SP000219532 [INFINEON]
Smart Four Channel Highside Power Switch for Industrial Applications; 四通道海赛德智能电源开关的工业应用
| 型号： | SP000219532 |
| 厂家： | 
Infineon |
| 描述： | Smart Four Channel Highside Power Switch for Industrial Applications |
| 文件： | 总16页 (文件大小：385K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
®
PROFET ITS711L1
Smart Four Channel Highside Power Switch
for Industrial Applications
Product Summary
Features
Vbb(AZ)
43
V
V
Overvoltage Protection
•
•
•
•
Overload protection
V
5.0 ... 34
bb(on)
Operating voltage
Current limitation
Ta
one
200
1.9
4
-30 … +85 °C
two parallel four parallel
Operating temperature
Short-circuit protection
Thermal shutdown
active channels:
•
Overvoltage protection
On-state resistance RON
100
2.8
4
50
4.4
4
mΩ
A
A
(including load dump)
Nominal load current IL(NOM)
•
•
•
Fast demagnetization of inductive loads
1
)
Reverse battery protection
Current limitation
IL(SCr)
Undervoltage and overvoltage shutdown
with auto-restart and hysteresis
Open drain diagnostic output
PG-DSO-20
•
• Open load detection in ON-state
•
•
CMOS compatible input
Loss of ground and loss of V protection
bb
•
Electrostatic discharge (ESD) protection
Application
•
µC compatible power switch with diagnostic feedback
for 12 V and 24 V DC grounded loads in industrial applications
All types of resistive, inductive and capacitive loads
Replaces electromechanical relays and discrete circuits
•
•
General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic
feedback, monolithically integrated in Smart SIPMOS technology. Providing embedded protective functions.
Pin Definitions and Functions
Pin
1,10,
11,12,
15,16,
19,20
3
Symbol Function
bb
Pin configuration (top view)
V
Positive power supply voltage. Design the
wiring for the simultaneous max. short circuit
currents from channel 1 to 4 and also for low
thermal resistance
V
1 •
2
20 V
19 V
bb
bb
bb
GND1/2
IN1
IN1
Input 1 .. 4, activates channel 1 .. 4 in case of
logic high signal
3
18 OUT1
17 OUT2
5
IN2
ST1/2
IN2
4
7
IN3
IN4
OUT1
OUT2
OUT3
OUT4
ST1/2
5
16 V
15 V
bb
bb
9
GND3/4
IN3
6
18
Output 1 .. 4, protected high-side power output
of channel 1 .. 4. Design the wiring for the
max. short circuit current
7
14 OUT3
13 OUT4
17
ST3/4
IN4
8
14
9
12 V
11 V
bb
bb
13
V
10
bb
4
Diagnostic feedback 1/2 of channel 1 and
channel 2, open drain, low on failure
8
ST3/4
Diagnostic feedback 3/4 of channel 3 and
channel 4, open drain, low on failure
2
6
GND1/2
GND3/4
Ground 1/2 of chip 1 (channel 1 and channel 2)
Ground 3/4 of chip 2 (channel 3 and channel 4)
1)
With external current limit (e.g. resistor R
=150 Ω) in GND connection, resistor in series with ST
GND
connection, reverse load current limited by connected load.
