IRL5NJ7413 [INFINEON]
HEXFET POWER MOSFET SURFACE MOUNT (SMD-0.5) 30V, N-CHANNEL; HEXFET功率MOSFET表面贴装（ SMD - 0.5 ） 30V的N通道
| 型号： | IRL5NJ7413 |
| 厂家： | 
Infineon |
| 描述： | HEXFET POWER MOSFET SURFACE MOUNT (SMD-0.5) 30V, N-CHANNEL |
| 文件： | 总7页 (文件大小：166K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 94271B
HEXFET® POWER MOSFET
SURFACE MOUNT (SMD-0.5)
IRL5NJ7413
30V, N-CHANNEL
Product Summary
Part Number
BV
DSS
RDS(on)
ID
IRL5NJ7413
30V
0.014Ω
22A*
Fifth Generation HEXFET® power MOSFETs from
International Rectifier utilize advanced processing
techniquestoachievethelowestpossibleon-resistance
per silicon unit area. This benefit, combined with the
fast switching speed and ruggedized device design
that HEXFET power MOSFETs are well known for,
providesthedesignerwithanextremelyefficientdevice
for use in a wide variety of applications.
These devices are well-suited for applications such
as switching power supplies, motor controls, invert-
ers, choppers, audio amplifiers and high-energy pulse
circuits.
SMD-0.5
Features:
n
n
n
n
n
n
n
n
Low RDS(on)
Avalanche Energy Ratings
Dynamic dv/dt Rating
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Surface Mount
Light Weight
Absolute Maximum Ratings
Parameter
Units
I
@ V
@ V
= 10V, T = 25°C
Continuous Drain Current
22*
22*
D
D
GS
GS
C
A
I
= 10V, T = 100°C Continuous Drain Current
C
I
Pulsed Drain Current À
Max. Power Dissipation
88
DM
@ T = 25°C
P
D
75
W
W/°C
V
C
Linear Derating Factor
0.60
±16
V
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
GS
E
190
mJ
A
AS
I
22
AR
E
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
7.5
mJ
V/ns
AR
dv/dt
1.0
T
-55 to 150
J
oC
g
T
Storage Temperature Range
STG
Package Mounting Surface Temperature
Weight
300 (for 5 s)
1.0
* Current is limited by package
For footnotes refer to the last page
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1
08/23/04
IRL5NJ7413
Electrical Characteristics@ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min Typ Max Units
Test Conditions
BV
Drain-to-Source Breakdown Voltage
30
—
—
V
V
= 0V, I = 250µA
D
DSS
GS
V/°C Reference to 25°C, I = 1.0mA
∆BV
/∆T Temperature Coefficient of Breakdown
—
0.027
—
DSS
J
D
Voltage
R
V
Static Drain-to-Source On-State
Resistance
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
—
—
1.0
30
—
—
—
—
—
—
—
0.014
0.020
3.0
—
25
Ω
V
V
= 10V, I = 22A
D
Ã
DS(on)
GS
GS
= 4.5V, I = 22A
D
V
S ( )
V
V
= V , I = 250µA
GS(th)
fs
DS
DS
V
GS
D
Ω
g
= 10V, I
= 22A Ã
DS
I
= 24V ,V =0V
DSS
DS GS
µA
—
250
V
= 24V,
DS
= 0V, T =125°C
V
GS
J
I
I
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
4.0
100
-100
70
20
23
20
80
80
80
V
V
= 16V
= -16V
GSS
GSS
GS
GS
nA
nC
Q
Q
Q
V
=10V, I = 22A
g
gs
gd
d(on)
r
GS D
V
= 24V
DS
t
t
t
t
V
V
= 15V, I = 22A,
=10V, R = 6.2Ω
DD
GS
D
G
ns
d(off)
f
L
+ L
—
S
D
Measured from the center of
nH
drain pad to center of source pad
C
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
1640
660
80
—
—
—
V
= 0V, V
= 25V
f = 1.0MHz
iss
GS DS
C
C
pF
oss
rss
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
I
I
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) À
—
—
—
—
22*
88
S
SM
A
V
t
Q
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
—
—
—
—
—
—
1.0
120
300
V
nS
nC
T = 25°C, I = 22A, V
= 0V Ã
j
SD
rr
RR
S
GS
T = 25°C, I = 22A, di/dt ≤ 100A/µs
j
F
V
DD
≤ 25V Ã
t
on
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L .
