SP000219527 [INFINEON]
Smart Power High-Side-Switch or Industrial Applications; 智能功率高边开关或工业应用
| 型号： | SP000219527 |
| 厂家： | 
Infineon |
| 描述： | Smart Power High-Side-Switch or Industrial Applications |
| 文件： | 总20页 (文件大小：339K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ITS 4880 R
Smart Power High-Side-Switch
for Industrial Applications
Eight Channels: 8 x 200 mΩ
Features
Product Summary
• Output current 0,625 A per channel
• Short circuit protection
• Maximum current internally limited
• Overload protection
Overvoltage protection
Operating voltage
On-state resistance
Operating temperature
V
V
R
47
11...45
200
V
V
mΩ
bb(AZ)
bb(on)
ON
T
-30...+85 °C
a
• Input protection
• Overvoltage protection (including load dump)
• Undervoltage shutdown with auto-
restart and hysteresis
• Switching inductive loads
• Thermal shutdown with restart
• Thermal independence of separate channels
• ESD - Protection
PG-DSO-36
• Loss of GND and loss of V protection
bb
• Very low standby current
• Reverse battery protection
• Programmable input for CMOS or V /2
bb
• Common diagnostic output ( current output )
for overtemperature
Application
• Output driver for industrial applications ( PLC )
• All types of resistive, inductive and capacitive loads
• µC or optocoupler compatible power switch for 24 V DC industrial applications
• Replaces electromechanical relays and discrete circuits
General Description
N channel vertical power FET with charge pump, ground referenced CMOS or V /2
bb
compatible input and common diagnostic feedback, monolithically integrated in
Smart SIPMOS technology. Providing embedded protective functions.
2006-03-09
Page 1
ITS 4880 R
Block Diagram
DIAG
V
bb
Undervoltage
shutdown
with restart
LS
Input
Level Shifter
Common
Diagnostic
Overvoltage
protection
Voltage
source
Logic
each
Logic
each
channel
Logic
each
channel
Gate
protection
Current
limit
channel
OUT1
Limit for
unclamped
ind. loads
Temperature
sensor
Charge pump
Level shifter
Rectifier
Logic
each channel
OUT2
OUT3
OUT4
OUT5
IN1
Logic
ESD
R
IN
IN2
IN3
IN4
IN5
IN6
IN7
Channel 2...7
OUT6
OUT7
Gate
protection
Current
limit
OUT8
Limit for
Temperature
sensor
Charge pump
Level shifter
Rectifier
unclamped
ind. loads
IN8
Logic
ESD
R
IN
miniPROFET
GND
Signal GND
2006-03-09
Page 2
ITS 4880 R
Pin
1,2,4,5
3
Symbol
NC
Function
not connected
Enable pin for switching the input-levels to V /2
LS
bb
IN1
IN2
IN3
IN4
IN5
IN6
IN7
IN8
6
7
8
9
Input, activates channel 1 in case of logic high signal
Input, activates channel 2 in case of logic high signal
Input, activates channel 3 in case of logic high signal
Input, activates channel 4 in case of logic high signal
Input, activates channel 5 in case of logic high signal
Input, activates channel 6 in case of logic high signal
Input, activates channel 7 in case of logic high signal
Input, activates channel 8 in case of logic high signal
not connected
10
11
12
13
14-18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
TAB
NC
GND
DIAG
OUT8
OUT8
OUT7
OUT7
OUT6
OUT6
OUT5
OUT5
OUT4
OUT4
OUT3
OUT3
OUT2
OUT2
OUT1
OUT1
Vbb
Logic ground
Common diagnostic output for overtemperature
