IRLMS1902TRPBF [INFINEON]
Power Field-Effect Transistor, 3.2A I(D), 20V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-6;![IRLMS1902TRPBF](http://pdffile.icpdf.com/pdf2/p00236/img/icpdf/IRLMS1902TRP_1383967_icpdf.jpg)
型号: | IRLMS1902TRPBF |
厂家: | ![]() |
描述: | Power Field-Effect Transistor, 3.2A I(D), 20V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-6 开关 脉冲 光电二极管 晶体管 |
文件: | 总8页 (文件大小:194K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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PD - 95359
IRLMS1902PbF
HEXFET® Power MOSFET
l Generation V Technology
l Micro6 Package Style
l Ultra Low RDS(on)
l N-Channel MOSFET
l Lead-Free
A
1
2
6
D
D
D
VDSS = 20V
5
D
3
4
G
S
R
DS(on) = 0.10Ω
Description
Top View
Fifth Generation HEXFET® power MOSFETs from
International Rectifier utilize advanced processing
techniquestoachieveextremelylowon-resistanceper
silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that
HEXFET® power MOSFETs are well known for,
provides the designer with an extremely efficient and
reliable device for use in a wide variety of applications.
The Micro6™ package with its customized leadframe
produces a HEXFET® power MOSFET with RDS(on)
60% less than a similar size SOT-23. This package is
idealforapplicationswhereprintedcircuitboardspace
isatapremium. It'suniquethermaldesignandRDS(on)
reductionenablesacurrent-handlingincreaseofnearly
300% compared to the SOT-23.
Micro6™
Absolute Maximum Ratings
Parameter
Max.
Units
ID @ TA = 25°C
ID @ TA = 70°C
IDM
Continuous Drain Current, VGS @ 4.5V
Continuous Drain Current, VGS @ 4.5V
Pulsed Drain Current
3.2
2.6
A
18
1.7
PD @TA = 25°C
PowerDissipation
W
mW/°C
V
LinearDeratingFactor
13
VGS
Gate-to-SourceVoltage
± 12
dv/dt
PeakDiodeRecoverydv/dt
JunctionandStorageTemperatureRange
5.0
V/ns
°C
TJ, TSTG
-55 to + 150
Thermal Resistance Ratings
Parameter
Min.
Typ.
Max
Units
RθJA
Maximum Junction-to-Ambient
75
°C/W
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1
1/18/05
IRLMS1902PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-SourceBreakdownVoltage
20
V
VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ BreakdownVoltageTemp.Coefficient
0.032 V/°C Reference to 25°C, ID = 1mA
0.10
0.17
0.70
3.2
1.0
25
100
-100
4.7 7.0
0.97 1.5
1.8 2.6
7.0
11
12
4.0
300
120
50
VGS = 4.5V, ID = 2.2A
VGS = 2.7V, ID = 1.1A
VDS = VGS, ID = 250µA
VDS = 10V, ID = 1.1A
VDS = 16V, VGS = 0V
VDS = 16V, VGS = 0V, TJ = 125°C
VGS = 12V
RDS(on)
StaticDrain-to-SourceOn-Resistance
Ω
VGS(th)
gfs
GateThresholdVoltage
V
S
ForwardTransconductance
IDSS
IGSS
Drain-to-SourceLeakageCurrent
µA
nA
Gate-to-SourceForwardLeakage
Gate-to-SourceReverseLeakage
TotalGateCharge
VGS = -12V
Qg
ID = 2.2A
Qgs
Qgd
td(on)
tr
Gate-to-SourceCharge
Gate-to-Drain("Miller")Charge
Turn-OnDelayTime
RiseTime
nC VDS = 16V
VGS = 4.5V, See Fig. 6 and 9
VDD = 10V
ID = 2.2A
ns
pF
td(off)
tf
Turn-Off Delay Time
FallTime
RG = 6.0Ω
RD = 4.4Ω, See Fig. 10
VGS = 0V
Ciss
Coss
Crss
InputCapacitance
OutputCapacitance
VDS = 15V
ReverseTransferCapacitance
= 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
ContinuousSourceCurrent
(BodyDiode)
Min. Typ. Max. Units
Conditions
MOSFETsymbol
showing the
D
S
IS
1.7
18
A
G
ISM
PulsedSourceCurrent
(BodyDiode)
integralreverse
p-njunctiondiode.
