ISC037N03L5IS [INFINEON]
凭借 OptiMOS™ 和 StrongIRFET™ 功率 MOSFET 系列产品组合，英飞凌可为所有客户提供合适的选择，满足不同需求。;
| 型号： | ISC037N03L5IS |
| 厂家： | 
Infineon |
| 描述： | 凭借 OptiMOS™ 和 StrongIRFET™ 功率 MOSFET 系列产品组合，英飞凌可为所有客户提供合适的选择，满足不同需求。 |
| 文件： | 总13页 (文件大小：1389K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ISC037N03L5IS
MOSFET
OptiMOSTMꢀPower-MOSFET,ꢀꢀ30ꢀV
SuperSO8
5
8
6
7
7
Features
6
5
8
•ꢀOptimizedꢀSyncFETꢀforꢀhighꢀperformanceꢀbuckꢀconverter
•ꢀIntegratedꢀmonolithicꢀSchottky-likeꢀdiode
•ꢀVeryꢀlowꢀon-resistanceꢀRDS(on)ꢀ@ꢀVGS=4.5ꢀV
•ꢀSuperiorꢀthermalꢀresistance
•ꢀN-channel
•ꢀPb-freeꢀleadꢀꢀplating;ꢀRoHSꢀcompliant
•ꢀHalogen-freeꢀaccordingꢀtoꢀIEC61249-2-21
4
3
1
2
2
3
1
4
Productꢀvalidation
QualifiedꢀaccordingꢀtoꢀJEDECꢀStandard
S 1
8 D
7 D
S 2
S 3
G 4
Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters
6 D
5 D
Parameter
Value
Unit
VDS
30
V
RDS(on),max
ID
3.7
78
mΩ
A
QOSS
12
nC
nC
QG(0V..10V)
17
Typeꢀ/ꢀOrderingꢀCode
Package
Marking
RelatedꢀLinks
ISC037N03L5IS
PG-TDSON-8
037N03LI
-
Final Data Sheet
1
Rev.ꢀ2.0,ꢀꢀ2020-02-25
OptiMOSTMꢀPower-MOSFET,ꢀꢀ30ꢀV
ISC037N03L5IS
TableꢀofꢀContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Final Data Sheet
2
Rev.ꢀ2.0,ꢀꢀ2020-02-25
OptiMOSTMꢀPower-MOSFET,ꢀꢀ30ꢀV
ISC037N03L5IS
1ꢀꢀꢀꢀꢀMaximumꢀratings
atꢀTj=25ꢀ°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ2ꢀꢀꢀꢀꢀMaximumꢀratings
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
-
-
-
-
-
-
-
-
-
-
78
49
66
41
20
VGS=10ꢀV,ꢀTC=25ꢀ°C
VGS=10ꢀV,ꢀTC=100ꢀ°C
VGS=4.5ꢀV,ꢀTC=25ꢀ°C
Continuous drain current
ID
A
VGS=4.5ꢀV,ꢀTC=100ꢀ°C
VGS=10ꢀV,ꢀTA=25ꢀ°C,ꢀRthJA=50ꢀK/W1)
Pulsed drain current2)
ID,pulse
IAS
-
-
-
-
-
312
30
A
TC=25ꢀ°C
Avalanche current, single pulse3)
Avalanche energy, single pulse
Gate source voltage
-
A
TC=25ꢀ°C
EAS
VGS
-
14
mJ
V
ID=30ꢀA,ꢀRGS=25ꢀΩ
-20
20
-
-
-
-
-
37
2.5
TC=25ꢀ°C
Power dissipation
Ptot
W
TA=25ꢀ°C,ꢀRthJA=50ꢀK/W1)
IEC climatic category;
DIN IEC 68-1: 55/150/56
Operating and storage temperature
Tj,ꢀTstg
-55
-
150
°C
2ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Tableꢀ3ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Thermal resistance, junction - case,
bottom
RthJC
RthJC
RthJA
-
-
-
-
3.4
K/W
K/W
K/W
-
-
-
Thermal resistance, junction - case,
top
-
-
20
50
Device on PCB,
6 cm2 cooling area1)
1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
2) See figure 3 for more detailed information
3) See figure 13 for more detailed information
Final Data Sheet
3
Rev.ꢀ2.0,ꢀꢀ2020-02-25
OptiMOSTMꢀPower-MOSFET,ꢀꢀ30ꢀV
ISC037N03L5IS
3ꢀꢀꢀꢀꢀElectricalꢀcharacteristics
atꢀTj=25ꢀ°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ4ꢀꢀꢀꢀꢀStaticꢀcharacteristics
Values
Typ.