High-side output of channel 8
High-side output of channel 8
High-side output of channel 7
High-side output of channel 7
High-side output of channel 6
High-side output of channel 6
High-side output of channel 5
High-side output of channel 5
High-side output of channel 4
High-side output of channel 4
High-side output of channel 3
High-side output of channel 3
High-side output of channel 2
High-side output of channel 2
High-side output of channel 1
High-side output of channel 1
Positive power supply voltage
2006-03-09
Page 3
ITS 4880 R
Maximum Ratings
Parameter
Symbol
Value
Unit
at T = -40...135 °C, unless otherwise specified
j
1)
V
Supply voltage
Continuous input voltage
V
V
V
-1 ...45
bb
IN
2)
-10...V
bb
-1...V
Continuous voltage at LS-pin
LS
bb
self limited
A
mA
A
Load current (Short - circuit current, see page 6)
Current through input pin (DC), each channel
I
L
I
±5
1.6
IN
1)
Reverse current through GND-pin
-I
T
T
T
GND
Junction temperature
Operating temperature
Storage temperature
°C
internal limited
-30...+85
-40 ... +105
3.3
j
°C
°C
W
J
a
stg
3)
P
Power dissipation
tot
4)
Inductive load switch-off energy dissipation
E
AS
single pulse, T = 125 °C, I = 0.625 A
j
L
one channel active
all channels simultaneously active ( each channel )
10
1
4)
5)
V
Load dump protection V
= V + V
V
V
LoadDump
A
S
Loaddump
V = low or high
IN
td = 400 ms, R = 2 Ω, R = 27 Ω, V = 13.5 V
td = 350 ms, R = 2 Ω, R = 47 Ω, V = 27 V
90
117
I
L
A
I
L
A
kV
A
Electrostatic discharge voltage (Human Body Model)
according to ANSI EOS/ESD - S5.1 - 1993, ESD STM5.1 - 1998
Input pin, LS pin, Common diagnostic pin
all other pins
ESD
±1
±5
4
1)4)
Continuous reverse drain current
, each channel
I
S
1
2
3
defined by P
tot
At V > Vbb, the input current is not allowed to exceed ±5 mA.
IN
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70µm thick) copper area for drain
connection. PCB is vertical without blown air.
4
5
not subject to production test, specified by design
V
is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839 .
Loaddump
Supply voltages higher thanV
150Ω resistor in GND connection. A resistor for the protection of the input is integrated.
require an external current limit for the GND pin, e.g. with a
bb(AZ)
2006-03-09
Page 4
ITS 4880 R
Unit
Electrical Characteristics
Parameter
Symbol
Values
at T = -25...125°C, V =15...30V, unless otherwise specified
min. typ. max.
j
bb
Thermal Characteristics
R
-
-
-
-
-
-
1.5 K/W
50
38
Thermal resistance junction - case
Thermal resistance @ min. footprint
thJC
R
2
1)
Thermal resistance @ 6 cm cooling area
R
Load Switching Capabilities and Characteristics
On-state resistance
R
mΩ
200
320
ON
T = 25 °C, I = 0.5 A
-
-
-
150
270
50
j
L
T = 125 °C
j
100
150
2
Turn-on time
to 90% V
t
µs
OUT
on
R = 47 Ω, V = 0 to 10 V
L
IN
-
-
-
75
1
Turn-off time
to 10% V
t
off
OUT
R = 47 Ω, V = 10 to 0 V
L
IN
Slew rate on 10 to 30% V
,
dV/dt
V/µs
OUT
on
R = 47 Ω, V = 15 V
L
bb
1
2
Slew rate off 70 to 40% V
,
-dV/dt
off
OUT
R = 47 Ω, V = 15 V
L
bb
1
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70µm thick) copper area for drain
connection. PCB is vertical without blown air.
