SP000219823 [INFINEON]
Smart Power High-Side-Switch for Industrial Applications; 智能功率高边开关的工业应用
| 型号： | SP000219823 |
| 厂家： | 
Infineon |
| 描述： | Smart Power High-Side-Switch for Industrial Applications |
| 文件： | 总10页 (文件大小：166K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ISP 452
Smart Power High-Side-Switch
for Industrial Applications
Features
•
•
•
•
•
•
•
•
•
•
•
Short-circuit protection
Input protection
Overtemperature protection with hysteresis
Overload protection
Overvoltage protection
Switching inductive load
Clamp of negative output voltage with inductive loads
Undervoltage shutdown
Maximum current internally limited
Electrostatic discharge (ESD) protection
Reverse battery protection1)
4
3
2
1
Package: PG-SOT 223
Ordering code
Type
ISP 452
SP000219823
Application
•
•
•
µC compatible power switch for 12 V DC grounded loads for industrial applications
All types of resistive, inductive and capacitive loads
Replaces electromechanical relays and discrete circuits
General Description
•
N channel vertical power FET with charge pump, ground referenced CMOS compatible input, monolithically
®
integrated in Smart SIPMOS technology.
•
Providing embedded protection functions.
1
)
With resistor R
=150 Ω in GND connection, resistor in series with IN connections, reverse load current
limited by connected load.
GND
Page 1 of 10
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ISP 452
Block diagram
+ V
bb
4
1
Voltage
source
Gate
Overvoltage
protection
Current
limit
protection
VLogic
ESD-
Diode
OUT
Limit for
Charge pump
Level shifter
Voltage
sensor
unclamped
ind. loads
Temperature
sensor
Rectifier
R
in
3
IN
Load
Logic
ESD
MINI-PROFET
GND
2
Load GND
Signal GND
Pin
1
Symbol
OUT
GND
IN
Function
O
-
Protected high-side power output
Logic ground
2
3
I
Input, activates the power switch in case of logical high signal
Positive power supply voltage
4
Vbb
+
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ISP 452
Maximum Ratings at Tj = 25 °C unless otherwise specified
Parameter
Symbol
Vbb
Values
Unit
V
Supply voltage
40
Load current
self-limited
IL
I
A
L(SC)
Maximum input voltage2)
Maximum input current
VIN
-5.0...Vbb
±5
V
IIN
mA
J
Inductive load switch-off energy dissipation,
EAS
0.5
single pulse
IL = 0.5A, Tj, start = 150°C
(not tested, specified by design)
3
4
)
)
Load dump protection VLoadDump = UA+ Vs
VLoad dump
V
RI=2 Ω , td=400ms, IN= low or high, UA= 13.5 V
(not tested, specified by design)
RL= 24 Ω
60
80
RL= 80 Ω
Electrostatic discharge capability (ESD)5)
PIN 3
PIN 1,2,4
VESD
±1
±2
kV
°C
Junction Temperature
Tj
150
-30 ...+85
-40 ...+105
Operating temperature range
Storage temperature range
Max. power dissipation (DC)6)
Ta
Tstg
Ptot
TA = 25 °C
1.8
W
Thermal resistance
chip - soldering point: RthJS
chip - ambient:6) RthJA
7
70
K/W
2
)
)
At V > V , the input current is not allowed to exceed ±5 mA.
IN bb
3
Supply voltages higher than V
require an external current limit for the GND pin, e.g. with a 150 Ω resistor in the GND connection.
bb(AZ)
A resistor for the protection of the input is integrated.