-
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
VGS=0ꢀV,ꢀID=10ꢀmA
mV/K ID=10ꢀmA,ꢀreferencedꢀtoꢀ25ꢀ°C
Min.
Max.
Drain-source breakdown voltage
V(BR)DSS
30
-
V
Breakdown voltage temperature
coefficient
dV(BR)DSSꢀ/dTj -
VGS(th) 1.2
IDSS
15
-
-
Gate threshold voltage
2
V
VDS=VGS,ꢀID=250ꢀµA
-
-
-
1
0.5
-
VDS=24ꢀV,ꢀVGS=0ꢀV
VDS=24ꢀV,ꢀVGS=0ꢀV,ꢀTj=125ꢀ°C
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
mA
nA
mΩ
IGSS
-
10
100
VGS=20ꢀV,ꢀVDS=0ꢀV
-
-
4.2
3.1
5.2
3.7
VGS=4.5ꢀV,ꢀID=30ꢀA
VGS=10ꢀV,ꢀID=30ꢀA
RDS(on)
Gate resistance
RG
gfs
-
0.9
86
-
-
Ω
-
Transconductance
43
S
|VDS|>2|ID|RDS(on)max,ꢀID=30ꢀA
Tableꢀ5ꢀꢀꢀꢀꢀDynamicꢀcharacteristics
Values
Typ.
1100
460
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Input capacitance
Ciss
Coss
Crss
-
-
-
-
-
-
pF
pF
pF
VGS=0ꢀV,ꢀVDS=15ꢀV,ꢀf=1ꢀMHz
VGS=0ꢀV,ꢀVDS=15ꢀV,ꢀf=1ꢀMHz
VGS=0ꢀV,ꢀVDS=15ꢀV,ꢀf=1ꢀMHz
Output capacitance
Reverse transfer capacitance
64
VDD=15ꢀV,ꢀVGS=10ꢀV,ꢀID=30ꢀA,
RG=1.6ꢀΩ
Turn-on delay time
Rise time
td(on)
tr
td(off)
tf
-
-
-
-
3.3
4.4
16
-
-
-
-
ns
ns
ns
ns
VDD=15ꢀV,ꢀVGS=10ꢀV,ꢀID=30ꢀA,
RG=1.6ꢀΩ
VDD=15ꢀV,ꢀVGS=10ꢀV,ꢀID=30ꢀA,
RG=1.6ꢀΩ
Turn-off delay time
Fall time
VDD=15ꢀV,ꢀVGS=10ꢀV,ꢀID=30ꢀA,
RG=1.6ꢀΩ
3.0
Tableꢀ6ꢀꢀꢀꢀꢀGateꢀchargeꢀcharacteristics1)ꢀ
Values
Typ.