2006-03-09
Page 5
ITS 4880 R
Unit
Electrical Characteristics
Parameter
Symbol
Values
at T = -25...125°C, V =15...30V, unless otherwise specified
min. typ. max.
j
bb
Operating Parameters
Operating voltage
Undervoltage shutdown
Undervoltage restart
Undervoltage hysteresis
11
7
-
-
-
-
45
10.5
11
-
V
V
V
V
-
0.5
∆V
bb(under)
∆V
= V
- V
bb(under)
bb(u rst) bb(under)
-
-
-
50
5
5
150 µA
12 mA
10 µA
Standby current
Operating current
Leakage output current (included in I
I
I
GND
I
L(off)
1)
)
bb(off)
V = low , each channel
IN
2)
Protection Functions
A
Initial peak short circuit current limit
I
L(SCp)
T = -25 °C, V = 30 V, t = 700 µs
-
-
-
1.4
-
1.9
-
-
j
bb
m
T = 25 °C
j
T = 125 °C
0.7
j
-
1.1
-
Repetitive short circuit current limit
T = T (see timing diagrams)
I
L(SCr)
j
jt
47
53
60
V
Output clamp (inductive load switch off)
at V = V - V
V
V
T
∆T
ON(CL)
,
OUT
bb
ON(CL)
3)
47
135
-
-
-
10
-
-
-
Overvoltage protection
bb(AZ)
jt
4)
°C
K
Thermal overload trip temperature
Thermal hysteresis
jt
1
2
contains all input currents
Integrated protection functions are designed to prevent IC destruction under fault conditions
described in the data sheet. Fault conditions are considered as "outside" normal operating range.
Protection functions are not designed for continuous repetitive operation.
3
see also V
in circuit diagram on page 10
ON(CL)
4
higher operating temperature at normal function for each channel available
2006-03-09
Page 6
ITS 4880 R
Unit
Electrical Characteristics
Parameter
Symbol
Values
at T = -25...125°C, V =15...30V, unless otherwise specified
min. typ. max.
j
bb
Input
1)
-10
-
0.8
-
-
-
-
-
V
Continuous input voltage
V
V
V
V
V
V
bb
2.2
-
IN
2)
2)
Input turn-on threshold voltage CMOS
Input turn-off threshold voltage CMOS
IN(T+)
IN(T-)
2)
Vbb/2+1
Input turn-on threshold voltage V /2
bb
2)
-
-
Input turn-off threshold voltage V /2
Vbb/2-1
bb
-
8
-
80
-
150
2
0.3
-
-
-
-
340
3
800
-
Input threshold hysteresis
Off state input current CMOS ( each channel )
On state input current CMOS ( each channel )
∆V
I
-
70
-
260
-
µA
I
Off state input current V /2 ( each channel )
I
I
IN(on)
bb
On state input current V /2 ( each channel )
bb
Input delay time at switch on V
Input resistance (see page 10)
Internal pull down resistor at LS-pin
t
µs
kΩ
bb
d(Vbbon)
4
-
R
I
3)
300
R
LS
Diagnostic Characteristics
Common diagnostic output current
( overtemperature of any channel )
4)
2
-
3
-
4
2
mA
µA
I
I
diag
T = 135 °C
j
Common diagnostic output leakage current
1
At V > Vbb, the input current is not allowed to exceed ±5 mA.
IN
2
3
see page 9
LS-pin is connected to V
bb
4
see page 10
2006-03-09
Page 7
ITS 4880 R
Unit
Electrical Characteristics
Parameter
Symbol
Values
at T = -25...125°C, V =15...30V, unless otherwise specified
min. typ. max.
j
bb
Reverse Battery
Reverse battery voltage
1)
V
-V
-V
bb
R
R
= 0 Ω
= 150 Ω
-
-
-
-
1
45
GND
GND
Diode forward on voltage
I = 1.25 A, V = low , each channel
-
-
1.2
ON
F
IN
1
defined by P
tot
2006-03-09
Page 8
ITS 4880 R
Truth table for common diagnostic pin ( LED-driver ):
Input
level
L
Output
level
Diagnostic
Normal
L
H
L
L
L
L
L
L
L
L
operation
Short circuit
to GND
H
L
H
L
Undervoltage
L
H
L
L
Overtemperature
L
H
L
L
1)
H
L = no diagnostic output current
H = diagnostic output current typ. 2 mA (see page 7)
Programmable input:
IN
Logic
V
bb
Input
Level Shifter
LS
GND
typ . 800 kΩ
Functional description LS-Pin:
With using the LS-pin it is possible to change the input turn-on and -off threshold voltage
between CMOS and half supply voltage level.
