SP000219536 [INFINEON]
Smart High-Side Power Switch; 智能高侧电源开关
| 型号： | SP000219536 |
| 厂家： | 
Infineon |
| 描述： | Smart High-Side Power Switch |
| 文件： | 总19页 (文件大小：443K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ITS 4141N
Smart High-Side Power Switch
for Industrial Applications
1 Channel: 1 x 200mΩ
Features
Product Summary
Overvoltage protection
Operating voltage
On-state resistance
Operating temperature
• Short circuit protection
• Current limitation
• Overload protection
• Overvoltage protection
(including load dump)
V
V
R
47
12...45
200
V
V
mΩ
ON
T
-30...+85 °C
a
• Undervoltage shutdown with auto-
restart and hysteresis
• Switching inductive loads
• Clamp of negative voltage at output
with inductive loads
PG-SOT223
• CMOS compatible input
• Thermal shutdown with restart
• ESD - Protection
• Loss of GND and loss of V protection
bb
• Very low standby current
• Reverse battery protection with external resistor
• Improved electromagnetic compatibility (EMC)
Application
• All types of resistive, inductive and capacitive loads
• µC compatible power switch for 12 V and 24 V DC industrial applications
• Replaces electromechanical relays and discrete circuits
General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input,
monolithically integrated in Smart SIPMOS technology.
Providing embedded protective functions.
2006-03-09
Page 1
ITS 4141N
Block Diagram
+ V
bb
4
1
Voltage
source
Gate
Overvoltage
protection
Current
limit
protection
V
Logic
OUT
Limit for
Charge pump
Level shifter
Voltage
sensor
unclamped
ind. loads
Temperature
sensor
Rectifier
R
in
3 IN
Load
Logic
ESD
miniPROFET®
GND
2
Load GND
Signal GND
Pin
1
2
3
4
Symbol
Function
Output to the load
Logic ground
OUT
GND
IN
Input, activates the power switch in case of logic high signal
Positive power supply voltage
Vbb
2006-03-09
Page 2
ITS 4141N
Maximum Ratings
Parameter
Symbol
Value
Unit
at T = 25°C, unless otherwise specified
j
1)
V
Supply voltage
V
V
-0,3 ...48
bb
IN
2)
Continuous input voltage
-10...V
bb
self limited
±5
-0.5
internal limited
A
mA
Load current (Short - circuit current, see page 5) I
L
Current through input pin (DC)
Reverse current through GND-pin
Junction temperature
I
IN
3)
-I
T
T
T
P
E
A
°C
GND
j
Operating temperature
-30...+85
-40 ... +105
1.4
°C
°C
W
J
a
Storage temperature
stg
tot
4)
Power dissipation
4)5)
0.7
Inductive load switch-off energy dissipation
single pulse
AS
T = 125 °C, I = 0.5 A
j
L
5)
6)
V
Load dump protection V
= V + V
V
LoadDump
A
S
Loaddump
R =2Ω, t =400ms, V = low or high, V =13,5V
I
d
IN
A
R = 47 Ω
83
L
kV
Electrostatic discharge voltage (Human Body Model) V
according to ANSI EOS/ESD - S5.1 - 1993
ESD STM5.1 - 1998
ESD
Input pin
All other pins
±1
±5
1
2
3
4
defined by P
tot
At V > Vbb, the input current is not allowed to exceed ±5 mA.
IN
defined by P
tot
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70µm thick) copper area for V
bb
connection. PCB is vertical without blown air.
5
6
not subject to production test, specified by design
is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839 .
V
Loaddump
Supply voltages higher thanV
150Ω resistor in GND connection. A resistor for the protection of the input is integrated.
require an external current limit for the GND pin, e.g. with a
bb(AZ)
2006-03-09
Page 3
ITS 4141N
Unit
Electrical Characteristics
Parameter
Symbol
Values
at T = -40...125 °C, V = 15...30 V unless otherwise specified
min. typ. max.