2.9
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Gate to source charge
Gate charge at threshold
Gate to drain charge
Switching charge
Qgs
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
nC
nC
nC
nC
nC
V
VDD=15ꢀV,ꢀID=30ꢀA,ꢀVGS=0ꢀtoꢀ4.5ꢀV
VDD=15ꢀV,ꢀID=30ꢀA,ꢀVGS=0ꢀtoꢀ4.5ꢀV
VDD=15ꢀV,ꢀID=30ꢀA,ꢀVGS=0ꢀtoꢀ4.5ꢀV
VDD=15ꢀV,ꢀID=30ꢀA,ꢀVGS=0ꢀtoꢀ4.5ꢀV
VDD=15ꢀV,ꢀID=30ꢀA,ꢀVGS=0ꢀtoꢀ4.5ꢀV
VDD=15ꢀV,ꢀID=30ꢀA,ꢀVGS=0ꢀtoꢀ4.5ꢀV
VDD=15ꢀV,ꢀID=30ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV
VDS=0.1ꢀV,ꢀVGS=0ꢀtoꢀ4.5ꢀV
Qg(th)
Qgd
1.7
2.9
Qsw
4.1
Gate charge total
Qg
8.5
Gate plateau voltage
Gate charge total
Vplateau
Qg
2.7
17
nC
nC
nC
Gate charge total, sync. FET
Output charge
Qg(sync)
Qoss
6.8
12
VDD=15ꢀV,ꢀVGS=0ꢀV
1) See ″Gate charge waveforms″ for parameter definition
Final Data Sheet
4
Rev.ꢀ2.0,ꢀꢀ2020-02-25
OptiMOSTMꢀPower-MOSFET,ꢀꢀ30ꢀV
ISC037N03L5IS
Tableꢀ7ꢀꢀꢀꢀꢀReverseꢀdiode
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Typ.
Max.
37
Diode continuous forward current
Diode pulse current
IS
-
-
-
-
-
A
TC=25ꢀ°C
IS,pulse
VSD
Qrr
-
148
0.7
-
A
TC=25ꢀ°C
Diode forward voltage
0.56
2
V
VGS=0ꢀV,ꢀIF=3ꢀA,ꢀTj=25ꢀ°C
VR=15ꢀV,ꢀIF=IS,ꢀdiF/dt=400ꢀA/µs
Reverse recovery charge
nC
Final Data Sheet
5
Rev.ꢀ2.0,ꢀꢀ2020-02-25
OptiMOSTMꢀPower-MOSFET,ꢀꢀ30ꢀV
ISC037N03L5IS
4ꢀꢀꢀꢀꢀElectricalꢀcharacteristicsꢀdiagrams
Diagramꢀ1:ꢀPowerꢀdissipation
Diagramꢀ2:ꢀDrainꢀcurrent
40
80
35
30
25
20
15
10
5
70
60
50
40
30
20
10
0
0
0
40
80
120
160
0
40
80
120
160
TCꢀ[°C]
TCꢀ[°C]
Ptot=f(TC)
ID=f(TC);ꢀVGS≥10ꢀV
Diagramꢀ3:ꢀSafeꢀoperatingꢀarea
Diagramꢀ4:ꢀMax.ꢀtransientꢀthermalꢀimpedance
103
101
1 µs
10 µs
100 µs
102
101
100
10-1
0.5
100
0.2
0.1
1 ms
10 ms
DC
0.05
0.02
10-1
0.01
single pulse
10-2
10-1
100
101
102
10-6
10-5
10-4
10-3
10-2
10-1
100
VDSꢀ[V]
tpꢀ[s]
ID=f(VDS);ꢀTC=25ꢀ°C;ꢀD=0;ꢀparameter:ꢀtp
ZthJC=f(tp);ꢀparameter:ꢀD=tp/T
Final Data Sheet
6
Rev.ꢀ2.0,ꢀꢀ2020-02-25
OptiMOSTMꢀPower-MOSFET,ꢀꢀ30ꢀV
ISC037N03L5IS
Diagramꢀ5:ꢀTyp.ꢀoutputꢀcharacteristics
Diagramꢀ6:ꢀTyp.ꢀdrain-sourceꢀonꢀresistance