4
5
6
)
)
)
V
is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839
Load dump
HBM according to MIL-STD 883D, Methode 3015.7
Device on epoxy pcb 40 mm x 40 mm x 1.5 mm with 6 cm copper area for V connection
2
bb
Page 3
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ISP 452
Electrical Characteristics
Parameter and Conditions
Symbol
Values
Unit
at T = 25 °C, V = 13.5V unless otherwise specified
j
bb
min
typ
max
Load Switching Capabilities and Characteristics
On-state resistance (pin 4 to 1)
--
--
0.16
--
0.2
0.4
Ω
IL = 0.5 A, Vin = high
T = 25°C RON
j
T = 150°C
j
Nominal load current (pin 4 to 1)7)
IL(ISO)
0.7
--
--
A
ISO Standard: VON = Vbb - VOUT = 0.5 V
T = 85 °C
S
Turn-on time
Turn-off time
to 90% VOUT ton
to 10% VOUT toff
--
--
60
60
100
150
µs
RL = 24 Ω
Slew rate on
10 to 30% VOUT, RL = 24 Ω
Slew rate off
dV /dton
-dV/dtoff
--
--
2
2
4
4
V/µs
V/µs
70 to 40% VOUT, RL = 24 Ω
Input
Allowable input voltage range, (pin 3 to 2)
Input turn-on threshold voltage
VIN
-3.0
--
--
--
Vbb
V
V
VIN(T+)
3.5
T = -40...+150°C
j
Input turn-off threshold voltage
VIN(T-)
1.5
--
--
V
T = -40...+150°C
j
Input threshold hysteresis
∆VIN(T)
--
0.5
--
--
V
Off state input current (pin 3)
VIN(off) = 1.2 V IIN(off)
10
60
µA
T = -40...+150°C
j
On state input current (pin 3) VIN(on) = 3.0 V to Vbb IIN(on)
T = -40...+150°C
10
--
100
3.5
µA
j
Input resistance
RIN
1.5
2.8
kΩ
7
)
I
is limited by current limitation, see I
L(SC)
L(ISO)
Page 4
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ISP 452
Parameter and Conditions
Symbol
Values
Unit
at T = 25 °C, V = 13.5V unless otherwise specified
j
bb
min
typ
max
Operating Parameters
8
)
Operating voltage
T =-40...+150°C Vbb(on)
5.0
3.5
--
--
--
--
34
5
V
V
V
j
Undervoltage shutdown
Undervoltage restart
T =-40...+150°C Vbb(under)
j
T =-40...+25°C Vbb(u rst)
6.5
7.0
j
T =+150°C
j
Undervoltage restart of charge pumpe
see diagram page 9
Vbb(ucp)
--
--
5.6
0.3
7
V
V
Undervoltage hysteresis
∆Vbb(under) = Vbb(u rst) - Vbb(under)
∆Vbb(under)
--
Overvoltage shutdown
Overvoltage restart
T =-40...+150°C Vbb(over)
34
33
--
--
--
42
--
V
V
j
T =-40...+150°C Vbb(o rst)
j
Overvoltage hysteresis
T =-40...+150°C ∆Vbb(over)
j
0.7
10
1
--
V
Standby current (pin 4), Vin = low T =-40...+150°C Ibb(off)
--
25
1.6
5
µA
mA
µA
j
Operating current (pin 2), Vin = 5 V
IGND
--
Leakage current (pin 1) Vin = low T =-40...+25°C IL(off)
--
2
j
7
T =150°C
j
8
)
At supply voltage increase up to V = 5.6 V typ without charge pump, V
bb
≈V - 2 V
OUT bb
Page 5
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ISP 452
Parameter and Conditions
Symbol
Values
Unit
at T = 25 °C, V = 13.5V unless otherwise specified
j
bb
min
typ
max
Protection Functions
Current limit (pin 4 to 1)
Vbb = 20V
T = 25°C
T = -40...+150°C
I
0.7
0.7
1.5
--
2
2.4
A
j
L(SC)
j
Overvoltage protection I =4mA T =-40...+150°C Vbb(AZ)
41
41
--
--
--
V
V
j
bb
Output clamp (ind. load switch off)
VON(CL)
47
at VOUT=Vbb-VON(CL), Ibb = 4mA
Thermal overload trip temperature
Thermal hysteresis
Tjt
150
--
--
10
--
--
--
°C
K
∆Tjt
EAS
9
)
Inductive load switch-off energy dissipation
--
0.5
J
Tj, start = 150 °C, single pulse, IL = 0.5 A, Vbb = 12 V
(not tested, specified by design)
Reverse battery (pin 4 to 2) 10
)
-Vbb
--
--
30
V
(not tested, specified by design)
9
)
While demagnetizing load inductance, dissipated energy in PROFET is E
=
V
* i (t) dt, approx.