Therefore you have either to connect the LS-pin to GND ( state 1 ) or to supply voltage ( state 2 ).
If the LS-pin is not connected the input threshold voltages are automatically at CMOS level,
caused by an internal pull down to GND with typ. 800kΩ ( see circuit ).
State 1: LS-Pin to GND
State 2: LS-Pin to supply voltage
CMOS - Input level
/2 - Input level
V
bb
1
toggeling with restart
2006-03-09
Page 9
ITS 4880 R
Terms
Inductive and overvoltage output clamp
each channel
each channel
+ V
bb
I
I
bb
DIAG
V
Z
V
V
ON
DIAG
LS
bb
V
ON
I
I
IN
L
OUT1...8
IN1...8
PROFET
V
OUT
bb
GND
V
GND
IN
I
V
GND
OUT
V
ON
clamped to 47 V min.
Input circuit (ESD protection)
Overvoltage protection of logic part
each channel
+ V
b b
V b b
V
Z 2
IN
R
I
IN
L o g ic
S T
I
I
G N D
G N D
R
G N D
o p tio n a l
The use of ESD zener diodes as voltage clamp
at DC conditions is not recommended
S ig n a l G N D
VZ2=Vbb(AZ)=47 V min.,
RI=3 kΩ typ., RGND=150Ω
Reverse battery protection
each channel
Common diagnostic output
V
-
b b
R
I
Vbb
IN
O U T
P o w e r
In v e rs e
D io d e
Logic
L o g ic
DIAG
G N D
R
G N D
o p tio n a l
R
L
ESD
P o w e r G N D
S ig n a l G N D
R
=150Ω, R =3kΩ typ.,
I
GND
Temperature protection is not active during
inverse current
Output current typ. 2 mA
2006-03-09
Page 10
ITS 4880 R
GND disconnect
Inductive Load switch-off energy
dissipation, each channel
E
bb
DIAG
LS
V
E
bb
AS
E
E
Load
L
V
IN1...8
OUT1...8
bb
PROFET
OUT
IN
PROFET
GND
L
=
V
V
V
bb
IN
GND
GND
Z
L
{
E
R
R
L
GND disconnect with GND pull up
2
Energy stored in load inductance: E = ½ * L * I
L
While demagnetizing load inductance,
the enérgy dissipated in PROFET is
L
LS
V
DIAG
OUT1...8
bb
E
= E + E - E = V
bb
* i (t) dt,
ON(CL) L
AS
L
R
IN1...8
with an approximate solution for R > 0Ω:
PROFET
L
GND
I
L
* L
I
L
* R
L
E
A S
=
* (V bb +|V O U T ( C L )| ) * ln(1 +
)
2 * R
L
|V O U T ( C L )|
V
V
V
V
IN
ST
GND
bb
V
disconnect with charged inductive
bb
load
LS
IN1...8
V
DIAG
OUT1...8
bb
high
PROFET
GND
V
bb
2006-03-09
Page 11
ITS 4880 R
Typ. on-state resistance
= f(T ) ; V = 15V ; V = high
Typ. on-state resistance
R
R
ON
= f(V ); I = 0.5A ; V = high
ON
j
bb
in
bb
L
in
0.3
0.3
125°C
Ω
Ω
0.2
0.2
25°C
0.15
0.1
0.05
0
0.15
0.1
0.05
0
-25°C
-25
0
25
50
75
125
10
15
20
25
30
35
40
50
°C
V
T
V
bb
j
Typ. initial peak short circuit current limit
= f(T ) ; V = 24V
Typ. input delay time at switch on V
bb
I
t
= f(V ); Tj = -25...125 °C
L(SCp)
j
bb
d(Vbbon)
bb
2
0.5
A
ms
1.6
1.4
1.2
1
0.3
0.2
0.1
0.8
0.6
0.4
0.2
0
0
-25
0
25
50
75
125
10
15
20
25
30
35
40
50
°C
V
T
V
j
bb
2006-03-09
Page 12
ITS 4880 R
Typ. turn on time
Typ. turn off time
t
