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Q62702-F1063 [INFINEON]

PNP Silicon RF Transistor (For low distortion broadband amplifiers up to 1 GHz at collector currents from 2mA up to 20mA); PNP硅RF晶体管（对于低失真宽带放大器高达1 GHz的从2毫安集电极电流高达20mA ）
Q62702-F1063
型号： Q62702-F1063
厂家： Infineon    Infineon
描述：

PNP Silicon RF Transistor (For low distortion broadband amplifiers up to 1 GHz at collector currents from 2mA up to 20mA)
PNP硅RF晶体管（对于低失真宽带放大器高达1 GHz的从2毫安集电极电流高达20mA ）

晶体 放大器 晶体管
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BFT 93  
PNP Silicon RF Transistor  
• For low distortion broadband amplifiers up to  
1 GHz at collector currents from 2mA up  
to 20mA  
ESD: Electrostatic discharge sensitive device, observe handling precaution!  
Type  
Marking Ordering Code  
Pin Configuration  
Package  
BFT 93  
X1s  
Q62702-F1063  
1 = B  
2 = E  
3 = C  
SOT-23  
Maximum Ratings  
Parameter  
Symbol  
Values  
Unit  
Collector-emitter voltage  
Collector-base voltage  
Emitter-base voltage  
Collector current  
V
V
V
12  
15  
2
V
CEO  
CBO  
EBO  
I
I
35  
3
mA  
mW  
°C  
C
Base current  
B
Total power dissipation  
P
tot  
T ≤ 58 °C  
S
300  
Junction temperature  
Ambient temperature  
Storage temperature  
T
T
T
150  
j
- 65 ... + 150  
- 65 ... + 150  
A
stg  
Thermal Resistance  
1)  
Junction - soldering point  
R
thJS  
≤ 305  
K/W  
1) T is measured on the collector lead at the soldering point to the pcb.  
S
Semiconductor Group  
1
Dec-12-1996  
BFT 93  
Electrical Characteristics at T = 25°C, unless otherwise specified.  
A
Parameter  
Symbol  
Values  
Unit  
min.  
typ.  
max.  
DC Characteristics  
Collector-emitter breakdown voltage  
V
V
(BR)CEO  
I = 1 mA, I = 0  
12  
-
-
-
C
B
Collector-base cutoff current  
= 5 V, I = 0  
I
I
nA  
µA  
-
CBO  
V
CB  
-
50  
10  
-
E
Emitter-base cutoff current  
= 2 V, I = 0  
EBO  
V
EB  
-
-
C
DC current gain  
I = 30 mA, V = 8 V  
h
FE  
20  
60  
C
CE  
Semiconductor Group  
2
Dec-12-1996  
BFT 93  
Electrical Characteristics at T = 25°C, unless otherwise specified.  
A
Parameter  
Symbol  
Values  
Unit  
min.  
typ.  
max.  
AC Characteristics  
Transition frequency  
f
GHz  
pF  
T
I = 30 mA, V = 8 V, f = 500 MHz  
4
-
5.5  
-
C
CE  
Collector-base capacitance  
= 10 V, f = 1 MHz  
C
C
C
F
cb  
ce  
eb  
V
CB  
0.8  
1.3  
Collector-emitter capacitance  
= 10 V, f = 1 MHz  
V
CE  
-
0.28  
1.6  
-
-
Emitter-base capacitance  
= 0.5 V, f = 1 MHz  
V
EB  
-
Noise figure  
dB  
I = 2 mA, V = 8 V, Z = Z  
C
CE  
S
Sopt  
f = 900 MHz  
-
-
2.7  
4.6  
-
-
f = 1.8 GHz  
Power gain  
2)  
G
ma  
I = 30 mA, V = 8 V, Z = Z  
Sopt  
C
CE  
S
Z = Z  
L
Lopt  
f = 900 MHz  
f = 1.8 GHz  
-
-
11.5  
6.5  
-
-
2
Transducer gain  
|S  
|
21e  
Ω
I = 30 mA, V = 8 V, Z =Z = 50  
C
CE  
S
L
f = 900 MHz  
-
-
10  
5
-
-
f = 1.8 GHz  
2
1/2  
2) G = |S /S | (k-(k -1) )  
ma  
21 12  
Semiconductor Group  
3
Dec-12-1996  
BFT 93  
SPICE Parameters (Gummel-Poon Model, Berkeley-SPICE 2G.6 Syntax) :  
Transistor Chip Data  
IS =  
1.0366  
8.4866  
1.3702  
9.5149  
1.038  
fA  
V
BF =  
80  
-
NF =  
1.0313  
16.295  
1.2907  
-
VAF =  
NE =  
IKF =  
BR =  
IKR =  
RB =  
0.47497  
16.116  
A
-
ISE =  
NR =  
ISC =  
IRB =  
RC =  
fA  
-
-
VAR =  
NC =  
RBM =  
CJE =  
TF =  
V
0.012081 A  
0.094971 fA  
Ω
Ω
V
-
-
3.2133  
1.9597  
0.84456  
0.27447  
0
0.46855  
1.1393  
mA  
Ω
fF  
ps  
mA  
V
Ω
-
2.0822  
20.636  
54.303  
3.0573  
1.0282  
RE =  
