SP000216312 [INFINEON]
Power Field-Effect Transistor,;
| 型号： | SP000216312 |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor, |
| 文件： | 总16页 (文件大小：809K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SPP11N60C3
SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185
Cool MOS™ Power Transistor
Feature
V
@ T
650
0.38
11
V
Ω
A
DS
jmax
R
DS(on)
• New revolutionary high voltage technology
• Ultra low gate charge
I
D
PG-TO220FP
PG-TO262
PG-TO220
• Periodic avalanche rated
• Extreme dv/dt rated
3
• High peak current capability
• Improved transconductance
2
1
P-TO220-3-31
• PG-TO-220-3-31;-3-111: Fully isolated package (2500 VAC; 1 minute)
Type
Package
Ordering Code
Q67040-S4395
Q67042-S4403
Marking
11N60C3
11N60C3
SPP11N60C3
SPI11N60C3
SPA11N60C3
SPA11N60C3E8185
PG-TO220
PG-TO262
11N60C3
11N60C3
PG-TO220
PG-TO220
FP Q67040-S4408
11N60C3
Maximum Ratings
Parameter
Symbol
Value
Unit
SPA
SPP_I
Continuous drain current
I
A
D
1)
T = 25 °C
11
7
11
C
1)
T = 100 °C
7
C
Pulsed drain current, t limited by T
I
D puls
33
33
A
p
jmax
Avalanche energy, single pulse
E
340
340
mJ
AS
I =5.5A, V =50V
D
DD
2)
E
Avalanche energy, repetitive t limited by T
AR
0.6
0.6
AR
jmax
I =11A, V =50V
D
DD
Avalanche current, repetitive t limited by T
I
11
20
11
20
30
33
A
V
AR
jmax
AR
Gate source voltage static
V
V
P
T
GS
GS
tot
Gate source voltage AC (f >1Hz)
30
Power dissipation, T = 25°C
125
W
C
Operating and storage temperature
,
T
-55...+150
°C
j
stg
7)
Reverse diode dv/dt
dv/dt
15
V/ns
Rev. 3 . 3
Page 1
2012-10-16
SPP11N60C3
SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185
Maximum Ratings
Parameter
Symbol
Value
Unit
Drain Source voltage slope
dv/dt
50
V/ns
V
= 480 V, I = 11 A, T = 125 °C
D j
DS
Thermal Characteristics
Parameter
Symbol
Values
Unit
min.
typ. max.
R
-
-
-
-
-
-
-
-
1
K/W
Thermal resistance, junction - case
Thermal resistance, junction - case, FullPAK
Thermal resistance, junction - ambient, leaded
Thermal resistance, junction - ambient, FullPAK
SMD version, device on PCB:
thJC
3.8
62
80
R
thJC_FP
R
thJA
R
thJA_FP
R
thJA
@ min. footprint
-
-
-
-
35
-
62
-
2
@ 6 cm cooling area
3)
260 °C
Soldering temperature, wavesoldering
T
sold
4)
1.6 mm (0.063 in.) from case for 10s
Electrical Characteristics, at T =25°C unless otherwise specified
j
Parameter
Symbol
Conditions
Values
Unit
min.
600
-
typ. max.
V
V
=0V, I =0.25mA
-
-
-
V
Drain-source breakdown voltage
Drain-Source avalanche
breakdown voltage
(BR)DSS GS
D
V
=0V, I =11A
700
V
GS
D
(BR)DS
I =500µA, V =V
2.1
3
3.9
Gate threshold voltage
V
I
D
GS DS
GS(th)
V
=600V, V =0V,
DS GS
µA
Zero gate voltage drain current
DSS
T =25°C
-
-
-
0.1
1
j
T =150°C
-
-
100
j
V
V
=30V, V =0V
100 nA
Gate-source leakage current
I
GS
DS
GSS
=10V, I =7A
Drain-source on-state resistance R
Ω
GS
D
DS(on)
T =25°C
-
-
-
0.34
0.92
0.86
0.38
j
T =150°C
-
-
j
R
f=1MHz, open drain
Gate input resistance
G
Rev.
3 . 3
Page 2
2012-10-16
SPP11N60C3
SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185
Electrical Characteristics
Parameter
Symbol
Conditions
Values
Unit
S
min.
typ. max.
