TLE6284GXT [INFINEON]
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| 型号： | TLE6284GXT |
| 厂家： | 
Infineon |
| 描述： | 暂无描述 外围驱动器 驱动程序和接口 接口集成电路 光电二极管 |
| 文件： | 总17页 (文件大小：298K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Data Sheet TLE6284G
H-Bridge Driver IC
Features
Product Summary
Turn on current
•
Compatible to very low ohmic normal
level input N-Channel MOSFETs
PWM – DIR - Interface
IGxx(on)
IGxx(off)
VVs
850
580
mA
mA
V
Turn off current
•
•
•
Supply voltage range
Gate Voltage
7.5 … 60
10
PWM frequency up to 50kHz
Operates down to 7.5 V
VGS
V
Temperature range
TJ
-40...+150
°C
supply voltage
•
•
•
•
•
•
•
•
•
•
•
•
•
•
Low EMC sensitivity and emission
Adjustable dead time with shoot through protection
Deactivation of dead time and shoot through protection possible
Short circuit protection for each Mosfet can be disabled and adjusted
Driver undervoltage shut down
Reverse polarity protection for the driver IC
Fast disable function / Inhibit for low quiescent current
Input with TTL characteristics
2 bit diagnosis
Thermal overload warning for driver IC
Shoot through protection
PG-DSO-20
Integrated bootstrap diodes
Marking
TLE6284G
Green Product (RoHS compliant)
AEC Qualified
Application
•
•
Dedicated for DC-brush high current motor bridges in PWM control mode for 12, 24 and 42V powernet applica-
tions.
The input structure allows an easy control of a DC-brush motor
General Description
H-bridge driver IC for MOSFET power stages with multiple protection functions. The TLE6184G is very similar to
the TLE6281G. The major difference is that the Short Circuit protection level of the TLE6284G can be adjusted
by external resistors or even disabled. The pin outs are different as well.
Block Diagram
Charge Pump
Linear
BH1
BH2
Regulator
VS
GND
Floating HS Driver 1
+
DH1
GH1
VGS limitation HS1
INH
INH
+
Short circuit
SCD
detect.
+
SH1
Undervoltage
HS1
LS1
HS2
LS2
Floating HS Driver 2
+
PWM
DIR
Input control
Dead time
DH2
GH2
V
GS limitation HS2
+
Level
Shift
Short circuit
SCD
detect.
+
SH2
Undervoltage
DT/DIS
Floating LS Driver 1
+
DL1
GL1
V
GS limitation LS1
+
Undervoltage HSx
Undervoltage LSx
Undervoltage
OR
ER1
ER2
Short circuit
SCD
detect.
+
Short circuit Detect.
Overtemp. warning
Short Circuit Detection
Undervoltage
Floating LS Driver 2
+
DL2
GL2
Tj > 170oC typ.
V
GS limitation LS2
+
Short circuit
SCD
detect.
+
Undervoltage
Data Sheet
1
Rev 2.4 2008-03-18
Data Sheet TLE6284G
Application Block Diagram
Watchdog
TLE
Reset
Q
I
Vs = 12V
4278G
R
D
CQ
47µF
CD
47nF
Cs
47µF
10Ω
Cs
1µF
RQ
47kΩ
RQ
47kΩ
CB
BH1
WD
R
Vcc
Vs
220nF
RSCDH1
ER1
DH1
GH1
ER2
INH
SH1
BH2
RSCDH2
CB
68kΩ
BCR192W
RSCDH3
220nF
DH2
GH2
SH2
DT / DIS
µC
RSCDH4
RINH
RDT
10kΩ
220kΩ
TLE6284G
M
RSCDL1
PWM
DL1
GL1
RSCDL3
DIR
DL2
GL2
RSCDL4
RSCDL2
GND
This application block diagram shows one of the possibilities to use this Driver IC. The volt-
age divider networks accross the 4 MOSFETs (resistors RSCDxx) allow to increase the current
limit threshold for Short Circuit protection. The RSCDLx resistors also provide a charge path for
the bootstrap capacitors. If RSCDLx resistors are not used in the application, a 12k Ohm resis-
tor should be introduced between SH1 to GND and SH2 to GND.
