IRGI4090PBF [INFINEON]
IRGI4090PbF Low VCE(on) and Energy per Pulse (EPULSE; IRGI4090PbF低VCE （ on）和能源每脉冲（ EPULSE
| 型号： | IRGI4090PBF |
| 厂家： | 
Infineon |
| 描述： | IRGI4090PbF Low VCE(on) and Energy per Pulse (EPULSE |
| 文件： | 总7页 (文件大小：373K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 97318A
IRGI4090PbF
PDP TRENCH IGBT
Key Parameters
Features
VCE min
300
V
V
l
Advanced Trench IGBT Technology
l
Optimized for Sustain and Energy Recovery
circuits in PDP applications
VCE(ON) typ. @ IC = 11A
1.20
140
150
I
RP max @ TC= 25°C
A
TM
l
Low VCE(on) and Energy per Pulse (EPULSE
for improved panel efficiency
)
TJ max
°C
l
l
High repetitive peak current capability
Lead Free package
C
E
C
G
G
TO-220AB
Full-Pak
E
n-channel
G
C
E
Gate
Collector
Emitter
Description
This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced
trenchIGBTtechnologytoachievelowVCE(on) andlowEPULSETM ratingpersiliconareawhichimprovepanel
efficiency. Additional features are 150°C operating junction temperature and high repetitive peak current
capability. These features combine to make this IGBT a highly efficient, robust and reliable device for PDP
applications.
Absolute Maximum Ratings
Max.
Parameter
Units
VGE
30
Gate-to-Emitter Voltage
V
A
IC @ TC = 25°C
IC @ TC = 100°C
IRP @ TC = 25°C
PD @TC = 25°C
PD @TC = 100°C
Continuous Collector Current, VGE @ 15V
Continuous Collector, VGE @ 15V
Repetitive Peak Current c
Power Dissipation
21
11
140
34
W
14
Power Dissipation
0.27
Linear Derating Factor
W/°C
°C
TJ
-40 to + 150
Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature for 10 seconds
Mounting Torque, 6-32 or M3 Screw
300
10lbxin (1.1Nxm)
N
Thermal Resistance
Parameter
Junction-to-Case d
Typ.
–––
Max.
Units
RθJC
3.65
°C/W
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1
06/13/08
IRGI4090PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Conditions
VGE = 0V, ICE = 500µA
GE = 0V, ICE = 1.0A
Reference to 25°C, ICE = 5.0µA
Parameter
Min. Typ. Max. Units
BVCES
Collector-to-Emitter Breakdown Voltage
Emitter-to-Collector Breakdown Voltagee
Breakdown Voltage Temp. Coefficient
300
30
–––
–––
–––
–––
–––
–––
V
V
V
V(BR)ECS
∆ΒVCES/∆TJ
–––
–––
–––
0.30
1.20
V/°C
VGE = 15V, ICE = 11A e
GE = 15V, ICE = 30A e
V
1.67 1.94
VGE = 15V, ICE = 60A e
GE = 15V, ICE = 90A e
2.43
3.35
4.50
4.75
–––
-12
2.0
5.0
100
–––
–––
11
–––
–––
–––
–––
5.0
V
VCE(on)
Static Collector-to-Emitter Voltage
V
–––
–––
–––
2.6
VGE = 15V, ICE = 120A e
VGE = 15V, ICE = 90A, TJ = 150°C e
VCE = VGE, ICE = 250µA
VGE(th)
Gate Threshold Voltage
V
∆VGE(th)/∆TJ
ICES
Reference to 25°C
––– mV/°C
Gate Threshold Voltage Coefficient
Collector-to-Emitter Leakage Current
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
100
VCE = 300V, VGE = 0V
5.0
–––
–––
100
-100
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
µA
VCE = 300V, VGE = 0V, TJ = 100°C
VCE = 300V, VGE = 0V, TJ = 150°C
VGE = 30V
IGES