ON(CL) L
AS
∫
2
V
ON(CL)
1
E
=
/
* L * I * (
)
AS
2
L
V
- V
ON(CL)
bb
10
)
Requires 150 Ω resistor in GND connection. Reverse load current (through intrinsic drain-source diode) has to be limited by the connected
load.
Page 6
2006-03-01
ISP 452
Max. allowable power dissipation
Current limit characteristic
P
= f (T ,T
)
I
= f (V ); (V see terms schematic below)
tot
A SP
L(SC)
on on
P
[W]
I
[A]
tot
L(SC)
2
18
1.8
1.6
1.4
1.2
1
16
14
12
10
8
150°C
TSP
25°C
-40°C
0.8
0.6
0.4
0.2
0
6
4
TA
2
0
0
25
50
75
100
125
150
0
2
4
6
8
10
12
14
T
T
[°C]
V
[V]
A, SP
on
On state resistance (Vbb-pin to OUT-pin)
Typ. input current
R
= f (Tj); V = 13.5 V; I = 0.5 A
I
= f (V ); V = 13.5 V
ON
bb
L
IN
IN bb
R
[Ω]
I
[µA]
ON
IN
50
0.4
0.35
0.3
-40°C
45
40
35
30
25
20
15
10
5
+25°C
98%
0.25
0.2
+150°C
0.15
0.1
0.05
0
0
0
2
4
6
8
10
12
14
-50 -25
0
25
50
75 100 125 150
V
[V]
IN
T [°C]
j
Page 7
2006-03-01
ISP 452
Typ. operating current
Typ. overload current
I
= f (T ); V = 13.5 V; V = high
I
= f (t); V = 13.5 V, no heatsink, Param.: T
GND
j
bb
IN
L(lim) bb jstart
I
[mA]
I
[A]
GND
L(lim)
0.8
1.4
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
1.2
1
0.8
0.6
0.4
0.2
0
+150°C
+25°C
-40°C
-50 -25
0
25
50
75 100 125 150
-50
0
50 100 150 200 250 300 350 400
T [°C]
t [ms]
j
Typ. standby current
Short circuit current
I
= f (T ); V = 13.5 V; V = low
I
= f (T ); V = 13.5 V
bb(off)
j
bb
IN
L(SC)
j
bb
I
[µA]
I
[A]
bb(off)
L(SC)
1.4
8
7
6
5
4
3
2
1
0
1.2
1
0.8
0.6
0.4
0.2
0
-50 -25
0
25
50
75 100 125 150
-50 -25
0
25
50
75 100 125 150
T [°C]
j
T [°C]
j
Page 8
2006-03-01
ISP 452
Typ. input turn on voltage threshold
Figure 6: Undervoltage restart of charge pumpe
V
= f (T );
IN(T+)
j
V
[V]
IN(T+)
3
V
ON
[V]
13V
2.5
2
Vbb(over)
Vbb(o rst)
1.5
1
Vbb(u rst)
Vbb(u cp)
0.5
0
V
bb(under)
-50 -25
0
25
50
75 100 125 150
Vbb [V]
T [°C]
j
charge pump starts at Vbb(ucp), about 5.6 V typ.
Typ. on-state resistance (Vbb-Pin to Out-Pin)
Terms
R
= f (V ,I ; I =0.5A, T = 25°C
ON
bb L) L j
R
[mΩ]
ON
300
250
200
150
100
50
0
0
5
10
15
20
25
V
[V]
bb
Page 9
2006-03-01
ISP 452
Package:
all dimensions in mm.
PG-SOT 223:
Published by
Infineon Technologies AG,
St.-Martin-Strasse 53,
D-81541 München, Germany
© Infineon Technologies AG 2001
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as a guarantee
of characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and conditions and prices please contact your
nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide
(see address list).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the
types in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device
or system. Life support devices or systems are intended to be implanted in the human body, or to support
and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health
of the user or other persons may be endangered.
Page 10
2006-03-01
相关型号：
SP000219835
Smart High-Side Power Switch For Industrial Applications Four Channels: 4 x 90mз
INFINEON
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