SP000917564 [INFINEON]
Small Signal Field-Effect Transistor,;
| 型号： | SP000917564 |
| 厂家： | 
Infineon |
| 描述： | Small Signal Field-Effect Transistor, |
| 文件： | 总8页 (文件大小：142K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BSS84PW
SIPMOS Small-Signal-Transistor
Features
Product Summary
P-Channel
Drain source voltage
V
-60
8
V
A
DS
Enhancement mode
Avalanche rated
Logic Level
Drain-source on-state resistance
Continuous drain current
R
DS(on)
-0.15
I
D
3
dv/dt rated
2
• Qualified according to AEC Q101
1
VSO05561
• Halogen-free according to IEC61249-2-21
Type
Package
Tape and Reel
Marking Pin 1
PIN 2
PIN 3
BSS84PW
PG-SOT-323 H6327:3000pcs/r. YBs
G
S
D
Maximum Ratings,at T = 25 °C, unless otherwise specified
j
Parameter
Symbol
Value
Unit
Continuous drain current
-0.15
A
I
D
T = 25 °C
A
Pulsed drain current
-0.6
I
D puls
T = 25 °C
A
Avalanche energy, single pulse
2.61
mJ
E
E
AS
AR
I = -0.15 A , V = -25 V, R = 25
D
DD
GS
0.03
6
Avalanche energy, periodic limited by T
jmax
Reverse diode dv/dt
dv/dt
kV/µs
I = -0.15 A, V = -48 V, di/dt = 200 A/µs,
S
DS
T
= 150 °C
jmax
Gate source voltage
Power dissipation
V
P
±20
0.3
V
GS
tot
W
T = 25 °C
A
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
-55...+150
55/150/56
°C
T , T
j stg
Rev 1.4
Page 1
2011-07-13
BSS84PW
Thermal Characteristics
Parameter
Symbol
Values
typ.
Unit
min.
max.
Characteristics
Thermal resistance, junction - soldering point
(Pin 3)
-
-
110 K/W
R
thJS
SMD version, device on PCB:
@ min. footprint
R
thJA
-
-
-
-
420
350
2
1)
@ 6 cm cooling area
Electrical Characteristics, at T = 25 °C, unless otherwise specified
j
Parameter
Symbol
Values
typ.
Unit
min.
-60
-1
max.
Static Characteristics
Drain-source breakdown voltage
V
V
-
-
V
(BR)DSS
GS(th)
V
= 0 V, I = -250 µA
D
GS
Gate threshold voltage, V = V
-1.5
-2
GS
DS
I = -20 µA
D
Zero gate voltage drain current
µA
I
DSS
V
V
= -60 V, V = 0 V, T = 25 °C
-
-
-0.1
-10
-1
DS
DS
GS
j
= -60 V, V = 0 V, T = 125 °C
-100
GS
j
Gate-source leakage current
= -20 V, V = 0 V
-
-
-
-
-10
10.5
6.9
-100 nA
I
GSS
V
GS
DS
Drain-source on-state resistance
= -2.7 V, I = -0.01 A
25
12
8
R
DS(on)
V
GS
D
Drain-source on-state resistance
= -4.5 V, I = -0.12 A
R
DS(on)
V
GS
D
Drain-source on-state resistance
4.6
R
DS(on)
V
= -10 V, I = -0.15 A
D
GS
1
2
Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
Rev 1.4
Page 2
2011-07-13
BSS84PW
Electrical Characteristics, at T = 25 °C, unless otherwise specified
j
Parameter
Symbol
Conditions
Values
typ.
Unit
min.
max.
Dynamic Characteristics
Transconductance
g
V
2*I *R ,
DS(on)max
0.08
0.16
-
S
fs
DS
D
I =0.15A
D
Input capacitance
Output capacitance
C
C
V
=0V, V =-25V,
-
-
-
-
-
-
-
15.3
5.8
3
19.1 pF
7.3
iss
oss
rss
d(on)
r
GS
DS
f=1MHz
Reverse transfer capacitance C
3.8
Turn-on delay time
Rise time
t
t
t
t
V
=-30V, V =-4.5V,
6.7
16.2
8.6
20.5
10
ns
DD
GS
I =-0.12A, R =25
24.3
12.9
30.8
D
G
Turn-off delay time
Fall time
d(off)
f
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Q
Q
Q
V
=-48V, I =-0.15A
D
-
-
-
0.25
0.3
1
0.38 nC
0.45
gs
gd
g
DD
Gate charge total
V
V
=-48V, I =-0.15A,
D
1.5
DD
=0 to -10V
GS
Gate plateau voltage
V
=-48V, I =-0.15A
D
-
-3.4
-
V
V(plateau)
DD
Reverse Diode
Inverse diode continuous
forward current
T =25°C
-
-
-
-
-0.15 A
-0.6
I
A
S
Inverse diode direct current,
pulsed
I
SM
Inverse diode forward voltage
Reverse recovery time