Infineon Technologies AG
1
2006-Mar-23
®
PROFET ITS711L1
Block diagram
Four Channels; Open Load detection in on state;
+ V
bb
Leadframe
Current
limit 1
Gate 1
Voltage
source
Overvoltage
protection
protection
Channel 1
V
Logic
18
OUT1
Limit for
Level shifter
Rectifier 1
Voltage
sensor
unclamped
ind. loads 1
Temperature
sensor 1
3
5
4
IN1
IN2
Open load
Short to Vbb
detection 1
Charge
pump 1
Logic
ESD
ST1/2
Charge
pump 2
Gate 2
protection
Current
limit 2
Channel 2
17
OUT2
Level shifter
Rectifier 2
Limit for
Load
unclamped
ind. loads 2
2
GND1/2
Temperature
sensor 2
Open load
Short to Vbb
detection 2
R
R
O1
GND1/2
O2
Signal GND
Chip 1
Chip 1
Load GND
+ V
bb
Leadframe
Channel 3
14
OUT3
Logic and protection circuit of chip 2
(equivalent to chip 1)
7
9
8
IN3
IN4
ST3/4
Channel 4
OUT4
13
Load
6
GND3/4
PROFET
Chip 2
Leadframe connected to pin 1, 10, 11, 12, 15, 16, 19, 20
R
R
O3
O4
GND3/4
Signal GND
Chip 2
Load GND
Infineon Technologies AG
2
2006-Mar-23
®
PROFET ITS711L1
Maximum Ratings at Tj = 25°C unless otherwise specified
Parameter
Symbol
Values
Unit
Supply voltage (overvoltage protection see page 4)
Supply voltage for full short circuit protection
Vbb
Vbb
43
34
V
V
Tj,start =-40 ...+150°C
Load current (Short-circuit current, see page 5)
IL
self-limited
60
A
V
Load dump protection2) VLoadDump = UA + Vs, UA = 13.5 V VLoad
4)
RI3) = 2 Ω, td = 200 ms; IN= low or high,
dump
each channel loaded with RL = 7.1Ω,
Junction temperature
Tj
Ta
Tstg
+150
-30 ... +85
-40 … +105
°C
W
Operating temperature range
Storage temperature range
Power dissipation (DC)5
(all channels active)
Ta = 25°C: Ptot
Ta = 85°C:
3.6
1.9
Inductive load switch-off energy dissipation, single pulse
Vbb =12V, Tj,start =150°C5),
150
320
800
mJ
IL = 1.9 A, ZL = 66mH, 0Ω
IL = 2.8 A, ZL = 66mH, 0Ω
IL = 4.4 A, ZL = 66mH, 0Ω
see diagrams on page 9 and page 10
one channel: EAS
two parallel channels:
four parallel channels:
Electrostatic discharge capability (ESD)
VESD
1.0
kV
(Human Body Model)
Input voltage (DC)
VIN
IIN
IST
-10 ... +16
±2.0
V
mA
Current through input pin (DC)
Current through status pin (DC)
see internal circuit diagram page 8
±5.0
Thermal resistance
junction - soldering point5),6)
each channel: Rthjs
16 K/W
44
35
junction - ambient5)
one channel active: Rthja
all channels active:
2)
Supply voltages higher than Vbb(AZ) require an external current limit for the GND and status pins, e.g. with a
150 Ω resistor in the GND connection and a 15 kΩ resistor in series with the status pin. A resistor for input
protection is integrated.
3)
4)
5)
R = internal resistance of the load dump test pulse generator
I
VLoad dump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for V
connection. PCB is vertical without blown air. See page 15
bb
6)
Soldering point: upper side of solder edge of device pin 15. See page 15
Infineon Technologies AG
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2006-Mar-23
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PROFET ITS711L1
Electrical Characteristics
Parameter and Conditions, each of the four channels Symbol
Values
Unit
at Tj = 25 °C, V = 12 V unless otherwise specified
bb
min
--
typ
max
Load Switching Capabilities and Characteristics
On-state resistance (V to OUT)
bb
mΩ
IL = 1.8 A
each channel,