Data Sheet
2
Rev 2.4 2008-03-18
Data Sheet TLE6284G
DT/DIS
ER1
DIR
1
2
20
19
18
17
16
15
14
13
12
11
GL2
SH2
GH2
BH2
DH2
DH1
BH1
GH1
SH1
GL1
3
PWM
DL2
ER2
GND
VS
4
5
TLE6284G
6
7
8
DL1
INH
9
10
Pin
Symbol
Function
1
DT / DIS
a) Set adjustable dead time by external resistor
b) Reset ERx register
c) Disable output stages
2
3
4
5
6
ER1
DIR
PWM
DL2
Error flag for driver shut down
Control input for spinning direction of the motor
Control input for PWM frequency and duty cycle
Sense contact for short circuit detection low side 2
Warning flag Temperature / distinguish if short cir-
cuit or undervoltage lock out occured
ER2
7
8
GND
VS
Logic Ground
Voltage supply
9
10
DL1
INH
Sense contact for short circuit detection low side 1
Sets complete device to sleep mode to achieve low
quiescent currents
11
12
13
14
15
16
17
18
19
20
GL1
SH1
GH1
BH1
DH1
DH2
BH2
GH2
SH2
GL2
Output to gate low side switch 1
Connection to source high side switch 1
Output to gate high side switch 1
Bootstrap supply high side switch 1
Sense contact for short circuit detection high side 1
Sense contact for short circuit detection high side 2
Bootstrap supply high side switch 2
Output to gate high side switch 2
Connection to source high side switch 2
Output to gate low side switch 2
Data Sheet
3
Rev 2.4 2008-03-18
Data Sheet TLE6284G
Maximum Ratings at Tj=-40…+150°C unless specified otherwise
Parameter
Symbol
Limits Values Unit
min
-4
max
60
Supply voltage 1
Operating temperature range
Storage temperature range
VS
Tj
Tstg
V
-40
150
°C
-55
150
Max. voltage range at PWM, DIR, DT/DIS
Max. voltage range at ERx
Max. voltage range at INH
-1
-0.3
-0.6
-0.3
-4
6
6
V
V
V
V
V
V
V
V
V
V
V
W
W
kV
VINH
60
90
75
86
75
12
75
17
11
0.33
0.85
2
Max. voltage range at BHx
VBHx
Max. voltage range at DHx2
VDHx
VGHx
Max. voltage range at GHx3
-7
-7
-2
-7
Max. voltage range at SHx3
VSHx
VGLx
VDLx
VBHx-VSHx
VGxx-VSxx
Ptot
Ptot
VESD
Max. voltage range at GLx
Max. voltage range at DLx
Max. voltage difference BHx – SHx
Max. voltage difference Gxx – Sxx
Power dissipation (DC) @ TA=125°C / min.footprint
Power dissipation (DC) @ TA=85°C / min.footprint
Electrostatic discharge voltage (Human Body Model)
-0.3
-0.3
--
--
--
4
according to MIL STD 883D, method 3015.7 and
EOS/ESD assn. standard S5.1 – 1993
Thermal resistance junction - ambient (minimal foot-
print with thermal vias)
RthJA
RthJA
--
--
75
75
K/W
K/W
Thermal resistance junction - ambient (6 cm2)
