HGTP1N120BND [INTERSIL]
5.3A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode; 5.3A ， 1200V ，不扩散核武器条约系列N沟道IGBT与反并联二极管超高速
| 型号： | HGTP1N120BND |
| 厂家： | 
Intersil |
| 描述： | 5.3A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode |
| 文件： | 总7页 (文件大小：78K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HGTP1N120BND, HGT1S1N120BNDS
Data Sheet
January 2000
File Number 4650.2
5.3A, 1200V, NPT Series N-Channel IGBT
with Anti-Parallel Hyperfast Diode
Features
o
• 5.3A, 1200V, T = 25 C
C
The HGTP1N120BND and the HGT1S1N120BNDS are
Non-Punch Through (NPT) IGBT designs. They are new
members of the MOS gated high voltage switching IGBT
family. IGBTs combine the best features of MOSFETs and
bipolar transistors. This device has the high input impedance
of a MOSFET and the low on-state conduction loss of a
bipolar transistor.
• 1200V Switching SOA Capability
• Typical E . . . . . . . . . . . . . . . . . . . 120µJ at T = 150 C
o
OFF
J
• Short Circuit Rating
• Low Conduction Loss
• Temperature Compensating SABER™ Model
Thermal Impedance SPICE Model www.intersil.com/
The IGBT is development type number TA49316. The diode
used in anti-parallel with the IGBT is the RHRD4120
(TA49056).
• Related Literature
- TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.
Packaging
JEDEC TO-220AB
E
C
G
Formerly Developmental Type TA49314.
COLLECTOR
(FLANGE)
Ordering Information
PART NUMBER
PACKAGE
TO-220AB
TO-263AB
BRAND
1N120BND
1N120BND
HGTP1N120BND
HGT1S1N120BNDS
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-263AB in tape and reel, i.e. HGT1S1N120BNDS9A.
JEDEC TO-263AB
Symbol
COLLECTOR
(FLANGE)
C
G
E
G
E
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,598,461
4,682,195
4,803,533
4,888,627
4,417,385
4,605,948
4,684,413
4,809,045
4,890,143
4,430,792
4,620,211
4,694,313
4,809,047
4,901,127
4,443,931
4,631,564
4,717,679
4,810,665
4,904,609
4,466,176
4,639,754
4,743,952
4,823,176
4,933,740
4,516,143
4,639,762
4,783,690
4,837,606
4,963,951
4,532,534
4,641,162
4,794,432
4,860,080
4,969,027
4,587,713
4,644,637
4,801,986
4,883,767
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 2000
SABER™ is a trademark of Analogy, Inc.
1
HGTP1N120BND, HGT1S1N120BNDS
o
Absolute Maximum Ratings T = 25 C, Unless Otherwise Specified
C
ALL TYPES
UNITS
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV
1200
V
CES
Collector Current Continuous
o
At T = 25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C
5.3
A
A
A
A
V
V
C25
C110
F(AV)
o
At T = 110 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C
2.7
o
Average Rectified Forward Current at T = 148 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
4
6
C
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
CM
GES
GEM
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
±20
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
o
±30
Switching Safe Operating Area at T = 150 C (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA
J
6A at 1200V
60
o
Power Dissipation Total at T = 25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
C
W
D
o
o
Power Dissipation Derating T > 25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
0.476
-55 to 150
W/ C
C
o
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . T , T
J
C
STG
Maximum Lead Temperature for Soldering
o
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
300
260
8
C
L
o
Package Body for 10s, see Tech Brief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
C
pkg
Short Circuit Withstand Time (Note 2) at V
Short Circuit Withstand Time (Note 2) at V
= 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t
µs
µs
GE
SC
SC
= 13V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t
13
GE
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. Single Pulse; V
GE
= 15V; Pulse width limited by maximum junction temperature.
o
2. V
= 840V, T = 125 C, R = 82Ω.
