Q67040S4647 [INFINEON]
Thinq SiC Schottky Diode; THINQ SiC肖特基二极管
| 型号： | Q67040S4647 |
| 厂家： | 
Infineon |
| 描述： | Thinq SiC Schottky Diode |
| 文件： | 总8页 (文件大小：207K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SDT08S60
thinQ! SiC Schottky Diode
Product Summary
Silicon Carbide Schottky Diode
• Worlds first 600V Schottky diode
• Revolutionary semiconductor
material - Silicon Carbide
V
V
600
24
8
RRM
Q
nC
A
c
• Switching behavior benchmark
• No reverse recovery
• No temperature influence on
the switching behavior
I
F
P-TO220-2-2.
• No forward recovery
Pin 1
Pin 2
Type
Package
Ordering Code
Marking
SDT08S60
P-TO220-2-2.
Q67040S4647
D08S60
C
A
Maximum Ratings, at T = 25 °C, unless otherwise specified
j
Parameter
Symbol
Value
Unit
I
8
A
Continuous forward current, T =100°C
F
C
I
11.3
26
RMS forward current, f=50Hz
FRMS
Surge non repetitive forward current, sine halfwave I
FSM
T =25°C, t =10ms
C
p
Repetitive peak forward current
I
32
80
FRM
T =150°C, T =100°C, D=0.1
j
C
Non repetitive peak forward current
I
FMAX
t =10µs, T =25°C
p
C
2
2
3.4
600
600
65
i t value, T =25°C, t =10ms
∫i dt
A²s
V
C
p
Repetitive peak reverse voltage
V
RRM
Surge peak reverse voltage
V
RSM
P
W
Power dissipation, T =25°C
tot
C
°C
Operating and storage temperature
T , T
-55... +175
j
stg
Page 1
2004-03-18
Rev. 2.0
SDT08S60
Thermal Characteristics
Parameter
Symbol
Values
Unit
min.
typ. max.
Characteristics
R
-
-
-
-
2.3 K/W
62
Thermal resistance, junction - case
Thermal resistance, junction - ambient, leaded
thJC
R
thJA
Electrical Characteristics, at T = 25 °C, unless otherwise specified
j
Parameter
Symbol
Values
Unit
min.
typ. max.
Static Characteristics
Diode forward voltage
I =8A, T =25°C
V
V
F
-
-
1.5
1.7
1.7
2.1
F
j
I =8A, T =150°C
F
j
Reverse current
I
µA
R
V =600V, T =25°C
-
-
28
70
300
1500
R
j
V =600V, T =150°C
R
j
Page 2
2004-03-18
Rev. 2.0
SDT08S60
Electrical Characteristics, at T = 25 °C, unless otherwise specified
j
Parameter
Symbol
Values
Unit
min.
typ. max.
AC Characteristics
-
-
24
-
-
nC
ns
Total capacitive charge
Q
c
V =400V, I =8A, di /dt=200A/µs, T =150°C
R
F
F
j
Switching time
t
n.a
rr
V =400V, I =8A, di /dt=200A/µs, T =150°C
R
F
F
j
Total capacitance
C
pF
V =0V, T =25°C, f=1MHz
-
-
-
280
26
18
-
-
-
R
C
V =300V, T =25°C, f=1MHz
R
C
V =600V, T =25°C, f=1MHz
R
C
Page 3
2004-03-18
Rev. 2.0
SDT08S60
1 Power dissipation
= f (T )
2 Diode forward current
I = f (T )
P
tot
C
F
C
parameter: T ≤175 °C
j
SDT08S60
70
9
W
A
60
55
50
45
40
35
30
25
20
15
10
5
7
6
5
4
3
2
1
0
0
0
0
20 40 60 80 100 120 140 160
190
20 40 60 80 100 120 140
180
°C
°C
T
T
C
C
3 Typ. forward characteristic
4 Typ. forward power dissipation vs.
average forward current
I = f (V )
F
F
parameter: T , tp = 350 µs
P
=f(I ) T =100°C, d = t /T
36
F(AV)
F
C
p
16
d=1
W
A
150°C
125°C
100°C
25°C
d=0,5
d=0,2
d=0,1
28
24
20
16
12
8
12
-40°C
10
8
6
4
2
4
0
0
0
0.25 0.5 0.75
1
1.25 1.5 1.75
2
2.5
0
2
4
6
8
10
12
16
V
A
I
V
F(AV)
F
Page 4
2004-03-18
Rev. 2.0
SDT08S60
5 Typ. reverse current vs. reverse voltage
I =f(V )
6 Transient thermal impedance
= f (t )
Z
R
R
thJC
p
parameter : D = t /T
p
10 2
µA
SDT08S60
10 1
K/W
10 0
10 1
10 0
150°C
125°C
100°C
25°C
10 -1
10 -2
10 -3
D = 0.50
0.20
10 -1
10 -2
10 -3
0.10
0.05
single pulse
10 -4
0.02
0.01
10 -5
100 150 200 250 300 350 400 450 500
600
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2
10 0
s
V
t
V
p
R
7 Typ. capacitance vs. reverse voltage
8 Typ. C stored energy
C= f(V )
E =f(V )
R
C
R
parameter: T = 25 °C, f = 1 MHz
C
5
300
pF
µJ
4
3.5
3
240
220
200
180
160
140
120
100
80
2.5
2
1.5
1
60
40
0.5
0
20
0
10 0
10 1
10 2
10 3
0
100
200
300
400
600
V
V
V
V
R
R
Page 5
2004-03-18
Rev. 2.0
SDT08S60
Q =f(di /dt)
c
F
parameter: T = 150 °C
j
35
nC
I *2
F
I
F
25
I *0.5
F
20
15
10
5
0
0
100 200 300 400 500 600 700 800
1000
A/µs
di /dt
F
Page 6
2004-03-18
Rev. 2.0
SDT08S60
TO-220-2-2
A
N
P
dimensions
symbol
[mm]
[inch]
min max
10.10 0.3819 0.3976
15.90 0.6024 0.6260
E
min
9.70
15.30
0.65
3.55
2.60
9.00
13.00
17.20
4.40
0.40
max
D
A
B
C
D
E
F
G
H
J
U
0.85
3.85
3.00
9.40
0.0256 0.0335
0.1398 0.1516
0.1024 0.1181
0.3543 0.3701
V
B
H
F
14.00 0.5118 0.5512
17.80 0.6772 0.7008
W
4.80
0.60
0.1732 0.1890
0.0157 0.0236
0.41 typ.
K
L
1.05 typ.
J
M
N
P
T
U
V
W
X
2.54 typ.
4.4 typ.
0.1 typ.
0.173 typ.
0.0433 0.0551
0.095 typ.
0.26 typ.
0.51 typ.
0.295 typ.
0.0000 0.0157
X
L
1.10
1.40
G
2.4 typ.
6.6 typ.
13.0 typ.
7.5 typ.
0.00
0.40
T
C
M
K
Page 7
2004-03-18
Rev. 2.0
SDT08S60
Published by
Infineon Technologies AG,
Bereichs Kommunikation
St.-Martin-Strasse 53,
D-81541 München
© Infineon Technologies AG 1999
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as warranted
characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list).
Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device
or system Life support devices or systems are intended to be implanted in the human body, or to support
and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health
of the user or other persons may be endangered.
Page 8
2004-03-18
Rev. 2.0
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