Functional range
Parameter and Conditions
Symbol
Values
min max
60
Unit
at Tj = –40…+150 °C, unless otherwise specified
Supply voltage
VS
Tj
7.5
-40
-0.3
-0.3
-0.6
-0.3
-4
V
°C
V
V
V
V
V
V
V
Operating temperature range
Max. voltage range at PWM, DIR, DT/DIS
Max. voltage range at ERx
Max. voltage range at INH
Max. voltage range at BHx
Max. voltage range at DHx2
Max. voltage range at GHx3
Max. voltage range at SHx3
150
5.5
5.5
60
VINH
VBHx
VDHx
VGHx
VSHx
90
75
86
-7
-7
75
1 With external resistor (≥10 Ω ) and capacitor
2 The min value -4V is reduced to –( VBHx - VSHx) in case of bootstrap voltages VBHx-VSHx <4V
3 The min value -7V is reduced to –(VBHx - VSHx - 1V) in case of bootstrap voltages VBHx-VSHx <8V
4 All test involving Gxx pins VESD=1 kV!
Data Sheet
4
Rev 2.4 2008-03-18
Data Sheet TLE6284G
Max. voltage range at DLx3
Max. voltage range at GLx
Max. voltage difference BHx - SHx
Max. voltage difference GHx – SHx
PWM frequency
VDLx
-7
-2
75
12
12
11
50
2
V
V
V
VGLx
VBHx-VSHx
VGxx-VSxx
FPWM
-0.3
-0.3
0
V
kHz
µs
Minimum on time external lowside switch – static con-
tp(min)
--
dition @ 20 kHz; QGate = 200nC
Electrical Characteristics
Parameter and Conditions
Symbol
Values
Unit
at Tj = -40…150°C, unless otherwise specified
min
typ
max
and supply voltage range VS = 7.5 … 60V; fPWM = 20kHz
Static Characteristics
Low level output voltage (VGSxx) @ I=10mA
∆VLL
∆VHL
--
8
60
10
150 mV
High level output voltage (VGSxx) @ I=-10mA;
11
V
Vs≥11.5V
High level output voltage (VGSxx) @ I=-10mA;
∆VHL
-- Vs-1.5
--
V
Vs<11.5V
Supply current at VS (device disabled)
@ Vbat= VS =42V RDT=400kΩ
IVS(dis)42V
--
--
4
8
mA
Quiescent current at VS (device inhibited)
@ Vbat= VS =14V RDT=400kΩ
IVS(inh)14V
0.6
1.5 mA
RSCDL1+RSCDL2 = RSCDL3+RSCDL4 =12kΩ
Quiescent current at VS (device inhibited)
@ Vbat= VS =42V RDT=400kΩ
IVS(inh)42V
--
0.6
1.5 mA
RSCDL1+RSCDL2 = RSCDL3+RSCDL4 =12kΩ
Supply current at VS @ Vbat= VS =14V,
IVS(open)14V
IVS(open)14V
IVS(open)42V
--
--
--
7
7
7
15 mA
15 mA
15 mA
fPWM = 20kHz (Outputs open)
Supply current at VS @ Vbat= VS =14V,
fPWM = 50kHz (Outputs open)
Supply current at VS @ Vbat= VS =42V,
fPWM = 20kHz (Outputs open)
Low level input voltage
High level input voltage
Input hysteresis
VIN(LL)
VIN(HL)
∆VIN
--
2.0
100
1.3
--
--
170
2
1.0
--
V
V
-- mV
Inhibit trip level
VINH
3
V
Data Sheet
5
Rev 2.4 2008-03-18
Data Sheet TLE6284G
Dynamic characteristics (pls. see test circuit and timing diagram)
Turn on current @ VGxx –VSxx = 0V; Tj=25°C
@ VGxx –VSxx = 4V; Tj=125°C
@ CLoad=22nF ; Rload= 0Ω
Turn off current @ VGxx –VSxx = 10V; Tj=25°C
@ VGxx –VSxx = 4V; Tj=125°C
@ CLoad= 22nF ; Rload=0Ω
Dead time (adjustable) @ RDT = 1 kΩ
@ RDT = 10 kΩ
IGxx(on)
IGxx(off)
tDT
--
--
850
700
-- mA
--
--
--
580
300
-- mA
--
--
0.05
0.40
--
0.01
--
µs
0.20 0.38
1.0 2.50
@ RDT = 50 kΩ
3.1
--
@ RDT = 200 kΩ
@ CLoad=10nF ; Rload=1Ω
Rise time @ CLoad=10nF ; Rload=1Ω (20% to
t rise
tfall
--
--
100
150
5
300
440
7
ns
ns
µs
80%)
Fall time @ CLoad=10nF ; Rload=1Ω (80% to
20%)
Disable propagation time
@ CLoad=10nF ; Rload=1Ω
tP(DIS)
3.6
Reset time of diagnosis
tP(CL)
tP(ILN)
tP(ILF)
tP(IHN)
tP(IHF)
tP(Diff)
tP(Diff)
tP(Diff)
tP(Diff)
tP(Diff)
tP(Diff)
1
--
2
250
110
200
130
50
3.1
