IRGP4063PBF_15 [INFINEON]
INSULATED GATE BIPOLAR TRANSISTOR;
| 型号： | IRGP4063PBF_15 |
| 厂家： | 
Infineon |
| 描述： | INSULATED GATE BIPOLAR TRANSISTOR |
| 文件： | 总10页 (文件大小：264K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 97404
IRGP4063PbF
INSULATED GATE BIPOLAR TRANSISTOR
IRGP4063-EPbF
Features
C
• Low VCE (ON) Trench IGBT Technology
VCES = 600V
• Low switching losses
• Maximum Junction temperature 175 °C
• 5 μS short circuit SOA
• SquareRBSOA
IC = 48A, TC = 100°C
G
tSC ≥ 5μs, TJ(max) = 175°C
• 100% of the parts tested for ILM
• Positive VCE (ON) Temperature co-efficient
• Tightparameterdistribution
• LeadFreePackage
E
VCE(on) typ. = 1.65V
n-channel
Benefits
C
C
• High Efficiency in a wide range of applications
• Suitable for a wide range of switching frequencies due to
Low VCE (ON) and Low Switching losses
• RuggedtransientPerformanceforincreasedreliability
• ExcellentCurrentsharinginparalleloperation
• Low EMI
E
E
C
C
G
G
TO-247AC
IRGP4063PbF
TO-247AD
IRGP4063-EPbF
G
C
E
Gate
Collector
Emitter
Absolute Maximum Ratings
Parameter
Max.
Units
VCES
Collector-to-Emitter Voltage
600
96
V
IC @ TC = 25°C
Continuous Collector Current
IC @ TC = 100°C
Continuous Collector Current
48
ICM
ILM
Pulse Collector Current, VGE = 15V
Clamped Inductive Load Current, VGE = 20V
144
192
A
A
V
VGE
Continuous Gate-to-Emitter Voltage
Transient Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
±20
±30
PD @ TC = 25°C
330
W
PD @ TC = 100°C
170
TJ
-55 to +175
TSTG
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
°C
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Thermal Resistance
Parameter
Min.
–––
–––
–––
Typ.
–––
Max.
0.45
–––
40
Units
°C/W
RθJC (IGBT)
RθCS
Thermal Resistance Junction-to-Case-(each IGBT)
Thermal Resistance, Case-to-Sink (flat, greased surface)
0.24
–––
RθJA
Thermal Resistance, Junction-to-Ambient (typical socket mount)
1
www.irf.com
06/30/09
IRGP4063PbF/IRGP4063-EPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Ref.Fig
CT6
Parameter
Collector-to-Emitter Breakdown Voltage
Min. Typ. Max. Units
Conditions
GE = 0V, IC = 150μA
V(BR)CES
V
600
—
—
—
—
4.0
—
—
—
—
—
—
0.30
1.65
2.0
2.05
—
—
V
ΔV(BR)CES/ΔTJ
VGE = 0V, IC = 1mA (25°C-175°C)
IC = 48A, VGE = 15V, TJ = 25°C
IC = 48A, VGE = 15V, TJ = 150°C
IC = 48A, VGE = 15V, TJ = 175°C
VCE = VGE, IC = 1.4mA
CT6
Temperature Coeff. of Breakdown Voltage
—
V/°C
5,6,7
8,9,10
2.14
—
VCE(on)
VGE(th)
Collector-to-Emitter Saturation Voltage
V
—
Gate Threshold Voltage
6.5
—
V
mV/°C
S
8,9
Δ
Δ
VGE(th)/ TJ
V
CE = VGE, IC = 1.0mA (25°C - 175°C)
VCE = 50V, IC = 48A, PW = 80μs
GE = 0V, VCE = 600V
VGE = 0V, VCE = 600V, TJ = 175°C
GE = ±20V
10,11
Threshold Voltage temp. coefficient
Forward Transconductance
-21
32
gfe
—
ICES
V
Collector-to-Emitter Leakage Current
1.0
450
—
150
1000
±100
μA
IGES
V
Gate-to-Emitter Leakage Current
nA
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Ref.Fig
18
Parameter
Total Gate Charge (turn-on)
Gate-to-Emitter Charge (turn-on)
Gate-to-Collector Charge (turn-on)
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Min. Typ. Max. Units
Conditions
Qg
IC = 48A
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
95
140
Qge
Qgc
Eon
Eoff
Etotal
td(on)
tr
VGE = 15V
CT1
28
42
nC
μJ
ns
VCC = 400V
35
53
IC = 48A, VCC = 400V, VGE = 15V