S D
* Current is limited by package
Thermal Resistance
Parameter
Min Typ Max Units
Test Conditions
R
Junction-to-Case
—
—
1.67
°C/W
thJC
Note: Corresponding Spice and Saber models are available on International Rectifier Website.
For footnotes refer to the last page
2
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IRL5NJ7413
100
10
1
100
10
1
VGS
15V
10V
VGS
15V
10V
7.0V
4.5V
3.5V
3.3V
3.0V
TOP
TOP
7.0V
4.5V
3.5V
3.3V
3.0V
BOTTOM 2.7V
BOTTOM 2.7V
2.7V
2.7V
20µs PULSE WIDTH
Tj = 25°C
20µs PULSE WIDTH
Tj = 150°C
0.1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
100
10
1
2.0
22A
=
I
D
T
= 150°C
J
1.5
1.0
0.5
0.0
T
= 25°C
J
V
DS
= 15V
20µs PULSE WIDTH
V
=10V
GS
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
2.5
3.0
3.5
4.0
4.5
5.0
T , Junction Temperature ( C)
J
V
, Gate-to-Source Voltage (V)
GS
Fig 4. Normalized On-Resistance
Fig 3. Typical Transfer Characteristics
Vs.Temperature
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3
IRL5NJ7413
3000
2500
2000
1500
1000
500
20
16
12
8
V
= 0V,
f = 1MHz
C SHORTED
ds
I
D
= 22A
GS
C
= C + C
iss
gs
gd ,
V
V
V
= 24V
= 15V
= 6V
DS
DS
DS
C
= C
rss
gd
C
= C + C
oss
ds
gd
C
C
iss
oss
4
C
FOR TEST CIRCUIT
SEE FIGURE 13
rss
0
0
1
0
20
40
60
80
10
100
Q
, Total Gate Charge (nC)
V
, Drain-to-Source Voltage (V)
G
DS
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-SourceVoltage
Drain-to-SourceVoltage
100
10
1
1000
°
T = 150 C
J
OPERATION IN THIS AREA
LIMITED BY R (on)
DS
100
10
1
°
T = 25 C
J
1ms
Tc = 25°C
Tj = 150°C
Single Pulse
10ms
V
= 0 V
GS
0.1
0.4
0.8
1.2
1.6
1
10
, Drain-toSource Voltage (V)
100
V
,Source-to-Drain Voltage (V)
SD
V
DS
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
ForwardVoltage
4
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IRL5NJ7413
RD
60
50
40
30
20
10
0
VDS
LIMITED BY PACKAGE
VGS
D.U.T.
RG
+VDD
-
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
25
50
75
100
125
150
°
T , Case Temperature ( C)
C
10%
V
GS
t
t
r
t
t
f
d(on)
d(off)
Fig 9. Maximum Drain Current Vs.
CaseTemperature
Fig 10b. Switching Time Waveforms
10
1
D = 0.50
0.20
0.10
0.05
P
2
DM
0.1
t
0.02
0.01
1
SINGLE PULSE
(THERMAL RESPONSE)
t
2
Notes:
1. Duty factor D = t / t
1
2. Peak T =P
x Z
+ T
C
J
DM
thJC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRL5NJ7413
400
300
200
100
0
I
D
TOP
10A
14A
15V
BOTTOM 22A
DRIVER
+
L
V
DS
.
D.U.T
R
G
V
DD
-
I
A
AS
V
2
GS
0.01
Ω
t
p
Fig 12a. Unclamped Inductive Test Circuit
25
50
75
100
125
150
°
Starting T , Junction Temperature ( C)
V
J
(BR)DSS
t
p
Fig 12c. Maximum Avalanche Energy
Vs. DrainCurrent
I
AS
Current Regulator
Same Type as D.U.T.
Fig 12b. Unclamped Inductive Waveforms
50KΩ
.2µF
12V
Q
G
.3µF
+
10V
V
DS
D.U.T.
-
Q
Q
GD
GS
V
GS
V
G
3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
6
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IRL5NJ7413
Footnotes:
Repetitive Rating; Pulse width limited by
I
≤ 22A, di/dt ≤ 140 A/µs,
SD
maximum junction temperature.
V
≤ 30V, T ≤ 150°C
DD
Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
J
V
= 25 V, Starting T = 25°C, L=0.8mH
DD
Peak I
J
=22A, V
GS
= 10 V, R = 25Ω
G
AS
Case Outline and Dimensions — SMD-0.5
PAD ASSIGNMENTS
1 = DRAIN
2 = GATE
3 = SOURCE
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 08/04
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7
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