SP000905376 [INFINEON]
Power Field-Effect Transistor,;
| 型号： | SP000905376 |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor, |
| 文件： | 总20页 (文件大小：3824K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MOSFET
Metal Oxide Semiconductor Field Effect Transistor
CoolMOS™ CFD2 650V
650V CoolMOS™ CFD2 Power Transistor
IPx65R190CFD
Data Sheet
Rev. 2.7
Final
Industrial & Multimarket
650V CoolMOS™ CFD2 Power Transistor
IPW65R190CFD , IPB65R190CFD , IPP65R190CFD
IPA65R190CFD , IPI65R190CFD
TO-247
D²PAK
TO-220
1
Description
CoolMOS™ is a revolutionary technology for high voltage power
MOSFETs, designed according to the superjunction (SJ) principle and
pioneered by Infineon Technologies. 650V CoolMOS™ CFD2 series
combines the experience of the leading SJ MOSFET supplier with high
class innovation. The resulting devices provide all benefits of a fast
switching SJ MOSFET while offering an extremely fast and robust body
diode. This combination of extremely low switching, commutation and
conduction losses together with highest robustness make especially
resonant switching applications more reliable, more efficient, lighter and
cooler.
TO-220 FP
I²PAK
drain
pin 2
Features
• Ultra-fast body diode
gate
pin 1
• Very high commutation ruggedness
• Extremely low losses due to very low FOM Rdson*Qg and Eoss
• Easy to use/drive
• Qualified for industrial grade applications according to JEDEC
(J-STD20 and JESD22)
source
pin 3
• Pb-free plating, Halogen free mold compound
Applications
650V CoolMOS™ CFD2 is especially suitable for resonant switching PWM
stages for e.g. PC Silverbox, LCD TV, Lighting, Server and Telecom.
Table 1 Key Performance Parameters
Parameter
V‡» @ TÎ ÑÈà
RDS(on),max
Qg,typ
Value
700
0.19
68
Unit
V
Â
nC
A
ID,pulse
57.2
5.7
Eoss @ 400V
Body diode di/dt
Qrr
µJ
A/µs
µC
ns
A
900
0.5
trr
120
7.5
Irrm
Type / Ordering Code
IPW65R190CFD
IPB65R190CFD
IPP65R190CFD
IPA65R190CFD
IPI65R190CFD
Package
Marking
65F6190
Related Links
PG-TO 247
PG-TO 263
PG-TO 220
see Appendix A
PG-TO 220 FullPAK
PG-TO 262
Final Data Sheet
Rev. 2.7, 2011-09-26
2
650V CoolMOS™ CFD2 Power Transistor
IPW65R190CFD , IPB65R190CFD , IPP65R190CFD
IPA65R190CFD , IPI65R190CFD
Table of Contents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Final Data Sheet
Rev. 2.7, 2011-09-26
3
650V CoolMOS™ CFD2 Power Transistor
IPW65R190CFD , IPB65R190CFD , IPP65R190CFD
IPA65R190CFD , IPI65R190CFD
2
Maximum ratings
at TÎ = 25°C, unless otherwise specified
Table 2 Maximum ratings
Values
Parameter
Symbol
Unit Note / Test Condition
Min. Typ. Max.
Continuous drain current1)
I ‡
17.5
11.0
57.2
484
A
A
T† = 25°C
T† = 100°C
T† = 25°C
Pulsed drain current2)
I ‡‚ÔÛÐÙþ
Eƒ»
Avalanche energy, single pulse
Avalanche energy, repetitive
Avalanche current, repetitive
MOSFET dv/dt ruggedness
Gate source voltage
mJ I‡ = 3.5A, V‡‡ = 50V
Eƒ¸
0.70 mJ I‡ = 3.5A, V‡‡ = 50V
I ƒ¸
3.5
50
20
30
A
dv/dt
V•»
V/ns V‡» = 0 ... 400V
-20
-30
V
static
AC (f > 1 Hz)
Power dissipation (non FullPAK)
TO-247, TO-220, I²PAK
PÚÓÚ
151.0 W
T† = 25°C
T† = 25°C
Power dissipation (FullPAK)
TO-220 FP
PÚÓÚ
34.0
150
60
W
Operating and storage temperature
T΂TÙÚÃ
-55
°C
Mounting torque (non FullPAK)
TO-247, TO-220, I²PAK
Ncm M3 and M3.5 screws
Ncm M2.5 screws
Mounting torque (FullPAK)
TO-220 FP
50
Continuous diode forward current
Diode pulse current
I »
17.5
57.2
50
A
T† = 25°C
T† = 25°C
I »‚ÔÛÐÙþ
dv/dt
diË/dt
A
Reverse diode dv/dt3)
V/ns
A/µs
V‡» = 0 ... 400V, I»‡ ù I‡,
TÎ = 25°C
Maximum diode commutation speed
900
1) Limited by TÎ ÑÈà.