bb
Thermal Characteristics
-
-
-
-
-
-
125 K/W
70
Thermal resistance @ min. footprint
R
th(JA)
R
th(JA)
2
1)
Thermal resistance @ 6 cm cooling area
Thermal resistance, junction - soldering point
R
7
K/W
thJS
Load Switching Capabilities and Characteristics
On-state resistance
R
mΩ
ON
T = 25 °C, I = 0.5 A
-
-
150
270
-
200
320
-
j
L
T = 125 °C
j
2)
0.7
A
Nominal load current
I
L(nom)
1)
Device on PCB
Turn-on time
to 90% V
t
µs
OUT
on
R = 47 Ω, V = 0 to 10 V
-
-
-
-
50
75
1
100
150
2
L
IN
Turn-off time
to 10% V
t
OUT
off
R = 47 Ω, V = 10 to 0 V
L
IN
Slew rate on 10 to 30% V
,
dV/dt
V/µs
OUT
OUT
on
R = 47 Ω, V = 15 V
L
bb
Slew rate off 70 to 40% V
R = 47 Ω, V = 15 V
,
-dV/dt
off
1
2
L
bb
1
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70µm thick) copper area for V
bb
connection. PCB is vertical without blown air.
2
Nominal load current is limited by the current limitation ( see page 5 )
2006-03-09
Page 4
ITS 4141N
Unit
Electrical Characteristics
Parameter
Symbol
Values
at T = -40...125 °C, V = 15...30 V unless otherwise specified
min. typ. max.
j
bb
Operating Parameters
Operating voltage
Undervoltage shutdown
Undervoltage restart
Undervoltage hysteresis
12
7
-
-
-
-
45
10.5
11
-
V
V
V
V
bb(on)
-
0.5
∆V
bb(under)
∆V
= V
- V
bb(under)
bb(u rst) bb(under)
µA
Standby current
T = -40...85 °C, V ≤ 1,2 V
I
bb(off)
-
-
-
-
10
-
25
50
j
IN
1)
T = 125 °C
j
1
3.5
1.6 mA
10 µA
Operating current
Leakage output current (included in I
I
GND
I
L(off)
)
bb(off)
V
≤ 1,2 V
IN
2)
Protection Functions
Initial peak short circuit current limit
A
I
L(SCp)
T = -40 °C, V = 20 V, t = 150 µs
-
-
-
1.4
-
2.1
-
-
j
bb
m
T = 25 °C
j
T = 125 °C
0.7
j
-
1.1
68
-
-
Repetitive short circuit current limit
T = T (see timing diagrams)
I
L(SCr)
j
jt
62
47
-
-
V
Output clamp (inductive load switch off)
at V = V - V , I = 4 mA
V
V
ON(CL)
bb(AZ)
jt
OUT
bb
ON(CL) bb
3)
Overvoltage protection
= 4 mA
I
bb
4)
135
-
-
10
-
-
°C
K
Thermal overload trip temperature
Thermal hysteresis
T
∆T
jt
1
2
higher current due temperature sensor
Integrated protection functions are designed to prevent IC destruction under fault conditions
described in the data sheet. Fault conditions are considered as "outside" normal operating range.
Protection functions are not designed for continuous repetitive operation.
3
see also V
in circuit diagram
ON(CL)
4
higher operating temperature at normal function available
2006-03-09
Page 5
ITS 4141N
Unit
Electrical Characteristics
Parameter
Symbol
Values
at T = -40...125 °C, V = 15...30 V unless otherwise specified
min. typ. max.
j
bb
Input
1)
2)
-
-
V
Continuous input voltage
V
V
V
-10
V
bb
3.0
IN
-
1.82
-
Input turn-on threshold voltage
Input turn-off threshold voltage
Input threshold hysteresis
Off state input current
-
-
-
0.2
∆V
IN(T)
IN(off)
µA
I
V
≤ 1,8 V
20
-
-
-
-
IN
110
On state input current
I
Input delay time at switch on V
Input resistance (see page 8)
t
R
150
1.5
340
3
-
5
µs
kΩ
bb
I
Reverse Battery
Reverse battery voltage
3)2)
V
-V
bb
R
= 0 Ω
= 150 Ω
-
-
-
-
-
-
0.3
45
1
GND
R
GND
2)
A
V
Continuous reverse drain current
I
S
T = 25 °C
j
-
0.6
1.2
Drain-source diode voltage (V
> V )
-V
ON
OUT
bb
I = 1 A
F
1
At V > Vbb, the input current is not allowed to exceed ±5 mA.
IN
2
3
not subject to production test, guaranted by design
defined by P
tot
2006-03-09
Page 6
ITS 4141N
EMC-Characteristics
All EMC-Characteristics are based on limited number of sampels and no part of production test.
Test Conditions:
If not other specified the test circuitry is the minimal functional configuration without any external
components for protection or filtering.
