BUP23BF [ISC]

isc Silicon NPN Power Transistors; ISC的硅NPN功率晶体管
BUP23BF
型号: BUP23BF
厂家: INCHANGE SEMICONDUCTOR COMPANY LIMITED    INCHANGE SEMICONDUCTOR COMPANY LIMITED
描述:

isc Silicon NPN Power Transistors
ISC的硅NPN功率晶体管

晶体 晶体管
文件: 总2页 (文件大小:109K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
INCHANGE Semiconductor  
isc Product Specification  
isc Silicon NPN Power Transistors  
BUP23BF/CF  
DESCRIPTION  
·Collector-Emitter Sustaining Voltage-  
: VCEO(SUS)= 400V (Min)-BUP23BF  
450V (Min)-BUP23CF  
·High Switching Speed  
APPLICATIONS  
·Designed for use in converters, inverters, switching  
regulators, motor control systems etc.  
ABSOLUTE MAXIMUM RATINGS(Ta=25)  
SYMBOL  
PARAMETER  
VALUE  
750  
850  
400  
450  
9
UNIT  
BUP23BF  
BUP23CF  
BUP23BF  
BUP23CF  
Collector- Emitter  
Voltage(VBE= 0)  
VCES  
V
Collector-Emitter  
Voltage  
VCEO  
V
VEBO  
IC  
ICM  
IB  
Emitter-Base Voltage  
V
A
Collector Current- Continuous  
Collector Current-Peak  
Base Current- Continuous  
Base Current-Peak  
15  
30  
A
6
A
IBM  
PC  
TJ  
9
A
Collector Power Dissipation  
@ TC=25℃  
37  
W
Junction Temperature  
150  
-65~150  
Storage Temperature Range  
Tstg  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
MAX  
3.4  
UNIT  
/W  
/W  
Thermal Resistance,Junction to Case  
Thermal Resistance,Junction to Ambient  
Rth j-c  
35  
Rth j-a  
isc Websitewww.iscsemi.cn  
INCHANGE Semiconductor  
isc Product Specification  
isc Silicon NPN Power Transistors  
BUP23BF/CF  
ELECTRICAL CHARACTERISTICS  
TC=25unless otherwise specified  
SYMBOL  
PARAMETER  
CONDITIONS  
MIN  
400  
450  
TYP. MAX UNIT  
BUP23BF  
BUP23CF  
Collector-Emitter  
Sustaining Voltage  
VCEO(SUS)  
IC= 100mA ; IB= 0;L= 25mH  
V
BUP23BF IC= 10A; IB= 1.33A  
BUP23CF IC= 10A; IB= 1.67A  
BUP23BF IC= 10A; IB= 1.33A  
1.5  
Collector-Emitter  
Saturation Voltage  
V
VCE  
(sat)  
1.5  
1.5  
Base-Emitter  
Saturation Voltage  
V
VBE  
(sat)  
BUP23CF IC= 10A; IB= 1.67A  
VCE= VCESmax; VBE= 0  
1.5  
1
ICES  
Collector Cutoff Current  
Emitter Cutoff Current  
DC Current Gain  
mA  
3
VCE= VCESmax; VBE= 0;TJ= 125℃  
IEBO  
VEB= 9V ; IC= 0  
10  
mA  
hFE  
IC= 1.5A ; VCE= 5V  
25  
Switching Times, Resistive Load  
Turn-On Time  
Storage Time  
Fall Time  
1.0  
4.5  
0.7  
μs  
μs  
μs  
ton  
tstg  
tf  
For BUP23BF  
IC= 10A ;IB1= -IB2= 1.33A  
For BUP23CF  
IC= 10A ;IB1= -IB2= 1.67A  
2
isc Websitewww.iscsemi.cn  

相关型号:

BUP30

TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 20A I(C) | TO-220AB
ETC

BUP300

IGBT (Low forward voltage drop High switching speed Low tail current Latch-up free Avalanche rated)
INFINEON

BUP302

IGBT (Low forward voltage drop High switching speed Low tail current Latch-up free Avalanche rated)
INFINEON

BUP303

IGBT (Low forward voltage drop High switching speed Low tail current Latch-up free Avalanche rated)
INFINEON

BUP304

IGBT (Low forward voltage drop High switching speed Low tail current Latch-up free Avalanche rated)
INFINEON

BUP305

IGBT With Antiparallel Diode (Low forward voltage drop High switching speed Low tail current Latch-up free Including fast free-wheel diode)
INFINEON

BUP305D

IGBT With Antiparallel Diode (Low forward voltage drop High switching speed Low tail current Latch-up free Including fast free-wheel diode)
INFINEON

BUP306D

IGBT With Antiparallel Diode (Low forward voltage drop High switching speed Low tail current Latch-up free Including fast free-wheel diode)
INFINEON

BUP307

IGBT (Low forward voltage drop High switching speed Low tail current Latch-up free Avalanche rated)
INFINEON

BUP307D

IGBT With Antiparallel Diode (Low forward voltage drop High switching speed Low tail current Latch-up free Including fast free-wheel diode)
INFINEON

BUP309

IGBT (High switching speed Low tail current Latch-up free Avalanche rated)
INFINEON

BUP31

TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 20A I(C) | TO-220AB
ETC