= f(T ); R = 47Ω
t
= f(T ); R = 47Ω
on
j
L
off
j
L
100
100
µs
µs
80
70
60
50
40
30
20
10
0
80
70
60
50
40
30
20
10
0
-25
0
25
50
75
125
-25
0
25
50
75
125
°C
°C
T
T
j
j
Typ. slew rate on
Typ. slew rate off
dV/dt = f(T ) ; R = 47 Ω, V = 15 V
dV/dt = f(T ); R = 47 Ω, V = 15 V
on
j
L
bb
off
j
L
bb
1
1.4
V/s
V/s
1
0.8
0.6
0.4
0.2
0
0.6
0.4
0.2
0
-25
0
25
50
75
125
-25
0
25
50
75
125
°C
°C
T
T
j
j
2006-03-09
Page 13
ITS 4880 R
Typ. leakage current
= f(T ) ; V = 30V ; V = low
Typ. standby current
= f(T ) ; V = 30V ; V = low
I
I
L(off)
j
bb
IN
bb(off)
j
bb
IN
4
50
µA
µA
3
2.5
2
30
20
10
0
1.5
1
0.5
0
-25
0
25
50
75
125
-25
0
25
50
75
125
°C
°C
T
T
j
j
Typ. common diagnostic output current
Typ. internal pull down resistor at LS-pin
I
= f(V ) ; T = 135°C
R
= f(V ); V = V
diag
bb
j
LS
bb
LS
bb
3
1.5
MΩ
125°C
25°C
mA
1
0.75
0.5
2.8
2.7
2.6
2.5
-25°C
0.25
0
10
15
20
25
30
35
45
10
15
20
25
30
35
40
50
V
V
V
V
bb
bb
2006-03-09
Page 14
ITS 4880 R
Typ. input current @ CMOS level
I = f(V ); V = 15V
Typ. input current @ CMOS level
I
= f(T ); V = 15V; V = low/high
IN(on/off)
j
bb
IN
IN
IN
bb
V
≤ 0,8V; V = 2,2V
INhigh
INlow
50
50
-25°C
µA
µA
on
off
25°C
125°C
30
30
20
10
0
20
10
0
-25
0
25
50
75
125
0
2.5
5
7.5
10
15
°C
V
T
V
IN
j
Typ. input current @ V /2 level
Typ. input current @ V /2 level
bb
bb
I
= f(T ); V = 30V; V = low/high
I = f(V ); V = 30 V
IN(on/off)
j
bb
IN
IN IN bb
180
200
µA
-25°C
25°C
µA
on
140
120
100
80
off
150
125
100
75
125°C
60
50
40
25
20
0
0
-25
0
25
50
75
125
0
5
10
15
20
30
°C
V
T
V
IN
j
2006-03-09
Page 15
ITS 4880 R
Typ. input threshold voltage
@ CMOS level
Typ. input threshold voltage
@ CMOS level
V
= f(T ) ; V = 15V
V
= f(V ) ; T = 25°C
IN(th) bb j
IN(th)
j
bb
2
2
V
on
off
V
on
1.6
1.4
1.2
1
1.5
1.25
1
off
0.8
0.6
0.4
0.2
0
0.75
0.5
0.25
0
-25
0
25
50
75
125
10
15
20
25
30
35
40
50
°C
V
T
V
j
bb
Typ. input threshold voltage
@ V /2 level
Typ. input threshold voltage
@ V /2 level: LS-pin connected to V
bb
bb
bb
V
= f(T ) ; V = 30V
V
= f(V ) ; T = 25°C
IN(th)
j
bb
IN(th) bb j
16
25
V
V
on
15
14.5
14
20
17.5
15
on
off
off
13.5
13
12.5
10
12.5
12
7.5
5
-25
0
25
50
75
125
10
15
20
25
30
35
40
50
°C
V
T
V
bb
j
2006-03-09
Page 16
ITS 4880 R
Maximum allowable load inductance
for a single switch off, calculated
Maximum allowable inductive switch-off
energy, single pulse
L = f(I ); T
=125°C, V =24V, R =0Ω
E
= f(I ); T
= 125°C, V = 24V
jstart bb
AS
L
L
jstart
bb L
45
3.5
all channels simultaneously active
all channels simultaneously active
H
J
35
30
25
20
15
10
5
2.5
2
1.5
1
0.5
0
0
200
300
400
500
600
800
200
300
400
500
600
800
mA
mA
I
I
L
L
Typ. transient thermal impedance