2) Pulse width tÔ limited by TÎ ÑÈà
3) VÔþÈÏ<Vñ…¸ò‡»», TÎ<TÎ ÑÈà, identical low side and high side switch with same Rg
Final Data Sheet
Rev. 2.7, 2011-09-26
4
650V CoolMOS™ CFD2 Power Transistor
IPW65R190CFD , IPB65R190CFD , IPP65R190CFD
IPA65R190CFD , IPI65R190CFD
3
Thermal characteristics
Table 3 Thermal characteristics TO-247, TO-220, I²PAK
Values
Parameter
Symbol
Unit Note / Test Condition
Min. Typ. Max.
Thermal resistance, junction - case
Thermal resistance, junction - ambient
RÚÌœ†
RÚÌœƒ
0.83 °C/W
62
°C/W leaded
Soldering temperature, wavesoldering only
allowed at leads
1.6 mm (0.063 in.) from case for
10s
TÙÓÐÁ
260
°C
Table 4 Thermal characteristics TO-220 FP
Values
Parameter
Symbol
Unit Note / Test Condition
Min. Typ. Max.
Thermal resistance, junction - case
Thermal resistance, junction - ambient
RÚÌœ†
RÚÌœƒ
3.7
80
°C/W
°C/W leaded
Soldering temperature, wavesoldering only
allowed at leads
1.6 mm (0.063 in.) from case for
10s
TÙÓÐÁ
260
°C
Table 5 Thermal characteristics D²PAK
Values
Parameter
Symbol
Unit Note / Test Condition
Min. Typ. Max.
Thermal resistance, junction - case
RÚÌœ†
RÚÌœƒ
0.83 °C/W
SMD version, device on PCB,
minimal footprint
Thermal resistance, junction - ambient1)
62
°C/W
°C
SMD version, device on PCB,
6cm² cooling area
35
Soldering temperature, wave- &
reflowsoldering allowed
TÙÓÐÁ
260
reflow MSL
1) Device on 40mm*40mm*1.5mm one layer epoxy PCB FR4 with 6cm² copper area (thickness 70µm) for drain connection.
PCB is vertical without air stream cooling.
Final Data Sheet
Rev. 2.7, 2011-09-26
5
650V CoolMOS™ CFD2 Power Transistor
IPW65R190CFD , IPB65R190CFD , IPP65R190CFD
IPA65R190CFD , IPI65R190CFD
4
Electrical characteristics
at TÎ = 25°C, unless otherwise specified
Table 6 Static characteristics
Values
Parameter
Symbol
Unit Note / Test Condition
Min. Typ. Max.
Drain-source breakdown voltage
Gate threshold voltage
Vñ…¸ò‡»» 650
V
V•» = 0V, I‡ = 1mA
V•»ñÚÌò
I ‡»»
3.5
4
4.5
1
V
V‡» = V•», I‡ = 0.7mA
Zero gate voltage drain current
µA
V‡» = 650V, V•» = 0V, TÎ = 25°C
V‡» = 650V, V•» = 0V,
TÎ = 150°C
200
Gate-source leakage current
I •»»
100
nA
Â
V•» = 20V, V‡» = 0V
Drain-source on-state resistance
R‡»ñÓÒò
0.171 0.19
V•» = 10V, I‡ = 7.3A, TÎ = 25°C
V•» = 10V, I‡ = 7.3A, TÎ = 150°C
f = 1MHz, open drain
0.445
1
Gate resistance
R•
Â
Table 7 Dynamic characteristics
Values
Parameter
Symbol
Unit Note / Test Condition
Min. Typ. Max.
