SP000917572 [INFINEON]
Small Signal Field-Effect Transistor,;
| 型号： | SP000917572 |
| 厂家： | 
Infineon |
| 描述： | Small Signal Field-Effect Transistor, |
| 文件： | 总8页 (文件大小：312K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SN7002W
Ò
SIPMOS Small-Signal-Transistor
Feature
Product Summary
V
60
5
V
DS
· N-Channel
· Enhancement mode
· Logic Level
· dv/dt rated
R
W
A
DS(on)
I
0.23
D
PG-SOT-323
Drain
pin 3
Gate
pin1
• Qualified according to AEC Q101
Source
pin 2
• Halogen-free according to IEC61249-2-21
Type
Package
Pb-free
Tape and Reel Information
H6327: 3000 pcs/reel
H6433: 10000 pcs/reel
Marking
sSN
PG-SOT-323
Yes
SN7002W
SN7002W PG-SOT-323
Yes
sSN
Maximum Ratings, at T = 25 °C, unless otherwise specified
j
Parameter
Symbol
Value
Unit
A
Continuous drain current
I
D
T =25°C
0.23
0.18
A
T =70°C
A
0.92
Pulsed drain current
I
D puls
T =25°C
A
6
kV/µs
V
Reverse diode dv/dt
dv/dt
I =0.23A, V =48V, di/dt=200A/µs, T =150°C
jmax
S
DS
Gate source voltage
V
P
±20
0 (<250V)
0.5
GS
ESD class (JESD22-A114-HBM)
Power dissipation
W
tot
T =25°C
A
°C
Operating and storage temperature
T , T
j
-55... +150
55/150/56
stg
IEC climatic category; DIN IEC 68-1
Rev. 2.5
Page 1
2011-07-13
SN7002W
Thermal Characteristics
Parameter
Symbol
Values
Unit
min.
typ. max.
Characteristics
-
-
250 K/W
Thermal resistance, junction - ambient
at minimal footprint
R
thJS
Electrical Characteristics, at T = 25 °C, unless otherwise specified
j
Parameter
Symbol
Values
Unit
min.
60
typ. max.
Static Characteristics
-
-
V
Drain-source breakdown voltage
V
V
(BR)DSS
GS(th)
DSS
V
=0, I =250µA
D
GS
0.8
1.4
1.8
Gate threshold voltage, V = V
GS
DS
I =26µA
D
µA
Zero gate voltage drain current
I
I
V
V
=60V, V =0, T =25°C
-
-
-
-
-
-
0.1
5
DS
DS
GS
j
=60V, V =0, T =150°C
GS
j
10
nA
Gate-source leakage current
GSS
V
=20V, V =0
DS
GS
-
-
4.1
2.3
7.5
5
Drain-source on-state resistance
R
R
W
DS(on)
DS(on)
V
=4.5V, I =0.2A
D
GS
Drain-source on-state resistance
V
=10V, I =0.23A
D
GS
Rev. 2.5
Page 2
2011-07-13
SN7002W
Electrical Characteristics, at T = 25 °C, unless otherwise specified
j
Parameter
Symbol
Conditions
Values
typ. max.
Unit
min.
Dynamic Characteristics
V
³ 2*I *R ,
DS(on)max
0.1
0.21
-
S
Transconductance
g
DS
D
fs
I =0.18A
D
V
=0, V =25V,
-
-
-
-
-
-
-
34
7.2
3
45
pF
Input capacitance
Output capacitance
C
GS
DS
iss
f=1MHz
9.6
4.5
C
oss
rss
Reverse transfer capacitance C
V
=30V, V =10V,
2.4
2.8
6
3.6 ns
4.2
Turn-on delay time
Rise time
t
d(on)
DD
GS
I =0.23A, R =6W
t
D
G
r
9
Turn-off delay time
Fall time
t
d(off)
8.5
12.75
t
f
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
V
=48V, I =0.23A
-
-
-
0.11
0.42
1
0.17 nC
0.63
Q
Q
Q
DD
D
gs
gd
g
V
=48V, I =0.23A,
1.5
DD
D
V
=0 to 10V
GS
V
=48V, I = 0.23 A
-
-
3.4
-
-
V
Gate plateau voltage
V
DD
D
(plateau)
Reverse Diode
T =25°C
0.23 A
0.92
Inverse diode continuous
forward current
I
S
A
-
-
-
-
-
Inv. diode direct current, pulsedI
SM
V
=0, I =0.23A
0.85
10.8
3.2
1.2
V
