IRLML6302PBF-1_15 [INFINEON]

Compatible with Existing Surface Mount Techniques;


型号：	IRLML6302PBF-1_15
厂家：	Infineon
描述：	Compatible with Existing Surface Mount Techniques
文件：	总8页 (文件大小：241K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

IRLML6302PbF-1

HEXFET^®Power MOSFET

V_DS

R_{DS(on) max}

(@V_GS= -4.5V)

Q_{g (typical)}

I_D

-20

0.60

2.4

-0.78

(@T_A= 25°C)

Micro3^TM

Features

Benefits

Industry-standard pinout SOT-23 Package

Compatible with Existing Surface Mount Techniques

RoHS Compliant, Halogen-Free

Multi-Vendor Compatibility

Easier Manufacturing

Environmentally Friendlier

Increased Reliability

⇒

MSL1, Industrial qualification

Standard Pack

Base Part Number

Package Type

Micro3 (SOT-23)

Orderable Part Number

IRLML6302TRPbF-1

Form

Quantity

IRLML6302TRPbF-1

Tape and Reel

3000

™

Absolute Maximum Ratings

Parameter

Max.

Units

I_D@ T_A= 25°C

I_D@ T_A= 70°C

I_DM

Continuous Drain Current, V_GS@ -4.5V

Pulsed Drain Current

-0.78

-0.62

-4.9

P_D@T_A= 25°C

Power Dissipation

540

mW/°C

Linear Derating Factor

4.3

V_GS

Gate-to-Source Voltage

± 12

dv/dt

T_J,T_STG

Peak Diode Recovery dv/dt

Junction and Storage Temperature Range

-5.0

V/ns

°C

-55 to + 150

Thermal Resistance

Parameter

Maximum Junction-to-Ambient

Typ.

Max.

230

Units

°C/W

R_θJA

October 28, 2014

IRLML6302PbF-1

Electrical Characteristics @ T_J= 25°C (unless otherwise specified)

Parameter

Min. Typ. Max. Units

Conditions

V_(BR)DSS

Drain-to-Source Breakdown Voltage

-20

V_GS= 0V, I_D= -250µA

ΔV_(BR)DSS/ΔT_JBreakdown Voltage Temp. Coefficient -4.9 mV/°C Reference to 25°C, I_D= -1mA

0.60

0.90

-0.70 -1.5

0.56

-1.0

-25

-100

100

2.4 3.6

0.56 0.84

1.0 1.5

V_GS= -4.5V, I_D= -0.61A

V_GS= -2.7V, I_D= -0.31A

V_DS= V_GS, I_D= -250µA

V_DS= -10V, I_D= -0.31A

V_DS= -16V, V_GS= 0V

V_DS= -16V, V_GS= 0V, T_J= 125°C

V_GS= -12V

R_DS(ON)

Static Drain-to-Source On-Resistance

V_GS(th)

g_fs

Gate Threshold Voltage

Forward Transconductance

I_DSS

I_GSS

Drain-to-Source Leakage Current

µA

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

Total Gate Charge

V_GS= 12V

Q_g

I_D= -0.61A

Q_gs

Q_gd

t_d(on)

t_r

Gate-to-Source Charge

Gate-to-Drain ("Miller") Charge

Turn-On Delay Time

nC V_DS= -16V

V_GS= -4.5V, See Fig. 6 and 9

V_DD= -10V

RiseTime

I_D= -0.61A

t_d(off)

t_f

Turn-Off Delay Time

FallTime

R_G= 6.2Ω

R_D= 16Ω, See Fig. 10

V_GS= 0V

C_iss

C_oss

C_rss

Input Capacitance

Output Capacitance

V_DS= -15V

Reverse Transfer Capacitance

= 1.0MHz, See Fig. 5

Source-Drain Ratings and Characteristics

Parameter

Continuous Source Current

(Body Diode)

Min. Typ. Max. Units

Conditions

MOSFET symbol

showing the

I_S

-0.54

-4.9

I_SM

Pulsed Source Current

(Body Diode)

integral reverse

p-n junction diode.

V_SD

t_rr

Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge

––– ––– -1.2

T_J= 25°C, I_S= -0.61A, V_GS= 0V

––– 35

––– 26

T_J= 25°C, I_F= -0.61A

Q_rr

nC di/dt = -100A/μs

Notes:

Pulse width ≤ 300µs; duty cycle ≤ 2%.

Surface mounted on FR-4 board, t ≤ 5sec.

