SP001152004 [INFINEON]
Power Field-Effect Transistor,;型号: | SP001152004 |
厂家: | Infineon |
描述: | Power Field-Effect Transistor, |
文件: | 总9页 (文件大小:321K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
IPZ40N04S5L-2R8
OptiMOS™-5 Power-Transistor
Product Summary
VDS
40
2.8
40
V
RDS(on),max
ID
mW
A
Features
PG-TSDSON-8-33
• OptiMOS™ - power MOSFET for automotive applications
• N-channel - Enhancement mode - Logic Level
• AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green Product (RoHS compliant)
• 100% Avalanche tested
Type
Package
Marking
IPZ40N04S5L-2R8
PG-TSDSON-8-33
5N04L28
Maximum ratings, at T j=25 °C, unless otherwise specified
Value
40
Parameter
Symbol
Conditions
Unit
Continuous drain current1)
I D
T C=25°C, V GS=10V
A
T C=100°C, V GS=10V2)
40
Pulsed drain current2)
I D,pulse
E AS
T C=25°C
160
140
Avalanche energy, single pulse2)
Avalanche current, single pulse
Gate source voltage
I D=20A
mJ
A
I AS
-
40
V GS
-
±16
V
P tot
T C=25°C
Power dissipation
71
W
°C
T j, T stg
Operating and storage temperature
-
-55 ... +175
Rev. 1.1
page 1
2015-07-27
IPZ40N04S5L-2R8
Values
Parameter
Symbol
Conditions
Unit
min.
typ.
max.
Thermal characteristics2)
R thJC
Thermal resistance, junction - case
-
-
-
-
-
2.1
60
K/W
Thermal resistance, junction -
ambient
6 cm2 cooling area3)
R thJA
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
V (BR)DSS V GS=0V, I D= 1mA
V GS(th) V DS=V GS, I D=30µA
Drain-source breakdown voltage
Gate threshold voltage
40
-
-
V
1.2
1.6
2.0
V DS=40V, V GS=0V,
T j=25°C
I DSS
Zero gate voltage drain current
-
-
-
-
1
µA
V DS=40V, V GS=0V,
T j=125°C2)
100
I GSS
V GS=16V, V DS=0V
Gate-source leakage current
-
-
-
-
100 nA
R DS(on) V GS=4.5V, I D=20A
V GS=10V, I D=20A
Drain-source on-state resistance
2.8
2.2
3.8
2.8
mW
Rev. 1.1
page 2
2015-07-27
IPZ40N04S5L-2R8
Values
Parameter
Symbol
Conditions
Unit
min.
typ.
max.
Dynamic characteristics2)
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
C iss
C oss
Crss
t d(on)
t r
-
-
-
-
-
-
-
2080
470
31
4
2800 pF
625
V GS=0V, V DS=25V,
f =1MHz
47
-
-
-
-
ns
3
V DD=20V, V GS=10V,
I D=40A, R G=3.5W
t d(off)
t f
Turn-off delay time
Fall time
20
14
Gate Charge Characteristics2)
Gate to source charge
Gate to drain charge
Gate charge total
Q gs
-
-
-
-
5.4
7.8
39
7.2
11.7
52
nC
Q gd
V DD=32V, I D=40A,
V GS=0 to 10V
Q g
V plateau
Gate plateau voltage
2.6
-
V
A
Reverse Diode
Diode continous forward current2)
Diode pulse current1)
I S
-
-
-
-
40
T C=25°C
I S,pulse
160
V GS=0V, I F=20A,
T j=25°C
V SD
Diode forward voltage
Reverse recovery time1)
Reverse recovery charge1)
-
-
-
0.8
38
32
1.1
V
V R=20V, I F=40A,
di F/dt =100A/µs
t rr
-
-
ns
nC
Q rr
1) Current is limited by package; with an R thJC = 2.1K/W the chip is able to carry 110A at 25°C.
2) The parameter is not subject to production test- verified by design/characterization.