J G
CE(PK)
o
Electrical Specifications
T = 25 C, Unless Otherwise Specified
C
PARAMETER
SYMBOL
BV
TEST CONDITIONS
= 250µA, V = 0V
MIN
TYP
MAX
-
UNITS
V
Collector to Emitter Breakdown Voltage
Collector to Emitter Leakage Current
I
1200
-
-
CES
C
GE
CES
o
I
V
= BV
T
= 25 C
-
-
250
-
µA
µA
mA
V
CES
CE
C
C
C
C
C
o
T
T
T
T
= 125 C
20
-
o
= 150 C
-
1.0
2.9
4.3
-
o
Collector to Emitter Saturation Voltage
V
I
= 1.0A
= 15V
= 25 C
-
2.5
3.8
7.1
-
CE(SAT)
C
V
o
GE
= 150 C
-
V
Gate to Emitter Threshold Voltage
Gate to Emitter Leakage Current
Switching SOA
V
I
= 50µA, V
= V
GE
6.0
-
V
GE(TH)
C
CE
I
V
= ±20V
±250
-
nA
A
GES
GE
o
SSOA
T = 150 C, R = 82Ω, V
= 15V,
6
-
J
G
GE
= 1200V
L = 2mH, V
CE(PK)
Gate to Emitter Plateau Voltage
On-State Gate Charge
V
I
I
= 1.0A, V = 0.5 BV
CE CES
-
-
-
-
-
-
-
-
-
9.2
14
-
V
nC
nC
ns
ns
ns
ns
J
GEP
C
Q
= 1.0A,
= 0.5 BV
V
= 15V
20
G(ON)
C
GE
V
CE
CES
V
= 20V
o
15
21
GE
Current Turn-On Delay Time
Current Rise Time
t
IGBT and Diode at T = 25 C
15
20
d(ON)I
J
I
= 1.0A
CE
t
11
14
rI
V
V
R
= 0.8 BV
= 15V
CE
CES
Current Turn-Off Delay Time
Current Fall Time
t
67
76
d(OFF)I
GE
= 82Ω
t
G
226
172
90
300
187
123
fI
L = 4mH
Test Circuit (Figure 20)
Turn-On Energy
E
ON
Turn-Off Energy (Note 3)
E
J
OFF
2
HGTP1N120BND, HGT1S1N120BNDS
o
Electrical Specifications
T
= 25 C, Unless Otherwise Specified (Continued)
C
PARAMETER
Current Turn-On Delay Time
Current Rise Time
SYMBOL
TEST CONDITIONS
MIN
TYP
13
11
75
258
385
120
1.3
-
MAX
17
UNITS
ns
ns
ns
ns
J
o
t
IGBT and Diode at T = 150 C
-
-
-
-
-
-
-
-
-
-
d(ON)I
J
I
V
V
R
= 1.0A
CE
t
15
rI
= 0.8 BV
= 15V
CE
CES
Current Turn-Off Delay Time
Current Fall Time
t
88
d(OFF)I
GE
= 82Ω
t
G
370
440
175
1.8
50
fI
L = 4mH
Turn-On Energy
E
ON
Test Circuit (Figure 20)
Turn-Off Energy (Note 3)
Diode Forward Voltage
Diode Reverse Recovery Time
E
J
OFF
V
I
I
= 1.0A
V
EC
EC
t
= 1.0A, dI /dt = 200A/µs
EC
ns
rr
EC
o
Thermal Resistance Junction To Case
R
IGBT
-
2.1
3
C/W
θJC
o
Diode
-
C/W
NOTE:
3. Turn-Off Energy Loss (E
) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and
OFF
ending at the point where the collector current equals zero (I
= 0A). All devices were tested per JEDEC Standard No. 24-1 Method for
CE
Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. Turn-on losses
include losses due to diode recovery.
Typical Performance Curves Unless Otherwise Specified
7
6
o
= 150 C, R = 82Ω, V = 15V, L = 2mH
GE
T
V
= 15V
J
G
GE
6
5
4
3
2
1
0
5
4
3
2
1
0
0
200
400
600
800
1000
1200
1400
25
50
75
100
125
150
o
T
, CASE TEMPERATURE ( C)
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
C
FIGURE 1. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
300
o
20
18
16
14
12
10
20
18
16
14
12
10
T
C
o
V
T
= 150 C, R = 82Ω, L = 4mH, V
= 960V
CE
GE
15V
J
G
V
= 840V, R = 82, T = 125 C
CE
G
J
200
o
75 C
o
75 C 13V
o
110 C 15V
t
100
SC
o
110 C 13V
f
f
= 0.05 / (t
d(OFF)I
= (P - P ) / (E
+ t )
d(ON)I
MAX1
MAX2
+ E
)
I
D
C
ON
OFF
SC
P
= CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
C
10
5
o
R
= 2.1 C/W, SEE NOTES
1.0
ØJC
0.5
2.0
3.0
13
13.5
14
14.5
15
I
, COLLECTOR TO EMITTER CURRENT (A)
CE
V
, GATE TO EMITTER VOLTAGE (V)
GE
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
3
HGTP1N120BND, HGT1S1N120BNDS
Typical Performance Curves Unless Otherwise Specified (Continued)
6
5
4
3
2
1
0
6
5
4
3
2
1
0
o
T
= 25 C
C
o
T
= 25 C
C
o
T
= -55 C
C
o
o
o
T
= 150 C
T
= 150 C
C
T
= -55 C
C
C
PULSE DURATION = 250µs
DUTY CYCLE < 0.5%, V = 15V
PULSE DURATION = 250µs
DUTY CYCLE < 0.5%, V = 13V
GE
GE
0
2
4
6
8
10
0
2
4
6
8
10
V