Reverse recovery charge
V
=0V, I =-0.15A
-
-
-
-0.84 -1.12 V
V
GS
F
SD
t
V =-30V, I =l ,
23.6
11.6
35.4 ns
17.4 nC
rr
R
F S
di /dt=100A/µs
Q
F
rr
Rev 1.4
Page 3
2011-07-13
BSS84PW
Power Dissipation
Drain current
I = f (T )
P
= f (T )
A
tot
D
A
parameter: V
10 V
GS
BSS84PW
BSS84PW
0.32
-0.16
W
A
0.24
0.20
0.16
0.12
0.08
0.04
0.00
-0.12
-0.10
P
I
-0.08
-0.06
-0.04
-0.02
0.00
0
20
40
60
80 100 120
160
0
20
40
60
80 100 120
160
°C
°C
T
T
A
A
Safe operating area
I = f ( V
Transient thermal impedance
Z = f (t )
thJA
)
D
DS
p
parameter : D = 0 , T = 25 °C
parameter : D = t /T
A
p
BSS84PW
BSS84PW
-10 1
10 3
A
K/W
-10 0
t
= 40.0µs
100 µs
p
10 2
I
I
Z
1 ms
V
-10 -1
10 ms
D = 0.50
0.20
R
10 1
0.10
0.05
-10 -2
0.02
single pulse
0.01
DC
-10 -3
10 0
10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1
-10 -1
-10 0
-10 1
-10 2
DS
10 3
V
s
V
t
p
Rev 1.4
Page 4
2011-07-13
BSS84PW
Typ. output characteristic
I = f (V ); T =25°C
Typ. drain-source-on-resistance
= f (I )
R
D
DS
j
DS(on)
D
parameter: t = 80 µs
parameter: V
p
GS
BSS84PW
BSS84PW
26
-0.36
A
Ptot = 0W
a
b
c
d
f
V
[V]
g
e
GS
a
22
20
18
-2.5
-3.0
-3.5
-4.0
-4.5
-5.0
-6.0
b
c
d
e
f
-0.28
-0.24
-0.20
-0.16
-0.12
-0.08
-0.04
0.00
d
16
I
R
14
12
10
8
g
c
b
6
e
f
g
4
V
[V] =
b
GS
a
c
d
e
f
g
a
2
0
-2.5 -3.0 -3.5 -4.0 -4.5 -5.0 -6.0
0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0
-5.0
0.00 -0.04 -0.08 -0.12 -0.16 -0.20 -0.24
-0.30
V
A
V
I
DS
D
Typ. forward transconductance
Typ. transfer characteristics I = f ( V
)
GS
D
g = f(I ); T =25°C
V
2 x I x R
D DS(on)max
fs
D
j
DS
parameter: g
parameter: t = 80 µs
fs
p
-0.30
0.22
S
A
0.18
0.16
-0.20
0.14
I
g
0.12
0.10
0.08
0.06
0.04
0.02
0.00
-0.15
-0.10
-0.05
0.00
0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0
-5.0
GS
0.00 -0.05 -0.10 -0.15 -0.20 -0.25 -0.30
-0.40
V
A
I
V
D
Rev 1.4
Page 5
2011-07-13
BSS84PW
Drain-source on-resistance
= f(T )
Gate threshold voltage
V = f (T )
GS(th)
R
DS(on)
j
j
parameter: I = -0.17A, V = -10 V
parameter: V = V , I = -20 µA
GS DS D
D
GS
-2.5
16
V
max.
12
10
8
max.
R
V
typ.
-1.5
-1.0
-0.5
0.0
min.
6
typ.
4
2
0
-60
-20
20
60
100
160
-60
-20
20
60
100
180
°C
°C
T
T
j
j
Typ. capacitances
Forward characteristics of reverse diode
I = f (V )
C = f(VDS)
F
SD
Parameter: V =0 V, f=1 MHz
parameter: T , tp = 80 µs
GS
j
BSS84PW
10 2
-10 0
A
pF
-10 -1
Ciss
I
C
10 1
Coss
-10 -2
Crss
Tj = 25 °C typ
Tj = 150 °C typ
Tj = 25 °C (98%)
Tj = 150 °C (98%)
10 0
-10 -3
0.0
0
-5
-10
-15
-20
-30
DS
-0.4 -0.8 -1.2 -1.6 -2.0 -2.4
-3.0
SD
V
V
V
V
Rev 1.4
Page 6
2011-07-13
BSS84PW
Typ. gate charge
= f (Q
Avalanche energy
= f (T )
V
)
Gate
E
GS
AS
j
parameter: I = -0.15 A pulsed
par.: I = -0.15 A , V = -25 V, R = 25
D
D
DD
GS
BSS84PW
3.0
-16
V
mJ
-12
2.0
-10
E
V
V
0,2
DS max
0,8 VDS max
1.5
1.0
0.5
0.0
-8
-6
-4
-2
0
25
45
65
85
105
125
165
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.5
°C
nC
T
Q
j
Gate
Drain-source breakdown voltage
V
= f (T )
(BR)DSS
j
BSS84PW
-72
V
-68
-66
-64
-62
-60
-58
-56
-54
V
-60
-20
20
60
100
180
°C
T
j
Rev 1.4
Page 7
2011-07-13
BSS84PW
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2010 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.
Rev 1.4
Page 3
2011-07-13
相关型号：
SP000923330
Hall Effect Sensor, 15.9mT Min, 36mT Max, 0-25mA, Rectangular, Surface Mount, SOT-23, SMD-3
INFINEON
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