Tj = 25°C: RON
Tj = 150°C:
165
320
200
400
two parallel channels, Tj = 25°C:
four parallel channels, Tj = 25°C:
83
42
1.9
2.8
4.4
100
50
--
Nominal load current
one channel active: IL(NOM)
two parallel channels active:
1.7
2.6
4.1
A
four parallel channels active:
Device on PCB5), Ta = 85°C, Tj ≤ 150°C
Output current while GND disconnected or pulled
IL(GNDhigh)
--
--
10
mA
up; V = 30 V, V = 0, see diagram page 9
bb
IN
Turn-on time
to 90% VOUT: ton
80
80
200
200
400
400
µs
Turn-off time
to 10% VOUT: toff
RL = 12 Ω, T =-40...+150°C
j
Slew rate on
dV/dton
0.1
0.1
--
--
1 V/µs
1 V/µs
10 to 30% VOUT, RL = 12 Ω,
T =-40...+150°C:
j
Slew rate off
-dV/dtoff
70 to 40% VOUT, RL = 12 Ω,
T =-40...+150°C:
j
Operating Parameters
Operating voltage7)
Undervoltage shutdown
Undervoltage restart
Tj =-40...+150°C: Vbb(on)
Tj =-40...+150°C: Vbb(under)
Tj =-40...+25°C: Vbb(u rst)
Tj =+150°C:
5.0
3.5
--
--
--
--
34
V
V
V
5.0
5.0
7.0
Undervoltage restart of charge pump
Vbb(ucp)
--
--
5.6
0.2
7.0
V
V
see diagram page 14
Tj =-40...+150°C:
Undervoltage hysteresis
∆Vbb(under)
--
∆Vbb(under) = Vbb(u rst) - Vbb(under)
Overvoltage shutdown
Overvoltage restart
Tj =-40...+150°C: Vbb(over)
Tj =-40...+150°C: Vbb(o rst)
Tj =-40...+150°C: ∆Vbb(over)
Tj =-40...+150°C: Vbb(AZ)
34
33
--
--
--
0.5
47
43
--
--
V
V
V
V
Overvoltage hysteresis
Overvoltage protection8)
42
--
I
bb = 40 mA
7)
8)
At supply voltage increase up to V =5.6V typ without charge pump, V
≈V - 2 V
bb
bb
OUT
see also V
in circuit diagram on page 8.
ON(CL)
Infineon Technologies AG
4
2006-Mar-23
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PROFET ITS711L1
Parameter and Conditions, each of the four channels Symbol
Values
Unit
at Tj = 25 °C, V = 12 V unless otherwise specified
bb
min
typ
max
Standby current, all channels off
VIN = 0
Tj =25°C: Ibb(off)
Tj =150°C:
--
--
--
28
44
--
60
70
12
µA
µA
Leakage output current (included in Ibb(off)
VIN = 0
)
IL(off)
Operating current 9), VIN = 5V, Tj =-40...+150°C
IGND
--
--
2
8
3
mA
I
GND = IGND1/2 + IGND3/4
,
one channel on:
four channels on:
12
Protection Functions10)
Initial peak short circuit current limit, (see timing
diagrams, page 12)
each channel, Tj =-40°C: IL(SCp)
Tj =25°C:
5.5
4.5
2.5
9.5
7.5
4.5
13
11
7
A
Tj =+150°C:
two parallel channels
twice the current of one channel
four parallel channels
four times the current of one channel
Repetitive short circuit current limit,
Tj = Tjt
each channel IL(SCr)
two parallel channels
four parallel channels
--
--
--
4
4
4
--
--
--
A
(see timing diagrams, page 12)
Initial short circuit shutdown time
T
j,start =-40°C: toff(SC)
--
--
5.5
4
--
--
ms
V
T
j,start = 25°C:
(see page 11 and timing diagrams on page 12)
Output clamp (inductive load switch off)11)
VON(CL)
--
47
--
at VON(CL) = Vbb - VOUT
Thermal overload trip temperature
Thermal hysteresis
Tjt
∆Tjt
150
--
--
10
--
--
°C
K
Reverse Battery
Reverse battery voltage 12)
-Vbb
-VON
--
--
--
610
32
-- mV
V
Drain-source diode voltage (V > V
)
out
bb
IL =-1.9A, Tj =+150°C
9)
Add I , if I > 0
ST
ST
10)
Integrated protection functions are designed to prevent IC destruction under fault conditions described in the
data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are
not designed for continuous repetitive operation.