Transconductance
g
V
≥2*I *R ,
DS DS(on)max
-
8.3
-
fs
D
I =7A
D
Input capacitance
C
C
C
C
V
=0V, V =25V,
GS DS
-
-
-
-
1200
390
30
-
-
-
-
pF
iss
f=1MHz
Output capacitance
oss
rss
Reverse transfer capacitance
5)
V
V
=0V,
GS
45
Effective output capacitance,
energy related
o(er)
=0V to 480V
DS
6)
-
85
-
Effective output capacitance,
C
o(tr)
time related
Turn-on delay time
Rise time
t
V
=380V, V =0/10V,
GS
-
-
-
-
10
5
-
-
ns
d(on)
DD
I =11A,
t
D
r
R =6.8Ω
Turn-off delay time
Fall time
t
44
5
70
9
G
d(off)
t
f
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Q
Q
Q
V
=480V, I =11A
-
-
-
5.5
22
45
-
-
nC
gs
gd
g
DD
D
V
V
=480V, I =11A,
60
Gate charge total
DD
D
=0 to 10V
GS
V
=480V, I =11A
-
5.5
-
V
Gate plateau voltage
V(plateau)
DD
D
1
Limited only by maximum temperature
2
3
Repetitve avalanche causes additional power losses that can be calculated as P =E *f.
AR
AV
Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
4
Soldering temperature for TO-263: 220°C, reflow
5
C
C
is a fixed capacitance that gives the same stored energy as C
while V is rising from 0 to 80% V
.
oss
DS
o(er)
o(tr)
DSS
6
is a fixed capacitance that gives the same charging time as C
while V is rising from 0 to 80% V
.
oss
DS
DSS
7
ISD<=ID, di/dt<=400A/us, VDClink=400V, Vpeak<VBR, DSS, Tj<Tj,max.
Identical low-side and high-side switch.
Rev.
3 .3
Page 3
2012-10-16
SPP11N60C3
SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185
Electrical Characteristics
Parameter
Symbol
Conditions
Values
Unit
min.
typ. max.
T =25°C
-
-
-
11
A
Inverse diode continuous
forward current
I
C
S
Inverse diode direct current,
pulsed
I
-
33
SM
V
=0V, I =I
F S
-
-
-
-
-
1
400
6
1.2
V
Inverse diode forward voltage
Reverse recovery time
V
SD
GS
t
V =480V, I =I ,
600 ns
rr
R
F
S
di /dt=100A/µs
Reverse recovery charge
Peak reverse recovery current
Q
-
-
-
µC
A
F
rr
I
41
rrm
T =25°C
1200
A/µs
Peak rate of fall of reverse
recovery current
di /dt
rr
j
Typical Transient Thermal Characteristics
Symbol
Value
Unit
Symbol
Value
Unit
SPP_I
0.015
0.03
SPP_I
SPA
0.15
SPA
R
K/W
C
0.0001878 0.0001878 Ws/K
0.0007106 0.0007106
th1
th1
R
0.03
C
th2
th2
R
0.056
0.197
0.216
0.083
0.056
0.194
0.413
2.522
C
0.000988
0.002791
0.007285
0.063
0.000988
0.002791
0.007401
0.412
th3
th3
R
C
th4
th4
Rth5
C
th5
R
C
th6
th6
External Heatsink
Tj
Rth1
Rth,n
Tcase
Ptot (t)
Cth1
Cth2
Cth,n
Tamb
Rev
. 3.3
Page 4
2012-10-16
SPP11N60C3
SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185
1 Power dissipation
= f (T )
2 Power dissipation FullPAK
P
P
= f (T )
tot
C
tot
C
SPP11N60C3
35
140
W
W
120
110
100
90
80
70
60
50
40
30
20
10
0
25
20
15
10
5
0
0
20
40
60
80 100 120
160
0
20
40
60
80 100 120
160
°C
°C
T
T
C
C
3 Safe operating area
I = f ( V
4 Safe operating area FullPAK
I = f (V
)
)
DS
D
DS
D
parameter : D = 0 , T =25°C
parameter: D = 0, T = 25°C
C
C
10 2
10 2
A
A
10 1
10 1
10 0
10 0
tp = 0.001 ms
tp = 0.01 ms
tp = 0.1 ms
tp = 0.001 ms
tp = 0.01 ms
tp = 0.1 ms
10 -1
10 -1
tp = 1 ms
tp = 10 ms
DC
tp = 1 ms
DC
10 -2
10 -2
10 0
10 1
10 2
10 3
DS
10 0
10 1
10 2
10 3
DS
V
V
V
V
Rev.