VJE =  
XTF =  
PTF =  
MJC =  
CJS =  
XTB =  
FC =  
MJE =  
VTF =  
CJC =  
XCJC =  
VJS =  
EG =  
TNOM  
0.68352  
0.19311  
2690.4  
V
fF  
ITF =  
VJC =  
TR =  
deg  
-
0.5401  
0
0.075977 -  
0.34233 ns  
fF  
-
0.75  
1.11  
300  
V
MJS =  
XTI =  
0
3
-
-
0
eV  
K
0.54298  
-
All parameters are ready to use, no scalling is necessary.  
Extracted on behalf of SIEMENS Small Signal Semiconductors by:  
Institut für Mobil-und Satellitenfunktechnik (IMST)  
© 1996 SIEMENS AG  
Package Equivalent Circuit:  
LBI =  
0.85  
0.51  
0.69  
0.61  
0
nH  
nH  
nH  
nH  
nH  
nH  
fF  
LBO =  
LEI =  
LEO =  
LCI =  
LCO =  
CBE =  
CCB =  
CCE =  
0.49  
73  
84  
fF  
165  
fF  
Valid up to 6 GHz  
For examples and ready to use parameters please contact your local Siemens distributor or sales office to  
obtain a Siemens CD-ROM or see Internet: http://www.siemens.de/Semiconductor/products/35/35.htm  
Semiconductor Group  
4
Dec-12-1996  
BFT 93  
Total power dissipation P = f (T *, T )  
tot  
A
S
* Package mounted on epoxy  
400  
mW  
Ptot  
300  
250  
TS  
200  
150  
100  
TA  
50  
0
0
20  
40  
60  
80  
100 120 °C 150  
TA,TS  
Permissible Pulse Load R  
= f (t )  
Permissible Pulse Load P  
/P  
= f (t )  
thJS  
p
totmax totDC p  
10 2  
10 3  
K/W  
RthJS  
Ptotmax/PtotDC  
-
D = 0  
10 2  
0.005  
0.01  
0.02  
0.05  
0.1  
0.2  
0.5  
10 1  
0.5  
0.2  
0.1  
10 1  
0.05  
0.02  
0.01  
0.005  
D = 0  
10 0  
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1s 10 0  
tp  
10 0  
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1s 10 0  
tp  
Semiconductor Group  
5
Dec-12-1996  
BFT 93  
Collector-base capacitance C = f (V )  
Transition frequency f = f (I )  
cb  
CB  
T
C
V
BE  
= v = 0, f = 1MHz  
be  
V
= Parameter  
CE  
2.0  
pF  
6.0  
GHz  
5.0  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
10V  
8V  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
Ccb  
fT  
5V  
3V  
2V  
1V  
0.7V  
0.2  
0.0  
0.5  
0.0  
0
4
8
12  
16  
V
24  
0
10  
20  
30  
40  
mA  
60  
VR  
IC  
Power Gain G , G = f(I )  
Power Gain G , G = f(I )  
ma ms C  
ma  
ms  
C
f = 0.9GHz  
= Parameter  
f = 1.8GHz  
V = Parameter  
CE  
V
CE  
12  
dB  
10  
9
7.0  
dB  
10V  
10V  
8V  
5V  
3V  
6.0  
5.5  
5.0  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
G
G
5V  
3V  
2V  
8
7
2V  
6
5
1V  
4
3
2
0.7V  
1
0
0.5  
0.0  
1V  
0.7V  
40  
0
10  
20  
30  
40  
mA  
IC  
60  
0
10  
20  
30  
mA  
IC  
60  
Semiconductor Group  
6
Dec-12-1996  
BFT 93  
Power Gain G , G = f(V ):_____  
Intermodulation Intercept Point IP =f(I )  
3 C  
ma  
ms  
CE  
2
|S | = f(V ):---------  
(3rd order, Output, Z =Z =50 )  
Ω
S L  
21  
CE  
f = Parameter  
V
= Parameter, f = 900MHz  
CE  
28  
dBm  
24  
12  
8V  
0.9GHz  
0.9GHz  
IC=30mA  
dB  
10  
9
3V  
G
IP3  
2V  
22  
8
7
20  
1.8GHz  
1.8GHz  
6
18  
16  
14  
1V  
5
4
3
2
12  
10  
1
0
0
2
4
6
8
V
12  
0
5
10 15 20 25 30 35 40 mA 50  
IC  
VCE  
2
Power Gain G , G = f(f)  
Power Gain |S | = f(f)  
ma  
ms  
21  
V
= Parameter  
V
= Parameter  
CE  
CE  
30  
28  
IC=30mA  
IC=30mA  
dB  
dB  
22  
18  
14  
10  
6
24  
22  
20  
18  
16  
14  
12  
10  
8
G
S21  
6
4
10V  
2V  
0.7V  
2
2
10V  
1V  
1V  
2V  
0.7V  
2.5  
0
-2  
-2  
0.0  
0.5  
1.0  
1.5  
2.0  
GHz 3.5  
f
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
GHz 3.5  
f
Semiconductor Group  
7
Dec-12-1996  

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