500
500
500
500
70
µs
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
@ CLoad=10nF ; Rload=1Ω
Input propagation time
(low side turns on, 0% to 10%)
Input propagation time
(low side turns off, 100% to 90%)
Input propagation time
(high side turns on, 0% to 10%)
Input propagation time
(high side turns off, 100% to 90%)
Input propagation time difference
(all channels turn on)
Input propagation time difference
(all channels turn off)
Input propagation time difference
(one channel; low on – high off)
Input propagation time difference
(one channel; high on – low off)
Input propagation time difference
(all channels; low on – high off)
Input propagation time difference
(all channels; high on – low off)
--
--
--
20
--
25
50
--
120
100
120
100
180
180
180
180
--
--
--
Data Sheet
6
Rev 2.4 2008-03-18
Data Sheet TLE6284G
Test Circuit and Timing Diagram
PWM
x2
GHx
PWM
Rload = 1 Ohm
50%
VGHX_C
Cload = 10 nF
SHx
GLx
t
tP(IHN) trise
tP(IHF) tfall
Rload = 1 Ohm
VGHX_C
90%
80%
VGLX_C
C
load = 10 nF
SLx
20%
10%
t
tP(ILF) tfall
tP(ILN) trise
VGLX_C
90%
80%
Test Conditions :
Junction temperature Tj = -40 … 150oC
Supply voltage range Vs = 7.5 … 60V
PWM frequency fPWM = 20 kHz
20%
10%
t
Diagnosis and Protection Functions
Parameter and Conditions
Symbol
Values
Unit
at Tj = -40…150°C, unless otherwise specified
min
typ
max
and supply voltage range VS = 7.5 … 60V; fPWM = 20kHz
Overtemperature warning
Hysteresis for overtemperature warning
Short circuit protection filter time
Short circuit criteria (VDS of Mosfets)
For Low sides
TJ(OV)
150
--
170
20
9
190
--
12
°C
°C
µs
∆TJ(OV)
tSCP(off)
VDS(SCP)
6
0.5 0.75
0.45 0.75 1.05
1.0
V
For High sides
Disable input level
Disable input hysteresis
Error level @ 1.6mA IERx
VDIS
∆VDIS
VERx
3.3
--
--
3.7
180
--
4.0
--
1.0
4.6
V
mV
V
Under voltage lock out for highside output – boot- VBHx (uvlo)
--
3.7
V
strap voltage
Under voltage lock out for lowside output –
supply voltage
VVs (uvlo)
--
4.8
5.9
V
Data Sheet
7
Rev 2.4 2008-03-18
Data Sheet TLE6284G
Remarks:
Default status of input pins:
To assure a defined status of the logic input pins in case of disconnection, these pins are
internally secured by pull up / pull down current sources with approx. 20µA. The high voltage
proof input INH should be secured by an external pull down resistor close to the device. The
following table shows the default status of the logic input pins.
Input pin
PWM and DIR
Default status
Low (= break in high side)
DT/DIS (active high)
High
Definition:
In this datasheet a duty cycle of 98% means that the GLx pin is 2% of the PWM period in
high condition.
Remark: Please consider the influence of the dead time and the propagation time differ-
ences for the input duty cycle
Functional description
Description of Dead Time Pin / Disable Pin / Reset
This pin allows to adjust the internal generated dead time. The dead time protects the exter-
nal highside and lowside Mosfets in the same halfbridge against a lowohmic connection be-
tween battery and GND and the resulting cross current through these Mosfets. The adjust-
able dead time allows to minimize the power dissipation caused by the current flowing
through the body diode during switching the halfbridge.