Inverse diode forward voltage V
GS
F
SD
V =30V, I =l ,
16.2 ns
4.8 nC
Reverse recovery time
t
rr
R
F S
di /dt=100A/µs
Reverse recovery charge
Q
rr
F
Rev. 2.5
Page 3
2011-07-13
SN7002W
1 Power dissipation
2 Drain current
I = f (T )
P
= f (T )
tot
A
D
A
parameter: V ³ 10 V
GS
SN7002W
SN7002W
0.26
0.55
A
W
0.22
0.2
0.45
0.4
0.18
0.16
0.14
0.12
0.1
0.35
0.3
0.25
0.2
0.08
0.06
0.04
0.02
0
0.15
0.1
0.05
0
0
20
40
60
80 100 120
160
0
20
40
60
80 100 120
160
°C
°C
T
T
A
A
3 Safe operating area
I = f ( V
4 Transient thermal impedance
Z = f (t )
thJA
)
D
DS
p
parameter : D = 0 , T = 25 °C
parameter : D = t /T
A
p
10 1
10 3
SN7002W
SN7002W
K/W
A
10 2
t
= 25.0µs
100 µs
1 ms
p
10 0
10 1
10 -1
10 -2
10 -3
10 ms
D = 0.50
0.20
10 0
0.10
0.05
0.02
10 -1
DC
0.01
single pulse
10 -2
10 0
10 1
10 2
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2
10 0
V
s
V
t
p
DS
Rev. 2.5
Page 4
2011-07-13
SN7002W
5 Typ. output characteristic
I = f (V )
6 Typ. drain-source on resistance
= f (I )
R
D
DS
DS(on)
D
parameter: T = 25 °C, V
parameter: Tj = 25 °C, V
GS
j
GS
7.5
0.6
A
3.1V
3.5V
3.7V
4.1V
4.5V
5V
6V
7V
10V
10
7V
6V
W
5V
4.5V
4V
3.7V
3.5V
3.0V
6
5.25
4.5
3.75
3
0.4
0.3
0.2
0.1
0
2.25
1.5
0.75
0
V
A
0
0.5
1
1.5
2
2.5
3
3.5
4
5
0
0.1
0.2
0.3
0.4
0.5
0.7
V
I
DS
D
7 Typ. transfer characteristics
I = f ( V ); V ³ 2 x I x R
8 Typ. forward transconductance
g = f(I )
D
GS
DS
D
DS(on)max
fs
D
parameter: Tj = 25 °C
parameter: Tj = 25 °C
0.5
0.3
S
A
0.2
0.15
0.1
0.3
0.2
0.1
0
0.05
0
V
A
0
0.5
1
1.5
2
2.5
3
3.5
4.5
0
0.1
0.2
0.3
0.4
0.6
V
I
GS
D
Rev. 2.5
Page 5
2011-07-13
SN7002W
(.) Drain-source on-state resistance
= f (T )
10 Typ. gate threshold voltage
V = f (T )
GS(th)
R
DS(on)
j
j
parameter : I = 0.23 A, V = 10 V
parameter: V = V ; I =26µA
GS DS D
D
GS
SN7002W
2.2
V
15
W
98%
1.8
1.6
1.4
1.2
1
12
11
10
9
typ.
2%
8
7
6
98%
0.8
0.6
0.4
0.2
0
5
4
3
typ
2
1
0
°C
°C
-60
-20
20
60
100
180
-60
-20
20
60
100
160
T
T
j
j
11 Typ. capacitances
C = f (V )
12 Forward character. of reverse diode
I = f (V )
DS
F
SD
parameter: V =0, f=1 MHz, Tj = 25 °C
parameter: T
GS
j
10 2
10 0
SN7002W
A
Ciss
pF
10 -1
10 1
Coss
10 -2
Crss
Tj = 25 °C typ
Tj = 150 °C typ
Tj = 25 °C (98%)
Tj = 150 °C (98%)
10 0
10 -3
V
0
5
10
15
20
30
0
0.4
0.8
1.2
1.6
2
2.4
3
V
V
V
SD
DS
Rev. 2.5
Page 6
2011-07-13
SN7002W
13 Typ. gate charge
= f (Q ); parameter: V
14 Drain-source breakdown voltage
V
,
V
= f (T )
GS
G
DS
(BR)DSS
j
I = 0.16 A pulsed, T = 25 °C
D
j
SN7002W
SN7002W
16
V
72
V
68
66
64
62
60
58
56
54
12
10
8
0.2 VDS max
0.5 VDS max
0.8 VDS max
6
4
2
0
nC
0
0.2 0.4 0.6 0.8
1
1.2 1.4
1.7
-60
-20
20
60
100
180
°C
Q
T
j
G
Rev. 2.5
Page 7
2011-07-13
SN7002W
Rev. 2.5
Page 8
2011-07-13
相关型号：
SP000923330
Hall Effect Sensor, 15.9mT Min, 36mT Max, 0-25mA, Rectangular, Surface Mount, SOT-23, SMD-3
INFINEON
SP000978610
Hall Effect Sensor, 2.8mT Min, 10.4mT Max, 0-5mA, Rectangular, Surface Mount, GREEN, PLASTIC, SOT-23, 3 PIN
INFINEON
©2020 ICPDF网 联系我们和版权申明