CT4
CT4
625
1141
RG=10Ω, L= 200μH, LS=150nH, TJ= 25°C
Energy losses include tail & diode reverse recovery
IC = 48A, VCC = 400V, VGE = 15V
1275 1481
1900 2622
60
40
78
56
176
46
—
—
—
—
—
—
—
—
—
—
Ω
RG = 10 , L = 200μH, LS = 150nH, TJ = 25°C
td(off)
tf
Turn-Off delay time
Fall time
145
35
Eon
Eoff
Etotal
td(on)
tr
IC = 48A, VCC = 400V, VGE=15V
12, 14
CT4
1625
1585
3210
55
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Ω
RG=10 , L=200μH, LS=150nH, TJ = 175°C
μJ
ns
pF
Energy losses include tail & diode reverse recovery
IC = 48A, VCC = 400V, VGE = 15V
WF1, WF2
13, 15
CT4
R
G = 10Ω, L = 200μH, LS = 150nH
45
td(off)
tf
TJ = 175°C
WF1
Turn-Off delay time
Fall time
165
45
WF2
Cies
Coes
Cres
VGE = 0V
17
Input Capacitance
3025
245
90
VCC = 30V
Output Capacitance
Reverse Transfer Capacitance
f = 1.0Mhz
TJ = 175°C, IC = 192A
VCC = 480V, Vp =600V
Rg = 10Ω, VGE = +15V to 0V
VCC = 400V, Vp =600V
Rg = 10Ω, VGE = +15V to 0V
4
RBSOA
SCSOA
Reverse Bias Safe Operating Area
Short Circuit Safe Operating Area
FULL SQUARE
CT2
16, CT3
WF3
5
—
—
μs
Notes:
VCC = 80% (VCES), VGE = 20V, L = 200μH, RG = 10Ω.
This is only applied to TO-247AC package.
Pulse width limited by max. junction temperature.
Refer to AN-1086 for guidelines for measuring V(BR)CES safely.
ꢀ Turn-on energy is measured using the same co-pak diode as IRGP4063DPbF.
Calculated continuous current based on maximum allowable junction temperature.
Bond wire current limit is 80A. Note that current limitations arising from heating of
the device leads may occur with some lead mounting arrangements.
2
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IRGP4063PbF/IRGP4063-EPbF
100
90
80
70
60
50
40
30
20
10
0
350
300
250
200
150
100
50
0
0
25 50 75 100 125 150 175 200
(°C)
0
25 50 75 100 125 150 175 200
(°C)
T
T
C
C
Fig. 1 - Maximum DC Collector Current vs.
Fig. 2 - Power Dissipation vs. Case
Case Temperature
Temperature
1000
1000
10μsec
100
100
10
1
100μsec
1msec
10
DC
1
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
1
10
100
1000
10
100
(V)
1000
V
(V)
V
CE
CE
Fig. 3 - Forward SOA
TC = 25°C, TJ ≤ 175°C; VGE =15V
Fig. 4 - Reverse Bias SOA
TJ = 175°C; VGE =15V
200
180
160
140
120
100
80
200
180
160
140
120
100
80
V
= 18V
GE
V
= 18V
GE
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
60
60
40
40
20
20
0
0
0
2
4
6
8
10
0
2
4
6
8
10
V
(V)
V
(V)
CE
CE
Fig. 5 - Typ. IGBT Output Characteristics
TJ = -40°C; tp = 80μs
Fig. 6 - Typ. IGBT Output Characteristics
TJ = 25°C; tp = 80μs
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3
IRGP4063PbF/IRGP4063-EPbF
200
20
18
16
14
12
10
8
V
= 18V
180
160
140
120
100
80
GE
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
I
I
I
= 24A
= 48A
= 96A
CE
CE
CE
60
6
40
4
20
2
0
0
0
2
4
6
8
10
5
10
15
20
V
(V)
GE
V
(V)
CE
Fig. 8 - Typical VCE vs. VGE
Fig. 7 - Typ. IGBT Output Characteristics
TJ = 175°C; tp = 80μs
TJ = -40°C
20
18
16
14
12
10
8
20
18
16
14
12
I
I
I
= 24A
I
I
I
= 24A
= 48A
= 96A
CE
CE
CE
CE
CE
CE
= 48A
= 96A
10
8
6
6
4
4
2
2
0
0
5
10
15
20
5
10
15
20
V
(V)
V
(V)
GE
GE
Fig. 9 - Typical VCE vs. VGE
Fig. 10 - Typical VCE vs. VGE
TJ = 25°C
TJ = 175°C
6000
5000
4000
3000
2000
1000
0
200
180
160
140
120
100
80
T
= 25°C
J
T
= 175°C
J
E
OFF
E
ON
60
40
20
0
0
50
100
150
0
5
10
15
V
(V)
GE
I
(A)
C