In addition this pin allows to reset the diagnosis registers without shut down of any output
stage as well as the possibility to shut down all outputs simultaneously.
Condition of DT/DIS pin
Function
0 - 3.5V
> 4V
Adjust dead time between 10ns and 3.1µs
a) Reset of diagnosis register if DT/DIS voltage is higher than
4V for a time between 3.1µs and 3.6µs
b) Shut down of output stages if DT/DIS voltage is higher
than 4V for a time above 7µs (Active pull down of gate volt-
age)
Description of Inhibit functionality
In automotive applications which are permanently connected to the battery line, it is very im-
portant to reduce the current consumption of the single devices. Therefore the TLE6284G
offers an inhibit mode to put the device to sleep and assure very low quiescent currents. To
deactivate the inhibit mode the INH pin has to be set to high. This can be done by connect-
ing this pin to voltages between 3.3 and 60V without external protection. An inhibit mode
means a complete reinitialisation of the device.
Description of Diagnosis
The two ERx pins are open collector outputs and have to be pulled up with external pull up
resistors to 5V. In normal conditions both ERx signals are high. In case of shutdown of any
Data Sheet
8
Rev 2.4 2008-03-18
Data Sheet TLE6284G
output stage the ER1 is pulled down. This shut down can be caused by undervoltage or
short circuit. In this condition ER2 indicates the reason for the shut down.
Condition of
Condition of
Function
ER1 pin
5V
ER2 pin
5V
no errors
5V
0V
overtemperature warning of driver IC
Shut down of any output stage caused by short circuit
0V
5V
0V
0V
Shut down of any output stage caused by undervoltage
Recommended Start-up procedure
The following procedure is recommended whenever the Driver IC is powered up:
• Disable the Driver IC via DT/DIS pin
• Wait until the bootstrap capacitors of High Side MOSFET CBx are charged (the waiting
time depends on application conditions, e.g. CBx and RBx)
• Enable the Driver IC via DT/DIS pin
• Start the operation by applying the desired pulse patterns. Do not apply any pulse pat-
terns to the PWM or DIR pin, before the CBx capacitors are charged up.
Short Circuit protection
The current threshold limit to activate the Short Circuit protection function can be adjusted to
larger values, it can not be adjusted to lower values. This can be done by external resistors
to form voltage dividers across the “sense element” (pls. see Application block diagram on
pg. 2), consisting of the Drain-Source-Terminals, a fraction of the PCB trace and – in some
cases – current sense resistors (used by the µC not by the Driver IC).
The Short Circuit protection can be disabled for the High Side MOSFETs by shorting DH1
with SH1 and DH2 with SH2 on the PCB; in this case the DHx pins may not be connected to
the Drains of the associated MOSFETs. To disable Short Circuit protection for the Low Side
MOSFETs the DL1 and DL2 pin should be connected to the Driver IC´s Ground.
Shut down of the driver
A shut down can be caused by undervoltage or short circuit.
A short circuit will shut down only the affected Mosfet until a reset of the error register by a
disable of the driver occurs. A shut down due to short circuit will occur only when the Short
Circuit criteria VDS(SCP) is met for a duration equal to or longer than the Short Circuit filter time
tSCP(off). Yet, the exposure to or above VDS(SCP) is not counted or accumulated. Hence, repeti-
tive Short Circuit conditions shorter than tscp(off) will not result in a shut down of the affected
MOSFET.
An undervoltage shut down shuts only the affected output down. The affected output will
auto restart after the undervoltage situation is over.
Operation at Vs<12V
If Vs<11.5V the gate voltage will not reach 10V. It will reach approx Vs-1.5V, dependent on
duty cyle, bootstrap capacitor, total gate charge of the external Mosfet and switching fre-
quency.