11)
12)
If channels are connected in parallel, output clamp is usually accomplished by the channel with the lowest
V
ON(CL)
Requires a 150 Ω resistor in GND connection. The reverse load current through the intrinsic drain-source
diode has to be limited by the connected load. Note that the power dissipation is higher compared to normal
operating conditions due to the voltage drop across the intrinsic drain-source diode. The temperature
protection is not active during reverse current operation! Input and Status currents have to be limited (see
max. ratings page 3 and circuit page 8).
Infineon Technologies AG
5
2006-Mar-23
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PROFET ITS711L1
Parameter and Conditions, each of the four channels Symbol
Values
Unit
at Tj = 25 °C, V = 12 V unless otherwise specified
bb
min
typ
max
Diagnostic Characteristics
Open load detection current, (on-condition)
10
10
10
--
--
--
200
150
150
mA
each channel, Tj = -40°C: I L (OL)
1
Tj = 25°C:
Tj = 150°C:
twice the current of one channel
two parallel channels
four parallel channels
four times the current of one channel
Open load detection voltage13)
Internal output pull down
Tj =-40..+150°C: VOUT(OL)
2
3
4
V
(OUT to GND), V
=5V
Tj =-40..+150°C: RO
4
10
30
kΩ
OUT
Input and Status Feedback14)
Input resistance
RI
2.5
1.7
1.5
3.5
--
6
3.5
--
kΩ
V
(see circuit page 8)
Tj =-40..+150°C:
Input turn-on threshold voltage
Input turn-off threshold voltage
Input threshold hysteresis
VIN(T+)
Tj =-40..+150°C:
VIN(T-)
--
V
Tj =-40..+150°C:
∆ VIN(T)
VIN = 0.4 V: IIN(off)
--
1
0.5
--
--
50
V
µA
Off state input current
Tj =-40..+150°C:
On state input current
VIN = 5 V: IIN(on)
20
50
90
µA
µs
Tj =-40..+150°C:
Delay time for status with open load after switch
td(ST OL4)
td(ST OL5)
td(ST)
100
320
800
off (other channel in off state)
(see timing diagrams, page 13),
Tj =-40..+150°C:
Delay time for status with open load after switch
--
--
5
20
µs
µs
off (other channel in on state)
(see timing diagrams, page 13),
Tj =-40..+150°C:
Status invalid after positive input slope
(open load)
Status output (open drain)
200
600
Tj =-40..+150°C:
Zener limit voltage Tj =-40...+150°C, IST = +1.6 mA: VST(high)
5.4
--
--
6.1
--
--
--
0.4
0.6
V
ST low voltage
Tj =-40...+25°C, IST = +1.6 mA: VST(low)
Tj = +150°C, IST = +1.6 mA:
13)
14)
External pull up resistor required for open load detection in off state.
If ground resistors R
are used, add the voltage drop across these resistors.
GND
Infineon Technologies AG
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2006-Mar-23
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PROFET ITS711L1
Truth Table
IN1
IN3
IN2
IN4
OUT1
OUT3
OUT2
OUT4
ST1/2
ST3/4
Channel 1 and 2
Chip 1
Chip 2
Channel 3 and 4
(equivalent to channel 1 and 2)
BTS 711L1
Normal operation
L
L
H
H
L
L
H
L
H
X
L
L
H
L
H
X
L
X
H
L
H
X
X
X
L
H
L
L
L
H
H
Z
Z
H
L
H
X
H
H
H
L
H
X
L
L
L
L
L
X
X
L
L
H
L
H
H
H
H
L
H
L
H
15)
Channel 1 (3)
Open load
H(L
)
)
H
X
H
X
H
L
15)
Channel 2 (4)
Channel 1 (3)
L
L
H
L
H
X
L
L
H
L
H
X
X
X
L
H
X
Z
Z
H
L
H
X
H
H
H
L
L
L
X
X
L
L
L
H(L
H
L
16)
Short circuit to V
Overtemperature
bb
L
H
17)
H(L
L
)
)
16)
Channel 2 (4)
both channel
H
17)
H(L
H
L
L
H
L
H
L
H
Channel 1 (3)
Channel 2 (4)
Undervoltage/ Overvoltage
L = "Low" Level
H = "High" Level
X = don't care
Z = high impedance, potential depends on external circuit
Status signal valid after the time delay shown in the timing diagrams
Parallel switching of channel 1 and 2 (also channel 3 and 4) is easily possible by connecting the inputs and
outputs in parallel (see truth table). If switching channel 1 to 4 in parallel, the status outputs ST1/2 and ST3/4
have to be configured as a 'Wired OR' function with a single pull-up resistor.
