermal Impedance, Junction-to-Case (IGBT)
www.irf.com
5
IRGI4086PbF
A
RG
C
PULSE A
PULSE B
DRIVER
L
VCC
B
Ipulse
RG
DUT
tST
Fig 16b. tst Test Waveforms
Fig 16a. tst and EPULSE Test Circuit
VCE
Energy
IC Current
L
VCC
DUT
0
1K
Fig 16c. EPULSE Test Waveforms
Fig. 17 - Gate Charge Circuit (turn-off)
6
www.irf.com
IRGI4086PbF
TO-220 Full-Pak Package Outline
Dimensions are shown in millimeters (inches)
TO-220 Full-Pak Part Marking Information
TO-220AB Full-Pak package is not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
The specifications set forth in this data sheet are the sole and
exclusive specifications applicable to the identified product,
and no specifications or features are implied whether by
industry custom, sampling or otherwise. We qualify our
products in accordance with our internal practices and
procedures, which by their nature do not include qualification
to all possible or even all widely used applications. Without
limitation, we have not qualified our product for medical use or
applications involving hi-reliability applications. Customers
are encouraged to and responsible for qualifying product to
their own use and their own application environments,
especially where particular features are critical to operational
performance or safety. Please contact your IR representative
if you have specific design or use requirements or for further
information.
Data and specifications subject to change without notice.
This product has been designed for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.02/2009
www.irf.com
7
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