Data Sheet
9
Rev 2.4 2008-03-18
Data Sheet TLE6284G
Operation at different voltages for Vs, DH1 and DH2
If DH1 and DH2 are used with a voltage higher than Vs, a duty cycle of 100% can not be
guaranteed. In this case the driver is acting like a normal driver IC based on the bootstrap
principle. This means that after a maximum “On” time of the highside switch of more than
1ms a refresh pulse to charge the bootstrap capacitor of about 1µs is needed to avoid un-
dervoltage lock out of this output stage.
Operation at extreme duty cycle:
The integrated charge pump allows an operation at 100% duty cycle. The charge pump is
strong enough to replace leakage currents during “on”-phase of the highside switch. The
gate charge for fast switching of the highside switches is supplied by the bootstrap capaci-
tors. This means, that the bootstrap capacitor needs a minimum charging time of about 1µs,
if the highside switch is operated in PWM mode (e.g. with 20kHz a maximum duty cycle of
96% can be reached). The exact value for the upper limit is given by the RC time formed by
the impedance of the internal bootstrap diode and the capacitor formed by the external Mos-
fet (CMosfet=QGate / VGS). The size of the bootstrap capacitor has to be adapted to the external
MOSFET the driver IC has to drive. Usually the bootstrap capacitor is about 10-20 times big-
ger than CMosfet. External components at the Vs Pin have to be considered, too.
The charge pump is active when the highside switch is “ON” and the voltage level at the SHx
is higher than 4V. Only under these conditions the bootstrap capacitor is charged by the
charge pump.
Data Sheet
10
Rev 2.4 2008-03-18
Data Sheet TLE6284G
Estimation of power loss within the Driver IC
The power loss within the Driver IC is strongly dependent on the use of the driver and the
external components. Nevertheless a rough estimation of the worst case power loss is pos-
sible. Worst case calculation is:
PLoss = (Qgate*n*const* fPWM + IVS(open))* VVs - PRGate
With:
PLoss = Power loss within the Driver IC
fPWM = Switching freqency
Qgate = Total gate charge of used MOSFETs at 10V VGS
n
= Number of switched MOSFETs
const = Constant considering some leakage current in the driver (about 1.2)
IVS(open) = Current consumption of driver without connected Mosfets during switching
VVS = Voltage at Vs
PRGate = Power dissipation in the external gate resistors
This value can be reduced dramatically by usage of external gate resistors.
Estimated Power Loss PLOSS within the Driver IC
for different supply voltages Vs
Estimated Power Loss PLOSS within the Driver IC
for different gate charges QG
at QG = 100nC @ VGS = 10V
at supply voltage Vs = 14V
0,8
0,7
0,6
0,5
0,4
0,3
0,2
0,1
0
0,8
0,7
0,6
0,5
0,4
0,3
0,2
0,1
0
QG = 50nC
QG = 100nC
QG = 200nC
Vs = 8V
Vs = 14V
Vs = 18V
0
10
20
30
40
50
60
0
10
20
30
40
50
60
PWM Frequency (kHz)
PWM Frequency (kHz)
Conditions :
Junction temperature Tj = 25oC
Number of switched MOSFET n = 2
Power dissipation in the external gate resistors PRGate = 0,2*PLoss
Data Sheet
11
Rev 2.4 2008-03-18
Data Sheet TLE6284G
Gate Drive characteristics
VPWM_HS
iGxx(on)
iGxx(off)
iGHx
BHx
Vs
Logic
+
850 mA Peak
Level
DHx
GHx
SCD
Shift
+
CB
iGxx(on)
VGS
limit
+
iGxx(off)
iGHx
VPWM_HS
580 mA Peak
Under
voltage
Motor
SHx
TLE6284G
High Side Driver
Test Conditions :
- Turn On : VGS = 0V, Tj = 25oC
- Turn Off : VGS = 10V, Tj = 25oC
This figure represents the simplified internal
circuit of one high side gate drive. The drive
circuit of the low sides look similar.
This figure illustrates typical voltage and
current waveforms of the high side gate drive;
the associated waveforms of the low side
drives look similar.