Terms
I
bb
V
V
ON1
ON3
V
Leadframe
Leadframe
bb
V
V
ON2
ON4
I
I
I
I
IN1
IN2
IN3
IN4
V
V
bb
bb
3
5
7
9
I
I
I
I
IN1
IN3
L1
L3
18
17
14
13
OUT1
OUT2
OUT3
OUT4
PROFET
PROFET
Chip 2
IN2
IN4
L2
L4
Chip 1
I
I
ST3/4
ST1/2
4
8
ST1/2
ST3/4
V
V
V
V
GND1/2
2
GND3/4
6
V
V
IN4
IN1
IN3
IN2
ST1/2
V
ST3/4
V
OUT1
OUT3
V
V
OUT4
I
I
OUT2
GND1/2
GND3/4
R
R
GND1/2
GND3/4
Leadframe (V ) is connected to pin 1,10,11,12,15,16,19,20
bb
GND
External R
optional; two resistors R
,R
=150 Ω or a single resistor R
=75 Ω for
GND1/2
GND3/4
GND
reverse battery protection up to the max. operating voltage.
15)
16)
With additional external pull up resistor
An external short of output to Vbb in the off state causes an internal current from output to ground. If RGND is
used, an offset voltage at the GND and ST pins will occur and the VST low signal may be errorious.
17)
Low resistance to V may be detected by no-load-detection
bb
Infineon Technologies AG
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2006-Mar-23
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PROFET ITS711L1
Input circuit (ESD protection), IN1...4
Overvoltage protection of logic part
GND1/2 or GND3/4
R
+ V
bb
I
IN
V
Z2
R
I
ESD-ZDI
IN
I
I
IN
Logic
GND
ST
R
ST
V
ESD zener diodes are not to be used as voltage clamp at
DC conditions. Operation in this mode may result in a
drift of the zener voltage (increase of up to 1 V).
Z1
GND
R
GND
Status output, ST1/2 or ST3/4
Signal GND
V
= 6.1 V typ., V = 47 V typ., R = 3.5 kΩ typ.,
Z2
Z1
I
+5V
R
= 150 Ω
GND
R
ST(ON)
ST
Reverse battery protection
± 5V
V
bb
-
ESD-
ZD
GND
RST
Logic
RI
IN
ESD-Zener diode: 6.1 V typ., max 5.0 mA;
ST
OUT
R
< 380 Ω at 1.6 mA, ESD zener diodes are not to
ST(ON)
Power
Inverse
Diode
be used as voltage clamp at DC conditions. Operation in
this mode may result in a drift of the zener voltage
(increase of up to 1 V).
GND
RL
R
GND
Inductive and overvoltage output clamp,
OUT1...4
Power GND
Signal GND
R
GND
= 150 Ω, R = 3.5 kΩ typ,
I
+V
bb
Temperature protection is not active during inverse
current operation.
V
Z
V
ON
OUT
PROFET
Power GND
V
ON
clamped to V = 47 V typ.
ON(CL)
Infineon Technologies AG
8
2006-Mar-23
®
PROFET ITS711L1
Open-load detection, OUT1...4
GND disconnect with GND pull up
ON-state diagnostic condition:
(channel 1/2 or 3/4)
V
ON
< R ·I
; IN high
ON L(OL)
+ V
bb
V
bb
IN1
OUT1
OUT2
V
IN1
PROFET
IN2
ST
V
VON
IN2
ON
GND
OUT
Open load
detection
Logic
unit
V
V
GND
ST
V
bb
Any kind of load. If V
> V - V
device stays off
IN(T+)
GND
IN
Due to V
GND
> 0, no V = low signal available.