300
7
4.5 V
5 V
3.2 V
6
5
4
3
2
1
0
250
10 V
3.5 V
4 V
4 V
200
4.5 V
5 V
150
7 V
8 V
10 V
3.5 V
100
3.2 V
50
0
3 V
2.8 V
0
1
2
3
0
10
20
30
40
50
VDSꢀ[V]
IDꢀ[A]
ID=f(VDS);ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS
RDS(on)=f(ID);ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS
Diagramꢀ7:ꢀTyp.ꢀtransferꢀcharacteristics
Diagramꢀ8:ꢀTyp.ꢀforwardꢀtransconductance
300
140
120
100
80
60
40
20
0
250
200
150
100
50
150 °C
25 °C
0
0
1
2
3
4
5
0
10
20
30
40
50
60
70
80
VGSꢀ[V]
IDꢀ[A]
ID=f(VGS);ꢀ|VDS|>2|ID|RDS(on)max;ꢀparameter:ꢀTj
gfs=f(ID);ꢀTj=25ꢀ°C
Final Data Sheet
7
Rev.ꢀ2.0,ꢀꢀ2020-02-25
OptiMOSTMꢀPower-MOSFET,ꢀꢀ30ꢀV
ISC037N03L5IS
Diagramꢀ9:ꢀDrain-sourceꢀon-stateꢀresistance
Diagramꢀ10:ꢀTyp.ꢀgateꢀthresholdꢀvoltage
7
2.5
6
5
4
2.0
1.5
1.0
0.5
0.0
typ
3
2
1
0
-60
-20
20
60
100
140
180
-60
-20
20
60
100
140
180
Tjꢀ[°C]
Tjꢀ[°C]
RDS(on)=f(Tj);ꢀID=30ꢀA;ꢀVGS=10ꢀV
VGS(th)=f(Tj);ꢀVGS=VDS;ꢀID=10ꢀmA
Diagramꢀ11:ꢀTyp.ꢀcapacitances
Diagramꢀ12:ꢀForwardꢀcharacteristicsꢀofꢀreverseꢀdiode
104
103
-55 °C
25 °C
125 °C
150 °C
102
101
100
10-1
Ciss
103
102
101
Coss
Crss
0
10
20
30
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VDSꢀ[V]
VSDꢀ[V]
C=f(VDS);ꢀVGS=0ꢀV;ꢀf=1ꢀMHz
IF=f(VSD);ꢀparameter:ꢀTj
Final Data Sheet
8
Rev.ꢀ2.0,ꢀꢀ2020-02-25
OptiMOSTMꢀPower-MOSFET,ꢀꢀ30ꢀV
ISC037N03L5IS
Diagramꢀ13:ꢀAvalancheꢀcharacteristics
Diagramꢀ14:ꢀTyp.ꢀgateꢀcharge
102
12
15 V
24 V
10
8
6 V
25 °C
101
100 °C
125 °C
6
100
4
2
10-1
0
100
101
102
103
0
5
10
15
20
tAVꢀ[µs]
Qgateꢀ[nC]
IAS=f(tAV);ꢀRGS=25ꢀΩ;ꢀparameter:ꢀTj(start)
VGS=f(Qgate);ꢀID=30ꢀAꢀpulsed;ꢀparameter:ꢀVDD
Diagramꢀ15:ꢀTyp.ꢀdrain-sourceꢀleakageꢀcurrent
Diagram Gate charge waveforms
10-2
10-3
125 °C
10-4
100 °C
75 °C
10-5
10-6
25 °C
10-7
0
5
10
15
20
25
VDSꢀ[V]
IDSS=f(VDS);ꢀVGS=0ꢀV;ꢀparameter:ꢀTj
Final Data Sheet
9
Rev.ꢀ2.0,ꢀꢀ2020-02-25
OptiMOSTMꢀPower-MOSFET,ꢀꢀ30ꢀV
ISC037N03L5IS
5ꢀꢀꢀꢀꢀPackageꢀOutlines
DOCUMENT NO.
Z8B00003332
REVISION
07
MILLIMETERS
DIMENSION
MIN.
0.90
0.15
0.34
4.80
3.90
0.03
5.70
5.90
3.88
MAX.