Data Sheet
12
Rev 2.4 2008-03-18
Data Sheet TLE6284G
Truth Table
Input
DIR PWM DT / DIS UV OT SC GH GL GH GL ER ER
Conditions
Output driver IC
Output
Bridge
Out1 Out2
1
1
2
2
1
2
0
0
1
1
<3.5V
<3.5V
<3.5V
<3.5V
0
0
0
0
0
0
0
0
0
0
0
0
1
1
0
1
0
0
1
0
0
1
1
1
1
0
0
0
1
0
1
0
5V 5V
5V 5V
5V 5V
5V 5V
1
0
1
1
1
0 A
1 A
1 A
1 A
1
0
1
1 A
1 A
0 A
1 A
0
0
1
1
<3.5V
<3.5V
<3.5V
<3.5V
1
1
1
1
0
0
0
0
0
0
0
0
B
B
0
0
0
B
0
0
B
0
0
0
1
0
1
0
C
C
C
C
D
D
D
D
B
B
B
B
0
0
1
1
<3.5V
<3.5V
<3.5V
<3.5V
0
0
0
0
1
1
1
1
0
0
0
0
1
1
0
1
0
0
1
0
0
1
1
1
1
0
0
0
1
0
1
0
5V 0V
5V 0V
5V 0V
5V 0V
1
1
0
1
1 A
1 A
0 A
1 A
0
1
1
1
0 A
1 A
1 A
1 A
0
0
1
1
<3.5V
<3.5V
<3.5V
<3.5V
0
0
0
0
0
0
0
0
1
1
1
1
E
E
0
0
0
E
0
0
E
0
0
0
1
0
1
0
F
F
F
F
5V
5V
5V
5V
E
E
E
E
X
X
X
>4V
X
X
X
X
X
X
0
0
0
0
0
0
0
0
X
X
5V 5V
5V 5V
T
T
T
T
A) Tristate when affected by undervoltage shut down or short circuit
B) 0 when affected; 1 when not affected; self recovery
C) 0V when output does not correspond to input patterns; 5V when output corresponds to
input patterns
D) Is an output affected by undervoltage ER2 is 0V
E) 0 when affected– the outputs of the affected halfbridge are shut down and stay latched
until reset; 1 when not affected
F) 0V when output does not correspond to input patterns – the outputs of the affected half-
bridge are shut down and stay latched until reset; 5V when output corresponds to input
patterns.
T) Tristate
X) Condition has no influence
Remark: To generate fast decay control mode, set PWM to 1 and send pwm-pattern to DIR
input.
Data Sheet
13
Rev 2.4 2008-03-18
Data Sheet TLE6284G
Data Sheet
14
Rev 2.4 2008-03-18
Data Sheet TLE6284G
Package Outlines
(all dimensions in mm)5
Package
PG-DSO-20-45
Green Product (RoHS compliant)
To meet the world-wide customer requirements for environmentally friendly products and to be compliant with
government regulations the device is available as a green product. Green products are RoHS-Compliant (i.e
Pb-free finish on leads and suitable for Pb-free soldering according to IPC/JEDEC J-STD-020).
5 More information about packages can be found at our internet page http://www.infineon.com/packages
Data Sheet
15
Rev 2.4 2008-03-18
Data Sheet TLE6284G
TLE6284G
Revision History:
2008-03-18
Rev. 2.4
Previous Version: 2.3
Green Revision derived from TLE6282G
Page
1
Subjects (major changes since last revision)
AEC Qualified and RoHS compliant logos and features added.
Package picture updated.
Marking code added.
23
25
Package outline updated.
Paragraph RoHS complaint added.
Legal disclaimer updated.
Data Sheet
16
Rev 2.4 2008-03-18
Data Sheet TLE6284G
Edition 2008-03-18
Published by
Infineon Technologies AG
81726 Munich, Germany
© 4/1/08 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or character-
istics. With respect to any examples or hints given herein, any typical values stated herein and/or any information
regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabili-
ties of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any
third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest In-
fineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the fail-
ure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life
support devices or systems are intended to be implanted in the human body or to support and/or maintain and
sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other per-
sons may be endangered.
Data Sheet
17
Rev 2.4 2008-03-18
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