3 .3
Page 5
2012-10-16
2SPP11N60C3
SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185
5 Transient thermal impedance
= f (t )
6 Transient thermal impedance FullPAK
Z
Z
= f (t )
thJC
p
thJC p
parameter: D = t /T
p
parameter: D = t /t
p
10 1
10 1
K/W
K/W
10 0
10 -1
10 -2
10 -3
10 -4
10 0
10 -1
10 -2
10 -3
10 -4
D = 0.5
D = 0.2
D = 0.1
D = 0.5
D = 0.2
D = 0.1
D = 0.05
D = 0.02
D = 0.01
single pulse
D = 0.05
D = 0.02
D = 0.01
single pulse
10 -7
10 -6
10 -5
10 -4
10 -3
10 -1
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1
10 1
s
s
t
t
p
p
7 Typ. output characteristic
I = f (V ); T =25°C
8 Typ. output characteristic
I = f (V ); T =150°C
D
DS
j
D
DS
j
parameter: t = 10 µs, V
parameter: t = 10 µs, V
p
GS
p
GS
40
22
20V
10V
20V
A
A
8V
7V
8V
18
7.5V
32
7V
6V
16
14
12
10
8
28
24
20
16
12
8
6,5V
5.5V
5V
6V
5,5V
6
4.5V
4V
5V
4
4
4,5V
2
0
0
0
0
3
6
9
12 15 18 21
27
5
10
15
25
V
V
V
V
DS
DS
Rev. 3 .3
Page 6
2012-10-16
SPP11N60C3
SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185
9 Typ. drain-source on resistance
=f(I )
10 Drain-source on-state resistance
R = f (T )
DS(on)
R
DS(on)
D
j
parameter: T =150°C, V
parameter : I = 7 A, V = 10 V
j
GS
D
SPP11N60C3
GS
2.1
Ω
2
Ω
1.8
1.6
1.4
1.2
1
4.5V
6V
4V
5V
5.5V
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
0.8
0.6
0.4
98%
typ
6.5V
8V
20V
°C
0
2
4
6
8
10 12 14 16
20
-60
-20
20
60
100
180
A
I
T
D
j
11 Typ. transfer characteristics
12 Typ. gate charge
= f (Q
I = f ( V ); V ≥ 2 x I x R
V
)
Gate
D
GS
DS
D
DS(on)max
GS
parameter: t = 10 µs
p
parameter: I = 11 A pulsed
D
SPP11N60C3
40
16
A
V
25°C
32
28
24
20
16
12
8
12
0,2 VDS max
0,8 VDS max
10
150°C
8
6
4
2
0
4
0
0
2
4
6
8
10
12
15
GS
0
10
20
30
40
50
70
Gate
V
nC
V
Q
Rev.
3.3
Page 7
2012-10-16
SPP11N60C3
SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185
13 Forward characteristics of body diode
I = f (V
14 Typ. switching time
t = f (I ), inductive load, T =125°C
)
F
SD
D
j
parameter: T , tp = 10 µs
10 2
par.: V =380V, V =0/+13V, R =6.8Ω
DS GS G
j
SPP11N60C3
70
ns
A
60
55
50
45
40
35
30
25
20
15
10
5
td(off)
10 1
10 0
Tj = 25 °C typ
tf
Tj = 150 °C typ
td(on)
Tj = 25 °C (98%)
Tj = 150 °C (98%)
tr
10 -1
0
0
0.4
0.8
1.2
1.6
2
2.4
3
0
2
4
6
8
12
V
A
I
V
D
SD
15 Typ. switching time
t = f (R ), inductive load, T =125°C
16 Typ. drain current slope
di/dt = f(R ), inductive load, T = 125°C
G
j
G
j
par.: V =380V, V =0/+13V, I =11 A
par.: V =380V, V =0/+13V, I =11A
DS GS D
DS
GS
D
350
3000
ns
A/µs
250
200
150
100
50
2000
1500
1000
500
0
td(off)
td(on)
tr
tf
di/dt(off)
di/dt(on)
0
0
10
20
30
40
50
70
0
20
40
60
80
120
Ω
Ω
R
R
G
G
Rev.