Repetitive rating; pulse width

limited by max. junction temperature. ( See fig. 11 )

I_SD≤ -0.61A, di/dt ≤ 76A/µs, V_DD≤V_(BR)DSS

T_J≤ 150°C

October 28, 2014

IRLML6302PbF-1

VGS

- 7.5V

- 5.0V

- 4.0V

- 3.5V

- 3.0V

- 2.5V

- 2.0V

VGS

- 7.5V

- 5.0V

- 4.0V

- 3.5V

- 3.0V

- 2.5V

- 2.0V

TOP

BOTTOM - 1.5V

0.1

-1.5V

20μs PULSE WIDTH

= 25°C

-1.5V

= 150°C

0.01

0.1

-V , Drain-to-Source Voltage (V)

Fig 2. Typical Output Characteristics

Fig 1. Typical Output Characteristics

2.0

1.5

1.0

0.5

0.0

= -0.61A

T_J= 25°C

T_J= 150°C

0.1

V_DS= -10V

20μs PULSE WIDTH

= -4.5V

0.01

_4.5A

1.5

2.0

2.5

3.0

3.5

4.0

-60 -40 -20

20 40 60 80 100 120 140 160

T , Junction Temperature (°C)

-V_GS, Gate-to-Source Voltage (V)

Fig 3. Typical Transfer Characteristics

Fig 4. Normalized On-Resistance

Vs. Temperature

October 28, 2014

IRLML6302PbF-1

180

160

140

120

100

= 0V,

f = 1MHz

= -0.61A

iss

rss

oss

= C + C

SHORTED

= -16V

= C

= C + C

iss

oss

rss

FOR TEST CIRCUIT

SEE FIGURE 9

0.0

100

1.0

2.0

3.0

4.0

-V , Drain-to-Source Voltage (V)

, Total Gate Charge (nC)

Fig 6. Typical Gate Charge Vs.

Fig 5. Typical Capacitance Vs.

Gate-to-Source Voltage

Drain-to-Source Voltage

OPERATION IN THIS AREA LIMITED

BY R

DS(on)

100μs

1ms

T = 150°C

T = 25°C

0.1

10ms

= 25°C

= 150°C

= 0V

Single Pulse

0.01

0.1

0.4

0.6

0.8

1.0

1.2

1.4

100

-V , Source-to-Drain Voltage (V)

-V , Drain-to-Source Voltage (V)

Fig 8. Maximum Safe Operating Area

Fig 7. Typical Source-Drain Diode

Forward Voltage

October 28, 2014

IRLML6302PbF-1

R_D

V_DS

V_GS

-4.5V

D.U.T.

R_G

V_DD

-4.5V

Pulse Width ≤ 1 µs

Duty Factor ≤ 0.1 %

Charge

Fig 10a. Switching Time Test Circuit

Fig 9a. Basic Gate Charge Waveform

Current Regulator

Same Type as D.U.T.

50KΩ

90%

.2μF

12V

.3μF

D.U.T.

10%

-3mA

d(on)

d(off)

Current Sampling Resistors

Fig 9b. Gate Charge Test Circuit

Fig 10b. Switching Time Waveforms

1000

D = 0.50

100

0.20

0.10

0.05

0.02

0.01

SINGLE PULSE

(THERMAL RESPONSE)

Notes:

1. Duty factor D =

t / t

2. Peak T = P

x Z

+ T

thJA A

0.1

0.00001

0.0001

0.001

0.01

0.1

100

t , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

October 28, 2014

IRLML6302PbF-1

Peak Diode Recovery dv/dt Test Circuit

Circuit Layout Considerations

• Low Stray Inductance

• Ground Plane

• Low Leakage Inductance

Current Transformer

D.U.T

R_G

• dv/dt controlled by R_G

• I_SDcontrolled by Duty Factor "D"

• D.U.T. - Device Under Test

V_DD

V_GS

* Reverse Polarity for P-Channel

** Use P-Channel Driver for P-Channel Measurements

Driver Gate Drive

P.W.

Period

D =

P.W.