1.20
0.35
0.54
5.35
4.40
0.23
6.10
6.42
4.31
SCALE 10:1
A
A1
b
3mm
0
1
2
D
D1
D2
E
EUROPEAN PROJECTION
E1
E2
e
1.27
L
0.45
0.45
0.71
0.69
ISSUE DATE
06.06.2019
M
Figureꢀ1ꢀꢀꢀꢀꢀOutlineꢀPG-TDSON-8,ꢀdimensionsꢀinꢀmm
Final Data Sheet
10
Rev.ꢀ2.0,ꢀꢀ2020-02-25
OptiMOSTMꢀPower-MOSFET,ꢀꢀ30ꢀV
ISC037N03L5IS
PG-TDSON-8: Recommended Boardpads & Apertures
1.905
1.905
1.27
3x
0.6
1.27
3x
0.5
1.6
0.2
1.5
0.5
1.27
3x
1.27
3x
0.4
1.905
1.905
copper
solder mask
stencil apertures
all dimensions in mm
Figure 2 Outline Boardpads (TDSON-8), dimensions in mm
Final Data Sheet
11
Rev.ꢀ2.0,ꢀꢀ2020-02-25
OptiMOSTM Power-MOSFET , 30 V
ISC037N03L5IS
Dimension in mm
Figure 3 Outline Tape (TDSON-8)
Final Data Sheet
12
Rev. 2.0, 2020-02-25
OptiMOSTM Power-MOSFET , 30 V
ISC037N03L5IS
Revision History
ISC037N03L5IS
Revision: 2020-02-25, Rev. 2.0
Previous Revision
Revision Date
Subjects (major changes since last revision)
Release of final version
2.0
2020-02-25
Trademarks
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Published by
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81726 München, Germany
© 2020 Infineon Technologies AG
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(“Beschaffenheitsgarantie”) .
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please contact the nearest Infineon Technologies Office.
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Final Data Sheet
13
Rev. 2.0, 2020-02-25
相关型号：
ISC037N12NM6
This is a normal level 120 V MOSFET in SuperSO8 packaging with 3.7 mOhm on-resistance. ISC037N12NM6 is part of Infineon’s OptiMOS™ 6 power MOSFET family.
INFINEON
ISC0602NLS
OptiMOS™ PD 功率 MOSFET 是英飞凌针对 USB-PD 和适配器应用推出的产品组合。ISC0602NLS 采用 SuperSO8 封装，产品上量迅速，交付周期短。供电用 OptiMOS™ 低压 MOSFET 可精简设计元件用量，进而降低物料成本。OptiMOS™ PD 采用紧凑型轻量封装，打造优质产品。
INFINEON
ISC060N10NM6
正常电平 ISC060N10NM6 OptiMOS™ 6 系列 100 V 器件在分立式功率 MOSFET 领域树立了全新技术标准。相较于替代产品，英飞凌的领先薄晶圆技术显示出卓越性能优势。
INFINEON
ISC0703NLS
OptiMOS™ PD 功率 MOSFET 是英飞凌针对 USB-PD 和适配器应用推出的产品组合。产品上量迅速，交付周期短。供电用 OptiMOS™ 低压 MOSFET 可精简设计元件用量，进而降低物料成本。OptiMOS™ PD 采用紧凑型轻量封装，打造优质产品。
INFINEON
ISC073N12LM6
This is a logic level 120 V MOSFET in SuperSO8 packaging with 7.3 mOhm on-resistance. ISC073N12LM6 is part of Infineon’s OptiMOS™ 6 power MOSFET family.
INFINEON
ISC080N10NM6
正常电平 ISC080N10NM6 OptiMOS™ 6 系列 100 V 器件在分立式功率 MOSFET 领域树立了全新技术标准。相较于替代产品，英飞凌的领先薄晶圆技术显示出卓越性能优势。
INFINEON
ISC1008ER1R0M
General Fixed Inductor, 1 ELEMENT, 1 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD, CHIP, 1414, ROHS COMPLIANT
VISHAY
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