, COLLECTOR TO EMITTER VOLTAGE (V)
CE
V
, COLLECTOR TO EMITTER VOLTAGE (V)
CE
FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE
1200
250
R
= 82Ω, L = 4mH, V
= 960V
R
T
= 82Ω, L = 4mH, V
= 960V
CE
G
CE
o
G
1000
800
600
400
200
0
200
150
100
50
T
T
= 150 C, V
= 13V
= 15V
J
GE
o
= 150 C, V
= 13V OR 15V
o
J
GE
= 150 C, V
J
GE
o
T
= 25 C, V
= 13V OR 15V
J
GE
o
T
T
= 25 C, V
= 13V
= 15V
J
J
GE
o
= 25 C, V
GE
0
0.5
0.5
1
1.5
2
2.5
3
1
1.5
2
2.5
3
I
, COLLECTOR TO EMITTER CURRENT (A)
I
, COLLECTOR TO EMITTER CURRENT (A)
CE
CE
FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
24
28
R
= 82Ω, L = 4mH, V
= 960V
o
G
CE
R
= 82Ω, L = 4mH, V
= 960V
CE
G
24
20
16
12
8
20
16
12
8
o
T
= 25 C, T = 150 C, V
= 13V
J
J
GE
T
V
GE
J
o
o
25 C 13V
150 C 13V
25 C 15V
150 C 15V
o
= 25 C, T = 150 C, V = 15V
GE
o
T
o
J
J
o
4
0
1
1.5
2
2.5
3
0.5
1
1.5
2
2.5
3
I
, COLLECTOR TO EMITTER CURRENT (A)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
CE
FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT
4
HGTP1N120BND, HGT1S1N120BNDS
Typical Performance Curves Unless Otherwise Specified (Continued)
84
80
76
72
68
64
60
56
360
320
280
240
200
160
120
R
= 82Ω, L = 4mH, V
= 960V
CE
R
= 82Ω, L = 4mH, V
= 960V
CE
G
G
o
T
= 150 C, V = 15V
GE
J
o
o
= 150 C, V
= 25 C,
T
= 150 C, V = 13V OR 15V
GE
T
T
= 13V
GE
J
J
J
o
V
= 15V
GE
o
T
= 25 C, V
= 13V
J
GE
o
T
= 25 C, V
= 13V OR 15V
1.5
J
GE
0.5
1
2
2.5
3
0.5
1
1.5
2
2.5
3
I
, COLLECTOR TO EMITTER CURRENT (A)
CE
I
, COLLECTOR TO EMITTER CURRENT (A)
CE
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 12. TURN-OFF FALL TIME vs COLLECTOR TO
EMITTER CURRENT
18
15
DUTY CYCLE < 0.5%, V
= 20V
CE
V
= 800V
PULSE DURATION = 250µs
16
14
12
10
8
CE
12
9
o
T
= -55 C
V
= 1200V
C
CE
V
= 400V
CE
o
T
= 25 C
6
C
6
o
T
= 150 C
C
4
3
2
o
= 1mA, R = 600Ω, T = 25 C
I
G(REF)
L
C
0
0
7
8
9
10
11
12
13
14
15
0
4
8
12
16
20
V
, GATE TO EMITTER VOLTAGE (V)
Q , GATE CHARGE (nC)
G
GE
FIGURE 13. TRANSFER CHARACTERISTIC
FIGURE 14. GATE CHARGE WAVEFORMS
6
350
300
250
200
150
100
50
PULSE DURATION = 250µs
DUTY CYCLE < 0.5%, T = 110 C
FREQUENCY = 1MHz
o
C
5
4
3
2
1
0
C
IES
V
= 15V
V
= 12V
GE
GE
V
= 10V
GE
C
OES
C
RES
V
0
0
2
4
6
8
10
0
5
10
15
20
25
, COLLECTOR TO EMITTER VOLTAGE (V)
V
, COLLECTOR TO EMITTER VOLTAGE (V)
CE
CE
FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER
VOLTAGE
FIGURE 16. COLLECTOR TO EMITTER ON-STATE VOLTAGE
5
HGTP1N120BND, HGT1S1N120BNDS
Typical Performance Curves Unless Otherwise Specified (Continued)
2.0
1.0
0.5
0.2
0.1
0.1
0.05
t
1
0.02
0.01
P
D
t
2
SINGLE PULSE
DUTY FACTOR, D = t / t
1
2
0.01
PEAK T = (P X Z
θJC
X R
θJC
) + T
C
J
D
0.005
-5
-4
10
-3
-2
-1
0
10
10
10
10
10
t , RECTANGULAR PULSE DURATION (s)
1
FIGURE 17. NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE
5
70
o
= 25 C, dI /dt = 200A/µs
T
C
EC
60
50
40
30
20
10
0
2
1
o
o
T
= 150 C
T
T
= -55 C
C
C
C
t
rr
0.5
t
a
o
= 25 C
t
0.2
0.1
b
0
0.4
0.8
1.2
1.6
2.0
0.5
1
2
3
4
5
I
, FORWARD CURRENT (A)
V
, FORWARD VOLTAGE (V)
EC
EC
FIGURE 18. DIODE FORWARD CURRENT vs FORWARD
VOLTAGE DROP
FIGURE 19. RECOVERY TIMES vs FORWARD CURRENT
Test Circuit and Waveforms
V
GE
90%
L = 4mH
10%
RHRD4120
E
ON
E
OFF
R
= 82Ω
G
I
I
CE
CE
90%
+
V
= 960V
DD
V
10%
CE
-
t
d(ON)I
t
fI
t
rI
t
d(OFF)I
FIGURE 20. INDUCTIVE SWITCHING TEST CIRCUIT
FIGURE 21. SWITCHING TEST WAVEFORMS
6
HGTP1N120BND, HGT1S1N120BNDS
Handling Precautions for IGBTs
Operating Frequency Information
Insulated Gate Bipolar Transistors are susceptible to
gate-insulation damage by the electrostatic discharge of
energy through the devices. When handling these devices,