[

=10V

] ***

D.U.T. I Waveform

Reverse

Recovery

Current

Body Diode Forward

Current

di/dt

D.U.T. V Waveform

Diode Recovery

dv/dt

[

]

Re-Applied

Voltage

Body Diode

Forward Drop

Inductor Curent

[

]

Ripple ≤ 5%

*** V_GS= 5.0V for Logic Level and 3V Drive Devices

Fig 13. For P-Channel HEXFETS

October 28, 2014

IRLML6302PbF-1

Micro3 (SOT-23) (Lead-Free) Package Outline

Dimensions are shown in millimeters (inches)

DIMENSIONS

MIL L IME T E RS INCHES

MIN

0.89

0.01

0.88

0.30

0.08

2.80

2.10

1.20

MAX

1.12

0.10

1.02

0.50

0.20

3.04

2.64

1.40

MIN

MAX

.044

.036

.0004

.035

.0039

.040

.0119

.0032

.111

.0196

.0078

.119

ccc

C B A

.083

.048

.103

.055

0.95 BSC

1.90 BSC

0.40 0.60

0.25 BS C

0° 8°

.0375 BSC

.075 BSC

.0158 .0236

.0118 BSC

0° 8°

aaa

0.10

0.20

0.15

.004

.008

.006

bbb

ccc

3X b

bbb

aaa

A B

3 S URF

3X L

RE COMME NDE D FOOT PRINT

NOT ES

1. DIMENSIONING AND TOLERANCINGPER ASME Y14.5M-1994.

2. DIMENSIONS ARE SHOWN IN MILLIMETERS AND INCHES.

3. CONTROLLING DIMENSION: MILLIMETER.

0.972

[.038]

2.742

[.1079]

DATUM PLANE H IS LOCATED AT THE MOLD PARTINGLINE.

DATUM AAND B TO BE DETERMINED AT DATUM PLANE H.

DIME NS IONS D AND E 1 AR E ME AS UR ED AT DAT UM PL ANE H .

DIMENSION L IS THE LEAD LENGTH FOR SOLDERINGTOA SUBSTRATE.

8. OUTLINE CONFORMS TOJEDECOUTLINE TO-236AB.

0.802

[.031]

0.95

[.0375]

1.90

[.075]

Micro3 (SOT-23 / TO-236AB) Part Marking Information

W = (1-26) IF PRECEDED BY LAST DIGIT OF CALENDAR YEAR

DATE CODE

PART NUMBER

WORK

WE EK

LEAD FREE

YEAR

2011

2001

2002

2003

2004

2005

2006

2007

2008

2009

2010

2012

2013

2014

2015

2016

2017

2018

2019

2020

INDUSTRIAL VERSION

Cu WIR E

HALOGEN FREE

LOT CODE

X = PART NUMBER CODE REFERENCE:

A= IRLML2402

B = IRLML2803

C = IRLML6302

D = IRLML5103

E = IRLML6402

F = IRLML6401

G= IRLML2502

H = IRLML5203

S = IRLML6244

T = IRLML6246

U = IRLML6344

V= IRLML6346

W = IRFML8244

X = IRLML2244

Y = IRLML2246

Z = IRFML9244

W = (27-52) IF PRECEDED BY A LETTER

WORK

YEAR

WE EK

IRLML0030

2011

2001

2002

2003

2004

2005

2006

2007

2008

2009

2010

2012

2013

2014

2015

2016

2017

2018

2019

2020

J = IRLML2030

K = IRLML0100

L = IRLML0060

M= IRLML0040

N = IRLML2060

P = IRLML9301

R = IRLML9303

Note: A line above the work week

(as shown here) indicates Lead- Free.

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/

October 28, 2014

IRLML6302PbF-1

Micro3™ Tape & Reel Information (Dimensions are shown in millimeters (inches))

2.05 ( .080 )

1.95 ( .077 )

1.6 ( .062 )

1.5 ( .060 )

1.32 ( .051 )

1.12 ( .045 )

1.85 ( .072 )

1.65 ( .065 )

4.1 ( .161 )

3.9 ( .154 )

3.55 ( .139 )

3.45 ( .136 )

8.3 ( .326 )

7.9 ( .312 )

FEED DIRECTION

4.1 ( .161 )

3.9 ( .154 )

0.35 ( .013 )

0.25 ( .010 )

1.1 ( .043 )

0.9 ( .036 )

178.00

( 7.008 )

MAX.

9.90 ( .390 )

8.40 ( .331 )

NOTES:

1. CONTROLLING DIMENSION : MILLIMETER.

2. OUTLINE CONFORMS TO EIA-481 & EIA-541.

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/

Qualification information^†

Industrial

(per JEDEC JESD47F^††guidelines)

Qualification level

MS L 1

™

Micro3 (SOT-23)

Moisture Sensitivity Level

RoHS compliant

(per JEDEC J-S TD-020D^††

Yes

)

†

Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability

†† Applicable version of JEDEC standard at the time of product release

Revision History

Date

Comment

•

10/28/2014

Updated partmarking to reflect Industrial partmarking on page 7.

IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA

TocontactInternationalRectifier, pleasevisithttp://www.irf.com/whoto-call/

October 28, 2014

IRLML6302PBF-1_15 [INFINEON]

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