IRFS59N10DPBF [IRF]

HEXFET Power MOSFET; HEXFET功率MOSFET
IRFS59N10DPBF
型号: IRFS59N10DPBF
厂家: INTERNATIONAL RECTIFIER    INTERNATIONAL RECTIFIER
描述:

HEXFET Power MOSFET
HEXFET功率MOSFET

文件: 总11页 (文件大小:224K)
下载:  下载PDF数据表文档文件

IRFS59N10DTRLP

Power Field-Effect Transistor, 59A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3

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0 IRF

IRFS59N10DTRR

Power Field-Effect Transistor, 59A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3

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0 IRF

IRFS59N10DTRRP

暂无描述

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0 IRF

IRFS610A

Advenced Power MOSFET (N-CHANNEL)

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26 FAIRCHILD

IRFS610B

200V N-Channel MOSFET

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26 FAIRCHILD

IRFS614A

TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 2.1A I(D) | TO-220AB

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18 ETC

IRFS614B

250V N-Channel MOSFET

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18 FAIRCHILD

IRFS614B_FP001

Power Field-Effect Transistor, 2.8A I(D), 250V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, TO-220F, 3 PIN

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0 FAIRCHILD

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0 FAIRCHILD

IRFS620

TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 4A I(D) | SOT-186

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17 ETC

IRFS620

Power Field-Effect Transistor, 4.1A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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0 SAMSUNG

IRFS620A

TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 4.1A I(D) | TO-220AB

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12 ETC

IRFS620B

200V N-Channel MOSFET

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16 FAIRCHILD

IRFS621

TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 4A I(D) | SOT-186

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17 ETC

IRFS621

Power Field-Effect Transistor, 4.1A I(D), 150V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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0 SAMSUNG