VSD
trr
DiodeForwardVoltage
ReverseRecoveryTime
ReverseRecoveryCharge
1.2
V
TJ = 25°C, IS = 2.2A, VGS = 0V
TJ = 25°C, IF = 2.2A
40
37
60
55
ns
nC
Qrr
di/dt = 100A/µs
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Pulse width ≤ 300µs; duty cycle ≤ 2%.
ISD ≤ 2.2A, di/dt ≤ 110A/µs, VDD ≤ V(BR)DSS
TJ ≤ 150°C
,
Surface mounted on FR-4 board, t ≤ 5sec.
2
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IRLMS1902PbF
100
10
1
100
10
1
VGS
VGS
TOP
7.50V
5.00V
4.00V
3.50V
3.00V
2.50V
2.00V
TOP
7.50V
5.00V
4.00V
3.50V
3.00V
2.50V
2.00V
BOTTOM1.75V
BOTTOM1.75V
1.75V
20µs PULSE WIDTH
20µs PULSE WIDTH
J
1.75V
°
T = 25 C
J
°
T = 150 C
0.1
0.1
0.1
0.1
1
10
1
10
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
100
2.0
2.2A
=
I
D
°
T = 25 C
1.5
1.0
0.5
0.0
J
°
10
T = 150 C
J
1
V
= 10V
DS
20µs PULSE WIDTH
V
=4.5V
GS
0.1
1.5
2.0
2.5
3.0
3.5 4.0 4.5
5.0
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
V
, Gate-to-Source Voltage (V)
T , Junction Temperature( C)
J
GS
Fig 4. Normalized On-Resistance
Fig 3. Typical Transfer Characteristics
Vs. Temperature
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3
IRLMS1902PbF
10
8
600
I
D
= 2.2A
V
= 0V,
f = 1MHz
gd , ds
GS
C
= C + C
C
SHORTED
iss
gs
V
= 16V
DS
C
= C
gd
rss
500
400
300
200
100
0
C
= C + C
ds
oss
gd
6
C
iss
4
C
oss
2
C
rss
FOR TEST CIRCUIT
SEE FIGURE 9
0
1
10
100
0
2
4
6
8
V
, Drain-to-Source Voltage (V)
Q , Total Gate Charge (nC)
DS
G
Fig 5. Typical Capacitance Vs.
Fig 6. Typical Gate Charge Vs.
Drain-to-Source Voltage
Gate-to-Source Voltage
100
100
10
1
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
10
100us
1ms
°
T = 150 C
J
°
T = 25 C
J
1
10ms
°
T = 25 C
C
°
T = 150 C
Single Pulse
J
V
= 0 V
GS
1.2
0.1
0.4
0.1
0.6
0.8
1.0
1.4
1
10
100
V
,Source-to-Drain Voltage (V)
V
, Drain-to-Source Voltage (V)
SD
DS
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
Forward Voltage
4
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IRLMS1902PbF
RD
VDS
Q
G
VGS
4.5V
D.U.T.
Q
Q
GD
GS
RG
+ VDD
-
V
G
4.5V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Charge
Fig 9a. Basic Gate Charge Waveform
Fig 10a. Switching Time Test Circuit
Current Regulator
Same Type as D.U.T.
V
DS
50KΩ
90%
.2µF
12V
.3µF
+
V
DS
D.U.T.