Gate-to-Emitter Forward Leakage
Gate-to-Emitter Reverse Leakage
Forward Transconductance
Total Gate Charge
Gate-to-Collector Charge
Turn-On delay time
Rise time
nA
VGE = -30V
VCE = 25V, ICE = 11A
gfe
Qg
Qgc
td(on)
tr
S
VCE = 200V, IC = 11A, VGE = 15Ve
34
nC
9.6
20
IC = 11A, VCC = 240V
RG = 10Ω, L=200µH, LS= 150nH
TJ = 25°C
14
ns
ns
td(off)
tf
td(on)
tr
td(off)
tf
Turn-Off delay time
Fall time
99
68
IC = 11A, VCC = 240V
RG = 10Ω, L=200µH, LS= 150nH
TJ = 150°C
Turn-On delay time
Rise time
19
15
Turn-Off delay time
Fall time
139
129
–––
VCC = 240V, VGE = 15V, RG= 5.1Ω
tst
Shoot Through Blocking Time
ns
µJ
L =220nH, C= 0.10µF, VGE = 15V
–––
–––
549
637
–––
–––
V
CC = 240V, RG= 5.10Ω, TJ = 25°C
L =220nH, C= 0.10µF, VGE = 15V
CC = 240V, RG= 5.10Ω, TJ = 100°C
VGE = 0V
CE = 30V
EPULSE
Energy per Pulse
V
Cies
Coes
Cres
LC
Input Capacitance
––– 1153 –––
V
Output Capacitance
–––
–––
–––
59
27
–––
–––
–––
pF
ƒ = 1.0MHz,
See Fig.13
Reverse Transfer Capacitance
Internal Collector Inductance
4.5
Between lead,
nH 6mm (0.25in.)
from package
LE
Internal Emitter Inductance
–––
7.5
–––
and center of die contact
Notes:
Half sine wave with duty cycle = 0.05, PW=2µsec.
R is measured at TJ of approximately 90°C.
θ
Pulse width ≤ 400µs; duty cycle ≤ 2%.
2
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IRGI4090PbF
280
240
200
160
120
80
320
280
240
200
160
120
80
Top
VGE = 18V
Top
VGE = 18V
V
= 15V
= 12V
= 10V
= 8.0V
= 6.0V
V
V
V
V
V
= 15V
= 12V
= 10V
= 8.0V
= 6.0V
GE
GE
GE
GE
GE
GE
V
GE
V
GE
V
GE
Bottom
V
Bottom
GE
40
40
0
0
0
5
10
15
20
25
30
0
5
10
15
20
25
30
V
(V)
V
(V)
CE
CE
Fig 2. Typical Output Characteristics @ 75°C
Fig 1. Typical Output Characteristics @ 25°C
240
280
Top
VGE = 18V
Top
VGE = 18V
V
= 15V
= 12V
= 10V
= 8.0V
= 6.0V
V
= 15V
= 12V
= 10V
= 8.0V
= 6.0V
GE
GE
240
200
160
120
80
200
160
120
80
V
V
GE
GE
V
V
GE
GE
V
V
GE
GE
Bottom
V
Bottom
V
GE
GE
40
40
0
0
0
5
10
15
20
25
30
0
5
10
15
20
25
30
V
(V)
V
(V)
CE
CE
Fig 3. Typical Output Characteristics @ 125°C
Fig 4. Typical Output Characteristics @ 150°C
20
240
200
I
= 11A
C
15
10
5
T
= 25°C
J
160
120
80
40
0
T
= 150°C
J
T
T
= 25°C
150°C
J
J
0
0
5
10
15
20
0
5
10
15
20
V
(V)
V
(V)
GE
GE
Fig 5. Typical Transfer Characteristics
Fig 6. VCE(ON) vs. Gate Voltage
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3
IRGI4090PbF
25
160
140
120
100
80
PW= 2µs
Duty cycle <= 0.05
Half Sine Wave
20
15
10
5
60
40
20
0
0
20
40
60
80 100 120 140 160
(°C)
25
50
75
100
125
150
T
Case Temperature (°C)
C
Fig 8. Typical Repetitive Peak Current vs. Case Temperature
8000
Fig 7. Maximum Collector Current vs. Case Temperature
8000
V
= 240V
V
= 240V
CC
CC
7000
6000
5000
4000
3000
2000
1000
0
7000
6000
5000
4000
3000
2000
1000
L = 220nH
C = 0.40µF
L = 220nH
C = variable
100°C
100°C
25°C
25°C
120 125 130 135 140 145 150 155 160 165 170
180
190
200
210
220
230
240
I , Peak Collector Current (A)
c
V
Collector-to-Emitter Voltage (V)