Input capacitance
CÍÙÙ
1850
86
pF
pF
V•» = 0V, V‡» = 100V, f = 1MHz
Output capacitance
CÓÙÙ
Effective output capacitance, energy
related1)
CÓñþØò
70
pF
pF
V•» = 0V, V‡» = 0 ... 400V
I‡ = constant, V•» = 0V,
V‡» = 0 ... 400V
Effective output capacitance, time related2) CÓñÚØò
336
Turn-on delay time
Rise time
tÁñÓÒò
tØ
12
ns
ns
ns
ns
V‡‡ = 400V, V•» = 13V,
I‡ = 11.0A, R• = 3.4Â
8.4
53.2
6.4
Turn-off delay time
Fall time
tÁñÓËËò
tË
Table 8 Gate charge characteristics
Values
Parameter
Symbol
Unit Note / Test Condition
Min. Typ. Max.
Gate to source charge
Gate to drain charge
Gate charge total
QÃÙ
12
37
68
6.4
nC
nC
nC
V
V‡‡ = 480V, I‡ = 11A,
V•» = 0 to 10V
QÃÁ
QÃ
Gate plateau voltage
VÔÐÈÚþÈÛ
1) CÓñþØò is a fixed capacitance that gives the same stored energy as CÓÙÙ while V‡» is rising from 0 to 400V
2) CÓñÚØò is a fixed capacitance that gives the same charging time as CÓÙÙ while V‡» is rising from 0 to 400V
Final Data Sheet
Rev. 2.7, 2011-09-26
6
650V CoolMOS™ CFD2 Power Transistor
IPW65R190CFD , IPB65R190CFD , IPP65R190CFD
IPA65R190CFD , IPI65R190CFD
Table 9 Reverse diode characteristics
Values
Parameter
Symbol
Unit Note / Test Condition
Min. Typ. Max.
Diode forward voltage
V»‡
tØØ
0.9
120
0.5
7.6
V
V•» = 0V, IŒ = 11.0A, TÎ = 25°C
Reverse recovery time
ns
µC
A
V¸ = 400V, IŒ = 11.0A,
diŒ/dt = 100A/µs
Reverse recovery charge
Peak reverse recovery current
QØØ
I ØØÑ
Final Data Sheet
Rev. 2.7, 2011-09-26
7
650V CoolMOS™ CFD2 Power Transistor
IPW65R190CFD , IPB65R190CFD , IPP65R190CFD
IPA65R190CFD , IPI65R190CFD
5
Electrical characteristics diagrams
Table 10
Power dissipation (Non FullPAK)
Power dissipation (FullPAK)
160
40
140
120
100
80
30
20
P
P
P
P
PP
PP
60
40
20
0
10
0
0
40
80
120
160
0
40
80
TC [°C]
120
160
T [°C]
T
C
Ptot=f(TC)
Ptot=f(TC)
Table 11
Max. transient thermal impedance (Non FullPAK)
Max. transient thermal impedance (FullPAK)
101
101
0.5
0.5
0.2
0.1
0.2
0.1
0.05
0.05
100
100
0.02
0.02
0.01
0.01
single pulse
single pulse
Z
Z
Z
Z
ZZ
ZZ
10-1
10-1
10-2
10-2
10-5
10-4
10-3
tp [s]
10-2
10-1
10-5
10-4
10-3
10-2
tp [s]
10-1
100
101
ZthJC =f(tP); parameter: D=tp/T
Final Data Sheet
ZthJC =f(tP); parameter: D=tp/T
Rev. 2.7, 2011-09-26
8
650V CoolMOS™ CFD2 Power Transistor
IPW65R190CFD , IPB65R190CFD , IPP65R190CFD
IPA65R190CFD , IPI65R190CFD
Table 12
Safe operating area T†=25°C (Non FullPAK)
Safe operating area T†=25°C (FullPAK)
102
102
1 µs
1 µs
10 µs
10 µs
101
101
100 µs
1 ms
100 µs
1 ms
100
100
10 ms
DC
10 ms
I
I
I
I
II
II
DC
10-1
10-1
10-2
10-2
100
101
102
103
100
101
102
103
VDS [V]
VDS [V]
ID=f(VDS); TC=25 °C; D=0; parameter: tp Vgs>7.5V
ID=f(VDS); TC=25 °C; D=0; parameter: tp Vgs>7.5V
Table 13
Safe operating area T†=80°C (Non FullPAK)
Safe operating area T†=80°C (FullPAK)
102
102
1 µs
1 µs
10 µs
10 µs
101
101
100 µs
100 µs
1 ms
1 ms
100
100
I
I
I
I
II
II
10 ms
DC
10 ms
10-1
10-1
DC
10-2
10-2
100
101
102
103
100
101
102
103
VDS [V]
VDS [V]
ID=f(VDS); TC=80 °C; D=0; parameter: tp Vgs>7.5V
ID=f(VDS); TC=80 °C; D=0; parameter: tp Vgs>7.5V