ST
OFF-state diagnostic condition:
V
OUT
> 3 V typ.; IN low
V
disconnect with energized inductive
bb
load
R
EXT
V
V
bb
IN1
OUT1
OFF
high
PROFET
IN2
ST
OUT
OUT2
GND
Open load
detection
Logic
unit
R
O
V
bb
Signal GND
For an inductive load current up to the limit defined by E
AS
(max. ratings see page 3 and diagram on page 10) each
switch is protected against loss of V
.
bb
GND disconnect
Consider at your PCB layout that in the case of Vbb dis-
connection with energized inductive load the whole load
current flows through the GND connection.
(channel 1/2 or 3/4)
I
bb
V
bb
V
bb
IN1
IN2
ST
OUT1
OUT2
PROFET
GND
V
V
V
V
IN2
IN1
GND
ST
Any kind of load. In case of IN=high is V
≈ V -V .
IN IN(T+)
OUT
Due to V
GND
> 0, no V = low signal available.
ST
Infineon Technologies AG
9
2006-Mar-23
®
PROFET ITS711L1
Inductive load switch-off energy
dissipation
Typ. on-state resistance
R
ON
= f (V ,T ); I = 1.8 A, IN = high
L
bb j
[mOhm]
E
bb
R
ON
E
AS
500
450
400
350
300
250
200
150
100
50
E
E
Load
L
V
bb
IN
OUT
PROFET
L
=
ST
Tj = 150°C
85°C
GND
Z
L
{
E
R
R
L
Energy stored in load inductance:
25°C
2
L
1
E = / ·L·I
L
2
-40°C
While demagnetizing load inductance, the energy
dissipated in PROFET is
E
= Ebb + EL - ER= VON(CL)·i (t) dt,
L
AS
∫
with an approximate solution for R > 0Ω:
L
0
I ·L
L
I ·R
L
L
E
AS
=
(V +|V
|) ln (1+
)
OUT(CL)
0
10
20
30
40
bb
2·R
|V
|
OUT(CL)
L
V
bb
[V]
Typ. open load detection current
Maximum allowable load inductance for
I
= f (V ,T ); IN = high
L(OL)
5)
bb j
a single switch off (one channel)
L = f (I ); T
= 150°C, V = 12 V, R = 0 Ω
L
j,start
bb
L
I
[mA]
L(OL)
L [mH]
1000
140
-40°C
120
100
80
60
40
20
0
25°C
85°C
100
10
Tj = 150°C
0
5
10
15
20
25
30
[V]
1
1
1.5
2
2.5
3
V
bb
I
[A]
L
Infineon Technologies AG
10
2006-Mar-23
®
PROFET ITS711L1
Typ. standby current
I
= f (T ); V = 9...34 V, IN
= low
1...4
bb(off)
j
bb
I
[µA]
bb(off)
60
50
40
30
20
10
0
-50
0
50
100
150
200
T [°C]
j
Typ. initial short circuit shutdown time
t
= f (T
); V =12 V
bb
off(SC)
j,start
[msec]
t
off(SC)
6
5
4
3
2
1
0
-50
0
50
100
150
T
200
[°C]
j,start
Infineon Technologies AG
11
2006-Mar-23
®
PROFET ITS711L1
Timing diagrams
Timing diagrams are shown for chip 1 (channel 1/2). For chip 2 (channel 3/4) the diagrams
are valid too. The channels 1 and 2, respectively 3 and 4, are symmetric and consequently
the diagrams are valid for each channel as well as for permuted channels
Figure 1a: V turn on:
Figure 2b: Switching an inductive load
bb
IN1
IN
IN2
t d(ST)
V
bb
ST
*)
V
OUT1
VOUT
VOUT2
I L
IL(OL)
ST open drain
t
t
*) if the time constant of load is too large, open-load-status may
occur
Figure 2a: Switching a lamp:
Figure 3a: Turn on into short circuit:
shut down by overtemperature, restart by cooling
IN
IN1
other channel: normal operation
ST
IL1
VOUT
I
L(SCp)
I
L(SCr)
IL
t
off(SC)
ST
t
t
The initial peak current should be limited by the lamp and not by
the initial short circuit current IL(SCp) = 7.5 A typ. of the device.