CE,
Fig 9. Typical EPULSE vs. Collector Current
Fig 10. Typical EPULSE vs. Collector-to-Emitter Voltage
9400
1000
V
= 240V
CC
8400
7400
6400
5400
4400
3400
2400
1400
400
L = 220nH
t = 1µs half sine
C= 0.4µF
100
10µsec
100µsec
C= 0.2µF
10
1
1msec
T
= 25°C
C
T
= 150°C
J
C= 0.1µF
125
Single Pulse
25
50
75
100
150
1
10
100
1000
T , Temperature (ºC)
V
(V)
J
CE
Fig 11. EPULSE vs. Temperature
Fig 12. Forrward Bias Safe Operating Area
4
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IRGI4090PbF
10000
1000
100
16
14
12
10
8
V
C
= 0V,
f = 1 MHZ
GS
I
= 11A
V
C
= C + C , C SHORTED
ies
ge gd ce
C
= C
res
gc
= 240V
= 150V
= 60V
C
= C + C
ce gc
CES
oes
V
V
CES
CES
Cies
6
4
Coes
Cres
2
10
0
0
50
100
150
200
0
10
20
30
40
V
, Collector-toEmitter-Voltage(V)
Q
G
, Total Gate Charge (nC)
CE
Fig 13. Typical Capacitance vs. Collector-to-Emitter Voltage Fig 14. Typical Gate Charge vs. Gate-to-Emitter Voltage
10
D = 0.50
1
0.20
0.10
0.05
R1
R1
R2
R2
R3
R3
R4
R4
Ri (°C/W) τi (sec)
0.1
0.01
0.24132 0.000104
τ
0.02
0.01
τ
J τJ
τ
Cτ
0.68173 0.001551
1.10405 0.071769
1τ1
Ci= τi/Ri
τ
τ
τ
2τ2
3τ3
4τ4
SINGLE PULSE
( THERMAL RESPONSE )
1.62289
1.9251
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
100
t
, Rectangular Pulse Duration (sec)
1
Fig 15. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRGI4090PbF
A
RG
C
PULSEA
PULSEB
DRIVER
L
VCC
B
Ipulse
DUT
RG
tST
Fig 16a. tst and EPULSE Test Circuit
Fig 16b. tst Test Waveforms
VCE
Energy
IC Current
L
VCC
DUT
0
1K
Fig 16c. EPULSE Test Waveforms
Fig. 17 - Gate Charge Circuit (turn-off)
6
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IRGI4090PbF
TO-220 Full-Pak Package Outline
Dimensions are shown in millimeters (inches)
TO-220 Full-Pak Part Marking Information
TO-220AB Full-Pak package is not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
The specifications set forth in this data sheet are the sole and
exclusive specifications applicable to the identified product,
and no specifications or features are implied whether by
industry custom, sampling or otherwise. We qualify our
products in accordance with our internal practices and
procedures, which by their nature do not include qualification to
all possible or even all widely used applications. Without
limitation, we have not qualified our product for medical use or
applications involving hi-reliability applications. Customers are
encouraged to and responsible for qualifying product to their
own use and their own application environments, especially
where particular features are critical to operational performance
or safety. Please contact your IR representative if you have
specific design or use requirements or for further information.
Data and specifications subject to change without notice.
This product has been designed for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.06/08
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