3 .3
Page 8
2012-10-16
SPP11N60C3
SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185
17 Typ. drain source voltage slope
dv/dt = f(R ), inductive load, T = 125°C
18 Typ. switching losses
E = f (I ), inductive load, T =125°C
G
j
D
j
par.: V =380V, V =0/+13V, I =11A
par.: V =380V, V =0/+13V, R =6.8Ω
DS GS G
DS
GS
D
140
0.04
*) Eon includes SPD06S60 diode
commutation losses
V/ns
mWs
dv/dt(off)
120
110
100
90
0.03
0.025
0.02
0.015
0.01
0.005
0
80
70
60
50
Eon*
40
dv/dt(on)
30
Eoff
20
10
0
10
20
30
40
50
70
0
2
4
6
8
12
A
Ω
I
R
D
G
19 Typ. switching losses
E = f(R ), inductive load, T =125°C
20 Avalanche SOA
= f (t
I
)
AR
G
j
AR
par.: V =380V, V =0/+13V, I =11A
par.: T ≤ 150 °C
DS
GS
D
j
0.24
11
*) Eon includes SPD06S60 diode
commutation losses
A
mWs
9
8
7
6
5
4
3
2
1
0
0.16
0.12
0.08
0.04
0
Eoff
Tj(START)=25°C
Tj(START)=125°C
Eon*
0
10
20
30
40
50
70
10 -3 10 -2 10 -1 10 0 10 1 10 2
10 4
µs
Ω
t
R
AR
G
Rev 3 .3
Page 9
2012-10-16
SPP11N60C3
SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185
21 Avalanche energy
= f (T )
22 Drain-source breakdown voltage
E
V
= f (T )
AS
j
(BR)DSS j
par.: I = 5.5 A, V = 50 V
D
DD
SPP11N60C3
350
720
V
mJ
680
660
640
620
600
580
560
540
250
200
150
100
50
0
20
40
60
80
100
120
160
-60
-20
20
60
100
180
°C
°C
T
T
j
j
23 Avalanche power losses
= f (f )
24 Typ. capacitances
C = f (V
P
)
DS
AR
parameter: E =0.6mJ
parameter: V =0V, f=1 MHz
AR
GS
10 4
300
pF
W
C
iss
10 3
200
150
100
50
10 2
C
oss
10 1
C
rss
10 0
0
10 4
10 5
10 6
0
100
200
300
400
600
DS
Hz
V
V
f
Rev.
3 .3
Page 10
2012-10-16
SPP11N60C3
SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185
25 Typ. C
stored energy
oss
E
=f(V
)
oss
DS
7.5
µJ
6
5.5
5
4.5
4
3.5
3
2.5
2
1.5
1
0.5
0
0
100
200
300
400
600
V
V
DS
Definition of diodes switching characteristics
Rev 3 .3
Page 11
2012-10-16
SPP11N60C3
SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185
PG-TO-220-3-1, PG-TO-220-3-21
Page 12
Rev. 3.3
2012-10-16
SPP11N60C3
SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185
PG-TO-220-3-31/3-111: Outline/ Fully isolated package (2500VAC; 1 minute).
Rev. 3.3
Page 13
2012-10-29
SPP11N60C3
SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185
PG-TO-262-3-1 (I²-PAK)
Page 14
Rev. 3.3
2012-10-16
SPP11N60C3
SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185
PG-TO220-3-36:Outline fully isolated package (2500VAC; 1 minute)
Page 15
Rev. 3.3
2012-10-16
SPP11N60C3
SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2007 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.
Rev.
3.3
Page 16
2012-10-16
相关型号：
SP000216354
Power Field-Effect Transistor, 20.7A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220FP, 3 PIN
INFINEON
SP000219534
Smart High-Side Power Switch For Industrial Applications Four Channels: 4 x 140mз
INFINEON
©2020 ICPDF网 联系我们和版权申明