Supply voltage:
Load:
Operation mode:
V
= 13.5V
Temperature:
T = 23 ±5°C ;
bb
L
a
R = 220Ω
PWM
Frequency:
100Hz / Duty Cycle: 50%
DC On/Off
DUT-Specific.:
R
GND
Fast electrical transients
Acc. ISO 7637
Test Pulse
Test Level
Test Results
Pulse Cycle Time and
Generator Impedance
500ms ; 10Ω
On
Off
1
2
-200 V
+200 V
-200 V
+ 200 V
-7 V
C
C
C
C
500ms ; 10Ω
3a
3b
C
C
C
C
100ms ; 50Ω
100ms ; 50Ω
1)
4
C
C
0,01Ω
5
175 V
400ms ; 2Ω
The test pulses are applied at V
bb
Definition of functional status
Class
Content
C
E
All functions of the device are performed as designed after exposure to disturbance.
One or more function of a device does not perform as designed after exposure
and can not be returned to proper operation without repairing or replacing the
device. The value after the character shows the limit.
Test circuit:
Pulse
Bat.
V
bb
IN
P R O FE T O U T
G N D
R L
R G N D
1
Supply voltage V = 12 V instead of 13,5 V.
bb
2006-03-09
Page 7
ITS 4141N
Conducted Emission
Acc. IEC 61967-4 (1Ω / 150Ω method)
Typ. V -Pin Emission at DC-On with 150Ω-matching network
bb
1 0 0
1 5 0 o h m C la s s 6
9 0
8 0
7 0
6 0
5 0
4 0
3 0
2 0
1 0
0
1 5 0 o h m C la s s 1
V B B , n o is e flo o r
V B B , O N
1 5 0 Ω / 8 -H
1 5 0 Ω / 1 3 -N
-1 0
-2 0
0 ,1
1
1 0
1 0 0
1 0 0 0
f
/
M H z
Typ. V -Pin Emission at PWM-Mode with 150Ω-matching network
bb
1 0 0
1 5 0 o h m C la s s 6
1 5 0 o h m C la s s 1
V B B , n o is e flo o r
9 0
8 0
7 0
6 0
5 0
4 0
3 0
2 0
1 0
0
V B B , P W
M
1 5 0 Ω / 8 -H
1 5 0 Ω / 1 3 - N
- 1 0
- 2 0
0 ,1
1
1 0
1 0 0
1 0 0 0
f / M H z
Test circuit:
150Ω-Network
5µH
V
bb
IN
PROFET OUT
GND
5µH
R
R
GND
For defined decoupling and high reproducibility a defined choke (5µH at 1 MHz)
is inserted between supply andV -pin.
bb
2006-03-09
Page 8
ITS 4141N
Conducted Susceptibility
Acc. 47A/658/CD IEC 62132-4 (Direct Power Injection)
Direct Power Injection:
Failure criteria:
Forward Power CW
Amplitude and frequency deviation max. 10% at Out
Typ. V -Pin Susceptibility at DC-On/Off
bb
4 0
3 5
3 0
2 5
2 0
1 5
L im it
D e v ic e :
B T S 4 1 4 2
4 7 O h m s
L o a d :
V B B , O N
O -M o d e :
O N
/
O F F
/
P W
M
1 0
C o u p lin g P o in t:
M o n ito rin g :
M o d u la tio n :
V B B
O u t
C W
V B B , O F F
5
0
1
1 0
1 0 0
1 0 0 0
f / M H z
Typ. V -Pin Susceptibility at PWM-Mode
bb
4 0
3 5
3 0
2 5
2 0
1 5
1 0
5
L im it
D e v ic e :
B T S 4 1 4 2
4 7 O h m s
L o a d :
V B B , P W
M
O -M o d e :
O N
/
O F F
/
P W
M
C o u p lin g P o in t:
M o n ito rin g :
M o d u la tio n :
V B B
O u t
C W
0
1
1 0
1 0 0
1 0 0 0
f / M H z
Test circuit:
HF
5µH
V
bb
150Ω
PROFET OUT
IN
GND
150Ω
5µH
6,8nF
RGND
R
L
6,8nF
For defined decoupling and high reproducibility the same choke and the same
150Ω -matching network as for the emission measurement is used.
2006-03-09
Page 9
ITS 4141N
Terms
Inductive and overvoltage output clamp
+ V
bb
I
bb
V
Z
V
bb
V
ON
I
I
IN
V
ON
L
IN
OUT
PROFET
OUT
V
IN
GND
I
GND
V
bb
V
GND
OUT
R
GND
VON clamped to 63 V min.