Fig. 11 - Typ. Transfer Characteristics
VCE = 50V; tp = 10μs
Fig. 12 - Typ. Energy Loss vs. IC
TJ = 175°C; L = 200μH; VCE = 400V, RG = 10Ω; VGE = 15V
4
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IRGP4063PbF/IRGP4063-EPbF
5000
1000
100
10
4500
E
OFF
4000
E
ON
td
3500
3000
2500
2000
1500
1000
OFF
td
ON
t
F
t
R
0
25
50
75
100
125
0
20
40
60
80
100
I
(A)
C
Rg (Ω)
Fig. 14 - Typ. Energy Loss vs. RG
TJ = 175°C; L = 200μH; VCE = 400V, ICE = 48A; VGE = 15V
Fig. 13 - Typ. Switching Time vs. IC
TJ = 175°C; L = 200μH; VCE = 400V, RG = 10Ω; VGE = 15V
400
350
300
250
200
150
100
50
18
16
14
12
10
8
1000
td
OFF
t
R
td
ON
100
t
F
6
4
10
8
10
12
14
(V)
16
18
0
25
50
75
100
125
V
Ω
( )
R
GE
G
Fig. 15 - Typ. Switching Time vs. RG
TJ = 175°C; L = 200μH; VCE = 400V, ICE = 48A; VGE = 15V
Fig. 16 - VGE vs. Short Circuit Time
VCC = 400V; TC = 25°C
10000
16
14
12
10
8
V
V
= 300V
= 400V
Cies
CES
CES
1000
Coes
6
100
4
Cres
2
10
0
0
20
40
60
(V)
80
100
0
25
50
75
100
V
Q
, Total Gate Charge (nC)
CE
G
Fig. 17 - Typ. Capacitance vs. VCE
Fig. 18 - Typical Gate Charge vs. VGE
ICE = 48A; L = 600μH
VGE= 0V; f = 1MHz
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5
IRGP4063PbF/IRGP4063-EPbF
1
D = 0.50
0.1
0.01
0.20
0.10
0.05
R1
R1
R2
R2
R3
R3
0.02
0.01
Ri (°C/W) τi (sec)
0.0872 0.000114
τ
J τJ
τ
τ
Cτ
τ
1τ1
τ
2 τ2
3τ3
0.1599 0.001520
0.2020 0.020330
SINGLE PULSE
( THERMAL RESPONSE )
Ci= τi/Ri
0.001
0.0001
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t
, Rectangular Pulse Duration (sec)
1
Fig 19. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
6
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IRGP4063PbF/IRGP4063-EPbF
L
L
80 V
+
-
DUT
VCC
0
DUT
VCC
1K
Rg
Fig.C.T.1 - Gate Charge Circuit (turn-off)
Fig.C.T.2 - RBSOA Circuit
diode clamp /
DUT
L
4X
-5V
Rg
DC
DUT
VCC
DUT /
DRIVER
VCC
SCSOA
Fig.C.T.3 - S.C. SOA Circuit
Fig.C.T.4 - Switching Loss Circuit
C force
R = VCC
ICM
100K
D1 22K
C sense
VCC
DUT
DUT
G force
Rg
0.0075μF
E sense
E force
Fig.C.T.6 - BVCES Filter Circuit
Fig.C.T.5 - Resistive Load Circuit
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7
IRGP4063PbF/IRGP4063-EPbF
600
500
400
300
200
100
0
120
100
80
60
40
20
0
700
600
500
400
300
200
100
0
140
120
100
80
tr
TEST
tf
90% test
60
90% ICE
5% VCE
40
10% test
5% VCE
20
5% ICE
EOFF Loss
0.60
0
EON
-100
-20
-100
-20
-0.40
0.10
1.10
6.20
6.40
6.60
6.80
7.00
Time(µs)
Time (µs)
Fig. WF1 - Typ. Turn-off Loss Waveform
Fig. WF2 - Typ. Turn-on Loss Waveform
@ TJ = 175°C using Fig. CT.4
@ TJ = 175°C using Fig. CT.4
600
500
600
500
400
300
200
100
0
ICE
VCE
400
300
200
100
0
-100
-100
-5.00
0.00
5.00
10.00
time (µS)
Fig. WF3 - Typ. S.C. Waveform
@ TJ = 25°C using Fig. CT.3
8
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IRGP4063PbF/IRGP4063-EPbF
TO-247AC Package Outline
Dimensions are shown in millimeters (inches)
TO-247AC Part Marking Information
TO-247AC package is not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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9
IRGP4063PbF/IRGP4063-EPbF
TO-247AD Package Outline
Dimensions are shown in millimeters (inches)
TO-247AD Part Marking Information
TO-247AD package is not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 06/09
10
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