IRLML2502 [INFINEON]
HEXFET Power MOSFET; HEXFET功率MOSFET
| 型号： | IRLML2502 |
| 厂家： | 
Infineon |
| 描述： | HEXFET Power MOSFET |
| 文件： | 总9页 (文件大小：126K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 93757C
IRLML2502
HEXFET® Power MOSFET
l Ultra Low On-Resistance
l N-Channel MOSFET
l SOT-23 Footprint
l Low Profile (<1.1mm)
l Available in Tape and Reel
l Fast Switching
G
S
1
2
VDSS = 20V
3
D
RDS(on) = 0.045Ω
Description
These N-Channel MOSFETs from International Rectifier
utilizeadvancedprocessingtechniquestoachieveextremely
low on-resistance per silicon area. This benefit, combined
with the fast switching speed and ruggedized device design
thatHEXFET powerMOSFETsarewellknownfor,provides
the designer with an extremely efficient and reliable device
for use in battery and load management.
A thermally enhanced large pad leadframe has been
incorporated into the standard SOT-23 package to produce
a HEXFET Power MOSFET with the industry's smallest
footprint. This package, dubbed the Micro3, is ideal for
applications where printed circuit board space is at a
premium. The low profile (<1.1mm) of the Micro3 allows it
to fit easily into extremely thin application environments
suchasportableelectronicsandPCMCIAcards.Thethermal
resistance and power dissipation are the best available.
Micro3
Absolute Maximum Ratings
Parameter
Drain- Source Voltage
Max.
20
Units
V
VDS
ID @ TA = 25°C
ID @ TA= 70°C
IDM
Continuous Drain Current, VGS @ 4.5V
Continuous Drain Current, VGS @ 4.5V
Pulsed Drain Current
4.2
3.4
A
33
PD @TA = 25°C
PD @TA = 70°C
Power Dissipation
1.25
W
Power Dissipation
0.8
Linear Derating Factor
0.01
W/°C
V
VGS
Gate-to-Source Voltage
± 12
TJ, TSTG
Junction and Storage Temperature Range
-55 to + 150
°C
Thermal Resistance
Parameter
Typ.
Max.
Units
RθJA
Maximum Junction-to-Ambient
75
100
°C/W
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1
04/30/03
IRLML2502
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
20 ––– –––
V
VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
––– 0.01 ––– V/°C Reference to 25°C, ID = 1mA
––– 0.035 0.045
––– 0.050 0.080
0.60 ––– 1.2
5.8 ––– –––
––– ––– 1.0
––– ––– 25
––– ––– -100
––– ––– 100
VGS = 4.5V, ID = 4.2A
VGS = 2.5V, ID = 3.6A
VDS = VGS, ID = 250µA
VDS = 10V, ID = 4.0A
RDS(on)
Static Drain-to-Source On-Resistance
Ω
VGS(th)
gfs
Gate Threshold Voltage
V
S
Forward Transconductance
VDS = 16V, VGS = 0V
IDSS
Drain-to-Source Leakage Current
µA
nA
VDS = 16V, VGS = 0V, TJ = 70°C
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
VGS = -12V
IGSS
VGS = 12V
ID = 4.0A
Qg
––– 8.0
12
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
––– 1.8 2.7
––– 1.7 2.6
––– 7.5 –––
––– 10 –––
––– 54 –––
––– 26 –––
––– 740 –––
––– 90 –––
––– 66 –––
nC VDS = 10V
VGS = 5.0V
VDD = 10V
ID = 1.0A
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
RG = 6Ω
RD = 10Ω
Ciss
Coss
Crss
Input Capacitance
VGS = 0V
Output Capacitance
pF
VDS = 15V
Reverse Transfer Capacitance
ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
D
IS
MOSFET symbol
showing the
1.3
33
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
p-n junction diode.