Final Data Sheet
Rev. 2.7, 2011-09-26
9
650V CoolMOS™ CFD2 Power Transistor
IPW65R190CFD , IPB65R190CFD , IPP65R190CFD
IPA65R190CFD , IPI65R190CFD
Table 14
Typ. output characteristics T†=25°C
Typ. output characteristics T†=125°C
70
45
20 V
20 V
40
35
30
25
20
15
10
5
10 V
10 V
8 V
60
8 V
7 V
7 V
50
6 V
6 V
5.5 V
5.5 V
5 V
40
5 V
I
I
I
I
II
II
4.5 V
4.5 V
30
20
10
0
0
0
5
10
VDS [V]
15
20
0
5
10
VDS [V]
15
20
ID=f(VDS); Tj=25 °C; parameter: VGS
ID=f(VDS); Tj=125 °C; parameter: VGS
Table 15
Typ. drain-source on-state resistance
Drain-source on-state resistance
1.00
0.6
0.90
0.80
0.70
0.60
0.5
0.4
0.3
95%
typ
0.50
5 V 5.5 V 6 V 6.5 V 7 V
10 V
R
R
R
R
RR
RR
0.40
0.30
0.20
0.10
0.00
0.2
0.1
0.0
0
10
20
ID [A]
30
40
-60
-20
20
60
T [°C]
T
j
100
140
180
RDS(on)=f(ID); Tj=125 °C; parameter: VGS
RDS(on)=f(Tj); ID=7.3 A; VGS=10 V
Final Data Sheet
Rev. 2.7, 2011-09-26
10
650V CoolMOS™ CFD2 Power Transistor
IPW65R190CFD , IPB65R190CFD , IPP65R190CFD
IPA65R190CFD , IPI65R190CFD
Table 16
Typ. transfer characteristics
Typ. gate charge
70
10
9
120 V
480 V
60
50
40
8
7
6
5
4
3
2
1
0
25 °C
I
I
I
I
V
V
V
V
30
20
10
0
150 °C
0
2
4
6
8
10
0
20
40
Qgate [nC]
60
80
VGS [V]
ID=f(VGS); |VDS|=20V;
VGS=f(Qgate); ID=11 A pulsed; parameter: VDD
Table 17
Avalanche energy
Drain-source breakdown voltage
600
760
740
720
700
680
660
640
500
400
300
E
E
E
E
V
V
V
V
620
600
580
560
540
200
100
0
0
50
100
150
200
-60
-20
20
60
100
140
180
T [°C]
T
j
T [°C]
j
T
EAS=f(Tj); ID=3.5 A; VDD=50 V
VBR(DSS)=f(Tj); ID=10 mA
Final Data Sheet
Rev. 2.7, 2011-09-26
11
650V CoolMOS™ CFD2 Power Transistor
IPW65R190CFD , IPB65R190CFD , IPP65R190CFD
IPA65R190CFD , IPI65R190CFD
Table 18
Typ. capacitances
Typ. CÓÙÙ stored energy
104
12
10
Ciss
103
8
6
102
C
C
C
C
E
E
E
E
Coss
Crss
4
2
0
101
100
0
100
200
300
VDS [V]
400
500
600
0
100
200
300
VDS [V]
400
500
600
C=f(VDS); VGS=0 V; f=1 MHz
Eoss=f(VDS)
Table 19
Forward characteristics of reverse diode
102
101
125 °C
25 °C
I
I
I
I
100
10-1
0.0
0.5
1.0
1.5
VSD [V]
IF=f(VSD); parameter: Tj
Final Data Sheet
Rev. 2.7, 2011-09-26
12
650V CoolMOS™ CFD2 Power Transistor
IPW65R190CFD , IPB65R190CFD , IPP65R190CFD
IPA65R190CFD , IPI65R190CFD
6
Test Circuits
Table 20 Diode_characteristics
Test circuit for diode characteristics
Diode recovery waveform
ID
RG1
VDS
RG2
RG1 = RG2
Table 21 Switching_times
Switching times test circuit for inductive load
Switching times waveform
VDS
90%
10%
VDS
VGS
VGS
td(off)
tf
td(on)
ton
tr
toff
Table 22 Unclamped_inductive
Unclamped inductive load test circuit
Unclamped inductive waveform
V(BR)DS
VD
ID
VDS
VDS
VDS
ID
Final Data Sheet
Rev. 2.7, 2011-09-26
13
650V CoolMOS™ CFD2 Power Transistor
IPW65R190CFD , IPB65R190CFD , IPP65R190CFD
IPA65R190CFD , IPI65R190CFD
7
Package Outlines
Figure 1 Outline PG-TO 247, dimensions in mm/inches
Final Data Sheet
Rev. 2.7, 2011-09-26
14
650V CoolMOS™ CFD2 Power Transistor
IPW65R190CFD , IPB65R190CFD , IPP65R190CFD
IPA65R190CFD , IPI65R190CFD
Figure 2 Outline PG-TO 263, dimensions in mm/inches