care should be exercised to assure that the static charge
built in the handler’s body capacitance is not discharged
through the device. With proper handling and application
procedures, however, IGBTs are currently being extensively
used in production by numerous equipment manufacturers in
military, industrial and consumer applications, with virtually
no damage problems due to electrostatic discharge. IGBTs
can be handled safely if the following basic precautions are
taken:
Operating frequency information for a typical device
(Figure 3) is presented as a guide for estimating device
performance for a specific application. Other typical
frequency vs collector current (I ) plots are possible using
CE
the information shown for a typical unit in Figures 6, 7, 8, 9
and 11. The operating frequency plot (Figure 3) of a typical
device shows f
or f
; whichever is smaller at each
MAX1
MAX2
point. The information is based on measurements of a
typical device and is bounded by the maximum rated
junction temperature.
f
is defined by f
MAX1
= 0.05/(t ).
+ t
MAX1
d(OFF)I d(ON)I
Deadtime (the denominator) has been arbitrarily held to 10%
of the on-state time for a 50% duty factor. Other definitions
1. Prior to assembly into a circuit, all leads should be kept
shorted together either by the use of metal shorting
springs or by the insertion into conductive material such
as “ECCOSORBD™ LD26” or equivalent.
are possible. t
and t
are defined in Figure 21.
d(OFF)I
d(ON)I
Device turn-off delay can establish an additional frequency
limiting condition for an application other than T . t
JM d(OFF)I
2. When devices are removed by hand from their carriers,
the hand being used should be grounded by any suitable
means - for example, with a metallic wristband.
is important when controlling output ripple under a lightly
loaded condition.
f
is defined by f
MAX2
= (P - P )/(E
OFF
+ E ). The
ON
MAX2
D
C
3. Tips of soldering irons should be grounded.
allowable dissipation (P ) is defined by P = (T - T )/R
.
D
D
JM θJC
C
4. Devices should never be inserted into or removed from
circuits with power on.
The sum of device switching and conduction losses must
not exceed P . A 50% duty factor was used (Figure 3) and
D
5. Gate Voltage Rating - Never exceed the gate-voltage
the conduction losses (P ) are approximated by
C
rating of V
. Exceeding the rated V can result in
GEM
GE
P
= (V
x I )/2.
CE
C
CE
permanent damage to the oxide layer in the gate region.
E
and E
are defined in the switching waveforms
OFF
6. Gate Termination - The gates of these devices are
essentially capacitors. Circuits that leave the gate
open-circuited or floating should be avoided. These
conditions can result in turn-on of the device due to
voltage buildup on the input capacitor due to leakage
currents or pickup.
ON
shown in Figure 21. E
power loss (I
is the integral of the instantaneous
ON
x V ) during turn-on and E
is the
CE
CE
OFF
x V ) during
integral of the instantaneous power loss (I
CE
turn-off. All tail losses are included in the calculation for
; i.e., the collector current equals zero (I = 0).
CE
E
OFF
CE
7. Gate Protection - These devices do not have an internal
monolithic Zener diode from gate to emitter. If gate
protection is required an external Zener is recommended.
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7
相关型号：
HGTP20N60A4_NL
Insulated Gate Bipolar Transistor, 70A I(C), 600V V(BR)CES, N-Channel, TO-220AB ALTERNATE VERSION, 3 PIN
FAIRCHILD
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