=f(t ) @ min. footprint
Typ. transient thermal impedance
2
Z
Z
=f(t ) @ 6cm heatsink area
thJA
p
thJA
p
Parameter: D=t /T
Parameter: D=t /T
p
p
10 2
10 2
K/W
K/W
D = 0.5
D = 0.5
D = 0.2
10 1
10 1
D = 0.2
D = 0.1
D = 0.05
D = 0.1
D = 0.05
D = 0.02
10 0
10 0
D = 0.02
D = 0.01
D = 0.01
10 -1
10 -1
D = 0
D = 0
10 -2
10 -2
10 -710 -610 -510 -410 -310 -210 -110 0 10 1 10 2
10 4
10 -710 -610 -510 -410 -310 -210 -110 0 10 1 10 2
10 4
s
s
t
t
p
p
2006-03-09
Page 17
ITS 4880 R
Timing diagrams
Figure 1a: Vbb turn on:
Figure 2b: Switching a lamp
IN
IN
V
bb
VOUT
I L
I L
D IAG
t
DIAG
t d(V bbon)
Figure 2a: Switching a resistive load,
turn-on/off time and slew rate definition
Figure 2c: Switching an inductive load
I N
IN
V
O
U T
V
OUT
9 0 %
t
d V / d t o f f
o n
t
d V / d t o n
o f f
1 0 %
I L
I
L
t
D I A G
DIAG
2006-03-09
Page 18
ITS 4880 R
Figure 3a: Turn on into short circuit,
shut down by overtemperature, restart by cooling
Figure 3b: Short circuit in on-state
shut down by overtemperature, restart by cooling
IN
IN
V O U T
V
O U T
n o rm a l
o p e ra tio n
O u tp u t sh ort to G N D
O u tp u t sho rt to G N D
I
I L
I L
L (S C p)
I
I
L (S C r)
L (S C r)
D IA G
D IA G
t
t
Heating up of the chip may require several milliseconds, depending
on external conditions.
Figure 4: Overtemperature:
Figure 5: Undervoltage shutdown and restart
Reset if T < T
j
jt
IN
IN
V
bb
VO UT
10,5V
V
out
TJ
DIAG
t
DIAG
t
t
d(Vbbon)
2006-03-09
Page 19
ITS 4880 R
Package and ordering code
all dimensions in mm
Ordering code:
ITS 4880 R
SP000219527
1)
1)
±0.1
15.9
±0.15
11
A
B
±0.1
2.8
1.1
+0.07
-0.02
C
0.25
6.3
±0.1
15.74
(Heatslug)
±0.15
0.95
0.1
±0.3
14.2
0.25 B
0.1 C 36x
Seating Plane
13.7 -0.2
36
19
CODE
Index Marking
1
18
0.25+0.13
0.65
M
0.25
C A B
1 × 45˚
17 × 0.65 = 11.05
1) Does not include plastic or metal protrusion of 0.15 max. per side
Published by
Infineon Technologies AG,
St.-Martin-Strasse 53,
D-81669 München
© Infineon Technologies AG 2001
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as a guarantee
of characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and conditions and prices please contact your
nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide
(see address list).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the
types in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device
or system. Life support devices or systems are intended to be implanted in the human body, or to support
and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health
of the user or other persons may be endangered.
2006-03-09
Page 20
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