Final Data Sheet
Rev. 2.7, 2011-09-26
15
650V CoolMOS™ CFD2 Power Transistor
IPW65R190CFD , IPB65R190CFD , IPP65R190CFD
IPA65R190CFD , IPI65R190CFD
Figure 3 Outline PG-TO 220, dimensions in mm/inches
Final Data Sheet
Rev. 2.7, 2011-09-26
16
650V CoolMOS™ CFD2 Power Transistor
IPW65R190CFD , IPB65R190CFD , IPP65R190CFD
IPA65R190CFD , IPI65R190CFD
Figure 4 Outline PG-TO 220 FullPAK, dimensions in mm/inches
Final Data Sheet
Rev. 2.7, 2011-09-26
17
650V CoolMOS™ CFD2 Power Transistor
IPW65R190CFD , IPB65R190CFD , IPP65R190CFD
IPA65R190CFD , IPI65R190CFD
Figure 5 Outline PG-TO 262, dimensions in mm/inches
Final Data Sheet
Rev. 2.7, 2011-09-26
18
650V CoolMOS™ CFD2 Power Transistor
IPW65R190CFD , IPB65R190CFD , IPP65R190CFD
IPA65R190CFD , IPI65R190CFD
8
Appendix A
Table 23 Related Links
IFX Design Tools:
•
http://www.infineon.com/cms/en/product/promopages/designtools/index.html
IFX CoolMOS Webpage:
•
http://www.infineon.com/cms/en/product/channel.html?channel=ff80808112ab681d0112ab6a628704d8
Final Data Sheet
Rev. 2.7, 2011-09-26
19
650V CoolMOS™ CFD2 Power Transistor
IPW65R190CFD , IPB65R190CFD , IPP65R190CFD
IPA65R190CFD , IPI65R190CFD
Revision History
IPW65R190CFD , IPB65R190CFD , IPP65R190CFD , IPA65R190CFD , IPI65R190CFD
Revision: 2011-09-26, Rev. 2.7
Previous Revision
Revision Date
Subjects (major changes since last revision)
Release als final datasheet
-
2.0
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2011-05-04
2011-05-05
2011-05-05
2011-05-30
2011-08-29
2011-09-14
2011-09-16
2011-09-26
Release of final datasheet
Update V‡» @ TÎ ÑÈà
update to CFD2 standard
update pin naming
release of new pin naming
update the Igss test condition
We Listen to Your Comments
Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to
continuously improve the quality of this document. Please send your proposal (including a reference to this document) to:
erratum@infineon.com
Edition 2011-08-01
Published by
Infineon Technologies AG
81726 München, Germany
© 2011 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With
respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the
application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including
without limitation, warranties of non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon
Technologies Office (
).
www.infineon.com
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in question,
please contact the nearest Infineon Technologies Office.
The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems and/or
automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies,
if a failure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation and
aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems
are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they
fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Final Data Sheet
Rev. 2.7, 2011-09-26
20
相关型号：
SP000923330
Hall Effect Sensor, 15.9mT Min, 36mT Max, 0-25mA, Rectangular, Surface Mount, SOT-23, SMD-3
INFINEON
©2020 ICPDF网 联系我们和版权申明