S
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
––– ––– 1.2
V
TJ = 25°C, IS = 1.3A, VGS = 0V
––– 16
––– 8.6
24
13
ns
TJ = 25°C, IF = 1.3A
Qrr
nC di/dt = 100A/µs
Notes:
Repetitive rating; pulse width limited by
Surface mounted on FR-4 board, t ≤ 5sec.
max. junction temperature. ( See fig. 11 )
Pulse width ≤ 300µs; duty cycle ≤ 2%.
2
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IRLML2502
100
10
1
100
10
1
VGS
VGS
TOP
7.00V
5.00V
4.50V
3.50V
3.00V
2.70V
2.50V
TOP
7.00V
5.00V
4.50V
3.50V
3.00V
2.70V
2.50V
BOTTOM 2.25V
BOTTOM 2.25V
2.25V
2.25V
20µs PULSE WIDTH
T = 25 C
J
20µs PULSE WIDTH
T = 150 C
J
°
°
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.0
100
4.0A
=
I
D
1.5
°
T = 25 C
J
1.0
0.5
0.0
°
T = 150 C
J
V
= 15V
DS
20µs PULSE WIDTH
V
=4.5V
GS
10
2.0
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
2.4
2.8
3.2 3.6
4.0
T , Junction Temperature ( C)
J
V
, Gate-to-Source Voltage (V)
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
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3
IRLML2502
10
8
1200
I
D
=
4.0A
V
= 0V,
f = 1MHz
C SHORTED
ds
GS
C
= C + C
iss
gs
gd ,
V
= 10V
DS
C
= C
gd
rss
1000
800
600
400
200
0
C
= C + C
oss
ds
gd
C
iss
6
4
2
C
oss
C
rss
0
0
4
8
12
16
1
10
100
Q
, Total Gate Charge (nC)
V
, Drain-to-Source Voltage (V)
G
DS
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
1000
100
10
1
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
100
10
1
°
T = 150 C
J
10us
100us
1ms
°
T = 25 C
J
10ms
°
T = 25 C
A
°
T = 150 C
Single Pulse
J
V
= 0 V
GS
1.2
0.1
0.1
0.4
0.1
1
10
100
0.6
0.8
1.0
1.4
V , Drain-to-Source Voltage (V)
DS
V
,Source-to-Drain Voltage (V)
SD
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
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IRLML2502
4.0
3.0
2.0
1.0
0.0
25
50
75
100
125
150
°
T , Case Temperature ( C)
C
Fig 9. Maximum Drain Current Vs.
Case Temperature
1000
100
10
D = 0.50
0.20
0.10
0.05
P
2
DM
0.02
0.01
t
1
1
SINGLE PULSE
(THERMAL RESPONSE)
t
2
Notes:
1. Duty factor D =
t / t
1
2. Peak T = P
J
x Z
+ T
A
DM
thJA
0.1
0.00001
0.0001
0.001
0.01
0.1
1
10
t , Rectangular Pulse Duration (sec)
1
Fig 10. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
IRLML2502
0.30
0.20
0.10
0.00
0.05
VGS = 2.5V
0.04
0.03
0.02
Id = 4.0A
VGS = 4.5V
2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0
0
10
20
30
40
V
Gate -to -Source Voltage ( V )
i
, Drain Current ( A )
GS,
D
Fig 11. On-Resistance Vs. Gate Voltage
Fig 12. On-Resistance Vs. Drain Current
6
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IRLML2502
Micro3 Package Outline
Dimensions are shown in millimeters (inches)
INCHES
MIN MAX
.032
MILLIMETERS
D
LEAD ASSIGNMENTS
DIM
A
3
- B -
MIN
0.82
0.02
MAX
1.11
0.10
1 - GATE
2 - SOURCE
3 - DRAIN
.044
.004
.021
.006
.120
A1 .001
B
C
D
e
.015
.004
.105
0.38
0.10
2.67
0.54
0.15
3.05
3
3
H
E
- A -
0.20 ( .008 )
M
A
M
1
2
.0750 BASIC
.0375 BASIC
1.90 BASIC
0.95 BASIC
e1
E
H
L
.047
.083
.055
.098
1.20
2.10
0.13
0°
1.40
e
2.50
0.25
8°
e1
.005 .010
0° 8°
θ
θ
A
MINIMUM RECOMMENDED FOOTPRINT
- C -
B
0.80 ( .031 )
3X
0.008 (.003)
A1
C A S B S
C
L
3X
0.10 (.004)
0.90
( .035 )
3X
3X
3X
M
2.00
( .079 )
NOTES:
1. DIMENSIONING & TOLERANCING PER ANSI Y14.5M-1982.
2. CONTROLLING DIMENSION : INCH.
0.95 ( .037 )
2X
DIMENSIONS DO NOT INCLUDE MOLD FLASH.
3
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7
IRLML2502
Part Marking Information
Micro3
Notes: This part marking information applies to devices producedbefore02/26/2001
WW = (1-26) IF PRECEDED BY LAST DIGIT OF CALENDAR YEAR
EXAMPLE: THIS IS AN IRLML6302
PART NUMBER
WORK
WE EK
YEAR
Y
W
2001
2002
2003
1994
1995
1996
1997
1998
1999
2000
1
2
3
4
5
6
7
8
9
0
01
02
03
04
A
B
C
D
DATE
CODE
24
25
26
X
Y
Z
PART NUMBER CODE REFERENCE:
1A= IRLML2402
1B = IRLML2803
1C= IRLML6302
1D = IRLML5103
1E = IRLML6402
1F = IRLML6401
1G= IRLML2502
1H = IRLML5203
WW = (27-52) IF PRECEDED BY ALETTER
WORK
YEAR
Y
WE EK
W
2001
2002
2003
1994
1995
1996
1997
1998
1999
2000
A
B
C
D
E
27
28
29
30
A
B
C
D
F
G
H
J
DATE CODE EXAMPLES:
YWW = 9503 = 5C
YWW = 9532 = EF
K
50
51
52
X
Y
Z
Notes: This part marking information applies to devices produced after 02/26/2001
W= (1-26) IF PRECEDED BY LAST DIGIT OF CALENDAR YEAR
WORK
WEEK
YEAR
Y
W
Y = YEAR
W= WEEK
2001
2002
2003
1994
1995
1996
1997
1998
1999
2000
1
2
3
4
5
6
7
8
9
0
01
02
03
04
A
B
C
D
PART NUMBER
LOT
CODE
24
25
26
X
Y
Z
PART NUMBER CODE REFERENCE:
A = IRLML2402
B = IRLML2803
C = IRLML6302
D = IRLML5103
E = IRLML6402
F = IRLML6401
G= IRLML2502
H = IRLML5203
W= (27-52) IF PRECEDED BY ALETTER
WORK
YEAR
Y
WEEK
W
2001
2002
2003
1994
1995
1996
1997
1998
1999
2000
A
B
C
D
E
27
28
29
30
A
B
C
D
F
G
H
J
K
50
51
52
X
Y
Z
8
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IRLML2502
Micro3 Tape & Reel Information
Dimensions are shown in millimeters (inches)
2.05 ( .080 )
1.95 ( .077 )
1.6 ( .062 )
1.5 ( .060 )
1.32 ( .051 )
1.12 ( .045 )
1.85 ( .072 )
1.65 ( .065 )
4.1 ( .161 )
3.9 ( .154 )
TR
3.55 ( .139 )
3.45 ( .136 )
8.3 ( .326 )
7.9 ( .312 )
FEED DIRECTION
4.1 ( .161 )
3.9 ( .154 )
0.35 ( .013 )
0.25 ( .010 )
1.1 ( .043 )
0.9 ( .036 )
178.00
( 7.008 )
MAX.
9.90 ( .390 )
8.40 ( .331 )
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 04/03
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