Heating up of the chip may require several milliseconds, depending
on external conditions (t vs. T see page 11)
off(SC)
j,start
Infineon Technologies AG
12
2006-Mar-23
®
PROFET ITS711L1
Figure 5a: Open load: detection in ON-state, open
load occurs in on-state
Figure 3b: Turn on into short circuit:
shut down by overtemperature, restart by cooling
(two parallel switched channels 1 and 2)
IN1
IN1/2
IN2
channel 2: normal operation
I L1+ I
L2
I
L(SCp)
VOUT1
I
channel 1:
L(SCr)
IL1
open
load
open
load
normal
load
t d(ST OL1)
ST
t
t d(ST OL1)
t d(ST OL2)
t d(ST OL2)
t
off(SC)
ST1/2
t
td(ST OL1) = 30 µs typ., td(ST OL2) = 20 µs typ
Figure 5b: Open load: detection in ON-state, turn
Figure 4a: Overtemperature:
on/off to open load
Reset if T <T
j
jt
IN1
IN
IN2
channel 2: normal operation
ST
V
OUT1
VOUT
I L1
channel 1: open load
td(ST OL4) td(ST)
T
J
td(ST)
td(ST OL5)
t
ST
t
The status delay time td(STOL4) allows to distinguish between the
failure modes "open load in ON-state" and "overtemperature".
Infineon Technologies AG
13
2006-Mar-23
®
PROFET ITS711L1
Figure 5c: Open load: detection in ON- and OFF-state
Figure 6b: Undervoltage restart of charge pump
(with R
), turn on/off to open load
EXT
VON(CL)
Von
IN1
IN2
channel 2: normal operation
VOUT1
V bb(over)
IL1
ST
V bb(o rst)
channel 1: open load
Vbb(u rst)
Vbb(u cp)
V
t d(ST)
t d(ST OL5)
bb(under)
td(ST)
Vbb
t
IN = high, normal load conditions.
td(ST OL5) depends on external circuitry because of high
impedance
Charge pump starts at Vbb(ucp) = 5.6V typ.
Figure 6a: Undervoltage:
Figure 7a: Overvoltage:
IN
IN
V
VON(CL)
V
bb(o rst)
V
bb
V
bb(over)
bb
V
V
bb(u cp)
bb(under)
V
bb(u rst)
VOUT
V OUT
ST
ST open drain
t
t
Infineon Technologies AG
14
2006-Mar-23
®
PROFET ITS711L1
Package and Ordering Code
Standard PG-DSO-20-9
Ordering Code
SP000219532
ITS711L1
All dimensions in millimetres
1) Does not include plastic or metal protrusions of 0.15 max per side
2) Does not include dambar protrusion of 0.05 max per side
Definition of soldering point with temperature T :
s
upper side of solder edge of device pin 15.
Pin 15
Printed circuit board (FR4, 1.5mm thick, one layer 70µm, 6cm2 active heatsink area) as a reference for max.
power dissipation P , nominal load current I
and thermal resistance R
thja
tot
L(NOM)
Infineon Technologies AG
15
2006-Mar-23
®
PROFET ITS711L1
Published by
Infineon Technologies AG,
St.-Martin-Strasse 53,
D-81669 München
© Infineon Technologies AG 2006
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as a guarantee of characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and
charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in
Germany or our Infineon Technologies Representatives worldwide (see address list).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the types in question please contact
your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon
Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to
affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body,
or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or
other persons may be endangered.
Infineon Technologies AG
16
2006-Mar-23
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