Input circuit (ESD protection)
Overvoltage protection of logic part
V b b
+ V
bb
R
I
IN
V
Z2
IN
I
I
Logic
G N D
G N D
R
The use of ESD zener diodes as voltage clamp
at DC conditions is not recommended
G N D
optiona l
S igna l G N D
VZ2=Vbb(AZ)=47V min.,
RI=3 kΩ typ., RGND=150Ω
Reverse battery protection
V
-
b b
R
I
IN
O U T
P o w e r
In v e r s e
D io d e
L o g ic
G N D
R
G N D
o p tio n a l
R
L
P o w e r G N D
S ig n a l G N D
R
=150Ω, R =3kΩ typ.,
I
GND
Temperature protection is not active during inverse
current
2006-03-09
Page 10
ITS 4141N
GND disconnect
Inductive Load switch-off energy
dissipation
E
bb
V
E
bb
AS
E
Load
IN
OUT
V
bb
PROFET
IN
OUT
PROFET
GND
L
=
E
V
V
L
V
bb
IN
GND
GND
Z
L
{
E
R
R
L
GND disconnect with GND pull up
2
Energy stored in load inductance: E = ½ * L * I
L
While demagnetizing load inductance,
the enérgy dissipated in PROFET is
L
V
bb
E
= E + E - E = V
bb
* i (t) dt,
ON(CL) L
AS
L
R
with an approximate solution for R > 0Ω:
L
IN
OUT
PROFET
GND
I
L
* L
I
L
* R
L
E
A S
=
* (V bb +|V O U T ( C L )| ) * ln(1 +
)
2 * R
L
|V O U T ( C L )|
V
V
V
IN
GND
bb
V
load
disconnect with charged inductive
bb
V
bb
high
IN
OUT
PROFET
GND
V
bb
2006-03-09
Page 11
ITS 4141N
Typ. transient thermal impedance
=f(t ) @ min. footprint
Typ. transient thermal impedance
2
Z
=f(t ) @ 6cm heatsink area
Z
thJA
p
thJA
p
Parameter: D=t /T
Parameter: D=t /T
p
p
10 2
10 2
K/W
K/W
10 1
10 0
10 -1
10 1
10 0
10 -1
D=0,5
D=0,2
D=0,1
D=0,05
D=0,02
D=0,01
D=0
D=0,5
D=0,2
D=0,1
D=0,05
D=0,02
D=0,01
D=0
10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2
10 4
10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1
10 3
s
p
s
p
t
t
Typ. on-state resistance
Typ. on-state resistance
R
= f(T ) ; V = 15 V ; V = high
R
= f(V ); I = 0.5A ; V = high
ON
j
bb
in
ON
bb
L
in
300
300
mΩ
mΩ
125°C
200
150
100
50
200
150
100
50
25°C
-40°C
0
0
-40 -20
0
20 40 60 80 100
140
0
5
10 15 20 25 30 35 40
50
°C
j
V
bb
V
T
2006-03-09
Page 12
ITS 4141N
Typ. turn on time
= f(T ); R = 47Ω
Typ. turn off time
t = f(T ); R = 47Ω
off
t
on
j
L
j
L
100
120
µs
µs
15...30V
15V
30V
80
60
40
20
0
60
40
20
0
-40 -20
0
20 40 60 80 100
140
-40 -20
0
20 40 60 80 100
140
°C
j
°C
T
T
j
Typ. slew rate on
Typ. slew rate off
dV/dt = f(T ) ; R = 47 Ω
dV/dt = f(T ); R = 47 Ω
on
j
L
off
j
L
2
4
V/µs
V/µs
1.6
3
1.4
1.2
1
2.5
30V
15V
2
0.8
0.6
0.4
0.2
0
1.5
1
30V
15V
0.5
0
-40 -20
0
20 40 60 80 100
140
-40 -20
0
20 40 60 80 100
140
°C
j
°C
T
j
T
2006-03-09
Page 13
ITS 4141N
Typ. initial peak short circuit current limit
= f(T ) ; V = 20V; t = 150µs
Typ. initial short circuit shutdown time
I
t
= f(T
) ; V = 20V
L(SCp)
j
bb
m
off(SC)
j,start
bb
2
300
A
ms
1.6
1.4
1.2
1
200
150
100
50
0.8
0.6
0.4
0.2
0
0
-40 -20
0
20 40 60 80 100
140
-40 -20
0
20 40 60 80 100
140
°C
j
°C
T
j
T
Typ. initial peak short circuit current limit
= f(V ); t = 150µs
Typ. input current
= f(T ); V = 15 V; V = low/high
I
I
L(SCp)
bb
m
IN(on/off)
j
bb
= 5V
IN
V
≤ 1,8V; V
INlow
INhigh
2
60
-40°C
25°C
A
µA
1.5
1.25
1