3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 1.1
page 3
2015-07-27
IPZ40N04S5L-2R8
1 Power dissipation
2 Drain current
P tot = f(T C); V GS = 10 V
I D = f(T C); V GS = 10 V
80
60
40
20
0
50
40
30
20
10
0
0
50
100
150
200
0
50
100
150
200
TC [°C]
TC [°C]
3 Safe operating area
4 Max. transient thermal impedance
Z thJC = f(t p)
I D = f(V DS); T C = 25 °C; D = 0
parameter: t p
parameter: D =t p/T
101
1000
100
10
1 µs
100
0.5
10 µs
0.1
100 µs
0.05
10-1
0.01
150 µs
single pulse
10-2
10-3
1
0.1
1
10
100
10-6
10-5
10-4
10-3
10-2
10-1
100
VDS [V]
tp [s]
Rev. 1.1
page 4
2015-07-27
IPZ40N04S5L-2R8
5 Typ. output characteristics
I D = f(V DS); T j = 25 °C
parameter: V GS
6 Typ. drain-source on-state resistance
R DS(on) = f(I D); T j = 25 °C
parameter: V GS
160
12
3 V
2.5 V
2.75 V
10 V
3.5 V
10
8
120
80
40
0
3 V
6
2.75 V
2.5 V
4
3.5 V
10 V
2
0
0
1
2
3
0
40
80
120
160
VDS [V]
ID [A]
7 Typ. transfer characteristics
I D = f(V GS); V DS = 6V
parameter: T j
8 Typ. drain-source on-state resistance
R DS(on) = f(T j); I D = 20 A; V GS = 10 V
160
5
4
3
2
1
120
80
175 °C
25 °C
40
-55 °C
0
1.5
2
2.5
3
3.5
-60
-20
20
60
100
140
180
VGS [V]
Tj [°C]
Rev. 1.1
page 5
2015-07-27
IPZ40N04S5L-2R8
9 Typ. gate threshold voltage
V GS(th) = f(T j); V GS = V DS
parameter: I D
10 Typ. capacitances
C = f(V DS); V GS = 0 V; f = 1 MHz
104
2
Ciss
1.5
300 µA
Coss
103
30 µA
1
Crss
102
0.5
101
0
0
10
20
30
-60
-20
20
60
100
140
180
VDS [V]
Tj [°C]
11 Typical forward diode characteristicis
12 Avalanche characteristics
I A S= f(t AV
IF = f(VSD)
)
parameter: T j
parameter: Tj(start)
103
100
25 °C
102
100 °C
150 °C
10
25 °C
175 °C
101
100
1
1
0
0.2
0.4
0.6
0.8
1
1.2
1.4
10
100
1000
VSD [V]
tAV [µs]
Rev. 1.1
page 6
2015-07-27
IPZ40N04S5L-2R8
13 Avalanche energy
14 Drain-source breakdown voltage
E AS = f(T j)
V BR(DSS) = f(T j); I D = 1 mA
46
300
250
10 A
44
42
40
38
36
200
150
20 A
100
40 A
50
0
-60
-20
20
60
100
140
180
25
75
125
175
Tj [°C]
Tj [°C]
15 Typ. gate charge
16 Gate charge waveforms
V GS = f(Q gate); I D = 40 A pulsed
parameter: V DD
10
9
8
7
6
5
4
3
2
1
0
V GS
8 V
Q g
32 V
V gs(th)
Q g(th)
Q sw
Q gd
Q gate
Q gs
0
10
20
30
40
Qgate [nC]
Rev. 1.1
page 7
2015-07-27
IPZ40N04S5L-2R8
Published by
Infineon Technologies AG
81726 Munich, Germany
© Infineon Technologies AG 2015
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions
or characteristics. With respect to any examples or hints given herein, any typical values stated
herein and/or any information regarding the application of the device, Infineon Technologies hereby
disclaims any and all warranties and liabilities of any kind, including without limitation, warranties
of non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact
the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the
express written approval of Infineon Technologies, if a failure of such components can reasonably be
expected to cause the failure of that life-support device or system or to affect the safety or
effectiveness of that device or system. Life support devices or systems are intended to be implanted
in the human body or to support and/or maintain and sustain and/or protect human life.
If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Rev. 1.1
page 8
2015-07-27
IPZ40N04S5L-2R8
Revision History
Version
Date
Changes
Revision 1.0
Revision 1.1
2015-05-05 Final Data Sheet
2015-07-27 Update of package name
Rev. 1.1
page 9
2015-07-27
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