-
10%
V
GS
V
GS
t
t
r
t
t
f
3mA
d(on)
d(off)
I
I
D
G
Current Sampling Resistors
Fig 9b. Gate Charge Test Circuit
Fig 10b. Switching Time Waveforms
100
10
1
D = 0.50
0.20
0.10
0.05
0.02
0.01
P
2
DM
t
1
SINGLE PULSE
(THERMAL RESPONSE)
t
2
Notes:
1. Duty factor D = t / t
1
2. Peak T =P
J
x Z
+ T
thJA A
DM
0.1
0.00001
0.0001
0.001
0.01
0.1
1
10
100
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
IRLMS1902PbF
Peak Diode Recovery dv/dt Test Circuit
+
-
CircuitLayoutConsiderations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
D.U.T
+
-
-
+
RG
• dv/dt controlled by RG
+
-
• Driver same type as D.U.T.
VDD
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
Driver Gate Drive
P.W.
P.W.
Period
Period
D =
V
=10V
*
GS
D.U.T. I Waveform
SD
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
Re-Applied
Voltage
Body Diode
Forward Drop
Inductor Curent
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 12. For N-channel HEXFET® power MOSFETs
6
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IRLMS1902PbF
Micro6 (SOT23 6L) Package Outline
Dimensions are shown in milimeters (inches)
LEAD ASSIGNMENTS
RECOMMENDED FOOTPRINT
3.00 (.118 )
-B-
2.80 (.111 )
2X 0.95 (.0375 )
D
D
S
1.75 (.068 )
1.50 (.060 )
6
1
5
2
4
3
6X (1.06 (.042 )
3.00 (.118 )
2.60 (.103 )
6
1
5
4
-A-
2.20 (.087 )
2
3
D
G
D
0.95 ( .0375 )
2X
0.50 (.019 )
6X
6X 0.65 (.025 )
0.35 (.014 )
0.15 (.006 ) M C A S B S
0O -10O
0.20 (.007 )
6X
1.30 (.051 )
0.90 (.036 )
0.09 (.004 )
1.45 (.057 )
0.90 (.036 )
-C-
0.10 (.004 )
SURFACES
0.15 (.006 )
MAX.
0.60 (.023 )
0.10 (.004 )
6
NOTES :
1. DIMENSIONING & TOLERANCING PER ANSI Y14.5M-1982.
2. CONTROLLING DIMENSION : MILLIMETER.
3. DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES).
Micro6 (SOT23 6L) Part Marking Information
W = (1-26) IF PRECEDED BY LAST DIGIT OF CALENDAR YEAR
WORK
WE EK
YEAR
Y
W
Y = YEAR
W = WE E K
2001
2002
2003
2004
2005
2006
2007
2008
2009
2010
1
2
3
4
5
6
7
8
9
0
01
02
03
04
A
B
C
D
PART NUMBER
LOT
CODE
TOP
24
25
26
X
Y
Z
PART NUMBER CODE REFERENCE:
A = IRLMS1902
B = IRLMS1503
C = IRLMS6702
D = IRLMS5703
E = IRLMS6802
F = IRLMS4502
G = IRLMS2002
H = IRLMS6803
W = (27-52) IF PRECEDED BY ALETTER
WORK
YEAR
Y
WE EK
W
2001
2002
2003
2004
2005
2006
2007
2008
2009
2010
A
B
C
D
E
27
28
29
30
A
B
C
D
F
G
H
J
Note: A line above the work week
(as shown here) indicates Lead-Free.
K
50
51
52
X
Y
Z
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7
IRLMS1902PbF
Micro6 Tape & Reel Information
Dimensions are shown in milimeters (inches)
8mm
FEED DIRECTION
4mm
NOTES :
1. OUTLINE CONFORMS TO EIA-481 & EIA-541.
178.00
( 7.008 )
MAX.
9.90 ( .390 )
8.40 ( .331 )
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
This product has been designed and qualified for the consumer market.
Qualification Standards can be found on IR’s Web site.
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 01/05
8
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