on
off
40
125°C
30
20
10
0
0.75
0.5
0.25
0
0
5
10 15 20 25 30 35 40
50
-40 -20
0
20 40 60 80 100
140
V
°C
j
V
T
bb
2006-03-09
Page 14
ITS 4141N
Typ. input current
I = f(V ); V =15 V
Typ. input threshold voltage
= f(T ) ; V = 15 V
V
IN
IN
bb
IN(th)
j
bb
-40°C
25°C
60
3
on
off
µA
V
40
30
20
10
0
2
125°C
1.5
1
0.5
0
0
2.5
5
7.5
10 12.5 15
20
-40 -20
0
20 40 60 80 100
140
V
°C
j
V
T
IN
Typ. input threshold voltage
= f(V ) ; T = 25°C
Typ. standby current
V
I
= f(T ) ; V = 32V ; V ≤ 1,2 V
IN(th)
bb
j
bb(off)
j bb IN
3
22
µA
V
18
16
14
12
10
8
on
2
off
1.5
1
6
4
0.5
2
0
0
0
10
20
30
50
V
-40 -20
0
20 40 60 80 100
140
°C
j
V
bb
T
2006-03-09
Page 15
ITS 4141N
Maximum allowable inductive switch-off
energy, single pulse
Typ. leakage current
I
= f(T ) ; V = 32V ; V ≤ 1,2 V
L(off)
j bb IN
E
= f(I ); T
= 125°C
AS
L
jstart
2.5
4
µA
J
3
2.5
2
1.5
1
1.5
1
0.5
0.5
0
0
0.2
0.4
0.6
0.8
1
1.4
-40 -20
0
20 40 60 80 100
140
A
°C
j
I
T
L
Typ. input delay time at switch on V
bb
t
= f(V )
d(Vbbon)
bb
400
µs
300
250
200
150
100
50
0
0
5
10 15 20 25 30 35 40
50
V
bb
V
2006-03-09
Page 16
ITS 4141N
Timing diagrams
Figure 1a: Vbb turn on:
Figure 2b: Switching a lamp
IN
IN
V
bb
VOUT
IL
I L
t
t d(Vbbon)
t
Figure 2a: Switching a resistive load,
turn-on/off time and slew rate definition
Figure 2c: Switching an inductive load
IN
IN
VOUT
V
OUT
90%
t on
dV/dton
dV/dtoff
t off
10%
IL
I
L
t
t
2006-03-09
Page 17
ITS 4141N
Figure 3a: Turn on into short circuit,
Figure 3b: Short circuit in on-state
shut down by overtemperature, restart by cooling
IN
shut down by overtemperature, restart by cooling
IN
VOUT
VOUT
normal
Output short to GND
Output short to GND
operation
I
IL
IL
L(SCp)
I
I
L(SCr)
L(SCr)
t
t
Heating up of the chip may require several milliseconds, depending
on external conditions.
Figure 5: Undervoltage shutdown and restart
Figure 4: Overtemperature:
Reset if T < T
j
jt
IN
IN
V
bb
VOUT
10,5V
V
out
TJ
t
t
t
t
d(Vbbon)
d(Vbbon)
2006-03-09
Page 18
ITS 4141N
Package and ordering code
all dimensions in mm
Sales code
Ordering code, standard (1000 pcs.)
ITS 4141N
SP000219536
±0.1
1.6
±0.2
6.5
A
±0.1
0.1 max
3
B
4
+0.2
acc. to
DIN 6784
1
2
3
0.28 ±0.04
2.3
±0.1
0.7
4.6
M
M
0.25
A
0.25
B
GPS05560
Published by
Infineon Technologies AG,
St.-Martin-Strasse 53,
D-81669 München
© Infineon Technologies AG 2001
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as a guarantee
of characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and conditions and prices please contact your
nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide
(see address list).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the
types in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device
or system. Life support devices or systems are intended to be implanted in the human body, or to support
and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health
of the user or other persons may be endangered.
2006-03-09
Page 19
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